CN1297533A - 磁检测器及其制造方法,铁磁隧道结器件及其制造方法,以及使用它的磁头 - Google Patents
磁检测器及其制造方法,铁磁隧道结器件及其制造方法,以及使用它的磁头 Download PDFInfo
- Publication number
- CN1297533A CN1297533A CN00800459A CN00800459A CN1297533A CN 1297533 A CN1297533 A CN 1297533A CN 00800459 A CN00800459 A CN 00800459A CN 00800459 A CN00800459 A CN 00800459A CN 1297533 A CN1297533 A CN 1297533A
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- CN
- China
- Prior art keywords
- magnetosphere
- tunnel junction
- ferromagnetic
- layer
- tunnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Abstract
Description
Claims (26)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11053020A JP2000251229A (ja) | 1999-03-01 | 1999-03-01 | 磁気センサ、その製造方法及び磁気ヘッド |
JP53020/1999 | 1999-03-01 | ||
JP05397499A JP4124533B2 (ja) | 1999-03-02 | 1999-03-02 | 強磁性トンネル接合素子及びその製造方法 |
JP53974/1999 | 1999-03-20 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100058314A Division CN1267895C (zh) | 1999-03-01 | 2000-01-25 | 磁检测器及其制造方法,铁磁隧道结器件及其制造方法,以及使用它的磁头 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1297533A true CN1297533A (zh) | 2001-05-30 |
CN1165777C CN1165777C (zh) | 2004-09-08 |
Family
ID=26393723
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100058314A Expired - Fee Related CN1267895C (zh) | 1999-03-01 | 2000-01-25 | 磁检测器及其制造方法,铁磁隧道结器件及其制造方法,以及使用它的磁头 |
CNB008004595A Expired - Fee Related CN1165777C (zh) | 1999-03-01 | 2000-01-25 | 磁检测器及其制造方法,以及使用它的磁头 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100058314A Expired - Fee Related CN1267895C (zh) | 1999-03-01 | 2000-01-25 | 磁检测器及其制造方法,铁磁隧道结器件及其制造方法,以及使用它的磁头 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6741434B1 (zh) |
KR (1) | KR100722334B1 (zh) |
CN (2) | CN1267895C (zh) |
DE (1) | DE10080670T1 (zh) |
WO (1) | WO2000052489A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101233421B (zh) * | 2005-07-29 | 2010-10-06 | 艾沃思宾技术公司 | 磁性隧道结传感器方法 |
CN103959407A (zh) * | 2011-11-30 | 2014-07-30 | 索尼公司 | 具有低写入错误率的自旋转移力矩磁存储元件 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4177954B2 (ja) * | 2000-06-30 | 2008-11-05 | 株式会社日立グローバルストレージテクノロジーズ | 磁気トンネル接合積層型ヘッド及びその製法 |
KR100382764B1 (ko) * | 2001-01-06 | 2003-05-09 | 삼성전자주식회사 | 터널링 자기저항 소자 및 그 제조방법 |
JP3590006B2 (ja) * | 2001-06-22 | 2004-11-17 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
KR20040011128A (ko) * | 2002-07-29 | 2004-02-05 | 주식회사 씨앤케이 | 고포화자화 박막과 저포화자화 박막을 다층화시킨 자계센서 |
KR20040050128A (ko) * | 2002-12-09 | 2004-06-16 | 주식회사 씨앤케이 | 다층 pcb 제조공법을 이용한 자기임피던스센서 |
GB2502971B (en) | 2012-06-11 | 2017-10-04 | Knowles (Uk) Ltd | A capacitive structure |
JP7203490B2 (ja) | 2017-09-29 | 2023-01-13 | 昭和電工株式会社 | 磁気センサ集合体及び磁気センサ集合体の製造方法 |
CN114062978B (zh) * | 2021-11-15 | 2024-02-02 | 东南大学 | 一种基于压电隧道效应的mems磁场传感器及测量磁场方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0870148A (ja) * | 1994-08-30 | 1996-03-12 | Mitsubishi Materials Corp | 磁気抵抗素子 |
US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
JP3617175B2 (ja) * | 1996-03-29 | 2005-02-02 | ソニー株式会社 | 磁気トンネリング接合素子 |
SG72760A1 (en) * | 1996-09-19 | 2000-05-23 | Tdk Corp | Ferromagnetic tunnel junction magnetoresistive element and magnetic head |
US5968677A (en) * | 1996-12-18 | 1999-10-19 | Hitachi, Ltd. | Ferromagnetic material and magnetic apparatus employing the ferromagnetic material |
US6299990B1 (en) * | 1996-12-18 | 2001-10-09 | Hitachi, Ltd. | Ferromagnetic material and magnetic apparatus employing the ferromagnetic material |
JP2871670B1 (ja) * | 1997-03-26 | 1999-03-17 | 富士通株式会社 | 強磁性トンネル接合磁気センサ、その製造方法、磁気ヘッド、および磁気記録/再生装置 |
US6069820A (en) * | 1998-02-20 | 2000-05-30 | Kabushiki Kaisha Toshiba | Spin dependent conduction device |
US6381171B1 (en) * | 1999-05-19 | 2002-04-30 | Kabushiki Kaisha Toshiba | Magnetic element, magnetic read head, magnetic storage device, magnetic memory device |
JP2001084758A (ja) * | 1999-09-17 | 2001-03-30 | Fujitsu Ltd | 強磁性トンネル接合ランダムアクセスメモリ、スピンバルブランダムアクセスメモリ、単一強磁性膜ランダムアクセスメモリ、およびこれらをつかったメモリセルアレイ |
US6331944B1 (en) * | 2000-04-13 | 2001-12-18 | International Business Machines Corporation | Magnetic random access memory using a series tunnel element select mechanism |
US6504689B1 (en) * | 2000-07-12 | 2003-01-07 | International Business Machines Corporation | Tunnel junction read head with flux guide coupled to and magnetically extending a recessed free layer to an air bearing surface |
US6567244B1 (en) * | 2000-10-10 | 2003-05-20 | Hitachi Global Storage Technologies Netherlands | Differential yoke type read head |
-
2000
- 2000-01-25 KR KR1020007012085A patent/KR100722334B1/ko not_active IP Right Cessation
- 2000-01-25 CN CNB2004100058314A patent/CN1267895C/zh not_active Expired - Fee Related
- 2000-01-25 CN CNB008004595A patent/CN1165777C/zh not_active Expired - Fee Related
- 2000-01-25 DE DE10080670T patent/DE10080670T1/de not_active Ceased
- 2000-01-25 WO PCT/JP2000/000351 patent/WO2000052489A1/ja active IP Right Grant
- 2000-11-01 US US09/704,010 patent/US6741434B1/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101233421B (zh) * | 2005-07-29 | 2010-10-06 | 艾沃思宾技术公司 | 磁性隧道结传感器方法 |
CN103959407A (zh) * | 2011-11-30 | 2014-07-30 | 索尼公司 | 具有低写入错误率的自旋转移力矩磁存储元件 |
CN103959407B (zh) * | 2011-11-30 | 2016-12-14 | 索尼公司 | 具有低写入错误率的自旋转移力矩磁存储元件 |
Also Published As
Publication number | Publication date |
---|---|
DE10080670T1 (de) | 2001-06-13 |
CN1165777C (zh) | 2004-09-08 |
US6741434B1 (en) | 2004-05-25 |
CN1267895C (zh) | 2006-08-02 |
CN1542743A (zh) | 2004-11-03 |
WO2000052489A1 (fr) | 2000-09-08 |
KR100722334B1 (ko) | 2007-05-28 |
KR20010043167A (ko) | 2001-05-25 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CI01 | Publication of corrected invention patent application |
Correction item: Priority Correct: Second priority days 1999.03.02 False: Second priority days 1999.03.20 Number: 36 Page: 475 Volume: 20 |
|
CI03 | Correction of invention patent |
Correction item: Priority Correct: Second priority days|1999.03.02 False: Second priority days|1999.03.20 Number: 36 Page: The title page Volume: 20 |
|
COR | Change of bibliographic data |
Free format text: CORRECT: PRIORITY; FROM: NO. 2 DATE OF PRIORITY 1999.3.20 TO: NO. 2 DATE OF PRIORITY 1999.3.2 |
|
ERR | Gazette correction |
Free format text: CORRECT: PRIORITY; FROM: NO. 2 DATE OF PRIORITY 1999.3.20 TO: NO. 2 DATE OF PRIORITY 1999.3.2 |
|
CI01 | Publication of corrected invention patent application |
Correction item: Priority Correct: 19990302 False: 19990320 Number: 36 Page: 475 Volume: 20 |
|
CI03 | Correction of invention patent |
Correction item: Priority Correct: 19990302 False: 19990320 Number: 36 Page: The title page Volume: 20 |
|
COR | Change of bibliographic data |
Free format text: CORRECT: PRIORITY; FROM: 1999.3.20 TO: 1999.3.2 |
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ERR | Gazette correction |
Free format text: CORRECT: PRIORITY; FROM: 1999.3.20 TO: 1999.3.2 |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040908 Termination date: 20120125 |