CN1327261A - 改进工艺窗口制作全自对准薄膜场效应晶体管的方法 - Google Patents
改进工艺窗口制作全自对准薄膜场效应晶体管的方法 Download PDFInfo
- Publication number
- CN1327261A CN1327261A CN01119377A CN01119377A CN1327261A CN 1327261 A CN1327261 A CN 1327261A CN 01119377 A CN01119377 A CN 01119377A CN 01119377 A CN01119377 A CN 01119377A CN 1327261 A CN1327261 A CN 1327261A
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- Prior art keywords
- photoresist
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- insulating barrier
- described method
- conductive layer
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- Granted
Links
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- 238000000034 method Methods 0.000 claims abstract description 67
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- 239000010409 thin film Substances 0.000 claims description 27
- 230000007797 corrosion Effects 0.000 claims description 26
- 238000005260 corrosion Methods 0.000 claims description 26
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- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 7
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- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
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- 229910052802 copper Inorganic materials 0.000 claims description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
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- 239000010937 tungsten Substances 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
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- 230000008901 benefit Effects 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- 239000011261 inert gas Substances 0.000 description 1
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- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (29)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/586,400 US6403407B1 (en) | 2000-06-02 | 2000-06-02 | Method of forming fully self-aligned TFT with improved process window |
US09/586,400 | 2000-06-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1327261A true CN1327261A (zh) | 2001-12-19 |
CN1226778C CN1226778C (zh) | 2005-11-09 |
Family
ID=24345559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011193778A Expired - Lifetime CN1226778C (zh) | 2000-06-02 | 2001-06-01 | 改进工艺窗口制作全自对准薄膜场效应晶体管的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6403407B1 (zh) |
KR (1) | KR100420547B1 (zh) |
CN (1) | CN1226778C (zh) |
TW (1) | TW494500B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005093811A1 (fr) * | 2004-03-29 | 2005-10-06 | Quanta Display Inc. | Procede de fabrication d'un transistor en couches minces autoaligne |
CN102565941A (zh) * | 2010-12-22 | 2012-07-11 | 日东电工株式会社 | 光波导路的制造方法 |
CN105097947A (zh) * | 2013-04-30 | 2015-11-25 | 乐金显示有限公司 | 薄膜晶体管阵列基板及其制造方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3980156B2 (ja) * | 1998-02-26 | 2007-09-26 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置 |
KR100379505B1 (ko) * | 2000-07-19 | 2003-04-10 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
US6511869B2 (en) * | 2000-12-05 | 2003-01-28 | International Business Machines Corporation | Thin film transistors with self-aligned transparent pixel electrode |
US6486010B1 (en) * | 2002-03-14 | 2002-11-26 | Chi Mei Optoelectronics Corp. | Method for manufacturing thin film transistor panel |
KR100450935B1 (ko) * | 2002-07-03 | 2004-10-02 | 삼성전자주식회사 | 테이퍼형 광도파로 제조방법 |
KR100472853B1 (ko) * | 2002-07-10 | 2005-03-10 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자의 제조방법 |
CN1324665C (zh) * | 2004-03-29 | 2007-07-04 | 广辉电子股份有限公司 | 自对准式薄膜晶体管的制造方法 |
KR100708720B1 (ko) * | 2005-10-19 | 2007-04-17 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치 |
KR101176541B1 (ko) * | 2006-01-13 | 2012-08-24 | 삼성전자주식회사 | 절연층 패터닝 방법, 상기 방법에 의해서 제조된 절연층 및이를 포함하는 표시 소자 |
JP5036219B2 (ja) * | 2006-05-30 | 2012-09-26 | 株式会社日立製作所 | 有機薄膜トランジスタを有する半導体装置の製造方法 |
US20100283059A1 (en) * | 2008-04-08 | 2010-11-11 | Makoto Nakazawa | Semiconductor device and method for manufacturing same |
KR101016441B1 (ko) * | 2008-12-08 | 2011-02-21 | 한국전자통신연구원 | 자기정렬에 의한 유기박막 트랜지스터 제조 방법 |
KR102556021B1 (ko) * | 2017-10-13 | 2023-07-17 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
CN113161291B (zh) * | 2021-04-08 | 2022-11-15 | 北海惠科光电技术有限公司 | 阵列基板制作方法及阵列基板 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4076559A (en) * | 1977-03-18 | 1978-02-28 | General Electric Company | Temperature gradient zone melting through an oxide layer |
DE3689843T2 (de) * | 1986-03-06 | 1994-09-01 | Toshiba Kawasaki Kk | Steuerschaltung einer Flüssigkristallanzeige. |
US5010027A (en) | 1990-03-21 | 1991-04-23 | General Electric Company | Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure |
DE4192351T (zh) | 1990-10-05 | 1992-10-08 | ||
US5156986A (en) | 1990-10-05 | 1992-10-20 | General Electric Company | Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration |
US5391507A (en) * | 1993-09-03 | 1995-02-21 | General Electric Company | Lift-off fabrication method for self-aligned thin film transistors |
JPH09148266A (ja) * | 1995-11-24 | 1997-06-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP3323889B2 (ja) * | 1996-10-28 | 2002-09-09 | 三菱電機株式会社 | 薄膜トランジスタの製造方法 |
JP3717634B2 (ja) * | 1997-06-17 | 2005-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2000
- 2000-06-02 US US09/586,400 patent/US6403407B1/en not_active Expired - Lifetime
-
2001
- 2001-05-30 KR KR10-2001-0030187A patent/KR100420547B1/ko active IP Right Grant
- 2001-05-30 TW TW090113046A patent/TW494500B/zh not_active IP Right Cessation
- 2001-06-01 CN CNB011193778A patent/CN1226778C/zh not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005093811A1 (fr) * | 2004-03-29 | 2005-10-06 | Quanta Display Inc. | Procede de fabrication d'un transistor en couches minces autoaligne |
CN102565941A (zh) * | 2010-12-22 | 2012-07-11 | 日东电工株式会社 | 光波导路的制造方法 |
US9110237B2 (en) | 2010-12-22 | 2015-08-18 | Nitto Denko Corporation | Method of manufacturing optical waveguide |
CN105097947A (zh) * | 2013-04-30 | 2015-11-25 | 乐金显示有限公司 | 薄膜晶体管阵列基板及其制造方法 |
CN104134671B (zh) * | 2013-04-30 | 2018-05-04 | 乐金显示有限公司 | 薄膜晶体管阵列基板及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20010110139A (ko) | 2001-12-12 |
CN1226778C (zh) | 2005-11-09 |
TW494500B (en) | 2002-07-11 |
US6403407B1 (en) | 2002-06-11 |
KR100420547B1 (ko) | 2004-03-02 |
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