CN1295628A - 淀积双轴结构涂层的方法与设备 - Google Patents

淀积双轴结构涂层的方法与设备 Download PDF

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Publication number
CN1295628A
CN1295628A CN99804648A CN99804648A CN1295628A CN 1295628 A CN1295628 A CN 1295628A CN 99804648 A CN99804648 A CN 99804648A CN 99804648 A CN99804648 A CN 99804648A CN 1295628 A CN1295628 A CN 1295628A
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CN
China
Prior art keywords
substrate
target
magnetron
sputter
magnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN99804648A
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English (en)
Chinese (zh)
Inventor
R·德克里西
J·的那
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Bekaert NV SA
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Universiteit Gent
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Publication of CN1295628A publication Critical patent/CN1295628A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Moulding By Coating Moulds (AREA)
CN99804648A 1998-03-31 1999-03-30 淀积双轴结构涂层的方法与设备 Pending CN1295628A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP98201006.8 1998-03-31
EP98201006 1998-03-31

Publications (1)

Publication Number Publication Date
CN1295628A true CN1295628A (zh) 2001-05-16

Family

ID=8233538

Family Applications (1)

Application Number Title Priority Date Filing Date
CN99804648A Pending CN1295628A (zh) 1998-03-31 1999-03-30 淀积双轴结构涂层的方法与设备

Country Status (8)

Country Link
EP (1) EP1070154A1 (ko)
JP (1) JP2002509988A (ko)
KR (1) KR20010042128A (ko)
CN (1) CN1295628A (ko)
AU (1) AU746645C (ko)
CA (1) CA2326202C (ko)
RU (1) RU2224050C2 (ko)
WO (1) WO1999050471A1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101126147B (zh) * 2006-08-16 2012-12-05 弗拉基米尔·希里罗夫 离子束处理电介质表面的方法及实施该方法的装置
CN104593742A (zh) * 2015-01-20 2015-05-06 清华大学深圳研究生院 一种制备具有双轴织构的氧化物薄膜的设备和方法
CN113808935A (zh) * 2020-06-16 2021-12-17 中微半导体设备(上海)股份有限公司 耐腐蚀涂层形成方法和装置、等离子体零部件和反应装置

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KR100352976B1 (ko) * 1999-12-24 2002-09-18 한국기계연구원 전기도금법에 의한 2축 집합조직을 갖는 니켈 도금층 및 그 제조방법
WO2013170052A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
EP2674513B1 (en) 2009-05-13 2018-11-14 SiO2 Medical Products, Inc. Vessel coating and inspection
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
KR101794586B1 (ko) 2011-05-23 2017-11-08 삼성디스플레이 주식회사 스퍼터링용 분할 타겟 장치 및 그것을 이용한 스퍼터링 방법
CN103930595A (zh) 2011-11-11 2014-07-16 Sio2医药产品公司 用于药物包装的钝化、pH保护性或润滑性涂层、涂布方法以及设备
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
RU2502151C1 (ru) * 2012-04-24 2013-12-20 Федеральное государственное бюджетное учреждение науки Институт общей физики им. А.М. Прохорова Российской академии наук (ИОФ РАН) Способ изготовления фотокатода и устройство для изготовления фотокатода
WO2014071061A1 (en) 2012-11-01 2014-05-08 Sio2 Medical Products, Inc. Coating inspection method
EP2920567B1 (en) 2012-11-16 2020-08-19 SiO2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
WO2014085346A1 (en) 2012-11-30 2014-06-05 Sio2 Medical Products, Inc. Hollow body with inside coating
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
WO2014127230A1 (en) 2013-02-15 2014-08-21 Regents Of The University Of Minnesota Particle functionalization
WO2014134577A1 (en) 2013-03-01 2014-09-04 Sio2 Medical Products, Inc. Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
WO2014164928A1 (en) 2013-03-11 2014-10-09 Sio2 Medical Products, Inc. Coated packaging
WO2014144926A1 (en) 2013-03-15 2014-09-18 Sio2 Medical Products, Inc. Coating method
WO2015033808A1 (ja) * 2013-09-04 2015-03-12 東洋鋼鈑株式会社 酸化物層の成膜方法、並びにエピタキシャル成長用積層基材及びその製造方法
US11066745B2 (en) 2014-03-28 2021-07-20 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
KR102140210B1 (ko) * 2014-06-23 2020-07-31 어플라이드 머티어리얼스, 인코포레이티드 층을 증착하는 방법, 트랜지스터를 제조하는 방법, 전자 디바이스에 대한 층 스택, 및 전자 디바이스
CN104109841B (zh) * 2014-07-23 2016-08-24 中国科学院上海光学精密机械研究所 磁控溅射倾斜沉积镀膜装置
CA3204930A1 (en) 2015-08-18 2017-02-23 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
RU2620534C2 (ru) * 2015-09-08 2017-05-26 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Казанский (Приволжский) федеральный университет" (ФГАОУВПО КФУ) Способ нанесения покрытий и устройство для его осуществления

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DE4333022A1 (de) * 1993-09-29 1995-03-30 Ronald Dipl Phys Gottzein Verfahren zur Herstellung bitexturierter Dünnfilme auf amorphen oder beliebig strukturierten Substraten
DE4436285C2 (de) * 1994-10-11 2002-01-10 Univ Stuttgart Verfahren und Vorrichtung zum Aufbringen von Orientierungsschichten auf ein Substrat zum Ausrichten von Flüssigkristallmolekülen
DE19641584C1 (de) * 1996-09-30 1998-01-08 Siemens Ag Anordnung und Verfahren zum Aufbringen einer dünnen Schicht auf ein Substrat

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101126147B (zh) * 2006-08-16 2012-12-05 弗拉基米尔·希里罗夫 离子束处理电介质表面的方法及实施该方法的装置
CN104593742A (zh) * 2015-01-20 2015-05-06 清华大学深圳研究生院 一种制备具有双轴织构的氧化物薄膜的设备和方法
CN104593742B (zh) * 2015-01-20 2017-02-22 清华大学深圳研究生院 一种制备具有双轴织构的氧化物薄膜的设备和方法
CN113808935A (zh) * 2020-06-16 2021-12-17 中微半导体设备(上海)股份有限公司 耐腐蚀涂层形成方法和装置、等离子体零部件和反应装置
CN113808935B (zh) * 2020-06-16 2023-12-15 中微半导体设备(上海)股份有限公司 耐腐蚀涂层形成方法和装置、等离子体零部件和反应装置

Also Published As

Publication number Publication date
EP1070154A1 (en) 2001-01-24
AU3418899A (en) 1999-10-18
RU2224050C2 (ru) 2004-02-20
KR20010042128A (ko) 2001-05-25
AU746645C (en) 2003-02-20
WO1999050471A1 (en) 1999-10-07
AU746645B2 (en) 2002-05-02
CA2326202C (en) 2008-06-17
CA2326202A1 (en) 1999-10-07
JP2002509988A (ja) 2002-04-02

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C06 Publication
PB01 Publication
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SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: N.V. BURKHARD CO., LTD.

Free format text: FORMER OWNER: UNIV GENT

Effective date: 20050204

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20050204

Address after: Weaver, Belgium

Applicant after: Bekaert Sa NV

Address before: Ghent

Applicant before: Universiteit Gent

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication