CN1318112A - 溅射靶 - Google Patents
溅射靶 Download PDFInfo
- Publication number
- CN1318112A CN1318112A CN00801420A CN00801420A CN1318112A CN 1318112 A CN1318112 A CN 1318112A CN 00801420 A CN00801420 A CN 00801420A CN 00801420 A CN00801420 A CN 00801420A CN 1318112 A CN1318112 A CN 1318112A
- Authority
- CN
- China
- Prior art keywords
- target
- grinding
- backing plate
- crackle
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 21
- 238000000227 grinding Methods 0.000 claims abstract description 82
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 238000005554 pickling Methods 0.000 claims description 2
- 238000007669 thermal treatment Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 238000005304 joining Methods 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 33
- 230000000052 comparative effect Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
样品表面的磨削方向 | Ra(μm) | 平均强度(kg/mm2) | 标准偏差 | |
参考例1 | 镜面 | 0.0070 | 11.07 | 0.99 |
实施例1 | #400长度方向 | 0.2988 | 12.38 | 0.85 |
实施例2 | #80长度方向 | 1.1910 | 11.02 | 1.79 |
比较例1 | #400横向 | 0.3015 | 11.09 | 0.71 |
比较例2 | #80横向 | 2.1170 | 6.55 | 0.39 |
样品表面的磨削方向 | Ra(μm) | 平均强度(kg/mm2) | 标准偏差 | |
参考例2 | 镜面 | 0.0090 | 10.18 | 0.40 |
实施例3 | #400长度方向 | 0.2130 | 11.47 | 0.35 |
实施例4 | #80长度方向 | 1.1800 | 9.77 | 0.55 |
比较例3 | #400横向 | 0.3835 | 10.20 | 0.42 |
比较例4 | #80横向 | 2.9150 | 5.7 6 | 0.18 |
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP201360/99 | 1999-07-15 | ||
JP201360/1999 | 1999-07-15 | ||
JP20136099A JP3628554B2 (ja) | 1999-07-15 | 1999-07-15 | スパッタリングターゲット |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1318112A true CN1318112A (zh) | 2001-10-17 |
CN1247812C CN1247812C (zh) | 2006-03-29 |
Family
ID=16439771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008014205A Expired - Lifetime CN1247812C (zh) | 1999-07-15 | 2000-05-01 | 溅射靶 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6464847B1 (zh) |
EP (1) | EP1116800B1 (zh) |
JP (1) | JP3628554B2 (zh) |
KR (1) | KR100384369B1 (zh) |
CN (1) | CN1247812C (zh) |
DE (1) | DE60042583D1 (zh) |
WO (1) | WO2001006029A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100471986C (zh) * | 2003-02-20 | 2009-03-25 | 贝卡尔特股份有限公司 | 制造溅射靶的方法 |
CN105683408A (zh) * | 2014-08-22 | 2016-06-15 | 三井金属矿业株式会社 | 圆筒形溅射靶用靶材的制造方法和圆筒形溅射靶 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002322560A (ja) * | 2001-04-24 | 2002-11-08 | Mitsui Mining & Smelting Co Ltd | スパッタリングターゲット及びその製造方法 |
US6673220B2 (en) * | 2001-05-21 | 2004-01-06 | Sharp Laboratories Of America, Inc. | System and method for fabricating silicon targets |
JP4843883B2 (ja) * | 2001-08-17 | 2011-12-21 | 東ソー株式会社 | スパッタリングターゲット |
TW562870B (en) * | 2001-10-12 | 2003-11-21 | Tosoh Corp | Sputtering target |
KR20040057287A (ko) * | 2002-12-26 | 2004-07-02 | 삼성전자주식회사 | 스퍼터링용 타겟 |
US6921470B2 (en) * | 2003-02-13 | 2005-07-26 | Cabot Corporation | Method of forming metal blanks for sputtering targets |
JP4959118B2 (ja) * | 2004-04-30 | 2012-06-20 | 株式会社アルバック | スパッタリング装置及びスパッタリング装置用のターゲット |
WO2007084114A2 (en) * | 2005-01-12 | 2007-07-26 | New York University | System and method for processing nanowires with holographic optical tweezers |
JP5467735B2 (ja) * | 2007-07-02 | 2014-04-09 | 東ソー株式会社 | 円筒形スパッタリングターゲット |
JP5344864B2 (ja) * | 2008-07-31 | 2013-11-20 | 富士フイルム株式会社 | 成膜装置および成膜方法 |
KR101049560B1 (ko) * | 2008-11-11 | 2011-07-15 | 희성금속 주식회사 | 고밀도 산화 아연계 스퍼터링 타겟 |
CN102501045B (zh) * | 2011-10-20 | 2014-10-08 | 宁波江丰电子材料股份有限公司 | 镍靶材组件的加工方法及加工装置 |
TWI623634B (zh) | 2011-11-08 | 2018-05-11 | 塔沙Smd公司 | 具有特殊表面處理和良好顆粒性能之矽濺鍍靶及其製造方法 |
US9870902B2 (en) | 2013-04-30 | 2018-01-16 | Kobelco Research Institute, Inc. | Li-containing oxide target assembly |
US9761420B2 (en) * | 2013-12-13 | 2017-09-12 | Praxair S.T. Technology, Inc. | Diffusion bonded high purity copper sputtering target assemblies |
JP6527609B2 (ja) * | 2017-02-16 | 2019-06-05 | 住友化学株式会社 | スパッタリングターゲットの加工方法、スパッタリングターゲットの加工装置、およびスパッタリングターゲット製品の製造方法 |
CN108655416A (zh) * | 2017-03-28 | 2018-10-16 | 宁波江丰电子材料股份有限公司 | 金靶材的车削方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5789551A (en) | 1980-11-17 | 1982-06-03 | Toshiba Corp | Grinding process for sapphire wafer |
JPS59197568A (ja) * | 1983-04-21 | 1984-11-09 | Matsushita Electric Ind Co Ltd | スパツタリング用セラミツクスタ−ゲツト |
JPS61291964A (ja) * | 1985-06-17 | 1986-12-22 | Anelva Corp | スパツタ用樹脂タ−ゲツト |
US5269899A (en) * | 1992-04-29 | 1993-12-14 | Tosoh Smd, Inc. | Cathode assembly for cathodic sputtering apparatus |
JPH09287072A (ja) * | 1996-04-19 | 1997-11-04 | Japan Energy Corp | スパッタリングタ−ゲット組立体及びその製造方法 |
JP3460506B2 (ja) * | 1996-11-01 | 2003-10-27 | 三菱マテリアル株式会社 | 高誘電体膜形成用スパッタリングターゲット |
KR100539612B1 (ko) | 1997-02-28 | 2006-03-20 | 도소 가부시키가이샤 | 스퍼터링타겟제조방법 |
JP4081840B2 (ja) * | 1997-02-28 | 2008-04-30 | 東ソー株式会社 | スパッタリングターゲットの製造方法 |
JPH10310471A (ja) * | 1997-05-09 | 1998-11-24 | Mitsubishi Materials Corp | 高誘電体膜形成用スパッタリングターゲット |
JP4018212B2 (ja) * | 1997-10-24 | 2007-12-05 | Dowaホールディングス株式会社 | スパッタリングターゲットのろう接方法 |
JP2001131737A (ja) * | 1999-11-09 | 2001-05-15 | Nikko Materials Co Ltd | スパッタリングターゲット及びその研削方法 |
-
1999
- 1999-07-15 JP JP20136099A patent/JP3628554B2/ja not_active Expired - Lifetime
-
2000
- 2000-05-01 KR KR10-2001-7003155A patent/KR100384369B1/ko active IP Right Grant
- 2000-05-01 EP EP00922926A patent/EP1116800B1/en not_active Expired - Lifetime
- 2000-05-01 US US09/763,248 patent/US6464847B1/en not_active Expired - Lifetime
- 2000-05-01 WO PCT/JP2000/002865 patent/WO2001006029A1/ja active IP Right Grant
- 2000-05-01 CN CNB008014205A patent/CN1247812C/zh not_active Expired - Lifetime
- 2000-05-01 DE DE60042583T patent/DE60042583D1/de not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100471986C (zh) * | 2003-02-20 | 2009-03-25 | 贝卡尔特股份有限公司 | 制造溅射靶的方法 |
CN105683408A (zh) * | 2014-08-22 | 2016-06-15 | 三井金属矿业株式会社 | 圆筒形溅射靶用靶材的制造方法和圆筒形溅射靶 |
Also Published As
Publication number | Publication date |
---|---|
EP1116800A4 (en) | 2004-09-08 |
JP3628554B2 (ja) | 2005-03-16 |
EP1116800B1 (en) | 2009-07-22 |
KR100384369B1 (ko) | 2003-05-22 |
WO2001006029A1 (fr) | 2001-01-25 |
DE60042583D1 (de) | 2009-09-03 |
JP2001026863A (ja) | 2001-01-30 |
US6464847B1 (en) | 2002-10-15 |
CN1247812C (zh) | 2006-03-29 |
EP1116800A1 (en) | 2001-07-18 |
KR20010075045A (ko) | 2001-08-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: NIPPON MINING AND METALS CO., LTD. Free format text: FORMER NAME OR ADDRESS: NIKKO MATERIALS CO. LTD |
|
CP03 | Change of name, title or address |
Address after: Tokyo, Japan, Japan Patentee after: Nippon Mining & Metals Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Nikko Materials Company, Limited |
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C56 | Change in the name or address of the patentee |
Owner name: JX NIPPON MINING + METALS CORP. Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: JX Nippon Mining & Metals Corporation Address before: Tokyo, Japan, Japan Patentee before: Nippon Mining & Metals Co., Ltd. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: JX NIPPON MINING & METALS CORPORATION Address before: Tokyo, Japan, Japan Patentee before: JX Nippon Mining & Metals Corporation |
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CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20060329 |
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CX01 | Expiry of patent term |