CN1319070C - 多位磁存储元件 - Google Patents
多位磁存储元件 Download PDFInfo
- Publication number
- CN1319070C CN1319070C CNB011112263A CN01111226A CN1319070C CN 1319070 C CN1319070 C CN 1319070C CN B011112263 A CNB011112263 A CN B011112263A CN 01111226 A CN01111226 A CN 01111226A CN 1319070 C CN1319070 C CN 1319070C
- Authority
- CN
- China
- Prior art keywords
- layer
- data
- separate
- layers
- data layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5615—Multilevel magnetic memory cell using non-magnetic non-conducting interlayer, e.g. MTJ
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5616—Multilevel magnetic memory cell using non-magnetic conducting interlayer, e.g. GMR, SV, PSV
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/522308 | 2000-03-09 | ||
US09/522,308 US6590806B1 (en) | 2000-03-09 | 2000-03-09 | Multibit magnetic memory element |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1316746A CN1316746A (zh) | 2001-10-10 |
CN1319070C true CN1319070C (zh) | 2007-05-30 |
Family
ID=24080344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011112263A Expired - Lifetime CN1319070C (zh) | 2000-03-09 | 2001-03-09 | 多位磁存储元件 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6590806B1 (de) |
EP (1) | EP1132919B1 (de) |
JP (1) | JP4818523B2 (de) |
KR (1) | KR20010089201A (de) |
CN (1) | CN1319070C (de) |
DE (1) | DE60119199D1 (de) |
HK (1) | HK1041098A1 (de) |
TW (1) | TW514914B (de) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6911710B2 (en) * | 2000-03-09 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Multi-bit magnetic memory cells |
US6576480B2 (en) * | 2001-07-26 | 2003-06-10 | Micron Technology, Inc. | Structure and method for transverse field enhancement |
US6803616B2 (en) | 2002-06-17 | 2004-10-12 | Hewlett-Packard Development Company, L.P. | Magnetic memory element having controlled nucleation site in data layer |
DE10142594A1 (de) * | 2001-08-31 | 2003-03-27 | Infineon Technologies Ag | Kompensation eines magnetischen Biasfeldes in einer Speicherschicht einer magnetoresistiven Speicherzelle |
JP3866567B2 (ja) | 2001-12-13 | 2007-01-10 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
KR100457158B1 (ko) * | 2001-12-26 | 2004-11-16 | 주식회사 하이닉스반도체 | 대칭적인 스위칭 특성을 위한 마그네틱 메모리 셀 |
US6593608B1 (en) * | 2002-03-15 | 2003-07-15 | Hewlett-Packard Development Company, L.P. | Magneto resistive storage device having double tunnel junction |
TWI222763B (en) * | 2002-03-29 | 2004-10-21 | Toshiba Corp | Magnetic logic element and magnetic logic element array |
US6728132B2 (en) * | 2002-04-03 | 2004-04-27 | Micron Technology, Inc. | Synthetic-ferrimagnet sense-layer for high density MRAM applications |
US6985384B2 (en) * | 2002-10-01 | 2006-01-10 | International Business Machines Corporation | Spacer integration scheme in MRAM technology |
CN101114694A (zh) * | 2002-11-26 | 2008-01-30 | 株式会社东芝 | 磁单元和磁存储器 |
US6667901B1 (en) * | 2003-04-29 | 2003-12-23 | Hewlett-Packard Development Company, L.P. | Dual-junction magnetic memory device and read method |
JP4066361B2 (ja) | 2003-07-30 | 2008-03-26 | トヨタ自動車株式会社 | 燃料電池の冷却システム |
US6985385B2 (en) * | 2003-08-26 | 2006-01-10 | Grandis, Inc. | Magnetic memory element utilizing spin transfer switching and storing multiple bits |
JP2005150482A (ja) * | 2003-11-18 | 2005-06-09 | Sony Corp | 磁気抵抗効果素子及び磁気メモリ装置 |
US6925000B2 (en) | 2003-12-12 | 2005-08-02 | Maglabs, Inc. | Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture |
JP2005310840A (ja) * | 2004-04-16 | 2005-11-04 | Toshiba Corp | 磁気ランダムアクセスメモリ |
US7502248B2 (en) * | 2004-05-21 | 2009-03-10 | Samsung Electronics Co., Ltd. | Multi-bit magnetic random access memory device |
EP1890296B1 (de) | 2004-05-21 | 2010-11-17 | Samsung Electronics Co., Ltd. | Magnetische Multibit-Speicherzellenvorrichtung mit wahlfreiem Zugriff und Verfahren zum Betrieb und Auslesen derselben |
US7436632B2 (en) * | 2004-06-30 | 2008-10-14 | Seagate Technology Llc | Differential/dual CPP recording head |
US7061037B2 (en) * | 2004-07-06 | 2006-06-13 | Maglabs, Inc. | Magnetic random access memory with multiple memory layers and improved memory cell selectivity |
US7075818B2 (en) * | 2004-08-23 | 2006-07-11 | Maglabs, Inc. | Magnetic random access memory with stacked memory layers having access lines for writing and reading |
JP2006093432A (ja) | 2004-09-24 | 2006-04-06 | Sony Corp | 記憶素子及びメモリ |
RU2310928C2 (ru) | 2004-10-27 | 2007-11-20 | Самсунг Электроникс Ко., Лтд. | Усовершенствованное многоразрядное магнитное запоминающее устройство с произвольной выборкой и способы его функционирования и производства |
US20060171197A1 (en) * | 2005-01-31 | 2006-08-03 | Ulrich Klostermann | Magnetoresistive memory element having a stacked structure |
US7173848B2 (en) * | 2005-02-01 | 2007-02-06 | Meglabs, Inc. | Magnetic random access memory with memory cell stacks having more than two magnetic states |
US7379321B2 (en) * | 2005-02-04 | 2008-05-27 | Hitachi Global Storage Technologies Netherlands B.V. | Memory cell and programmable logic having ferromagnetic structures exhibiting the extraordinary hall effect |
KR100647319B1 (ko) | 2005-02-05 | 2006-11-23 | 삼성전자주식회사 | 스핀 분극 전류를 이용한 멀티 비트 자기 메모리 소자와그 제조 및 구동 방법 |
US7285836B2 (en) * | 2005-03-09 | 2007-10-23 | Maglabs, Inc. | Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing |
US7453720B2 (en) * | 2005-05-26 | 2008-11-18 | Maglabs, Inc. | Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing |
US20070253245A1 (en) * | 2006-04-27 | 2007-11-01 | Yadav Technology | High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory |
US8183652B2 (en) * | 2007-02-12 | 2012-05-22 | Avalanche Technology, Inc. | Non-volatile magnetic memory with low switching current and high thermal stability |
US8535952B2 (en) * | 2006-02-25 | 2013-09-17 | Avalanche Technology, Inc. | Method for manufacturing non-volatile magnetic memory |
US8058696B2 (en) * | 2006-02-25 | 2011-11-15 | Avalanche Technology, Inc. | High capacity low cost multi-state magnetic memory |
US8084835B2 (en) * | 2006-10-20 | 2011-12-27 | Avalanche Technology, Inc. | Non-uniform switching based non-volatile magnetic based memory |
US8508984B2 (en) * | 2006-02-25 | 2013-08-13 | Avalanche Technology, Inc. | Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof |
US8063459B2 (en) * | 2007-02-12 | 2011-11-22 | Avalanche Technologies, Inc. | Non-volatile magnetic memory element with graded layer |
US8018011B2 (en) * | 2007-02-12 | 2011-09-13 | Avalanche Technology, Inc. | Low cost multi-state magnetic memory |
US20080246104A1 (en) * | 2007-02-12 | 2008-10-09 | Yadav Technology | High Capacity Low Cost Multi-State Magnetic Memory |
US7732881B2 (en) * | 2006-11-01 | 2010-06-08 | Avalanche Technology, Inc. | Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM) |
US7388776B1 (en) * | 2006-12-22 | 2008-06-17 | Hitachi Global Storage Technologies Netherlands, B.V. | Three-dimensional magnetic memory |
JP5455313B2 (ja) * | 2008-02-21 | 2014-03-26 | 株式会社東芝 | 磁気記憶素子及び磁気記憶装置 |
US8802451B2 (en) | 2008-02-29 | 2014-08-12 | Avalanche Technology Inc. | Method for manufacturing high density non-volatile magnetic memory |
US9929211B2 (en) * | 2008-09-24 | 2018-03-27 | Qualcomm Incorporated | Reducing spin pumping induced damping of a free layer of a memory device |
US8331141B2 (en) | 2009-08-05 | 2012-12-11 | Alexander Mikhailovich Shukh | Multibit cell of magnetic random access memory with perpendicular magnetization |
US8988934B2 (en) | 2010-07-27 | 2015-03-24 | Alexander Mikhailovich Shukh | Multibit cell of magnetic random access memory with perpendicular magnetization |
US8279662B2 (en) | 2010-11-11 | 2012-10-02 | Seagate Technology Llc | Multi-bit magnetic memory with independently programmable free layer domains |
US8203870B2 (en) | 2010-11-23 | 2012-06-19 | Seagate Technology Llc | Flux programmed multi-bit magnetic memory |
US9047964B2 (en) | 2012-08-20 | 2015-06-02 | Qualcomm Incorporated | Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5930164A (en) * | 1998-02-26 | 1999-07-27 | Motorola, Inc. | Magnetic memory unit having four states and operating method thereof |
EP0971423A1 (de) * | 1998-07-10 | 2000-01-12 | Interuniversitair Micro-Elektronica Centrum Vzw | Spin-Valve-Struktur und Herstellungsverfahren |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5936293A (en) * | 1998-01-23 | 1999-08-10 | International Business Machines Corporation | Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer |
US6278589B1 (en) * | 1999-03-30 | 2001-08-21 | International Business Machines Corporation | Dual GMR sensor with a single AFM layer |
-
2000
- 2000-03-09 US US09/522,308 patent/US6590806B1/en not_active Expired - Lifetime
-
2001
- 2001-02-09 TW TW090102977A patent/TW514914B/zh not_active IP Right Cessation
- 2001-02-26 EP EP01301747A patent/EP1132919B1/de not_active Expired - Lifetime
- 2001-02-26 DE DE60119199T patent/DE60119199D1/de not_active Expired - Lifetime
- 2001-03-08 KR KR1020010011899A patent/KR20010089201A/ko not_active Application Discontinuation
- 2001-03-09 CN CNB011112263A patent/CN1319070C/zh not_active Expired - Lifetime
- 2001-03-09 JP JP2001066411A patent/JP4818523B2/ja not_active Expired - Fee Related
-
2002
- 2002-04-08 HK HK02102604.2A patent/HK1041098A1/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5930164A (en) * | 1998-02-26 | 1999-07-27 | Motorola, Inc. | Magnetic memory unit having four states and operating method thereof |
EP0971423A1 (de) * | 1998-07-10 | 2000-01-12 | Interuniversitair Micro-Elektronica Centrum Vzw | Spin-Valve-Struktur und Herstellungsverfahren |
Also Published As
Publication number | Publication date |
---|---|
EP1132919A2 (de) | 2001-09-12 |
US6590806B1 (en) | 2003-07-08 |
TW514914B (en) | 2002-12-21 |
KR20010089201A (ko) | 2001-09-29 |
EP1132919A3 (de) | 2002-08-21 |
HK1041098A1 (zh) | 2002-06-28 |
CN1316746A (zh) | 2001-10-10 |
JP2001313377A (ja) | 2001-11-09 |
EP1132919B1 (de) | 2006-05-03 |
JP4818523B2 (ja) | 2011-11-16 |
DE60119199D1 (de) | 2006-06-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD Free format text: FORMER OWNER: HEWLETT-PACKARD DEVELOPMENT COMPANY Effective date: 20071228 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20071228 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Electronics Co., Ltd. Address before: California, USA Patentee before: Hewlett-Packard Co. |
|
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1041098 Country of ref document: HK |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20070530 |