CN1324351C

CN1324351C - Particle clearing device

Info

Publication number: CN1324351C
Application number: CNB2004100594260A
Authority: CN
Inventors: 金岩
Original assignee: AU Optronics Corp
Current assignee: AU Optronics Corp
Priority date: 2004-06-18
Filing date: 2004-06-18
Publication date: 2007-07-04
Anticipated expiration: 2024-06-18
Also published as: CN1595237A

Abstract

The present invention discloses a particle cleaning device. The particle cleaning device is combined with a process reaction chamber to be arranged, and can clean an object in advance before the object enters the process reaction chamber. A gate is arranged in the position of an inlet of the process reaction chamber. The particle cleaning device is arranged in front of the gate. The particle cleaning device comprises an ion gas flow blow-out device and a dust suction device, wherein the ion gas flow blow-out device is provided with an ion generator and a spray nozzle. Gas around the ion generator can be ionized by the ion generator, and ionized gas is blown out by the spray nozzle. The ionized gas which is blown out by the ion gas flow blow-out device can neutralize static charges at the surface of the object and can raise particles at the surface of the object in the process that the object enters the process reaction chamber. The particles are sucked by the dust suction device, and finally, the object enters the process reaction chamber through the gate.

Description

Particulate is removed equipment

Technical field

The present invention relates to a kind of particulate and remove equipment, be meant especially a kind ofly to combine the particulate removing equipment that utilizes ionized gas that one object is cleaned with process reaction room.

Background technology

In every complex process of liquid crystal flat panel display, the cleanliness that keep glass substrate are important topics always, and particulate (Particle) is one of main pollution source, and its quality to product has far-reaching influence.

For example when forming array circuit, palpus is the image etch process (PEP:PhotoEngraving Process) of repetitive cycling constantly, be included in the silicon film surface coating photoresist of glass substrate, the light shield that utilization has a circuit pattern carries out exposure-processed to the photoresist layer of glass substrate, and the development treatment after the photoresist photosensitive hardening, after utilizing developer solution that the unwanted part of photoresist is removed, utilize etching technique to make required steps such as Wiring pattern more at last.

If wherein before carrying out etch processes; desire the region surface that etching removes and be attached with particulate, then particulate can form hard curtain cover (Hard mask), makes the particulate lower zone be subjected to etching and causes residual; and then influence successive process, make product the electrically situation of failure (Defect) occur.

The source of particulate comes from environmental factor mostly, as personnel, chip that the board operation produced or in air floating dust etc.Analyze the origin cause of formation that particulate is attached to glass baseplate surface, comprising following several:

1. the particulate in the environment is deposited on glass baseplate surface because of the weight of itself;

2. between the silicon thin film molecule of the molecule of fine particles and glass baseplate surface, existing van der Waals' force (as Fan Dewali);

Glass baseplate surface with have the particulate of electric charge, the electrostatic attraction of Chan Shenging each other;

Therefore, in practice, can limit usually after the development treatment and must in a specified time, carry out etch processes, be exposed to time in the surrounding environment, reduce the chance that attaches particulate to reduce glass substrate.

Before etching, utilize various method of cleaning that particulate is removed, can be divided into the wet-cleaning that utilizes ultrasonic to wash with pure water or detergent remover, and utilize the ejection pure air to blow the dry cleaning of substrate surface particulate off.But because wet-cleaning produces aqueous vapor at glass baseplate surface easily, cause etching area to be removed fully and form residual phenomena, thus present stage the cleaning before for etch processes take the dry cleaning operation more.

See also Fig. 1, it is known etched operating type configuration schematic diagram, and the glass substrate 10 that scribbles photoresist with 1 pair one of etching machines carries out etching, and etched machines 1 has a transfer chamber 11, and a mechanical arm 12 is set in the transfer chamber 11; Temporary room 13, clean room 15 and a plurality of etching reaction chamber 14 are that center ring is around configuration with transfer chamber 11 all.Wherein mechanical arm 12 is in order to transmit glass substrate 10 between temporary room 13, clean room 15 and a plurality of etching reaction chamber 14.

Temporary room 13 is the port, gateway of etching machine 1, glass substrate 10 is sent into earlier in the temporary room 13, by mechanical arm 12 glass substrate 10 is taken out from temporary room 13 again, send to and carry out the dedusting operation in the clean room 15, and after finishing the dedusting operation, mechanical arm 12 again with glass substrate 10 by taking out in the clean room 15, send in the etching reaction chamber 14 and react.

Wherein, clean room 15 is provided with a dry cleaning machine (not shown); but along with the size of glass substrate strengthens gradually; make the volume of dry cleaning machine also strengthen thereupon; therefore clean room can take 1 one chambers of etching machine usually, and after glass substrate moved into clean room 15, its inner dry cleaning machine utilized air doctor blade (air knife) that glass substrate is closely blown out high pressure draught; particulate is struck off from glass baseplate surface, carry out cleaning surfaces.

Can find that by above-mentioned explanation this known cleaning mode has following shortcoming:

1. sending into before etching reaction chamber carries out the etching operation, need send into clean room earlier and clean, the transmission time between the chamber, cleaning operation consumed time or the like all can prolong the required activity duration of etch process.

2. the dry cleaning machine need take available cavity space in the etching machine, and the etching reaction chamber quantity that can install in the board is reduced.

3. when carrying out cleaning operation, fail to be absorbed simultaneously, may lower cleaning efficiency once again attached to the surface of glass substrate cleaning area for the particulate that air doctor blade is kicked up with air doctor blade.

4. directly brush glass surface with high pressure draught, can increase the glass surface buildup of static electricity, make the part particulate be adsorbed and be difficult to remove by electrostatic force easily, and make cleaning efficiency not good, in addition, even may cause static discharge, circuit unit is damaged.

Therefore, for the association area research staff who is engaged in the glass baseplate surface cleaning, there's no one who doesn't or isn't be devoted to solve the shortcoming of known technology, in the hope of obtaining better clean technologies.

Summary of the invention

The technical problem to be solved in the present invention provides a particulate and removes equipment, can when an object will enter process reaction room this object be cleaned, and effectively reduces cleaning time.

Another technical matters that the present invention will solve provides a particulate and removes equipment, can more effective utilization board inside processing space.

The another technical matters that the present invention will solve provides a particulate and removes equipment, can integrate several different methods and carry out dedusting simultaneously, improves cleaning efficiency.

The technical matters again that the present invention will solve provides a particulate and removes equipment, can reduce the static charge that the object desiring to react is accumulated.

For solving the problems of the technologies described above, the present invention combines setting with the particulate cleaning equipment with a process reaction room, will send into before reaction chamber reacts at object, with Ionized gas the object surface particulate is blown off in advance, and utilize dust sucking plant to suck the particulate that is blown afloat simultaneously, avoid attaching in object surface once more.

This process reaction room has a gate, and the particulate cleaning equipment that the present invention discloses is arranged at gate the place ahead, comprises a gas flow of ions blowing out device and a dust sucking plant.Wherein the setting of gas flow of ions blowing out device has an ion generator and a nozzle.Ion generator is a sharp electrode, behind the feeding high voltage, in the most advanced and sophisticated electric field density increase of electrode, and after making the effect of the gas generation ionization around the electrode, with nozzle the ionization air-flow is blown out.

The gas flow of ions blowing out device also is communicated with a gas piping, utilizes this gas piping supply gas flow of ions blowing out device gas-pressurized, and this gas-pressurized can use dried and clean air or nitrogen.

Dust sucking plant then is installed between gate and the gas flow of ions blowing out device, more can be connected with a negative pressure line, and then the particulate that sucks is entered to negative pressure line.

When object enters process reaction room, the gas flow of ions blowing out device sees through nozzle, blow out ionized gas in object surface with suitable angle, temperature and pressure, except the static charge that object surface can be accumulated neutralizes mutually, more can remove particulate and object between the electrostatic attraction and the remaining moisture that exist, making that particulate is easier is eliminated, and sucks the particulate of being kicked up by the gas flow of ions blowing out device by dust sucking plant simultaneously, prevents from that particulate from depositing once again to attach in object surface.

The particulate that discloses among the present invention is removed equipment more can utilize a mechanical arm, in order to transmission object, and control is passed through gas flow of ions blowing out device and dust sucking plant with suitable speed, in by the process of gate, finish the cleaning operation of the particulate of removing object surface simultaneously, and send in the process reaction room via gate and to react.

Description of drawings

Fig. 1 is known etched operating type configuration schematic diagram.

Fig. 2 A, Fig. 2 B have the structural representation that particulate is removed the process reaction room of equipment.

Fig. 3 is the operating type configuration schematic diagram of first embodiment of the invention.

Fig. 4 is the operating type configuration schematic diagram of second embodiment of the invention.

The drawing reference numeral explanation:

1 etching machine, 222 dust sucking plantes

10 glass substrates, 23 gas pipings

11 transfer chambers, 24 negative pressure line

12 mechanical arms, 3 etching machines

13 temporary rooms, 31 transfer chambers

14 etching reaction chambers, 32 temporary rooms

15 clean rooms, 321 temporary room bodies

2 etching reaction chambers, 322 particulate cleaning equipments

20 reaction chamber bodies, 33 first mechanical arms

21 gates, 34 etching reaction chambers

22 particulate cleaning equipments, 341 reaction chamber bodies

221 gas flow of ions blowing out device, 342 particulate cleaning equipments

2211 ion generators, 35 second mechanical arms

2212 nozzles

Embodiment

In the first embodiment of the present invention, the process reaction room that combines with particulate removing equipment that the present invention discloses is one to be arranged at the etching reaction chamber 2 in the etching machine, is used for a glass substrate 10 that scribbles photoresist is carried out etching.

See also Fig. 2 A, Fig. 2 B, it is the synoptic diagram that particulate is removed the process reaction room of equipment that has of the present invention's exposure, as shown in FIG.: a reaction chamber body 20, a gate 21, a particulate cleaning equipment 22, a gas piping 23 and a negative pressure line 24.

Gate 21 is arranged at reaction chamber body 20 porch.

Particulate cleaning equipment 22 is arranged at the place ahead of gate 21, comprises a gas flow of ions blowing out device 221, a dust sucking plant 222.

Gas flow of ions blowing out device 221 comprises an ion generator 2211 and a nozzle 2212.Ion generator 2211 is a plurality of sharp electrode, behind the feeding high voltage, in the most advanced and sophisticated electric field density increase of electrode, and makes the gas around the electrode produce the effect of ionization.And the ionization air-flow is blown out with nozzle 2212.

Gas flow of ions blowing out device 221 also is communicated with gas piping 23, utilizes the dried and clean air of gas piping 24 supply gas flow of ions blowing out device 221 1 pressurizations.

Particulate that dust sucking plant 222 can be kicked up gas flow of ions blowing out device 211 sucks, and is connected with a negative pressure line 25, can be with the particulate emission of suction to negative pressure line 25.

Glass substrate 10 enters reaction chamber body 20 carry out the etching operation before, can pass through particulate cleaning equipment 21 belows in advance, gas flow of ions blowing out device 221 wherein sees through nozzle 2212, blow out ionized gas in glass substrate 10 surfaces with suitable angle and pressure, except the static charge that glass substrate 10 surfaces are accumulated neutralizes mutually, more can remove particulate and glass substrate between the electrostatic attraction that exists, making that particulate is easier is eliminated, and suck the particulate of being kicked up by gas flow of ions blowing out device 221 by dust sucking plant 222, prevent from that particulate from depositing once again to attach in object surface.

See also Fig. 3, it is etching machine 3 configuration schematic diagram of first embodiment of the present invention's utilization.

Comprising transfer chamber 31, temporary room 32, first mechanical arm 33, several etching reaction chambers 34.

Be with known etching machine difference, because of wherein etching reaction chamber 34 reaction chamber bodies combine with the particulate cleaning equipment.So do not need additionally to install additional the dry cleaning machine, can remove the particulate of glass baseplate surface, make etching machine 3 inside clean room 15 need be set, be an etching reaction chamber 34 and can set up.

Wherein, when first mechanical arm 33 is sent glass substrate 10 into reaction chamber body 341 with suitable speed, through particulate cleaning equipment 342 belows, cleaning course as previously described, reduce the static charge that object surface is accumulated, and simultaneously the particulate of object surface is blown afloat and detaches, reach best cleaning effect after, carry out etching reaction.

As shown in Figure 4, in the second embodiment of the present invention, the process reaction room of removing equipment with the disclosed particulate of the present invention can be a temporary room 32.

Itself and the first embodiment difference are, glass substrate 10 is sent in the process of temporary room 32 by one second mechanical arm 35 with suitable speed, through particulate cleaning equipment 342 belows, cleaning course as previously described, the static charge that glass substrate 10 surfaces are accumulated neutralizes, and simultaneously the particulate of object surface is blown afloat and detaches, after finishing the cleaning on glass substrate 10 surfaces, glass substrate 10 enters in the temporary room, by first mechanical arm 33 glass substrate is shifted out from temporary room 32 again, send in each etching reaction chamber 34 and react.

By the explanation of the foregoing description, can find obviously that the process reaction room with particulate removing equipment has following advantage:

1. after glass substrate is finished cleaning, carry out etching in the reaction chamber body, can omit unnecessary transmitting step, save the required activity duration in the processing procedure with entering.

2. the particulate cleaning equipment is combined with process reaction room, can save the cleaning equipment occupation space, working space that can more effective utilization board inside.

3. except with air-flow the particulate of glass baseplate surface being blown down with the gas flow of ions blowing out device, still can utilize the ionization of air-flow, in and the electric charge of particulate, make the easier removing of particulate, more can simultaneously the particulate of kicking up be absorbed, carry out cleaning operation simultaneously by multiple function, effectively promote cleaning efficiency.

4. by the static charge of accumulating with glass baseplate surface in the gas flow of ions, solved the problem that may cause the assembly infringement because of static discharge.

Above-described embodiment is in order to describe explanation the present invention in detail; it is not in order to limit practical range of the present invention; anyly have the knack of this skill person and all should belong to scope of the present invention in the modification of doing without prejudice to spirit of the present invention, thus protection scope of the present invention when with claims as foundation.

Claims

1. a particulate is removed equipment, is installed in gate the place ahead of a process reaction room, in advance this object is cleaned before an object enters this process reaction room, and it comprises:

One gas flow of ions blowing out device is arranged at this gate the place ahead, and it comprises an ion generator and a nozzle, and this ion generator is the gas ionization around it, and utilizes this nozzle that Ionized gas is blown out; And

One dust sucking plant is arranged between this gate and this gas flow of ions blowing out device;

Enter in the process of this process reaction room at this object, the neutralize static charge of this object surface and the particulate that it is surperficial of the ionized gas that this gas flow of ions blowing out device is blown out kicked up, suck particulate by this dust sucking plant again, this object enters in this process reaction room via this gate at last.

2. particulate as claimed in claim 1 is removed equipment, it is characterized in that this gas flow of ions blowing out device is connected with a gas piping, and using provides this gas flow of ions blowing out device one gas-pressurized.

3. particulate as claimed in claim 2 is removed equipment, it is characterized in that this gas-pressurized is the dried and clean air.

4. particulate as claimed in claim 2 is removed equipment, it is characterized in that this gas-pressurized is a nitrogen.

5. particulate as claimed in claim 1 is removed equipment, it is characterized in that this dust sucking plant is connected with a negative pressure line, and the particulate that is extracted is entered in this negative pressure line.

6. particulate as claimed in claim 1 is removed equipment, it is characterized in that, this ion generator passes through the effluve mode with gas ionization.

7. particulate as claimed in claim 1 is removed equipment, it is characterized in that, this object utilizes mechanical arm carrying, this object is transmitted enter in this process reaction room by this gate.

8. particulate as claimed in claim 1 is removed equipment, it is characterized in that this process reaction room is an etching reaction chamber.

9. particulate as claimed in claim 1 is removed equipment, it is characterized in that this process reaction room is a temporary room.

10. particulate as claimed in claim 1 is removed equipment, it is characterized in that this particulate removing equipment is arranged in the etching machine.