TWI451915B - Cleaning device - Google Patents

Description

Cleaning device

The present invention relates to a cleaning device and a cleaning method, and more particularly to a cleaning device and a cleaning method for cleaning a narrow space of a semiconductor device manufacturing device.

In general, a substrate processing apparatus that performs a predetermined process on a substrate such as a wafer for a semiconductor device includes a processing chamber (hereinafter referred to as a "chamber") for accommodating a substrate to perform a predetermined process. In the chamber, deposits are generated due to the reaction product generated by the predetermined treatment. These adhered deposits become floating particles. When the particles adhere to the surface of the substrate, when a product manufactured by the substrate, for example, a semiconductor device, a short circuit occurs, the yield of the semiconductor device is lowered. Therefore, in order to remove the deposits in the chamber, maintenance such as wet washing in the chamber is performed by manual operation of the operator.

However, when facing the components of the narrow space such as the telescopic tube and the exhaust system part in the chamber, it is difficult to perform maintenance by the manual operation of the above-mentioned operator, and when the substrate processing apparatus is continuously used for a long time, The components of the narrow space will accumulate attachments. The particles caused by the deposited deposits invade the processing space of the substrate and adhere to the surface of the substrate. For example, in the case of a component facing a narrow space in the vicinity of the manifold, if the deposit deposited on the component is peeled off, the rotating blade of the exhaust pump disposed near the manifold bounces, and the rebounded particles invade the substrate. The processing space is such that the particles adhere to the surface of the substrate (for example, refer to Patent Document 1).

Therefore, conventionally, in order to remove the deposits of the components that are deposited in a narrow space facing the telescopic tube and the exhaust system components, a commercially available vacuum cleaner is used, for example, to attract the deposit by a vacuum cleaner having only a suction port.

[Patent Document 1] Japanese Patent No. 2006-005344

However, when the deposit is sucked by the commercially available vacuum cleaner, it is impossible to attract and remove the large deposit, and it is only possible to attract and remove the fine deposits, that is, it is difficult to sufficiently perform the washing of the components facing the narrow space. Therefore, when the substrate processing apparatus is used for a long period of time, the fine deposits are deposited on the components facing the narrow space, and the problem that the particles generated by the deposited deposits adhere to the surface of the substrate as described above occurs.

In order to solve the above problem, the maintenance of the constituent parts facing the narrow space is performed by replacing or disassembling the constituent parts facing the narrow space such as the bellows or the exhaust system parts, however, the maintenance is time consuming, labor intensive, and costly. The problem.

SUMMARY OF THE INVENTION An object of the present invention is to provide a cleaning apparatus and a cleaning method which are capable of efficiently and sufficiently washing components which face a narrow space.

In order to achieve the above object, the cleaning device according to the first aspect of the invention is a cleaning device that removes the adhering matter attached to the structure and cleans the structure, and removes the adhering matter attached to the structure. Further, the present invention is characterized in that: a discharge unit that discharges a mixture of a substance in a gas state and a substance in a state in which any one of a liquid and a solid is mixed to the deposit; and a mixture that sucks the discharged material and the suction The suction portion of the deposit attached to the mixture.

The cleaning device according to the first aspect of the invention, wherein the discharge port of the discharge unit is formed in a suction port of the suction unit.

The cleaning device according to the invention of claim 2, further comprising: a pump that simultaneously connects the discharge unit and the suction unit, wherein the pump has a discharge corresponding to the pump a first impeller and a second impeller of the suction portion, wherein the first impeller and the second impeller are disposed coaxially, and an inclination angle of each of the blades of the first impeller is opposite to an inclination angle of each of the blades of the second impeller .

The cleaning device according to the first aspect of the invention, wherein the suction port of the suction portion is disposed in the vicinity of the discharge port of the discharge portion.

The cleaning device according to any one of claims 1 to 4, wherein the discharge unit is composed of a tubular member, and the discharge portion is located at a cleaning device according to any one of claims 1 to 4 It has a necked shape near the discharge port.

The cleaning device according to any one of claims 1 to 5, wherein the discharge unit further has a heated gas sprayed toward the adhesion. In the heating gas ejecting portion of the object, the suction portion sucks the heated gas to be ejected and the deposit which is ejected by the heated gas.

The cleaning device according to any one of claims 1 to 6, wherein the discharge unit further imparts vibration to the gas and ejects the adhesion. The vibration of the object is supplied to the gas ejecting portion, and the suction portion sucks the sputtered gas to be ejected and the deposit which is ejected by the vibrating gas.

The cleaning device according to any one of claims 1 to 7, wherein the discharge unit further has a single pole ion sprayed toward the deposit. In the unipolar ion ejecting portion, the suction portion further includes a reverse electric field generating portion for generating an electric field which is extremely opposite to the unipolar ion at the suction port, and sucks the unipolar ion and the unipolar ion to be ejected. The aforementioned deposits are ejected.

The cleaning device according to any one of claims 1 to 8, wherein the discharge unit further has a plasma sprayed toward the deposit. In the plasma discharge unit, the suction unit sucks the discharged plasma and the deposits discharged from the plasma.

The cleaning device according to any one of claims 1 to 9, wherein the discharge unit further has a brush portion for wiping off the attached object. The suction portion sucks the deposit attached to the brush portion.

The cleaning device according to any one of claims 1 to 10, wherein the discharge unit further comprises a sterilization method for performing sterilization of the structure. Bacterial device.

In order to achieve the above object, the cleaning method according to claim 12 is a method for cleaning the structure by removing the adhering matter attached to the structure, and is characterized in that the gas state is mixed. a step of discharging a substance and a mixture of the same substance as the liquid or solid in the same state as the substance to be deposited; and a step of sucking the discharged mixture and the attached matter discharged from the mixed body.

The cleaning method according to the invention of claim 12, further comprising a heating gas spraying step of spraying the heated gas onto the deposit, the sucking step The heated gas to be ejected and the attached matter ejected by the heated gas are attracted.

The cleaning method according to claim 12, wherein the cleaning method according to the invention of claim 12, further comprising a gas discharge step of imparting vibration to the gas and spraying the vibration on the deposit. The suction step attracts the gas to be sprayed and the deposit to be discharged by the vibration imparting gas.

The cleaning method according to any one of claims 12 to 14, wherein the unipolar ion is sprayed to the deposit by the monopolar ions. a discharging step and a reverse electric field generating step for generating an electric field which is extremely opposite to the monopolar ion, wherein the suction step attracts the discharged monopolar ions and the deposits discharged by the monopolar ions.

The cleaning method according to any one of claims 12 to 15, wherein the plasma cleaning method of spraying the plasma onto the deposit is further provided. In the step, the attracting step attracts the discharged plasma and the deposits ejected by the plasma.

The cleaning method according to any one of claims 12 to 16, wherein the cleaning method of removing the attachment by the brush portion is further provided. In addition to the step, the aforesaid suction step attracts the deposit attached by the brush portion.

The washing method according to any one of claims 12 to 17, wherein the washing method is the sterilization step of performing the sterilization of the structure.

According to the cleaning device of the first aspect of the invention, and the cleaning method according to claim 12, the substance in which the gas state is mixed is the same as the substance in any of the liquid and the solid state. The mixture of the substances is ejected toward the adhering matter attached to the structure, and the adhering substance sprayed from the mixture can be peeled off from the structure by the viscous force, physical impact, and entrapment of the mixture. Then, since the adhered mixture and the adhering matter discharged from the mixed body are attracted, the adhering material peeled off from the structural body can be sucked, so that the fine deposit which cannot be removed by suction alone can be removed. Thereby, the constituent parts facing the narrow space in the substrate processing apparatus can be sufficiently washed, and therefore, the yield of the manufactured semiconductor device can be prevented from being lowered.

According to the cleaning device of the second aspect of the invention, since the discharge port of the discharge portion is formed in the suction port of the suction portion, the mixture that is discharged from the discharge port and the mixture are reliably sucked at the suction port. Attachment, and the composition of the cleaning device is simplified.

According to the cleaning device of the third aspect of the invention, since the first impeller corresponding to the discharge portion and the second impeller corresponding to the suction portion are connected to the discharge portion and the suction portion, the pump is coaxially disposed. In the first impeller and the second impeller, and the inclination angle of each of the blades of the first impeller is opposite to the inclination angle of each of the blades of the second impeller, the discharge portion can eject the gas and simultaneously attract the gas by the suction portion. In addition, the miniaturization of the pump can be achieved.

According to the cleaning device of the fourth aspect of the invention, the suction port of the suction portion is disposed in the vicinity of the discharge port of the discharge portion, and the suction port can surely suck the mixture discharged from the discharge port and the mixture to be ejected. Attachment. Further, since the arrangement of the discharge portion and the suction portion has a high degree of freedom, it is possible to efficiently and surely remove fine deposits adhering to the structure facing the narrower space.

According to the cleaning device of the fifth aspect of the invention, since the discharge portion composed of the tubular member has a necked shape in the vicinity of the discharge port, the gas discharged from the discharge portion can be accelerated in the vicinity of the discharge port. . As a result, a part of the gas can be atomized near the discharge port, and the acceleration of the gas can be utilized to form a shock wave.

According to the cleaning apparatus of the sixth aspect of the invention, and the cleaning method according to the thirteenth aspect of the patent application, the heated gas is sprayed on the adhering matter attached to the structure, and the heat of the heated gas is utilized. The deposit or the like to which the heated gas is sprayed can be peeled off from the structure. Then, since the adhered gas which is ejected and the adhered matter of the heated gas are sucked, the adhering substance peeled off from the structure can be sucked, so that the fine deposit can be removed more efficiently.

According to the cleaning device described in the seventh aspect of the invention, and the cleaning method described in claim 14, the vibration is applied to the gas (pulsation, pulse, etc.) and is sprayed on the attached matter attached to the structure. The adhering substance to which the gas to be vibrated is sprayed can be peeled off from the structure by a fierce physical collision of molecules in the gas to which the vibration is applied. Then, by sucking the gas to be vibrated and the adhering matter which is emitted by the gas to be vibrated, the adhering substance peeled off from the structure can be sucked, so that the fine deposit can be removed more efficiently.

According to the cleaning apparatus of the eighth aspect of the invention, and the cleaning method according to the fifteenth aspect of the patent application, the monopolar ions are ejected to the adhering substance attached to the structure, and the single pole ion can be used to make the single The deposits ejected by the polar ions carry a single pole of electricity. Next, an electric field which is extremely opposite to the unipolar ions is generated at the suction port, and the unipolar ions to be ejected and the deposits ejected by the unipolar ions are attracted, so that the single strip can be peeled off from the structure by the attraction force. Since the deposit of the electrode is attracted to the deposited object, the fine deposit can be removed more efficiently.

According to the cleaning device of the ninth aspect of the invention, and the cleaning method according to claim 16, the plasma can be used for ejecting the plasma attached to the structure, and in particular, the plasma can be used. The chemical reaction of the radicals in the plasma removes the deposits ejected from the plasma from the structure. Next, the adhered material discharged from the structure can be attracted by sucking the discharged plasma and the deposit discharged from the plasma. Therefore, the fine deposits can be removed more efficiently.

According to the washing apparatus of the tenth aspect of the patent application and the washing method of the seventeenth aspect of the patent application, since the adhering matter attached to the structure is wiped off, the deposit can be peeled off from the structure. Then, since the adhered matter is sucked and attracted, the adhering substance peeled off from the above-mentioned structure can be sucked, so that the deposit can be reliably removed.

According to the washing apparatus of the eleventh aspect of the patent application and the washing method of claim 18, the structure can be sterilized by the sterilization of the structure. As a result, it is possible to prevent the occurrence of contaminants caused by bacterial proliferation in the substrate processing apparatus.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

First, a substrate processing apparatus to which a cleaning apparatus according to an embodiment of the present invention is applied will be described.

Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a cleaning apparatus according to an embodiment of the present invention is applied.

In the first embodiment, a wafer W for a semiconductor device (hereinafter simply referred to as "wafer W") is subjected to a plasma treatment, for example, a substrate configured by an etching treatment device using reactive ion etching (Reactive Ion Etching). The processing apparatus 10 is provided with a chamber 11 made of a metal such as aluminum or stainless steel as a processing chamber.

In the chamber 11, for example, a wafer W having a diameter of 300 mm is placed, and a wafer 12 that can be lifted up and down in the chamber 11 together with the placed wafer W is disposed as a lower electrode 12 of the mounting table, and The shower head 13 of the processing gas to be described later is supplied to the ceiling portion of the chamber 11 so as to face the lower electrode 12.

The lower electrode 12 is coupled to the lower high frequency power source 14 via a lower integrator 15, and the lower high frequency power source 14 supplies a predetermined high frequency power to the lower electrode 12. Also. The lower integrator 15 reduces the reflection of the high frequency power from the lower electrode 12 and maximizes the incidence efficiency of the high frequency power to the lower electrode 12.

Above the inside of the lower electrode 12, an ESC 16 that sucks the wafer W by electrostatic attraction is disposed. The ESC 16 is internally provided with an ESC electrode plate 17 formed by laminating an electrode film, and the ESC electrode plate 17 is electrically connected to a DC power source 18. The ESC 16 uses the Coulomb force or Johnsen-Rahbek force generated by applying a DC voltage to the ESC electrode plate 17 by the DC power source 18 to hold and hold the wafer W thereon. Further, an annular focus ring 20 composed of bismuth (Si) or the like is disposed on the periphery of the ESC 16, and the focus ring 20 converges the plasma generated above the lower electrode 12 toward the wafer W.

Below the lower electrode 12, a support 23 extending downward from the lower portion of the lower electrode 12 is disposed. The support body 23 supports the lower electrode 12, and the lower electrode 12 is lifted and lowered by rotating a ball screw (not shown). Further, the periphery of the support body 23 is covered with the bellows 40 to be isolated from the environment inside the chamber 11. Further, around the bellows 40 (structure), the bellows covers 24 and 25 are respectively covered, and a narrow space which is extremely narrow is formed in the vicinity of the bellows 40.

On the side wall of the chamber 11, a carry-out port 26 and an exhaust portion 27 (structure) of the wafer W are disposed. The transfer arm (not shown) provided with an LLM (mounting lock module) (not shown) disposed in the vicinity of the substrate processing apparatus 10 is used to carry out the transfer of the wafer W into the chamber 11 through the carry-out port 26 In. The exhaust unit 27 is connected to an exhaust system including an exhaust manifold, an APC (Automatic Pressure Control) threshold, a DP (Dry Pump), a TMP (Turbo Molecular Pump), and the like (all not shown), and the chamber 11 is connected. The air inside is discharged to the outside. Further, in the vicinity of the exhaust portion 27, a very narrow and narrow space is formed.

In the substrate processing apparatus 10, when the wafer W is loaded into the chamber 11, the lower electrode 12 is lowered to the same height as the carry-out port 26, and when the wafer W is subjected to plasma processing, the lower electrode 12 is raised to the wafer W. position. In addition, FIG. 1 is a positional relationship between the carry-out port 26 and the lower electrode 12 when the wafer W is carried into the chamber 11.

Further, the shower head 13 has a disk-shaped upper electrode (CEL) 29 having a plurality of gas vent holes 28 facing the processing space S in the space above the lower electrode 12, and is disposed above the upper electrode 29 so as to be detachable. The electrode support 30 of the upper electrode 29 is supported in a manner. Further, the surface corresponding to the outer peripheral portion of the processing space S of the upper electrode 29 is covered by the inner peripheral portion of the shielding ring 35 of the annular member disposed in the ceiling portion in the chamber 11. The shielding ring 35 is made of, for example, quartz or the like, and is used to protect a screw (not shown) for screwing the upper electrode 29 disposed on the outer peripheral portion of the upper electrode 29 to the ceiling portion of the chamber 11 from the plasma.

The upper electrode 29 is connected to the upper high-frequency power source 31 via the upper integrator 32, and the upper high-frequency power source 31 supplies predetermined high-frequency power to the upper electrode 29. Further, the upper integrator 32 reduces the reflection of the high frequency power from the upper electrode 29 and maximizes the incident efficiency of the high frequency power to the upper electrode 29.

Inside the electrode support 30, a buffer chamber 33 is disposed, and the buffer chamber 33 is connected to a processing gas introduction pipe (not shown). A processing gas composed of, for example, oxygen (O ₂ ), argon (Ar), and carbon tetrafluoride (CF ₄ ) alone or in combination is introduced into the buffer chamber 33 from the processing gas introduction pipe, and the introduced process gas is introduced through the gas. The vent hole 28 is supplied to the processing space S.

In the chamber 11 of the substrate processing apparatus 10, as described above, high-frequency power is applied to the lower electrode 12 and the upper electrode 29, and high-density power is generated by the applied high-frequency power in the processing space S by using the processing gas. Slurry, and produce plasma composed of ions or radicals. The generated plasma is condensed to the surface of the wafer W by the focus ring 19 to physically or chemically etch the surface of the wafer W.

Further, in the chamber 11 of the substrate processing apparatus 10, a reaction product or the like is generated during the etching, and the reaction product adheres to each component in the chamber 11, for example, adheres to the bellows 40 or the exhaust gas. Part 27.

Next, a cleaning device according to an embodiment of the present invention will be described. The cleaning device of the present embodiment is particularly suitable for cleaning the components facing the narrow space in the substrate processing apparatus.

Fig. 2(A) is a conceptual diagram showing a schematic configuration of a washing apparatus according to an embodiment of the present invention.

In addition, the right side of the 2nd (A) figure is called "right side", and the left side is called "left side". Further, the second (B) is a schematic configuration diagram of the impeller of the pump of the second (A) diagram.

In the second (A) diagram, the cleaning device 100 includes a main body 120 surrounded by a casing (not shown), and the suction pipe 112 and the discharge pipe are extended to the right side so as to penetrate the casing from the inside of the main body 120. a double pipe nozzle 110 formed of a pipe 114; a discharge pipe 114 connected to the inside of the main body 120, and a gas supply pipe 140 for supplying a predetermined gas to be supplied to the discharge pipe 114 by a gas supply device (not shown); a suction pipe 112 inside 120, a gas exhaust pipe 150 for exhausting the suction gas in the suction pipe 112 to the outside, and a detoxification device disposed on the way of the gas exhaust pipe 150 and disposed outside the body 120 130.

Further, inside the main body 120, a pump 124, a particle removing filter 122, and a particle monitor 121 shown in Fig. 2(B) are disposed in this order from the left side of the double nozzle 110. Further, the double pipe nozzle 110 is disposed on the left side of the pump 124, and the discharge pipe 114 passes through the side surface of the suction pipe 112 to separate the suction pipe 112, whereby the discharge pipe 114 and the suction pipe 112 are separate pipes.

As shown in Fig. 2(B), the pump 124 has a center shaft 127 at the center thereof, and the center shaft 127 is counterclockwise in the figure by a rotational driving force from a motor (not shown) coupled to the center shaft 127. Direction rotation. Further, a plurality of vanes 126a extending from the central axis 127 toward the outer side in the radial direction are disposed at equal intervals around the central axis 127. The central shaft 127 and the plurality of vanes 126a constitute a discharge impeller 124a, and the ejecting impeller 124a The discharge pipe 114 is disposed in the double pipe nozzle 110. The blade 126a is provided with an inclination angle for the purpose of rotating the gas in the discharge pipe 114 from the left side to the right side in the second (A) diagram by rotating in the counterclockwise direction.

Further, the pump 124 has an annular shaft 128 that is joined to the outer end portion of each of the vanes 126a in the radial direction and that is disposed so as to surround each of the vanes 126a. Further, a plurality of blades 125a extending from the annular shaft 128 toward the outer side in the radial direction are disposed at equal intervals around the annular shaft 128. The annular shaft 128 and the plurality of blades 125a constitute a suction impeller 124b. The impeller 124b is interposed in the suction pipe 112 of the double pipe nozzle 110. The blade 125a is disposed to rotate in the counterclockwise direction so that the gas in the suction pipe 112 flows from the right side to the left side in the second (A) view, and the inclination angle disposed on the blade 126a is opposite. The angle of inclination.

Thereby, the pump 124 can eject the gas to the discharge pipe 114 while attracting the gas by the suction pipe 112. Further, since the pump 124 is disposed coaxially with the suction impeller 124b and the discharge impeller 124a, the pump 124 can be downsized.

Further, in the present embodiment, the annular shaft 128 is not joined to the inner blades 126a and is coupled to a motor (not shown) other than the motor to which the center shaft is coupled, and the rotational driving force from each of the motors is adjusted. The inner blade 126a and the outer blade 125a can be arbitrarily rotated individually. Thereby, the discharge force of the gas ejected from the discharge pipe 114 and the gas attraction force of the suction pipe 112 can be arbitrarily adjusted.

The particle removing filter 122 is for removing particles in the attracting gas in the suction pipe 112. The particle monitor 121 monitors the amount of particles in the attracting gas in the suction pipe 112 by, for example, a laser light diffusion method. By monitoring the amount of particles in the attracting gas, the end of the washing process described later can be detected. The detoxification device 130 has activated carbon or the like inside, and absorbs organic substances and harmful substances contained in the gas by the activated carbon.

Fig. 3(A) is an enlarged cross-sectional view showing a schematic configuration of a front end portion of the double pipe nozzle 110 of Fig. 2(A), and Fig. 3(B) is a schematic configuration of a front end portion of the double pipe nozzle 110. Stereo picture. In addition, the third (A) diagram is an explanatory view when the particles P adhering to the surface of the structure 50 are washed by the double nozzle 110. Further, the structure (constituting part) facing the narrow space corresponds to the bellows 40 and the exhaust portion 27. Here, for the convenience of description, the generalized structure 50 will be described.

In the third (A) diagram, the double nozzle 110 has a discharge pipe 114 and a suction pipe 112 surrounding the discharge pipe 114. The discharge port 114a of the discharge pipe 114 is formed in the suction port 112a of the suction pipe 112. The discharge pipe 114 has a neck portion 114b in the vicinity of the discharge port 114a, and the predetermined gas supplied by the gas supply pipe 140 and accelerated by the pump 124 to a predetermined flow rate is further accelerated in the neck portion 114b. As a result, the gas pressure in the discharge pipe 114 of the neck portion 114b is rapidly lowered, and a part of the gas is solidified by the heat expansion of the gas to partially atomize the gas. In addition, the gas forms a shock wave due to acceleration. Thereby, the discharge pipe 114 sprays a shock wave containing a mist composed of a gas and a substance which is the same as the gas to the particles P adhering to the surface of the structure 50.

In the present embodiment, in order to eject a mist-containing gas from the discharge pipe 114, the gas supply device (not shown) supplies a gas containing a component which is easily atomized. Further, the cleaning device 100 of the present embodiment is mainly used under atmospheric pressure and at a normal temperature, and the gas ejected from the discharge pipe 114 is a gas or a liquid and a temperature interval between a melting point and a boiling point at atmospheric pressure and normal temperature. A narrower sublimation and volatility gas is preferred. The gas supplied from the gas supply means to the discharge pipe 114 is, for example, nitrogen, argon, carbon dioxide, water, or ethanol.

Further, in the environment in which the external enthalpy is not sparse, the speed of the gas ejected from the discharge pipe 114 is the largest from the discharge port 114a to about 20 mm, and the inventors have confirmed by numerical simulation or the like. The distance L ₂ from the outlet 114a to the structure 50 is preferably set to 20 mm or less. Further, when the gas discharged from the discharge pipe 114 contains a harmful substance, it is preferable to set the distance L ₁ from the suction port 112a to the structure 50 to 10 mm or less in order to reduce the amount of gas released to the external environment. Therefore, it is preferable that the front end portion of the double pipe nozzle 110 has a shape in which the suction port 112a of the suction pipe 112 protrudes from the discharge port 114a of the discharge pipe 114 by about 10 mm.

Hereinafter, the washing process by the washing apparatus according to the embodiment of the present invention will be described.

Fig. 4 is a view showing a step of washing treatment by a washing apparatus according to an embodiment of the present invention.

In Fig. 4, first, a shock wave containing a gas and a mist A composed of the same substance as the gas is ejected from the discharge port 114a of the discharge pipe 114 of the double pipe nozzle 110 toward the particles P adhering to the surface of the structure 50 ( Figure 4(A)).

Next, the particles P adhering to the surface of the structure 50 are peeled off from the surface of the structure 50 due to the viscous force of the gas, the physical impact of the gas, the physical impact of the mist A, and the entrapment of the mist A (4th ( B) Figure).

Then, the particles P peeled off from the surface of the structure 50 are sucked from the suction port 112a to the suction pipe 112 and supplied to the gas exhaust pipe 150 to be exhausted to the outside (Fig. 4(C)).

According to the washing process of Fig. 4, a shock wave containing a gas and a mist A composed of the same substance as the gas is ejected from the discharge port 114a to the particles P, and the particles are peeled off due to the viscous force of the gas, and are attracted. Since the mouth 112a is attracted, the fine particles P (adhesives) which cannot be removed by suction alone can be removed. Thereby, it is possible to surely clean the constituent parts facing the narrow space in the substrate processing apparatus 10, and therefore, it is possible to prevent a decrease in the yield of the final semiconductor device.

Further, since the gas and the mist composed of the same substance are generated, it is not necessary to particularly mix other substances which are easily solidified in the gas, and the treatment of the gas is easier, and the constitution of the gas supply device can be simplified.

Next, a washing process using a modification of the washing apparatus according to the embodiment of the present invention will be described. In the modification of the cleaning device shown below, the configuration may be such that the discharge pipe 114 is provided inside the suction pipe 112, and the following configuration is added.

Fig. 5(A) and Fig. 5(B) are diagrams showing the steps of the washing process in the first modification of the washing apparatus according to the embodiment of the present invention.

First, the heating gas which is heated by the heating unit 141 disposed on the way of the gas supply pipe 140 is ejected from the discharge port 214a of the heated gas discharge pipe 214 of the nozzle 210 toward the particles P adhering to the surface of the structure 50 (5th (A )))).

Then, the particles P sprayed by the heated gas are peeled off from the surface of the structure 50 due to the thermal stress of the gas, and are sucked from the suction port 112a to the suction pipe 112 to be exhausted to the outside (5th (B) Figure).

According to the cleaning process of the fifth (A) and the fifth (B), the heating gas is ejected from the ejection port 214a to the particles P, and the particles P are peeled off by the thermal stress of the gas, and are attracted by the suction port 112a. The fine particles P can be removed more efficiently.

Fig. 5(C) and Fig. 5(D) are diagrams showing the steps of the cleaning process in the second modification of the cleaning device according to the embodiment of the present invention.

First, the ultrasonic wave generating device 315 that is provided to the discharge port 314a of the gas discharge pipe 314 by the vibration of the nozzle 310 applies vibration to the gas, and the discharge port 314a of the gas discharge pipe 314 is supplied from the vibration to the particles P attached to the surface of the structure 50. The vibration is given to the gas (Fig. 5(C)).

Then, the particles P to which the gas is applied by the vibration are applied to the gas to cause a strong physical collision or the like of the molecules in the gas imparting vibration, and are peeled off from the surface of the structure 50 and sucked by the suction port 112a to the suction pipe. 112 and exhausted to the outside (Fig. 5(D)).

According to the cleaning process of the fifth (C) and the fifth (D), the gas is supplied to the particles P from the discharge port 314a, and the particles are peeled off by the intense physical collision of the molecules, and are attracted by the suction port 112a. The fine particles P are removed more efficiently.

Fig. 6(A) and Fig. 6(B) are diagrams showing the steps of the cleaning process in the third modification of the cleaning device according to the embodiment of the present invention.

First, the unipolar ions I supplied from the monopolar ion supply pipe 142 are ejected from the particles P adhering to the surface of the structure 50 from the discharge port 414a of the unipolar ion discharge pipe 414 of the nozzle 410 (Fig. 6(A)).

Next, the particles P sprayed by the unipolar ions I are charged with a single pole due to the monopolar ions I, and are generated by the electrode plates 415 (reverse electric field generating portions) disposed in the vicinity of the suction ports 112a of the suction tube 112. The unipolar ion I is peeled off from the surface of the structure 50 by the attractive force of the electric field of the inverse pole, and is sucked from the suction port 112a to the suction pipe 112 to be exhausted to the outside (Fig. 6(B)).

According to the washing process of the sixth (A) and the sixth (B), the monopole ion I is ejected from the ejection port 414a to the particles P, and the particles P are charged by the monopolar ion I, and the monopolar ion I is utilized. The particles P are peeled off by the attraction of the electric field of the reverse polarity, and the suction is carried out by the suction port 112a, whereby the fine particles P can be removed more efficiently.

Further, in the water treatment, if the particles P are attached to the electrode plate 415 disposed in the vicinity of the suction port 112a of the suction pipe 112, the attraction force of the electrode plate 415 is lowered, and the vibrator or the heating may be connected by the electrode plate 415. Or the like to prevent the adhesion of the particles P.

Fig. 6(C) and Fig. 6(D) are diagrams showing the steps of the cleaning process in the fourth modification of the cleaning device according to the embodiment of the present invention.

First, the discharge port 514a of the radical discharge pipe 514 of the nozzle 510 is plasma-generated by the atmospheric plasma generating device 515, and the plasma, in particular, the radical in the plasma is sprayed to the surface of the structure 50. Particle P (Fig. 6(C)).

Then, the particles P sprayed by the radicals are peeled off from the surface of the structure 50 by the chemical reaction of the radicals, and are sucked by the suction port 112a to the suction pipe 112 to be exhausted to the outside (Fig. 6(D)).

According to the washing process of the sixth (C) and the sixth (D), the radicals in the plasma generated by the atmospheric plasma generating device 515 are ejected from the ejection port 514a by the ejection port 514a, and the radical is generated by the radical The chemical reaction causes the particles P to be peeled off and is attracted by the suction port 112a, so that the fine particles P can be removed more efficiently.

Fig. 7(A) is an enlarged cross-sectional view showing a schematic configuration of a main part of a fifth modification of the cleaning device according to the embodiment of the present invention.

In the seventh (A) diagram, the nozzle 610 has a discharge pipe 614 and a suction pipe 112 surrounding the discharge pipe 614. The discharge pipe 614 has a rotating brush 615 at the discharge port 614a, and the discharge pipe 614 rotates the rotating brush 615 to wipe off the particles P adhering to the structure 50, and simultaneously ejects the gas, thereby reliably pushing the particles P and The particles P eject gas. Thereby, the particles P can be peeled off, so that the particles P can be surely removed.

Fig. 7(B) is an enlarged cross-sectional view showing a schematic configuration of a main part of a sixth modification of the cleaning device according to the embodiment of the present invention.

In the seventh (B) diagram, the nozzle 710 has a discharge pipe 714 and a suction pipe 112 surrounding the discharge pipe 714. The discharge pipe 714 has a low-pressure mercury lamp 715 in the vicinity of the discharge port 714a. The discharge pipe 714 irradiates the structure 50 with ultraviolet rays having a wavelength of about 254 nm from the low-pressure mercury lamp 715 and ejects gas to the particles P. Thereby, the particles P can be removed and the structure 50 can be sterilized, so that the occurrence of contaminants caused by the proliferation of the bacteria adhering to the structure 50 can be prevented.

Fig. 8(A) is a perspective view showing a schematic configuration of a main part of a seventh modification of the cleaning device according to the embodiment of the present invention.

In the eighth (A) diagram, the double tube nozzle 810 has a flattened discharge pipe 814; and a flat tube having the same flat shape as the discharge pipe 814, surrounding the discharge pipe 814; and the discharge pipe 814 The discharge port 814a is formed in the suction port 812a of the suction pipe 812. Thereby, the above-described respective washing treatments are performed to remove the fine particles P. Further, since the double pipe nozzle 810 is composed of a discharge pipe 814 having a flat shape and a suction pipe 812, and has a shape suitable for scraping, the structure can be scraped and washed by the front end portion of the double pipe nozzle.

Fig. 8(B) is an enlarged cross-sectional view showing a schematic configuration of a main part of an eighth modification of the cleaning device according to the embodiment of the present invention.

As shown in Fig. 8(B), the double tube structure of the non-ejection tube 914 and the suction tube 912 may be arranged, and the suction port 912a of the suction tube 912 may be disposed near the discharge port 914a of the discharge tube 914. . In the present modification, each of the above-described washing treatments may be performed to remove fine deposits. Further, in the present modification, since the degree of freedom in arrangement of the discharge pipe 914 and the suction pipe 912 is high, the fine particles P adhering to the structure facing the narrower narrow space surface can be efficiently and surely removed.

In the above-described embodiment, the substrate processing apparatus to which the present invention is applied is an etching processing apparatus for a semiconductor device manufacturing apparatus. However, the substrate processing apparatus to which the present invention is applied is not limited thereto, and may be applied to other uses. The plasma semiconductor device manufacturing apparatus is, for example, a film forming processing apparatus such as CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition). Furthermore, the present invention can also be applied to an ion implantation processing apparatus, a vacuum transfer apparatus, a heat treatment apparatus, an analysis apparatus, an electron accelerator, an FPD (Flat Panel Display) manufacturing apparatus, a solar cell manufacturing apparatus, or an etching processing apparatus of a physical quantity analyzing apparatus. A substrate processing apparatus having a narrow space such as a film processing apparatus.

Further, the present invention can be applied not only to a substrate processing apparatus but also to a cleaning apparatus for medical instruments and the like.

S. . . Processing space

W. . . Wafer

A. . . Fog

1. . . Monopolar ion

P. . . particle

10. . . Substrate processing device

27. . . exhaust vent

40. . . flexible tube

50. . . Structure

100. . . Cleaning device

110. . . Double tube nozzle

112. . . Suction tube

114. . . Ejection tube

124. . . Pump

124a. . . Spraying impeller

124b. . . Attracting the impeller

Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a cleaning apparatus according to an embodiment of the present invention is applied.

Fig. 2(A) is a conceptual diagram showing a schematic configuration of a cleaning device according to an embodiment of the present invention, and Fig. 2(B) is a schematic configuration diagram of an impeller of a pump according to a second (A) diagram.

Fig. 3(A) is an enlarged cross-sectional view showing a schematic configuration of a front end portion of the double pipe nozzle of Fig. 2(A), and Fig. 3(B) is a perspective view showing a schematic configuration of a discharge port and a suction port of the double pipe nozzle.

Fig. 4 is a view showing the steps of the washing process by the washing apparatus of the embodiment of the present invention.

5(A) and (B) are diagrams showing the steps of the washing process according to the first modification of the washing apparatus according to the embodiment of the present invention, and (C) and (D) are washing using the embodiment of the present invention. A step of the cleaning process of the second modification of the cleaning device.

6(A) and 6(B) are diagrams showing the steps of the cleaning process according to the third modification of the cleaning device according to the embodiment of the present invention, and (C) and (D) are washed by the embodiment of the present invention. A step of the cleaning process of the fourth modification of the cleaning device.

7(A) is an enlarged cross-sectional view showing a schematic configuration of a main part of a fifth modification of the cleaning apparatus according to the embodiment of the present invention, and (B) is a sixth modification of the cleaning apparatus according to the embodiment of the present invention. An enlarged cross-sectional view showing the schematic configuration of the main part.

Fig. 8(A) is a perspective view showing a schematic configuration of a main part of a seventh modification of the cleaning apparatus according to the embodiment of the present invention, and (B) is a main modification of the eighth modification of the cleaning apparatus according to the embodiment of the present invention. An enlarged cross-sectional view of a schematic configuration of a part.

P. . . particle

50. . . Structure

110. . . Double tube nozzle

112. . . Suction tube

112a. . . Attraction

114. . . Ejection tube

114a. . . Spray outlet

114b. . . Necking

140. . . Gas supply piping

150. . . Gas exhaust pipe

Claims (7)

A cleaning device for removing a structure attached to a structure to remove the structure, and comprising: a tubular discharge portion that mixes a substance in a gaseous state with liquid and solid a mixture of the same substances in any of the above-mentioned substances is ejected toward the deposit; and a circular tubular suction portion attracts the discharged mixture and the deposits discharged from the mixture; the circular tubular suction portion is coaxial The inside of the circular tubular discharge portion is surrounded by a suction port of the circular tubular suction portion, and is opened in the suction port; and the suction port of the circular tubular suction portion The pump protrudes from the discharge port of the circular tubular discharge portion, and further includes a pump that simultaneously connects the circular tubular discharge portion and the circular tubular suction portion, and the pump has a first impeller corresponding to the circular tubular discharge portion and corresponding In the second impeller of the circular tubular suction portion, the first impeller and the second impeller are disposed coaxially, and the inclination angle of each of the first impellers and the second blade The inclination angle of each blade opposite. A cleaning device for removing a structure attached to a structure to remove the structure, and comprising: a tubular discharge portion that mixes a substance in a gaseous state with liquid and solid a mixture of the same substances in either state The deposit is ejected; and the tubular suction portion sucks the discharged mixture and the deposit discharged from the mixture; and the circular tubular discharge portion further has a heating for spraying the heated gas toward the deposit. In the gas ejecting portion, the circular tubular suction portion sucks the heated gas to be ejected and the attached matter ejected by the heated gas; and the circular tubular suction portion coaxially encloses the circular tubular ejecting portion, The discharge port of the circular tubular discharge portion is surrounded by the suction port of the circular tubular suction portion, and is opened in the suction port; the suction port of the circular tubular suction portion is formed by the discharge port of the circular tubular discharge portion protruding. A cleaning device for removing a structure attached to a structure to remove the structure, and comprising: a tubular discharge portion that mixes a substance in a gaseous state with liquid and solid a mixture of the same substances in any of the above-mentioned substances is ejected toward the deposit; and a circular tubular suction portion attracts the discharged mixture and the deposits discharged from the mixture; the circular tubular suction portion is coaxial The inside of the circular tubular discharge portion is surrounded by a suction port of the circular tubular suction portion, and is opened in the suction port; and the suction port of the circular tubular suction portion Projecting from the aforementioned discharge port of the above-mentioned circular tubular discharge portion, The circular tubular discharge portion further includes a gas discharge portion that imparts vibration to the gas and is sprayed toward the deposit, and the circular tubular suction portion sucks the sprayed vibration-imparting gas and the deposit that is emitted by the vibration-imparting gas. . A cleaning device for removing a structure attached to a structure to remove the structure, and comprising: a tubular discharge portion that mixes a substance in a gaseous state with liquid and solid a mixture of the same substances in any of the above-mentioned substances is ejected toward the deposit; and a circular tubular suction portion attracts the discharged mixture and the deposits discharged from the mixture; the circular tubular suction portion is coaxial The inside of the circular tubular discharge portion is surrounded by a suction port of the circular tubular suction portion, and is opened in the suction port; and the suction port of the circular tubular suction portion The circular tubular discharge portion further has a single-pole ion discharge portion that sprays the monopolar ions toward the deposit, and the circular tubular suction portion is further provided at the suction port by the discharge port of the circular tubular discharge portion. a reverse electric field generating portion that generates an electric field that is extremely opposite to the unipolar ion, and sucks the unipolar ions that are ejected and the deposits that are ejected by the unipolar ions A cleaning device for removing a deposit attached to a structure to clean the structure, and comprising: a tubular discharge portion that mixes a substance in a gaseous state and a mixture of the same substance in any of the liquid and the solid state is ejected toward the deposit; and a tubular suction portion that sucks the discharged mixture and the deposit discharged from the mixture; the circular tube The suction portion coaxially encloses the circular tubular discharge portion, and the discharge port of the circular tubular discharge portion is surrounded by the suction port of the circular tubular suction portion, and is opened in the suction port; the circular tubular suction portion The suction port protrudes from the discharge port of the circular tubular discharge portion, and the circular tubular discharge portion further has a plasma discharge portion that sprays plasma toward the deposit, and the circular tubular suction portion sucks the discharged portion. The plasma and the aforementioned deposits ejected by the plasma. A cleaning device for removing a structure attached to a structure to remove the structure, and comprising: a tubular discharge portion that mixes a substance in a gaseous state with liquid and solid a mixture of the same substances in any of the above-mentioned substances is ejected toward the deposit; and a circular tubular suction portion attracts the discharged mixture and the deposits discharged from the mixture; the circular tubular suction portion is coaxial The inside of the circular tubular discharge portion is surrounded by a suction port of the circular tubular suction portion, and is opened in the suction port; and the suction port of the circular tubular suction portion By the aforementioned round tubular spray The discharge port of the outlet portion protrudes, and the circular tubular discharge portion further has a brush portion for wiping off the deposit, and the circular tubular suction portion attracts the attached matter wiped by the brush portion. A cleaning device for removing a structure attached to a structure to remove the structure, and comprising: a tubular discharge portion that mixes a substance in a gaseous state with liquid and solid a mixture of the same substances in any of the above-mentioned substances is ejected toward the deposit; and a circular tubular suction portion attracts the discharged mixture and the deposits discharged from the mixture; the circular tubular suction portion is coaxial The inside of the circular tubular discharge portion is surrounded by a suction port of the circular tubular suction portion, and is opened in the suction port; and the suction port of the circular tubular suction portion The discharge port of the circular tubular discharge portion protrudes, and the circular tubular discharge portion further includes a sterilization device for performing sterilization of the structure.