JP5010875B2 - Cleaning device and cleaning method - Google Patents

Description

  The present invention relates to a cleaning apparatus and a cleaning method, and more particularly to a cleaning apparatus and a cleaning method for cleaning a narrow space in a semiconductor device manufacturing apparatus.

  Usually, a substrate processing apparatus that performs a predetermined process on a substrate such as a wafer for a semiconductor device includes a processing chamber (hereinafter referred to as a “chamber”) that accommodates the substrate and performs a predetermined process. Deposits resulting from reaction products generated in a predetermined process are deposited in the chamber. When these adhering substances float and become particles, and the particles adhere to the substrate surface, a wiring short circuit occurs in a product manufactured from the substrate, for example, a semiconductor device, and the yield of the semiconductor device is reduced. Therefore, in order to remove deposits in the chamber, maintenance such as wet cleaning in the chamber is performed manually by the operator.

  However, in the components facing the narrow space such as the bellows in the chamber and the exhaust system parts, it is difficult to perform maintenance by the above-described manual operation of the operator. Deposits are deposited on the components facing the narrow space, and particles resulting from the deposited deposits enter the processing space of the substrate and adhere to the surface of the substrate. For example, in a component facing a narrow space near the manifold, the deposits deposited on the component peel off and rebound by the rotor blades of the exhaust pump provided near the manifold. It is considered that the particles adhere to the surface of the substrate by entering the processing space of the substrate (see, for example, Patent Document 1).

Therefore, conventionally, in order to remove the deposits deposited on the components facing the narrow space such as the bellows and exhaust system parts described above, deposits using a commercially available cleaner, for example, a cleaner having only a suction port. Aspiration is taking place.
Japanese Patent Application No. 2006-005344

  However, suction of deposits using the above-mentioned commercially available vacuum cleaner can suck and remove relatively large deposits, but sucks and removes fine deposits, that is, faces a narrow space. It is difficult to clean the components sufficiently. For this reason, by using the substrate processing apparatus for a long time, the fine deposits accumulate on the components facing the narrow space, and as described above, the particles caused by the deposited deposits are deposited on the surface of the substrate. The problem of adhering to the surface occurs.

  In order to deal with the above problems, the components facing the narrow space are maintained by exchanging or disassembling the components facing the narrow space such as bellows and exhaust system parts, but the maintenance is very time consuming. , Labor and cost.

  An object of the present invention is to provide a cleaning apparatus and a cleaning method capable of efficiently and sufficiently cleaning components facing a narrow space.

Cleaning apparatus 請 Motomeko 1 wherein is a cleaning device for cleaning the structure deposits was removed attached to the structure, the ejection tube having an ejection port for ejecting toward the fluid to the deposit , provided coaxially so as to include the jet pipe, the suction tube having a suction port for sucking deposits peeled from the structure by the ejected flow body and the flow body is ejected from the ejection port And a first impeller that is arranged in the ejection pipe and is rotated by a motor, and is arranged coaxially with the first impeller in the suction pipe and independent of the first impeller by another motor. A pump having a second impeller that rotates, and the fluid is the same substance as the gaseous substance in the state of gas or one of a gaseous state, a liquid, and a solid And the first mixture. The inclination angle of each blade of the impeller, characterized in that the inclination angle and the opposite of each blade of the second impeller.

A cleaning device according to a second aspect is the cleaning device according to the first aspect, wherein the ejection pipe has a constricted shape in the vicinity of the ejection port .

Cleaning apparatus according to claim 3, wherein, in the cleaning device according to claim 1 Symbol placement, the fluid is characterized by a gas which has been heated.

Billing cleaning device according to item 4, wherein, in the cleaning device according to claim 1 Symbol placement, the fluid is a gas, the in jet pipe, vibrating means for imparting vibration to said gas is provided by the vibrating means The gas to which vibration is applied is ejected from the ejection port .

The cleaning device according to claim 5, in the cleaning device according to claim 1 Symbol placement, the fluid is a gas containing unipolar ions, an electric field of opposite polarity from that of the unipolar ions pole to said suction port A reverse electric field generating unit for generating is provided .

Cleaning apparatus according to claim 6, wherein, in the cleaning device according to claim 1 Symbol placement, the fluid is a gas, the plasma generation device for generating a plasma of the gas is provided in said spout, generated by the plasma generator The plasma is ejected from the ejection port .

Cleaning apparatus according to claim 7, wherein, in the cleaning device according to claim 1 Symbol placement, brush portion rubbing the deposit is provided at the ejection port, attracting the deposits rubbed by the brush unit from the suction port characterized in that it.

Cleaning apparatus according to claim 8, wherein, in the cleaning device according to claim 1 Symbol placement, the fluid is a gas, and wherein the lamp for irradiating ultraviolet rays to the structure in the jet pipe is provided To do.

A cleaning apparatus according to a ninth aspect is the cleaning apparatus according to any one of the first to eighth aspects, further comprising a monitor for detecting the number of particles passing through the suction pipe .

The cleaning method according to claim 10 is a cleaning method for cleaning the structure by removing the deposits attached to the structure, the jet pipe having a jet port for ejecting fluid toward the deposits. From the spout, as the fluid, a gas or a mixture in which a substance in a gaseous state and the same substance as the gaseous substance in one of a liquid and a solid are mixed is directed toward the deposit. The structure ejected from the ejection port and the fluid ejected from the ejection port by the ejection step from the suction port of the suction pipe provided coaxially so as to contain the ejection tube, and the structure A suction step for sucking the deposits peeled off, and a direction in which the fluid ejected from the ejection port flows in the ejection pipe is opposite to a direction in which the fluid sucked from the suction port flows in the suction pipe Ah In the ejection step and the suction step, a first impeller disposed in the ejection pipe and a first impeller disposed in the suction pipe coaxially with each blade of the first impeller Adjusting the strength of the jet power from the jet port and the suction force from the suction port by independently rotating a second impeller having a blade with a tilt angle opposite to the tilt angle. It is characterized by.

The method of cleaning according to claim 11, wherein, in the cleaning method according to claim 10, as the jet pipe, with those having a constricted shape in the vicinity of the ejection port, the at jetting step, the fluid ejected from said ejection port It is characterized by accelerating by the constricted shape portion .

The method of cleaning 請 Motomeko 12, wherein, in the cleaning method according to claim 10, wherein in jetting step is characterized by ejecting gas heated as the fluid to the deposits.

The method of cleaning according to claim 13, wherein, in the cleaning method of claim 10 Symbol mounting, the gas used as the fluid, provided the vibrating means for imparting vibration to the gas to the jet pipe, in the ejection step, the vibration The gas imparted with vibration by the imparting means is ejected from the ejection port .

The method of cleaning according to claim 14, wherein, in the cleaning method of claim 10 Symbol mounting, said fluid is a gas containing unipolar ions, an electric field of opposite polarity from that of the unipolar ions pole to said suction port A reverse electric field generation unit is provided, and the electric field is generated by the reverse electric field generation unit in the suction step .

The method of cleaning according to claim 15, wherein, in the cleaning method of claim 10 Symbol mounting, the gas used as the fluid, provided the plasma generator for generating plasma of the gas in the ejection port, at the ejection step, the plasma The plasma generated by the generator is ejected .

The method of cleaning according to claim 16, wherein, in the cleaning method of claim 10 Symbol mounting, the brush portion rubbing the deposits on the jet port is provided, and in the injection step, rubbing the deposits by the brush portion, the suction The step is characterized in that the adhering matter rubbed by the brush portion and peeled off from the structure is further sucked .

The method of cleaning according to claim 17, wherein, in the cleaning method of claim 10 Symbol mounting, said fluid is a gas, the lamp for irradiating ultraviolet rays to the structure in the jet pipe is provided, in the injection step, the The structure is characterized by irradiating the structure with ultraviolet rays .

The cleaning method according to claim 18 is the cleaning method according to any one of claims 10 to 17, wherein a monitor for detecting the number of particles passing through the suction pipe is provided, and in the suction step, the monitor The end point of the cleaning process is detected by detecting the number of particles passing through the suction pipe .

According to claim 1 a method for cleaning the cleaning device and claim 10 wherein the wherein the viscous force of the flow body deposits the flow body is ejected, be detached from the structure by physical impact, and entrainment, etc. can be, can be sucked deposits peeled from the structure body, have been, by suction alone can remove fine deposits that could not be removed. As a result, it is possible to sufficiently clean the components facing the narrow space in the substrate processing apparatus, and it is possible to prevent the yield of semiconductor devices to be finally manufactured from being lowered.

Further, according to claim 1 a method of cleaning the cleaning device and claim 10 wherein the wherein the suction tube since encloses the jet pipe, the flow body is ejected from the ejection port, and the mixture is ejected The deposit can be reliably sucked at the suction port, and the structure of the cleaning device can be simplified.

According to the method of cleaning according to claim 1 cleaning device and claim 10, wherein the description, it is possible to accelerate the fluid, also the strength of the suction force of the fluid by jetting force and the suction pipe of the fluid to be ejected from the ejection tube It can be adjusted arbitrarily and in addition the pump can be made compact.

According to claim 2 the method of cleaning the cleaning device and according to claim 11, wherein the gas injection delivering pipes is ejected can be accelerated in the ejection opening neighborhood. As a result, a part of the gas can be aerosolized in the vicinity of the ejection port, and a shock wave can be formed by the acceleration of the gas .

According to claim 3 a method of cleaning the cleaning device and claim 12, wherein the description, because it is possible to peel from the structure due to thermal stress or the like of the heated gas, is et to efficiently fine deposits Can be removed.

According to claim 4 a method of cleaning the cleaning device and claim 13, wherein the description, since it is possible to peel from the structure by vigorous physical collision of molecular gas which vibration is imparted, and La Fine deposits can be efficiently removed.

According to claim 5 the method of cleaning the cleaning device and claim 14 wherein the wherein the deposit unipolar ions are ejected can be charged to a single-pole by the unipolar ions, the single pole in intake引口An electric field opposite to the pole of the ion is generated, and the ejected unipolar ions and the adhered matter from which the unipolar ions are ejected are attracted. As a result, it is possible to peel from the structure and to suck the peeled off deposit, and thus it is possible to more efficiently remove the fine deposit.

According to claim 6 a method of cleaning the cleaning device and claim 15 according can be detached from the structure by chemical reaction of radicals in the flop plasma issued injection. And since the said ejected plasma and the deposit | attachment which the said plasma was ejected are attracted | sucked, the deposit | attachment peeled from the said structure can be attracted | sucked, and it can remove a fine deposit further efficiently. Can do.

According to claim 7 a method for cleaning the cleaning device and claim 16 according Because rub the deposits adhered to the structure, since it is possible to peel the該付deposits from the structure, the securely deposit Can be removed.

According to the cleaning apparatus according to claim 8 and the cleaning method according to claim 17 , since the structure can be sterilized by ultraviolet rays , generation of contaminants due to bacterial growth in the substrate processing apparatus can be prevented. .

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, a description will be given of a substrate processing apparatus to which a cleaning apparatus according to an embodiment of the present invention is applied.

  FIG. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a cleaning apparatus according to an embodiment of the present invention is applied.

  In FIG. 1, a substrate processing apparatus 10 configured as an etching processing apparatus that performs plasma processing, for example, reactive ion etching processing, on a semiconductor device wafer W (hereinafter simply referred to as “wafer W”). Includes a chamber 11 as a processing chamber made of metal, for example, aluminum or stainless steel.

  A wafer W having a diameter of, for example, 300 mm is placed in the chamber 11, and the lower electrode 12 serving as a mounting table that moves up and down with the placed wafer W is opposed to the lower electrode 12. A shower head 13 that is disposed on the ceiling of the chamber 11 and supplies processing gas to be described later is disposed in the chamber 11.

  A lower high frequency power supply 14 is connected to the lower electrode 12 via a lower matching unit 15, and the lower high frequency power supply 14 supplies predetermined high frequency power to the lower electrode 12. Further, the lower matching unit 15 reduces the reflection of the high frequency power from the lower electrode 12 to maximize the incidence efficiency of the high frequency power on the lower electrode 12.

  An ESC 16 for adsorbing the wafer W with electrostatic attraction is disposed above the lower electrode 12. The ESC 16 incorporates an ESC electrode plate 17 formed by laminating electrode films, and a DC power source 18 is electrically connected to the ESC electrode plate 17. The ESC 16 adsorbs and holds the wafer W on its upper surface by a Coulomb force or a Johnson-Rahbek force generated by a DC voltage applied from the DC power source 18 to the ESC electrode plate 17. Further, an annular focus ring 20 made of silicon (Si) or the like is disposed on the periphery of the ESC 16, and the focus ring 20 converges the plasma generated above the lower electrode 12 toward the wafer W.

  Below the lower electrode 12, a support body 23 extending downward from the lower portion of the lower electrode 12 is disposed. The support 23 supports the lower electrode 12 and moves the lower electrode 12 up and down by rotating a ball screw (not shown). Further, the support 23 is covered with a bellows 40 and is shielded from the atmosphere in the chamber 11. The bellows 40 (structure) is covered with bellows covers 24 and 25, and a very narrow narrow space is formed in the vicinity of the bellows 40.

  On the side wall of the chamber 11, a carry-in / out port 26 for the wafer W and an exhaust unit 27 (structure) are provided. The wafer W is transferred into and out of the chamber 11 via the transfer port 26 by a transfer arm (not shown) provided in an LLM (load lock module) (not shown) arranged adjacent to the substrate processing apparatus 10. The exhaust unit 27 is connected to an exhaust system including an exhaust manifold, an APC (Automatic Pressure Control) valve, a DP (Dry Pump), a TMP (Turbo Molecular Pump), etc. (all not shown), and the air inside the chamber 11 is externally connected. To discharge. In addition, a very narrow narrow space is also formed in the vicinity of the exhaust part 27.

  In the substrate processing apparatus 10, when the wafer W is loaded into the chamber 11, the lower electrode 12 is lowered to the same height as the loading / unloading port 26, and when the wafer W is subjected to plasma processing, the lower electrode 12 is moved to the wafer W. Ascend to the processing position. FIG. 1 shows the positional relationship between the loading / unloading port 26 and the lower electrode 12 when the wafer W is loaded into the chamber 11.

  The shower head 13 is disposed above the upper electrode 29 and a disk-shaped upper electrode (CEL) 29 having a large number of gas vent holes 28 facing the processing space S, which is a space above the lower electrode 12. And an electrode support 30 that detachably supports the upper electrode 29. In addition, the surface corresponding to the outer peripheral portion of the surface facing the processing space S of the upper electrode 29 is covered by the inner peripheral portion of the shield ring 35 that is an annular member disposed on the ceiling portion in the chamber 11. The shield ring 35 is made of, for example, quartz and protects a screw screw (not shown) that fastens the upper electrode 29 disposed on the outer peripheral portion of the upper electrode 29 to the ceiling portion of the chamber 11 from plasma.

  An upper high frequency power supply 31 is connected to the upper electrode 29 via an upper matching unit 32, and the upper high frequency power supply 31 supplies predetermined high frequency power to the upper electrode 29. Further, the upper matching unit 32 reduces the reflection of the high frequency power from the upper electrode 29 and maximizes the incidence efficiency of the high frequency power on the upper electrode 29.

A buffer chamber 33 is provided inside the electrode support 30, and a processing gas introduction pipe (not shown) is connected to the buffer chamber 33. In the buffer chamber 33, for example, a processing gas made of oxygen gas (O ₂ ), argon gas (Ar), and carbon tetrafluoride (CF ₄ ) alone or in combination is introduced from a processing gas introduction pipe. The processed gas is supplied to the processing space S through the gas vent hole 28.

  In the chamber 11 of the substrate processing apparatus 10, as described above, high-frequency power is applied to the lower electrode 12 and the upper electrode 29, and high-density plasma is generated from the processing gas in the processing space S by the applied high-frequency power. Then, plasma composed of ions, radicals, etc. is generated. The generated plasma is focused on the surface of the wafer W by the focus ring 19, and the surface of the wafer W is physically or chemically etched.

  In the chamber 11 of the substrate processing apparatus 10, a reaction product or the like is generated during the etching, and the reaction product adheres to each component in the chamber 11, for example, the bellows 40 or the exhaust unit 27. .

  Next, the cleaning apparatus according to the embodiment of the present invention will be described. The cleaning apparatus according to the present embodiment is applied particularly to cleaning of components facing the narrow space in the substrate processing apparatus described above.

  FIG. 2A is a schematic diagram showing a schematic configuration of the cleaning apparatus according to the embodiment of the present invention. In FIG. 2A, the right side in the drawing is referred to as “right side” and the left side in FIG. FIG. 2B is a diagram showing a schematic configuration of the impeller of the pump in FIG.

  In FIG. 2A, a cleaning device 100 includes a main body 120 surrounded by a casing (not shown), and a suction pipe described later that extends from the main body 120 through the casing and bends to the right. 112 and a double pipe nozzle 110 constituted by a jet pipe 114 and a jet pipe 114 inside the main body 120, and a predetermined gas (described later) supplied from a gas supply device (not shown) is supplied to the jet pipe 114. A gas supply pipe 140, a gas exhaust pipe 150 connected to the suction pipe 112 inside the main body 120 and exhausting the suction gas in the suction pipe 112 to the outside, and disposed in the middle of the gas exhaust pipe 150 and outside the main body 120 A detoxification device 130.

  Further, in the main body 120, the double pipe nozzle 110 is provided with a pump 124, a particle removal filter 122, and a particle monitor 121 shown in FIG. Further, in the double tube nozzle 110, on the left side of the pump 124, the ejection tube 114 penetrates the side surface of the suction tube 112 and branches from the suction tube 112, and the ejection tube 114 and the suction tube 112 are independent from each other. It becomes the piping of.

  As shown in FIG. 2B, the pump 124 has a central shaft 127 at the center, and the central shaft 127 is shown in the figure by a rotational driving force from a motor (not shown) connected to the central shaft 127. Rotates counterclockwise. The central shaft 127 is provided with a plurality of blades 126a extending radially outward from the central shaft 127 at equiangular intervals. The central shaft 127 and the plurality of blades 126a are connected to the ejection impeller 124a. The ejection impeller 124 a is interposed in the ejection pipe 114 in the double pipe nozzle 110. Each blade 126a is provided with an inclination angle for allowing the gas in the ejection pipe 114 to flow from the left side to the right side in FIG. 2 (A) by rotating counterclockwise.

  In addition, the pump 124 has an annular shaft 128 that is arranged to join the radially outer end of each blade 126a and surround each blade 126a. The annular shaft 128 is provided with a plurality of blades 125a extending radially outward from the annular shaft 128 at equiangular intervals. The annular shaft 128 and the plurality of blades 125a are connected to the suction impeller 124b. The suction impeller 124b is interposed in the suction pipe 112 of the double pipe nozzle 110. The blade 125a is rotated counterclockwise to cause the gas in the suction pipe 112 to flow from the right side to the left side in FIG. 2 (A), which is opposite to the inclination angle provided in the blade 126a. Is provided.

  Thus, the pump 124 can simultaneously eject the gas to the ejection pipe 114 and suck the gas by the suction pipe 112. Further, in the pump 124, the suction impeller 124b and the ejection impeller 124a are coaxially arranged, so that the pump 124 can be made compact.

  In the present embodiment, the annular shaft 128 is connected to a motor (not shown) different from the motor connected to the central shaft without being joined to the inner blades 126a, and the rotational driving force from each motor. By adjusting each of these, the inner blade 126a and the outer blade 125a can be arbitrarily rotated. Thereby, the jet power of the gas jetted from the jet pipe 114 and the strength of the gas suction force by the suction pipe 112 can be arbitrarily adjusted.

  The particle removal filter 122 removes particles in the suction gas in the suction pipe 112. The particle monitor 121 monitors the amount of particles in the suction gas in the suction pipe 112 using, for example, a laser light scattering method. By monitoring the amount of particles in the suction gas, the end point of a cleaning process described later can be detected. The abatement apparatus 130 has activated carbon or the like inside, and adsorbs organic substances and harmful substances contained in the suction gas by the activated carbon.

  3A is an enlarged cross-sectional view showing a schematic configuration of the tip of the double tube nozzle 110 in FIG. 2A, and FIG. 3B is a schematic of the tip of the double tube nozzle 110. It is a perspective view which shows a structure. FIG. 3A is a diagram illustrating a case where the particles P adhering to the surface of the structure 50 are cleaned using the double tube nozzle 110. In addition, although the bellows 40 and the exhaust part 27 correspond as a structure (component) facing the narrow space, here, for convenience of explanation, a generalized structure 50 will be used for explanation.

  In FIG. 3A, the double tube nozzle 110 has a jet pipe 114 and a suction pipe 112 surrounding the jet pipe 114, and the jet outlet 114 a of the jet pipe 114 is located in the suction port 112 a of the suction pipe 112. Open. The jet pipe 114 has a constricted portion 114b in the vicinity of the jet port 114a, and a predetermined gas supplied by the gas supply pipe 140 and accelerated to a predetermined flow rate by the pump 124 is further accelerated in the constricted portion 114b. . As a result, the pressure of the gas in the ejection pipe 114 at the constricted portion 114b rapidly decreases, and a part of the gas is solidified by adiabatic expansion of the gas, and a part of the gas is aerosolized. The gas forms a shock wave by acceleration. As a result, the ejection pipe 114 ejects a shock wave including an aerosol made of the same material as the gas toward the particles P attached to the surface of the structure 50.

  In the present embodiment, in order to eject a gas containing aerosol from the ejection pipe 114, the gas supply device (not shown) supplies a gas containing a component that is easily aerosolized. In addition, since cleaning device 100 according to the present embodiment is mainly used under atmospheric pressure and room temperature, the gas ejected from ejection pipe 114 is a gas or a liquid under atmospheric pressure and room temperature, and It is preferable that the gas has a strong sublimation and volatility with a narrow temperature interval between the melting point and the boiling point. The gas supplied from the gas supply device into the ejection pipe 114 is, for example, nitrogen, argon, carbon dioxide, water, or ethanol.

In addition, it has been confirmed by the present inventor using a numerical simulation or the like that the speed of the gas ejected from the ejection pipe 114 in an environment where there is no flow outside is maximum within a range of about 20 mm from the ejection port 114a. and the distance _{L 2} from the jet port 114a to the structure 50 is preferably set to 20mm or less. Furthermore, since the gas ejected from the ejection pipe 114 may contain harmful substances, the distance L ₁ from the suction port 112a to the structure 50 is 10 mm or less in order to reduce the amount of gas released into the external atmosphere. It is good to set to. Therefore, it is preferable that the tip of the double tube nozzle 110 has a shape in which the suction port 112a of the suction tube 112 protrudes from the ejection port 114a of the ejection tube 114 by about 10 mm.

  Hereinafter, a cleaning process using the cleaning apparatus according to the embodiment of the present invention will be described.

  FIG. 4 is a process diagram showing a cleaning process using the cleaning apparatus according to the embodiment of the present invention.

  In FIG. 4, first, a shock wave including gas and aerosol A composed of the same substance as the gas is ejected from the outlet 114 a of the ejection pipe 114 in the double pipe nozzle 110 toward the particle P attached to the surface of the structure 50. (FIG. 4A).

  Next, the particles P adhering to the surface of the structure 50 are separated from the surface of the structure 50 by the viscous force of the gas, the physical impact of the gas, the physical impact of the aerosol A, and the entrainment of the aerosol A. (FIG. 4B).

  Then, the particles P separated from the surface of the structure 50 are sucked into the suction pipe 112 from the suction port 112a, supplied to the gas exhaust pipe 150, and exhausted to the outside (FIG. 4C).

  According to the cleaning process of FIG. 4, a shock wave containing aerosol A made of the same material as the gas and the gas is ejected from the ejection port 114a toward the particle P, and the particles are separated by the viscous force of the gas, Since suction is performed from the suction port 112a, fine particles P (adhered matter) that cannot be removed only by suction can be removed. As a result, the components facing the narrow space in the substrate processing apparatus 10 can be sufficiently cleaned, thereby preventing the yield of semiconductor devices to be finally manufactured from being lowered.

  In addition, since an aerosol made of the same substance as the gas is generated, it is not necessary to mix another substance that is particularly easy to solidify into the gas, the handling of the gas is facilitated, and the configuration of the gas supply device is simplified. Can do.

  Next, a cleaning process using a modification of the cleaning apparatus according to the embodiment of the present invention will be described. Each of the modifications of the cleaning device listed below is preferably configured by adding the following configuration to the configuration having the ejection tube 114 inside the suction tube 112 described above.

  FIGS. 5A and 5B are process diagrams showing a cleaning process using a first modification of the cleaning apparatus according to the embodiment of the present invention.

  First, the heated gas heated by the heating unit 141 disposed in the middle of the gas supply pipe 140 is ejected from the jet outlet 214a of the heated gas jet pipe 214 in the nozzle 210 toward the particles P attached to the surface of the structure 50. (FIG. 5A).

  Next, the particles P from which the heated gas is ejected are peeled off from the surface of the structure 50 due to the thermal stress of the gas, and are sucked into the suction pipe 112 from the suction port 112a and exhausted to the outside (FIG. 5B). ).

  5A and 5B, the heated gas is ejected to the particles P from the ejection port 214a, and the particles P are peeled off by the thermal stress of the gas and sucked from the suction port 112a. Therefore, the fine particles P can be removed more efficiently.

  FIG. 5C and FIG. 5D are process diagrams showing a cleaning process using a second modification of the cleaning apparatus according to the embodiment of the present invention.

  First, vibration is imparted to the gas by the ultrasonic generator 315 disposed in the nozzle 310 at the ejection port 314 a of the vibration imparting gas ejection pipe 314, and adheres to the surface of the structure 50 from the ejection outlet 314 a of the vibration imparting gas ejection pipe 314. The vibration imparting gas is jetted toward the particles P (FIG. 5C).

  Next, the particle P from which the vibration imparting gas is ejected is separated from the surface of the structure 50 due to intense physical collision of molecules in the vibration imparting gas resulting from the vibration imparted to the gas, and the suction port 112a. Is sucked into the suction pipe 112 and exhausted to the outside (FIG. 5D).

  According to the cleaning process of FIGS. 5C and 5D, the vibration imparting gas is ejected from the ejection port 314a to the particles P, and the particles are peeled off due to intense physical collision of molecules, and the like. Since the suction is performed, the fine particles P can be more efficiently removed.

  FIGS. 6A and 6B are process diagrams showing a cleaning process using the third modification of the cleaning apparatus according to the embodiment of the present invention.

  First, the unipolar ions I supplied from the unipolar ion supply pipe 142 are ejected toward the particles P attached to the surface of the structure 50 from the outlet 414a of the unipolar ion ejection pipe 414 in the nozzle 410 (FIG. 6 ( A)).

  Next, the particles P from which the monopolar ions I are ejected are charged monopolarly by the monopolar ions I and are generated by the electrode plate 415 (reverse electric field generating portion) provided near the suction port 112a in the suction tube 112. The unipolar ions I are peeled off from the surface of the structure 50 by the attractive force from the electric field having the opposite polarity to the unipolar ions I, and are sucked into the suction pipe 112 from the suction port 112a and exhausted to the outside (FIG. 6B).

  6A and 6B, the unipolar ions I are ejected to the particles P from the ejection port 414a, the particles P are charged by the unipolar ions I, and the unipolar ions I Since the particles P are peeled off by the attractive force from the electric field of the opposite polarity and sucked from the suction port 112a, the fine particles P can be removed more efficiently.

  In this process, it is conceivable that the particles P adhere to the electrode plate 415 provided near the suction port 112a in the suction tube 112 and the attractive force of the electrode plate 415 decreases. The attachment of the particles P can be prevented by connecting a heater or the like.

  6C and 6D are process diagrams showing a cleaning process using the fourth modification of the cleaning apparatus according to the embodiment of the present invention.

  First, plasma is generated from an outlet 514a of the radical jet pipe 514 in the nozzle 510 via the atmospheric plasma generator 515, and the plasma, particularly radicals in the plasma, are directed toward the particles P attached to the surface of the structure 50. It ejects (FIG. 6C).

  Next, the particles P from which radicals are ejected are separated from the surface of the structure 50 by a chemical reaction with the radicals, sucked into the suction pipe 112 from the suction port 112a, and exhausted to the outside (FIG. 6D). ).

  6C and 6D, plasma is generated from the jet outlet 514a via the atmospheric plasma generator 515, radicals in the plasma are jetted onto the particles P, and the chemistry of the radicals is obtained. Since the particles P are peeled off by a chemical reaction and sucked from the suction port 112a, the fine particles P can be removed more efficiently.

  FIG. 7A is an enlarged cross-sectional view showing a schematic configuration of a main part of a fifth modified example of the cleaning apparatus according to the embodiment of the present invention.

  In FIG. 7A, the nozzle 610 includes a jet pipe 614 and a suction pipe 112 surrounding the jet pipe 614. The ejection pipe 614 has a rotating brush 615 at its ejection opening 614a, and the ejection pipe 614 presses against the particles P adhering to the structure 50 while rotating the rotating brush 615, and gas is directed toward the particles P. Erupts. Thereby, since gas can be ejected while scrubbing off the particles P, the particles P can be reliably peeled off, and the particles P can be reliably removed.

  FIG. 7B is an enlarged cross-sectional view showing a schematic configuration of a main part of a sixth modified example of the cleaning apparatus according to the embodiment of the present invention.

  In FIG. 7B, the nozzle 710 includes a jet pipe 714 and a suction pipe 112 surrounding the jet pipe 714. The ejection pipe 714 has a low-pressure mercury lamp 715 in the vicinity of the ejection outlet 714a. The ejection pipe 714 irradiates the structure 50 with ultraviolet rays having a wavelength of about 254 nm from the low-pressure mercury lamp 715 and emits gas toward the particles P. Erupts. As a result, the particles P can be removed and the structure 50 can be sterilized, so that generation of contaminants due to the growth of bacteria attached to the structure 50 can be prevented.

  FIG. 8A is a perspective view showing a schematic configuration of a main part of a seventh modified example of the cleaning apparatus according to the embodiment of the present invention.

  In FIG. 8 (A), the double tube nozzle 810 has an ejection pipe 814 having a flat shape, and a suction pipe 812 having a flat shape similar to the ejection pipe 814 and surrounding the ejection pipe 814, The ejection port 814 a of the ejection pipe 814 opens in the suction port 812 a of the suction pipe 812. Thereby, each cleaning process mentioned above can be performed and the fine particle P can be removed. In addition, since the double tube nozzle 810 is constituted by the ejection tube 814 and the suction tube 812 having a flat shape, the double tube nozzle 810 has a shape suitable for scraping, and the structure is scraped and washed at the tip of the double tube nozzle. be able to.

  FIG. 8B is an enlarged cross-sectional view showing a schematic configuration of a main part of an eighth modification of the cleaning apparatus according to the embodiment of the present invention.

  As shown in FIG. 8 (B), a structure in which the suction port 912a of the suction tube 912 is disposed close to the jet port 914a of the ejection tube 914 without forming the ejection tube 914 and the suction tube 912 in a double tube structure. It is good. Also in this modification, it is possible to remove the fine deposits by executing the above-described cleaning processes. Further, in this modification, since the degree of freedom of arrangement of the ejection pipe 914 and the suction pipe 912 is high, the fine particles P adhering to the structure facing the smaller narrow space can be efficiently and sufficiently removed.

  In the embodiment described above, the case where the substrate processing apparatus to which the present invention is applied is an etching processing apparatus as a semiconductor device manufacturing apparatus has been described. However, the substrate processing apparatus to which the present invention is applicable is not limited to this, and other It may be a semiconductor device manufacturing apparatus using the plasma, for example, a film forming apparatus using CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), or the like. Furthermore, an ion implantation processing device, a vacuum transfer device, a heat treatment device, an analysis device, an electron accelerator, an FPD (Flat Panel Display) manufacturing device, a solar cell manufacturing device, an etching processing device as a physical quantity analysis device, a film forming processing device, etc. The present invention is applicable to any substrate processing apparatus having a narrow space.

  Furthermore, the present invention is not limited to being applied to a substrate processing apparatus, but can also be applied to a cleaning apparatus for medical instruments.

It is sectional drawing which shows schematic structure of the substrate processing apparatus with which the cleaning apparatus which concerns on embodiment of this invention is applied. (A) is a schematic diagram which shows schematic structure of the washing | cleaning apparatus which concerns on embodiment of this invention, (B) is a figure which shows schematic structure of the impeller of the pump in FIG. 2 (A). (A) is an expanded sectional view which shows schematic structure of the front-end | tip part in the double tube nozzle in FIG. 2 (A), (B) shows schematic structure of the jet nozzle and suction port in the double tube nozzle. It is a perspective view. It is process drawing which shows the washing | cleaning process using the washing | cleaning apparatus which concerns on embodiment of this invention. (A) And (B) is process drawing which shows the washing | cleaning process using the 1st modification of the washing | cleaning apparatus based on embodiment of this invention, (C) and (D) are implementation of this invention. It is process drawing which shows the cleaning process using the 2nd modification of the washing | cleaning apparatus which concerns on a form. (A) And (B) is a flowchart showing washing processing using the 3rd modification of a washing device concerning an embodiment of the invention, (C) and (D) are implementation of the present invention. It is process drawing which shows the washing process using the 4th modification of the washing | cleaning apparatus which concerns on a form. (A) is an expanded sectional view which shows schematic structure of the principal part of the 5th modification of the washing | cleaning apparatus which concerns on embodiment of this invention, (B) is the washing | cleaning apparatus which concerns on embodiment of this invention It is an expanded sectional view showing the schematic structure of the principal part of the 6th modification of. (A) is a perspective view which shows schematic structure of the principal part of the 7th modification of the washing | cleaning apparatus which concerns on embodiment of this invention, (B) is the washing | cleaning apparatus which concerns on embodiment of this invention It is an expanded sectional view showing the schematic structure of the principal part of the 8th modification.

Explanation of symbols

S Processing space W Wafer A Aerosol I Monopolar ion P Particle 10 Substrate processing device 27 Exhaust port 40 Bellows 50 Structure 100 Cleaning device 110 Double tube nozzle 112 Suction tube 114 Ejection tube 124 Pump 124a Ejection impeller 124b Suction impeller

Claims (18)

A cleaning apparatus for cleaning the structure to remove material adhering to the structure,
An ejection pipe having an ejection port for ejecting fluid toward the deposit;
A suction tube having a suction port for sucking the provided coaxially so as to include the jet pipe, deposits were detached from the structure by the flow body and the flow body ejected is ejected from said ejection port ,
A first impeller disposed in the ejection pipe and rotated by a motor; and a first impeller disposed coaxially with the first impeller in the suction pipe; and independent of the first impeller by another motor. and a pump having a second impeller, a rotating,
The fluid is a mixture of gas or a substance in the gaseous state and the same substance as the substance in the gaseous state in any one state of liquid and solid,
The cleaning apparatus according to claim 1, wherein an inclination angle of each blade of the first impeller is opposite to an inclination angle of each blade of the second impeller . Before Ki噴 out tube, in the vicinity of the spout, constriction claim 1 Symbol placing the cleaning device, characterized in that it has a shape. Claim 1 Symbol placing the cleaning device, wherein said fluid is a gas that has been heated. The fluid is a gas;
Wherein the jet pipe, the vibration imparting means for imparting vibration to said gas is provided,
Claim 1 Symbol placing the cleaning device, characterized in that the gas oscillations are imparted is ejected from the ejection port by the vibrating means. The fluid is a gas containing monopolar ions,
Claim 1 Symbol placing the cleaning device, characterized in that the reverse electric field generator for generating an electric field of opposite polarity is provided between the suction port of the monopolar ion-pole. The fluid is a gas;
A plasma generator for generating the gaseous plasma at the jet outlet ;
The plasma generation plasma generated by the device is characterized in that it is ejected from the ejection port claim 1 Symbol placement of the cleaning apparatus. A brush part for rubbing the deposit on the jet outlet is provided ,
Claim 1 Symbol placing the cleaning device, characterized in that attracting the deposits rubbed by the brush unit from the suction port. The fluid is a gas;
Claim 1 Symbol placing the cleaning device, characterized in that the lamp for irradiating ultraviolet light is provided on the jet pipe with respect to the structure. The cleaning apparatus according to claim 1, further comprising a monitor that detects the number of particles passing through the suction pipe. A cleaning method for cleaning the structure by removing the deposit attached to the structure,
From the jet outlet of the jet pipe having a jet outlet for jetting the fluid toward the deposit, the fluid is a gas or a substance in a gaseous state in a gas state, a liquid state or a solid state. And a jetting step for jetting a mixture containing the same substance toward the deposit,
From the suction port of the suction tube provided coaxially so as to contain the ejection tube, the fluid ejected from the ejection port by the ejection step and the deposit separated from the structure due to the ejection of the fluid It has a suction step for sucking,
The direction in which the fluid ejected from the ejection port flows in the ejection pipe is opposite to the direction in which the fluid sucked from the suction port flows in the suction pipe,
In the ejection step and the suction step, the first impeller disposed in the ejection pipe, and the first impeller disposed coaxially with the first impeller in the suction pipe, the inclination of each blade of the first impeller Adjusting the strength of the jet power from the jet port and the suction force from the suction port by independently rotating the second impeller having a blade having an inclination angle opposite to the angle. A characteristic cleaning method. 11. The cleaning according to claim 10, wherein a pipe having a constriction shape in the vicinity of the jet outlet is used as the jet pipe, and in the jet step, the fluid jetted from the jet outlet is accelerated by the neck shape portion. Method. The ejected at step method of cleaning according to claim 10, wherein the benzalkonium to eject heated gas as the fluid to the deposits. Gas is used as the fluid,
A vibration applying means for applying vibration to the gas is provided in the ejection pipe,
Wherein in jetting The method of cleaning according to claim 10, wherein the benzalkonium be jetting a gas vibration is imparted by the vibrating means from the spout. The fluid is a gas containing monopolar ions ,
The reverse electric field generator for generating an electric field of opposite polarity provided with poles of the suction port said unipolar ions, the suction step is characterized and Turkey to generate the electric field by the reverse electric field generator The cleaning method according to claim 10 . Gas is used as the fluid,
A plasma generator for generating the gaseous plasma at the jet outlet is provided,
Wherein in the injection step, cleaning method according to claim 10, wherein that output injection the plasma generated by the plasma generator. A brush part for rubbing the deposit on the jet outlet is provided,
In the injection step, Ri rubbing the deposits by the brush portion,
The suction step, the cleaning method according to claim 10, wherein the further sucking the biasing kimono peeled from the structure rubbed by the brush unit. Gas is used as the fluid,
A lamp for irradiating the structure with ultraviolet rays is provided in the ejection pipe,
The cleaning method according to claim 10 , wherein in the spraying step, the structure is irradiated with ultraviolet rays from the lamp . A monitor for detecting the number of particles passing through the suction pipe;
The cleaning method according to any one of claims 10 to 17, wherein, in the suction step, an end point of the cleaning process is detected by detecting the number of particles passing through the suction pipe by the monitor. .

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