JP2009117231A - Manufacturing method of organic el display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To carry out cleaning in-line with a cleaning vapor deposition device of a vapor deposition mask and increase the number of usages of the vapor deposition mask in a vapor deposition process of an organic EL display device. <P>SOLUTION: The mask 210 which has completed vapor deposition is moved to a cleaning preparation chamber 201 and then, moved to a cleaning chamber 202 being in an atmospheric pressure. Laser is irradiated on the mask in the cleaning chamber 202 and the deposition adhered on the mask 210 is exfoliated by impulse wave generated by this. The exfoliated deposition is removed by a cleaner 208. Thereafter, the mask 210 is moved to a flushing chamber 203 and the exfoliated matter which is not completely removed in the cleaning chamber 202 is removed from the mask 210. Then, the mask 210 is moved to a mask discharge chamber 204, and the next vapor deposition is carried out. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an organic EL display device, and more particularly to a technique for increasing the number of times a vapor deposition mask is used for forming an organic EL layer by vapor deposition.

  The demand for liquid crystal display devices, organic EL display devices, and the like is increasing as flat displays for monitors, TVs, and the like because the screen is flat and thin. Since the organic EL display device is self-luminous, it has excellent viewing angle characteristics and is expected to have various application fields as a display due to the feature that a backlight is unnecessary.

  In an organic EL display device, a pixel is composed of an organic EL layer composed of a plurality of layers that emit light and a TFT that drives the organic EL layer, and a display region is formed by arranging the pixels on a matrix. Yes. In the pixel portion, the organic EL layer that generates light is formed on a planarizing film on a layer where a thin film transistor (TFT) or the like is formed, or on a planarized film on a layer where a TFT is not formed. It is formed by vapor deposition.

  This vapor deposition is performed using a vapor deposition mask for each color. In addition to having to deposit an organic layer for each color, it is necessary to use a different deposition mask for each color or use one deposition mask while shifting it. In the organic EL display device, since the pixel definition is high, the hole (opening) of the vapor deposition mask becomes very small, and the diameter of the hole changes as vapor deposition is performed, so the vapor deposition mask is periodically cleaned or replaced. There is a need to.

  In the organic EL display device, the other layer formed by the vapor deposition process includes an upper electrode formed on the organic EL layer, particularly an auxiliary formed on the upper electrode in the top emission type organic EL display device. There are electrodes.

  As described above, in the manufacturing process of the organic EL display device, there are many vapor deposition processes, and the mask used for vapor deposition needs to be periodically cleaned or replaced. As a technique for cleaning the vapor deposition mask in the manufacturing apparatus of the organic EL display panel, there is a method of evaporating or sublimating a substance deposited on the vapor deposition mask.

  As a method for evaporating or sublimating a substance deposited on a vapor deposition mask, “Patent Document 1” describes a method for removing deposits by irradiating one of infrared rays, visible light, and ultraviolet rays. “Patent Document 2” describes a technique for sublimating a deposit by irradiating a focused energy beam (laser). “Patent Document 3” describes a technique for removing deposits by irradiation with an ion beam. “Patent Document 4” describes a technique for removing deposits using plasma. “Patent Document 5” describes a technique for removing a deposit by heating a mask.

  As a method for cleaning the vapor deposition mask, wet cleaning using a hydrocarbon solvent and a fluorinated (or IPA) rinse agent (ultrasonic cleaning may be used in combination) and drying means (hot air or vapor drying) are used. . As a description of such a technique, "Patent Document 6" can be cited.

  Further, “Patent Document 7” describes a technique for removing deposits attached to a vapor deposition mask by irradiating an energy beam that induces vibration to the vapor deposition mask to which the deposits adhere.

JP 2002-60926 A JP 2004-103512 A Japanese Patent Laid-Open No. 2006-131984 JP 2000-328229 A JP 2000-282219 A JP 2006-1000026 A JP 2006-169573 A

  As a method for evaporating or sublimating a substance deposited on a vapor deposition mask, any of the techniques described in “Patent Document 1” to “Patent Document 5” needs to raise the temperature of the mask. However, the vapor deposition mask is thin, mechanically weak, and has been subjected to precise processing, so that there is a problem that the mask is deformed when heat is applied.

  In the method of cleaning a mask described in “Patent Document 6” and the like, it is not always possible to remove all deposits attached to the mask. That is, the organic EL material may not be dissolved in a specific solvent. Further, when cleaning is performed using an acid, the mask base material may be damaged.

  In the technique described in “Patent Document 7”, deposits on the mask can be removed without increasing the temperature of the vapor deposition mask, but the deposits are removed as peeled pieces, and the peeled pieces are electrostatically exposed by irradiation with an energy beam. There is a problem in that it adheres to the vapor deposition mask where this occurs.

  The object of the present invention is to solve the above-mentioned problems, and to clean the vapor deposition mask in the production line without contaminating the production line with the peeling pieces, and thus to reduce the frequency of replacing the vapor deposition mask. Is to realize.

  The present invention solves the above-mentioned problems, and returns the mask after vapor deposition to atmospheric pressure, and in this state, a mechanical vibration is generated in the mask by a shock wave generated by irradiating a laser under special conditions. Remove deposits adhering to. The removal of deposits adhering to the mask is performed at atmospheric pressure, and the peeled material is removed as it is by the cleaner. Thereafter, the mask is carried into a vacuum and used for the next vapor deposition, but these steps are performed in-line. Specific means are as follows.

  (1) A method for cleaning a vapor deposition mask, wherein (A) a shock wave is induced in the vapor deposition mask by irradiating a laser beam to either the surface where the deposit of the vapor deposition mask exists or the opposite surface thereof, The vapor deposition mask cleaning characterized in that the step of peeling the deposit by the shock wave and the step (B) of removing the peeling piece of the deposit adhering to the vapor deposition mask irradiated with laser light are performed in-line. Method.

  (2) The vapor deposition mask cleaning according to (1), wherein the step (B) of removing a peeled piece of the deposit adhering to the vapor deposition mask includes an electrostatic removal step of the vapor deposition mask. Method.

  (3) The vapor deposition according to (1), wherein the step (B) of removing the peeled piece of the deposit adhered to the vapor deposition mask removes the peeled piece of the deposit with a peeling sheet. How to clean the mask.

  (4) The deposition mask cleaning method according to (3), wherein the peeling sheet is charged.

  (5) The deposition mask from which the peeling piece has been removed is placed in a predetermined process chamber, and the gas introduction into the process chamber and the vacuum evacuation are performed for at least one cycle or more. Method.

  (6) The deposition mask cleaning method according to any one of (1) to (5), wherein the deposit is an organic film forming an organic EL layer.

  (7) The deposition mask cleaning method according to any one of (1) to (5), wherein the deposit is at least one of IZO, ITO, and ZnO.

  (8) The deposition mask cleaning method according to any one of (1) to (5), wherein the deposit is at least one of Al, Cu, and Cr.

  (9) The cleaning method for a deposition mask according to any one of (1) to (5), wherein the cleaned deposition mask is washed with a liquid.

  (10) The evaporation mask cleaning method according to (9), wherein at least one of alcohol and HFE is used as the liquid.

  (11) The method for cleaning a vapor deposition mask according to (9), wherein in the step of cleaning with the liquid, ultrasonic cleaning is used in combination.

  (12) A method of manufacturing an organic EL display device including a step of depositing an organic EL layer on an element substrate in a matrix using an evaporation mask by moving above or next to an evaporation source, the evaporation mask In the cleaning step (A), a shock wave is induced in the vapor deposition mask by irradiating a laser beam to either the surface on which the deposit of the vapor deposition mask exists or the opposite surface, and the deposit is caused by the shock wave. A method of manufacturing an organic EL display device, wherein the step of peeling and (B) the step of removing the peeling pieces of the deposit attached to the vapor deposition mask irradiated with laser light are performed in-line.

  (13) After vapor deposition is performed on the element substrate using the vapor deposition mask, the steps (A) and (B) are performed until the vapor deposition mask is used for vapor deposition of another element substrate. (9) The method for producing an organic EL display device according to (9).

  (14) An organic EL display device including a step of evaporating an upper electrode using an evaporation mask on an organic EL layer formed in a matrix on an element substrate by moving above or beside an evaporation source In the manufacturing method, in the step of cleaning the vapor deposition mask, (A) a shock wave is induced in the vapor deposition mask by irradiating either the surface on which the deposit of the vapor deposition mask exists or the opposite surface thereof with laser light. And the step of peeling off the deposit by the shock wave and the step (B) of removing the peeling piece of the deposit adhering to the vapor deposition mask irradiated with the laser light are performed in-line. Manufacturing method of display device.

  (15) After vapor deposition is performed on the element substrate using the vapor deposition mask, the steps (A) and (B) are performed until the vapor deposition mask is used for vapor deposition of another element substrate. (14) The method for producing an organic EL display device according to (14).

  (16) The method of manufacturing an organic EL display device according to any one of (12) to (15), wherein electrostatic removal is performed before or after the step (B). Method.

  According to the present invention, removal of deposits adhering to the mask is not removed by abrasion or heating as in conventional laser removal, but by a shock wave caused by local vibration induced by laser irradiation. Therefore, damage to the mask can be suppressed. Therefore, the lifetime of the mask can be extended.

  Since the present invention is a dry process, it can be incorporated into an organic EL layer deposition apparatus for manufacturing an organic EL display device, and in-line mask cleaning is possible. Therefore, the present invention has a great effect on the in-line type vapor deposition apparatus.

  In conventional mask cleaning using a chemical solution, some organic films and masks to which IZO or Al adheres may not be cleaned. In the present invention, since the deposit on the mask is not chemically dissolved but removed by mechanical vibration, there is essentially no deposit that cannot be removed. Thus, the number of substrates that can be formed using a single mask can be increased.

  Since the number of deposition substrates by one mask increases, the number of masks to be used can be reduced. Therefore, the manufacturing cost of the organic EL display device can be reduced.

  Before describing specific examples, the configuration of an organic EL display device to which the manufacturing method of the present invention is applied will be described. The organic EL display device is classified into a bottom emission type in which light emission from the organic EL layer is directed to the element substrate side and a top emission type in which the light emission from the organic EL layer is directed to the opposite side of the element substrate. The top emission type is advantageous in terms of luminance because an organic EL layer that emits light can be formed on a region where a TFT or the like is formed. In the following description, the top emission type will be described as an example, but the bottom emission type is essentially the same.

  FIG. 13 is a cross-sectional view of a top emission type organic EL display device. The top emission type includes a top anode type in which an anode is formed on the organic EL layer 22 and a top cathode type in which a cathode is formed on the organic EL layer 22. Although FIG. 13 shows the case of the top anode type, the present invention can be similarly applied to the case of the top cathode type.

In FIG. 13, a first base film 11 made of SiN and a second base film 12 made of SiO ₂ are formed on the element substrate 10. This is to prevent impurities from the glass substrate from contaminating the semiconductor layer 13. A semiconductor layer 13 is formed on the second base film 12. The semiconductor layer 13 is converted into a poly-Si film by laser irradiation after an a-Si film is formed by CVD.

A gate insulating film 14 made of SiO ₂ is formed so as to cover the semiconductor layer 13. A gate electrode 15 is formed in a portion facing the semiconductor layer 13 with the gate insulating film 14 interposed therebetween. Using the gate electrode 15 as a mask, an impurity such as phosphorus or boron is implanted into the semiconductor layer 13 by ion implantation to impart conductivity, thereby forming a source portion or a drain portion in the semiconductor layer 13.

An interlayer insulating film 16 is formed of SiO ₂ so as to cover the gate electrode 15. This is because the gate wiring formed in the same layer as the gate electrode 15 and the drain wiring 171 are insulated. A drain wiring 171 is formed on the interlayer insulating film 16. The drain wiring 171 is connected to the drain of the semiconductor layer 13 through the interlayer insulating film 16 and the gate insulating film 14 through a through hole.

  Thereafter, an inorganic passivation film 18 made of SiN is deposited to protect the TFT. An organic passivation film 19 is formed on the inorganic passivation film 18. The organic passivation film 19 has a role of protecting the TFT more completely together with the inorganic passivation film 18 and a function of flattening the surface on which the organic EL layer 22 is formed. Therefore, the organic passivation film 19 is formed as thick as 1 to 4 μm.

  A reflective electrode is formed of Al or an Al alloy on the organic passivation film 19. Since Al or Al alloy has a high reflectance, it is suitable as a reflective electrode. The reflective electrode is connected to the drain wiring 171 through a through hole formed in the organic passivation film 19 and the inorganic passivation film 18.

  Since this embodiment is a top anode type organic EL display device, the lower electrode 21 of the organic EL layer 22 serves as a cathode. Therefore, Al or an Al alloy used as the reflective electrode can also serve as the lower electrode 21 of the organic EL layer 22. This is because Al or an Al alloy has a relatively small work function and can function as a cathode.

  An organic EL layer 22 is formed on the lower electrode 21. The organic EL layer 22 is composed of a plurality of layers. In the case of the top anode type, from the lower layer, for example, an electron injection layer, an electron transport layer, a light emitting layer, and a hole transport layer. It becomes a hole injection layer. These organic EL layers are formed by mask vapor deposition. In general, the electron injection layer, the electron transport layer, and the like are vapor-deposited for each color, and the light-emitting layer and the hole transport layer are vapor-deposited for each color.

  An upper electrode 23 serving as a cathode is formed on the organic EL layer 22 by vapor deposition. As the upper electrode 23, IZO (Indium Zinc Oxide) which is a transparent electrode is used. IZO is deposited over the entire display area. The thickness of IZO is formed to be about 30 nm in order to maintain the light transmittance. As the upper electrode, ITO (Indium Tin Oxide), which is a metal oxide conductive film, can be used like IZO.

  Note that the bank 20 is formed between the pixels in order to prevent the organic EL layer 22 from being broken at the end portion due to disconnection. Further, the bank 20 prevents a short circuit between the lower electrode 21 and the upper electrode 23. The bank is formed of acryl resin or polyimide resin by photolithography. The light from the organic EL layer 22 is emitted to the side opposite to the element substrate 10 as shown by L in FIG. 1 to form an image.

  In the case of top emission, since light from the organic EL layer is extracted from the upper electrode side, a transparent conductive film is used for the upper electrode, but the film thickness cannot be increased in order to increase the light transmittance. Therefore, the resistance of the upper electrode is increased. In order to compensate for this, an auxiliary electrode is formed in a stripe shape on the bank in a portion that does not block light from the organic EL layer. The auxiliary electrode is made of an Al alloy having a low resistivity. This auxiliary electrode is also formed by mask vapor deposition.

  In the following examples, a method for cleaning a vapor deposition mask will be described. This vapor deposition mask includes a step of forming organic EL layers for red light emission, green light emission and blue light emission, a step of forming an upper electrode, and an auxiliary electrode. Used in the forming process.

  FIG. 1 shows a process flow of an example in which the present invention is applied to an organic EL panel manufacturing process as an in-line evaporation mask dry cleaning method. In the mask vapor deposition process, the vapor deposition mask and the element substrate are combined while performing mask alignment, and then an organic film such as a light emitting layer is vapor deposited.

The outline of the process flow in the case of organic film deposition by a cluster type deposition apparatus is as follows.
(1) Determining whether or not to replace the vapor deposition mask. When replacing the vapor deposition mask, the conventional vapor deposition mask is discharged and a new vapor deposition mask is carried into the vapor deposition chamber.
(2) The element substrate is carried into the vapor deposition chamber, and the element substrate and the vapor deposition mask are aligned and combined.
(3) Using an evaporation method, an organic film is deposited on the element substrate through an evaporation mask, and the organic film is patterned.
(4) The element substrate and the vapor deposition mask on which the organic film has been deposited are disassembled, and the element substrate is discharged from the vapor deposition chamber.
(5) When the number of times of use of the vapor deposition mask exceeds the set number of times, the vapor deposition mask is discharged and the process returns to the above step (1).
Among the steps described above, in steps other than (3), an organic film is prevented from being deposited on the element substrate or the vapor deposition mask by a shutter or the like.

The outline of the process flow in the case of organic film deposition by an in-line deposition apparatus is as follows.
(1) Combine the vapor deposition mask and the element substrate on the transfer tray.
(2) The element substrate and the vapor deposition mask are aligned.
(3) The tray on which the combined vapor deposition mask and the element substrate are mounted is moved in the vapor deposition chamber, and an organic film is deposited on the element substrate through the vapor deposition mask using the vapor deposition method, and the organic film is patterned.
(4) The tray on which the vapor deposition microphone and the element substrate are mounted is discharged from the vapor deposition chamber, and the element substrate on which the organic film has been deposited is disassembled from the vapor deposition mask. The element substrate is sent to the next process, and the vapor deposition mask is returned to the pre-alignment process in order to unite with the next element substrate.
(5) If the number of times of use of the vapor deposition mask exceeds the set number of times, the vapor deposition mask is discharged, a new vapor deposition mask is carried in, and the process returns to the step (1).

  The deposition mask cleaning method according to the present invention is applied between the above steps (5) and (1). That is, in the case of organic film deposition by a cluster type deposition apparatus, the deposition mask cleaned according to the present invention is carried into the deposition chamber as a new mask. In the case of organic film deposition by an in-line deposition apparatus, cleaning is performed while the deposition mask is returned to alignment.

  The deposition mask cleaning method of the present invention has the following process flow. First, it is determined whether or not the vapor deposition mask that has undergone vapor deposition is to be replaced (recycled cleaning). When the vapor deposition mask is to be replaced, it is carried out of the equipment, and when it is reused, cleaning according to the present invention is performed.

  (1A) is a preparation for laser peeling. By changing from a vacuum atmosphere to a nitrogen atmosphere, an atmosphere capable of stripping the deposited film by the pulse laser (1B) is realized. The pressure is equal to or lower than atmospheric pressure, but may be about 0.1 to 1.02 atm.

  (1B) is pulse laser irradiation. Pulsed laser is irradiated from the deposition surface of the vapor deposition mask to peel the deposit on the vapor deposition mask. By removing the deposit using the shock wave induced in the vapor deposition mask by the pulse laser, the temperature rise of the vapor deposition mask is suppressed. For this purpose, the repetition frequency, pulse width, and output of the pulse laser are adjusted in accordance with the vapor deposition mask material. These conditions may be determined within the allowable range of temperature rise and mask damage. Further, if necessary, the laser beam may be irradiated from the surface opposite to the deposition surface, or may be irradiated from both surfaces. In this method, the deposit on the vapor deposition mask is peeled off as a thin film piece. Although there is removal by ablation using a laser, this directly acts on the deposit and evaporates explosively, and damage to the vapor deposition mask is also observed. This is the difference from this method.

  (1C) is foreign matter removal. The peeled thin film piece adheres to the vapor deposition mask as a foreign substance or stays in the peeling chamber. Therefore, it is a major point of the present invention to provide a step for removing these foreign substances. In particular, since static electricity is generated in the vapor deposition mask irradiated with the laser light, it is important to remove the static electricity from the vapor deposition mask in order to remove the thin film pieces. In this step, large foreign matters such as thin film pieces are removed.

  (1D) is flushing. Nitrogen introduction and vacuum evacuation are repeated in the room in which the vapor deposition mask from which the thin film pieces have been removed is carried out, and minute foreign matters attached to the vapor deposition mask are removed. The nitrogen introduction pressure may be 0.1 to 1 atm, and the exhaust pressure may be a pressure (100 Pa or less) that is possible with a normal dry pump (roughing pump). The foreign matter removal effect may be determined by detecting foreign matter during exhaust using a particle monitor and determining the allowable range.

  FIG. 2 is an example of the equipment configuration that realizes the flowchart shown in FIG. In FIG. 2, 201 indicates a cleaning preparation chamber, 202 indicates a mask cleaning chamber, 203 indicates a flushing chamber, and 204 indicates a deposition mask discharge chamber. The pressure is adjusted to substantially the same pressure as the equipment pressure on the side on which the vapor deposition mask 210 is carried in, is carried into the cleaning preparation chamber 201, and is matched with the pressure in the mask cleaning chamber 202 (substantially atmospheric pressure). After the pressure in the cleaning preparation chamber 201 is adjusted, the tray 211 containing the vapor deposition mask 210 is transferred into the mask cleaning chamber 202. In the mask cleaning chamber 202, the deposit on the vapor deposition mass 211 is peeled off, and the thin film pieces generated by the peeling are removed. Therefore, a pulse laser irradiation system including a light source system (laser) 205, a galvanometer mirror 206, a condensing means (lens, etc.) 207, and dust collectors (dust collection systems) 208, 209 are provided.

  The pulse laser beam is irradiated from the deposition surface of the vapor deposition mask 210, but it may be irradiated from the opposite side as necessary. The dust collectors (dust collection systems) 208 and 209 suck the thin film pieces using the principle of dry cleaning used for removing foreign substances. In order to prevent decompression of the mask cleaning chamber 202 due to this suction, nitrogen is introduced to adjust the pressure. As the thin film piece removing method, as shown in FIG. 3, the method is performed simultaneously with the peeling of the deposit by the pulsed laser irradiation from the vapor deposition mask, and the method of peeling the deposit by the pulsed laser irradiation from the vapor deposition mask as shown in FIG. Although there is a method to be performed later, there is no problem if it is selected based on the effect of removing the thin film piece.

After this thin film piece is removed, the vapor deposition mask 210 is transferred to the flushing chamber 203 adjusted to substantially the same pressure as the mask cleaning chamber 202 chamber. In the flushing chamber 203, evacuation is performed, and then nitrogen is introduced. This operation (hereinafter referred to as flushing) is repeated while monitoring particles during exhaust. As described above, the nitrogen introduction pressure may be 0.1 to 1 atm, and the exhaust pressure may be a pressure (100 Pa or less) that is possible with a normal dry pump (rough pump). After completion of the flushing, the vapor deposition mask 210 is transferred from the flushing chamber 203 to the mask discharge chamber 204, and the mask discharge chamber 204 is evacuated to a high vacuum. After high vacuum evacuation, the deposition mask 210 is transferred to the next process (deposition process or deposition mask wet cleaning process). If the flushing effect is weak, a flushing chamber can be added. If there is a possibility that the vapor deposition mask is charged, electrostatic removal of the vapor deposition mask is added as necessary. This is important when transferring the deposition mask to the deposition process. This is because adhesion between the vapor deposition mask and the substrate can be prevented.
The big point in the above process is that a thin film piece removing step and a flushing step are provided. Thereby, generation | occurrence | production of the foreign material resulting from the vapor deposition mask in a vapor deposition process can be prevented, and the vapor deposition mask cleaning in in-line is enabled.

  FIG. 5 shows an example in which the neutralization of the vapor deposition mask is used in combination to remove the thin film pieces peeled from the vapor deposition mask by pulse laser irradiation. That is, the present embodiment is different from the first embodiment in that an electrostatic removal device (electrostatic removal system) 501 is provided.

  FIG. 6 shows an example in which thin film pieces are removed simultaneously with laser peeling, and FIG. 7 shows an example in which thin film pieces are removed after electrostatic removal. The removal of the thin film piece may be the same as in the first embodiment, or other methods may be used.

  In this embodiment, the removal effect of the thin film pieces is enhanced by performing electrostatic removal of the vapor deposition mask in the first embodiment.

  Example 3 shown in FIG. 8 is also characterized by the removal of thin film pieces generated by laser irradiation. In this embodiment, the vicinity of the charged dust collecting plate 801 is passed through the vapor deposition mask, and the thin film pieces adhering to the vapor deposition mask 210 are transferred by the charged dust collecting plate 801.

  The thin film piece removing step according to this embodiment is as follows. First, as shown in FIG. 8 (A), the charged dust collecting plate 801 is charged, and the upper part (the vicinity) is passed through the vapor deposition mask 210 to which the thin film piece is adhered, and the thin film piece adhered to the vapor deposition mask is charged. Copy to dust collector 801. Next, as shown in FIG. 8B, the charged dust collecting plate 801 from which the thin film pieces are copied is electrically neutralized. Further, as shown in FIG. 8C, the thin film pieces are removed from the electrically neutralized charged dust collecting plate 801 using dust collecting means.

  This embodiment may be used in combination with the second embodiment. That is, you may combine with the electrostatic removal used in Example 2. FIG. In this case, since the vapor deposition mask 210 is electrostatically removed, the adhesion force of the thin film pieces to the vapor deposition mask is weak, and the effect of removing the thin film pieces by the charged dust collecting plate 801 can be enhanced.

  In this embodiment, the charged dust collecting plate 801 may be used as an insulator and charged by using corona discharge or the like. In this case, the charged dust collecting plate 801 may be provided as a transparent plate in the laser irradiation unit.

  Example 4 shown in FIG. 9 is also characterized by the removal of thin film pieces generated by laser irradiation. In the present embodiment, the thin film pieces adhering to the vapor deposition mask 210 are transferred using the dust collection sheet 901. The dust collection sheet 901 is charged by the charging system 902, the thin film pieces attached to the vapor deposition mask 210 are transferred by the charged dust collection sheet 901, and then the dust collection sheet 901 is electrically neutralized by the charge removal system 903, The thin film pieces attached to the dust collection sheet 901 are removed by the dust collection means 904.

  Also in the case of this embodiment, as in the case of Embodiment 2, the thin film piece may be removed after removing the charge of the vapor deposition mask 210. In this case, since the vapor deposition mask 210 is electrostatically removed, the adhesion force of the thin film pieces to the vapor deposition mask is weak, and the effect of removing the thin film pieces by the dust collection sheet 901 can be enhanced.

  Although a dust collection sheet is used in this embodiment, a dust collection drum may be used. That is, it may be removed with a photosensitive drum similar to that used in electrophotography for removing thin film pieces from the vapor deposition mask.

  Example 5 shown in FIG. 10 is an example in which the deposition mask cleaning method of the present invention is applied to a part of an in-line type organic film deposition apparatus for an organic EL panel. In FIG. 10, 1 and 5 are delivery chambers, and 2 is a built-in chamber. 3 is a vapor deposition chamber, 4 is a dismantling chamber, 6 is a tray reflux chamber, 7 and 8 are mask stockers, 9 and 10 are substrate take-out chambers, 11 is a substrate, 12 is a vapor deposition mask, 13 is a set of vapor deposition mask and tray, 14 Is a set of a substrate, a vapor deposition mask and a tray.

  The tray reflux chamber 6 shown in FIG. 10 may be provided with means for realizing the deposition mask cleaning method shown in the first to fourth embodiments. With the equipment of this configuration, the process flow shown in FIG. 1 can be implemented.

  FIG. 11 shows an example of the process flow in the case where the present invention is applied to the regeneration cleaning of the vapor deposition mask. The regeneration cleaning of the vapor deposition mask here is not in-line cleaning, but the vapor deposition mask is taken out of the organic EL manufacturing apparatus to remove deposits and foreign matter on the vapor deposition mask, and can be used again for mask vapor deposition. It is to be. In the current technology, the deposit is dissolved by a hydrocarbon-based cleaning agent, and rinse cleaning is often performed using alcohol or HFC (hydrofluoroether).

  The process flow shown in FIG. 1 is different from the process flow shown in FIG. 1 in that the deposition mask cleaning process is all performed by a dry process, whereas in this embodiment, a wet process is used together.

  Hereinafter, a process for regenerating and cleaning a deposition mask according to the present invention will be described with reference to FIG.

  (11A) is a deposition mask input. The deposition mask determined to be regenerated is put into a regenerative cleaning apparatus. One vapor deposition mask may be input one by one, or a plurality of deposition masks may be set and input. In the latter case, MGV or AGV is used.

  (11B) is pulse laser irradiation. This step is the same as the step (1B) shown in FIG. That is, the deposit is peeled off from the deposition mask by irradiating the deposition mask with a pulse laser. By removing the deposit using the shock wave induced in the vapor deposition mask by the pulse laser, the temperature rise of the vapor deposition mask is suppressed. This prevents deformation of the vapor deposition mask due to heat. For this purpose, the repetition frequency, pulse width, and output of the pulse laser are adjusted in accordance with the vapor deposition mask material. These conditions may be determined within the allowable range of temperature rise and mask damage. If necessary, the laser may be irradiated from the surface opposite to the deposition surface, or may be irradiated from both surfaces. In this method, the deposit on the vapor deposition mask is peeled off as a thin film piece (peeling piece). In conventional regenerative cleaning using chemical solutions, there were some that could not be peeled due to the film quality of organic matter, but according to this method, shock waves can be generated in the evaporation mask material as long as it can transmit laser light, so deposits ( Peeling is possible regardless of the type of organic matter.

  (11C) is dry foreign matter removal. This step is also the same as step (1C) in FIG. That is, it is a step of removing the thin film pieces peeled from the vapor deposition mask, and the flushing shown in the step (1C) may be added if necessary. As a method for removing the thin film piece, the method described in the first to fourth embodiments may be used.

  (11D) is wet foreign matter removal. This step removes the foreign matter remaining on the vapor deposition mask from which the thin film pieces have been removed, and uses a solution. In dry cleaning, foreign matter increases as the number of cleanings increases. On the other hand, in the wet cleaning, since it is washed off directly with the liquid, it can be cleaned. The solution to be used may be water, but in view of subsequent drying, a solution having good wettability such as alcohol and HFC and being easily dried is desirable. In this step, ultrasonic cleaning or the like may be used together. However, the deposition mask is not damaged by excessively raising the temperature or applying a strong mechanical force. It can be considered that this step corresponds to a conventional rinse cleaning step of vapor deposition mask regeneration cleaning.

  (11E) is dry. The deposition mask subjected to the wet treatment is dried by putting it in a reduced pressure atmosphere, flowing warm air, or passing a solution that is easy to dry. However, even in this step, the deposition mask is not damaged by excessively raising the temperature or applying a strong mechanical force.

  (11F) is the deposition mask discharge. The dried evaporation mask is discharged out of the regenerative cleaning apparatus. The vapor deposition masks may be discharged one by one, but they can be stored in a cassette.

  In the mask regeneration cleaning process, the present invention represents (11B) to (11D). According to such a method, the organic film deposited on the vapor deposition mask can be removed almost without being restricted by the material, and furthermore, regenerative cleaning with reduced damage to the vapor deposition mask can be performed by low-temperature treatment.

  FIG. 12 shows a configuration example of equipment for executing the process flow shown in FIG. With reference to FIG. 12, the process for regenerating and cleaning the vapor deposition mask by the equipment shown in FIG. 12 will be described.

  The vapor deposition mask cassette 1402 having the vapor deposition mask 1401 mounted on the cassette loader 1410 is loaded using MGV or the like. The vapor deposition masks 1401 are taken out from the cassette 1402 one by one through the transfer chamber 1420 and transferred to the vapor deposition mask peeling / dry cleaning chamber 1430. In this room, the deposit on the vapor deposition mask is removed by pulse laser irradiation, and the thin film pieces generated by the separation are removed.

  In this example, the dust collectors 1435 and 1436 are used to remove the thin film pieces by suction. However, a static eliminator 1437 is provided to increase the removal efficiency. As can be seen from the figure, the configuration of the vapor deposition mask peeling / dry cleaning chamber 1430 is basically the same as that of the mask cleaning chamber 202 of FIG.

  Next, the wafer is transferred to the wet cleaning chamber 1450 through the transfer chamber 1440, and the vapor deposition mask 1401 is set on the wet processing jig in the vapor deposition mask setting stage 1451. Wet cleaning is performed in wet cleaning tanks 1452 and 1453 in which the vapor deposition mask held by the wet processing jig is filled with a predetermined solution. As the solution, alcohol or HFC is used. In the washing tank 1453 that is the final washing, it is preferable to use a solution that is less likely to cause washing spots. These may be selected from commercially available ones.

  Next, the vapor deposition mask is removed from the vapor deposition mask removal stage 1454 and transferred to the drying chamber 1460. Here, warm air drying or reduced pressure drying is performed. The dried deposition mask 1401 is stored in the deposition mask cassette 1403 set in the cassette unloader 1480 through the transfer chamber 1470.

  According to the cleaning method of the present invention, it is possible to remove the upper electrode film formed of a metal oxide and the auxiliary electrode film formed of a metal alloy in addition to the organic film. As described above, according to the present invention, it is possible to provide a regenerative cleaning process with little damage to the deposition mask without using a hydrocarbon-based cleaning agent. In addition, an organic film that cannot be removed with a solution-based cleaning agent can be peeled off from the vapor deposition mask, and a transparent conductive film such as an IZO film can also be removed. If the film is not too thick, the Al film or the like can be removed from the vapor deposition mask.

It is a flowchart of the organic EL material manufacturing process of this invention. It is a mask cleaning system of the present invention. It is a figure which performs peeling and suction by a laser simultaneously. It is a figure which performs attraction | suction after peeling by a laser. This is a mask cleaning system to which an electrostatic removing device is added. It is a figure which performs attraction | suction simultaneously with electrostatic removal. It is a figure which performs attraction | suction after electrostatic removal. It is a figure which removes a peeling piece using an electrification dust collection board. It is a figure which removes a peeling piece using a dust collection sheet. It is the figure which used the mask cleaning system in-line with the manufacturing apparatus. It is a flowchart which used wet cleaning together. It is a mask cleaning system figure which used wet cleaning together. It is sectional drawing of the display part of an organic electroluminescence display.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Element substrate, 11 ... 1st base film, 12 ... 2nd base film, 13 ... Semiconductor layer, 14 ... Gate insulating film, 15 ... Gate electrode, 16 ... Interlayer insulating film, 17 ... SD wiring, 18 ... Inorganic passivation 19: Organic passivation film, 20 ... Bank, 21 ... Lower electrode, 22 ... Organic EL layer, 23 ... Upper electrode, 30 ... Auxiliary electrode, 201 ... Cleaning preparation chamber, 202 ... Mask cleaning chamber, 203 ... Flushing chamber, 204 ... Mask discharge chamber, 205 ... Laser light source, 206 ... Galvano mirror, 207 ... Lens, 208, 209 ... Dust collector, 210 ... Deposition mask 210 ... Tray.

Claims (16)

  A method of cleaning a vapor deposition mask, wherein (A) a shock wave is induced in the vapor deposition mask by irradiating a laser beam on either the surface on which the deposit of the vapor deposition mask exists or the opposite surface, A method for cleaning a vapor deposition mask, wherein the step of peeling the deposit and (B) the step of removing the peeling piece of the deposit adhering to the vapor deposition mask irradiated with laser light are performed in-line.   2. The method of cleaning a vapor deposition mask according to claim 1, wherein the step (B) of removing the peeling pieces of the deposit adhered to the vapor deposition mask includes an electrostatic removal step of the vapor deposition mask.   2. The cleaning of a vapor deposition mask according to claim 1, wherein the step (B) of removing the peeling piece of the deposit attached to the vapor deposition mask removes the peeling piece of the deposit with a peeling sheet. Method.   4. The deposition mask cleaning method according to claim 3, wherein the peeling sheet is charged.   2. The vapor deposition mask cleaning method according to claim 1, wherein the vapor deposition mask from which the peeling pieces have been removed is placed in a predetermined process chamber, and gas introduction into the process chamber and evacuation are performed for at least one cycle.   6. The evaporation mask cleaning method according to claim 1, wherein the deposit is an organic film forming an organic EL layer.   6. The deposition mask cleaning method according to claim 1, wherein the deposit is at least one of IZO, ITO, and ZnO. 6. The deposition mask cleaning method according to claim 1, wherein the deposit is at least one of Al, Cu, and Cr.   6. The deposition mask cleaning method according to claim 1, wherein the cleaned deposition mask is washed with a liquid. The evaporation mask cleaning method according to claim 9, wherein at least one of alcohol and HFE is used as the liquid. The method for cleaning an evaporation mask according to claim 9, wherein ultrasonic cleaning is used in combination with the step of cleaning using the liquid. An organic EL display device manufacturing method including a step of evaporating an organic EL layer on an element substrate by moving above or next to an evaporation source in a matrix using an evaporation mask,
In the cleaning process of the vapor deposition mask, (A) a shock wave is induced in the vapor deposition mask by irradiating either the surface on which the deposit of the vapor deposition mask exists or a surface on the opposite side thereof, and the shock wave causes the shock wave to A method of manufacturing an organic EL display device, wherein the step of peeling the deposit and (B) the step of removing the peeling piece of the deposit adhering to the vapor deposition mask irradiated with the laser light are performed in-line.   After vapor deposition is performed on the element substrate using the vapor deposition mask, the vapor deposition mask is subjected to the steps (A) and (B) before being used for vapor deposition of another element substrate. The method of manufacturing an organic EL display device according to claim 12, wherein An organic EL display device manufacturing method including a step of evaporating an upper electrode using an evaporation mask on an organic EL layer formed in a matrix on an element substrate by moving above or next to an evaporation source There,
In the cleaning process of the vapor deposition mask, (A) a shock wave is induced in the vapor deposition mask by irradiating either the surface on which the deposit of the vapor deposition mask exists or a surface on the opposite side thereof, and the shock wave causes the shock wave to A method of manufacturing an organic EL display device, wherein the step of peeling the deposit and (B) the step of removing the peeling piece of the deposit adhering to the vapor deposition mask irradiated with the laser light are performed in-line.   After vapor deposition is performed on the element substrate using the vapor deposition mask, the vapor deposition mask is subjected to the steps (A) and (B) before being used for vapor deposition of another element substrate. 15. The method of manufacturing an organic EL display device according to claim 14,   16. The method of manufacturing an organic EL display device according to claim 12, wherein electrostatic removal is performed before or after the step (B).

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