CN1288505C - 用于改善光刻装置中线宽控制的系统和方法 - Google Patents

用于改善光刻装置中线宽控制的系统和方法 Download PDF

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Publication number
CN1288505C
CN1288505C CNB031222374A CN03122237A CN1288505C CN 1288505 C CN1288505 C CN 1288505C CN B031222374 A CNB031222374 A CN B031222374A CN 03122237 A CN03122237 A CN 03122237A CN 1288505 C CN1288505 C CN 1288505C
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CN
China
Prior art keywords
aperture
electromagnetic energy
shape
illumination
optical
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Expired - Fee Related
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CNB031222374A
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English (en)
Chinese (zh)
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CN1453644A (zh
Inventor
詹姆斯·G·查考耶尼斯
斯科特·D·考斯顿
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ASML US Inc
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ASML US Inc
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Publication of CN1453644A publication Critical patent/CN1453644A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB031222374A 2002-04-23 2003-04-23 用于改善光刻装置中线宽控制的系统和方法 Expired - Fee Related CN1288505C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/127,505 US6888615B2 (en) 2002-04-23 2002-04-23 System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
US10/127,505 2002-04-23

Publications (2)

Publication Number Publication Date
CN1453644A CN1453644A (zh) 2003-11-05
CN1288505C true CN1288505C (zh) 2006-12-06

Family

ID=28790941

Family Applications (1)

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CNB031222374A Expired - Fee Related CN1288505C (zh) 2002-04-23 2003-04-23 用于改善光刻装置中线宽控制的系统和方法

Country Status (7)

Country Link
US (1) US6888615B2 (https=)
EP (1) EP1357430A3 (https=)
JP (1) JP2003338459A (https=)
KR (1) KR100733547B1 (https=)
CN (1) CN1288505C (https=)
SG (1) SG105575A1 (https=)
TW (1) TWI278725B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842223B2 (en) 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination
US7206652B2 (en) * 2004-08-20 2007-04-17 International Business Machines Corporation Method and system for intelligent automated reticle management
CN100353508C (zh) * 2004-12-08 2007-12-05 上海华虹Nec电子有限公司 一种精确控制铝线宽的方法
EP1866700A1 (en) 2005-03-15 2007-12-19 Carl Zeiss SMT AG Projection exposure method and projection exposure system therefor
US7525645B2 (en) * 2005-06-29 2009-04-28 Samsung Electronics Co., Ltd. Exposure apparatus and method, and mask stage therefor
KR100780863B1 (ko) 2005-06-29 2007-11-29 삼성전자주식회사 노광 장치 및 방법, 그리고 이에 사용되는 마스크 스테이지
US7934172B2 (en) 2005-08-08 2011-04-26 Micronic Laser Systems Ab SLM lithography: printing to below K1=.30 without previous OPC processing
US20090213354A1 (en) * 2005-08-08 2009-08-27 Micronic Laser Systems Ab Method and apparatus for projection printing
US7382438B2 (en) * 2005-08-23 2008-06-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070109520A1 (en) * 2005-11-17 2007-05-17 Whitney Theodore R Modular illuminator for a scanning printer
KR101232234B1 (ko) * 2007-06-21 2013-02-12 에이에스엠엘 네델란즈 비.브이. 클램핑 디바이스 및 대상물 로딩 방법
US10761430B2 (en) * 2018-09-13 2020-09-01 Applied Materials, Inc. Method to enhance the resolution of maskless lithography while maintaining a high image contrast

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
JPS6461716A (en) 1987-08-31 1989-03-08 Canon Kk Illuminator
JPH05217855A (ja) 1992-02-01 1993-08-27 Nikon Corp 露光用照明装置
JP3278896B2 (ja) 1992-03-31 2002-04-30 キヤノン株式会社 照明装置及びそれを用いた投影露光装置
US5329336A (en) 1992-07-06 1994-07-12 Nikon Corporation Exposure method and apparatus
JP2917704B2 (ja) 1992-10-01 1999-07-12 日本電気株式会社 露光装置
US5724122A (en) * 1995-05-24 1998-03-03 Svg Lithography Systems, Inc. Illumination system having spatially separate vertical and horizontal image planes for use in photolithography
US5631721A (en) * 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
US6259513B1 (en) * 1996-11-25 2001-07-10 Svg Lithography Systems, Inc. Illumination system with spatially controllable partial coherence
US6628370B1 (en) * 1996-11-25 2003-09-30 Mccullough Andrew W. Illumination system with spatially controllable partial coherence compensating for line width variances in a photolithographic system
US5896188A (en) * 1996-11-25 1999-04-20 Svg Lithography Systems, Inc. Reduction of pattern noise in scanning lithographic system illuminators
US5966202A (en) 1997-03-31 1999-10-12 Svg Lithography Systems, Inc. Adjustable slit
US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
JP3101613B2 (ja) * 1998-01-30 2000-10-23 キヤノン株式会社 照明光学装置及び投影露光装置
DE69931690T2 (de) * 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographischer Apparat
US6072852A (en) 1998-06-09 2000-06-06 The Regents Of The University Of California High numerical aperture projection system for extreme ultraviolet projection lithography
AU3754800A (en) * 1999-03-17 2000-10-04 Rochester Institute Of Technology Mofification of a projection imaging system with a non-circular aperture and a method thereof
JP2001319871A (ja) * 2000-02-29 2001-11-16 Nikon Corp 露光方法、濃度フィルタの製造方法、及び露光装置
JP4545874B2 (ja) * 2000-04-03 2010-09-15 キヤノン株式会社 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法
JP2002043214A (ja) 2000-07-26 2002-02-08 Toshiba Corp 走査型露光方法
JP4646367B2 (ja) * 2000-08-25 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US6573975B2 (en) 2001-04-04 2003-06-03 Pradeep K. Govil DUV scanner linewidth control by mask error factor compensation
US6784976B2 (en) * 2002-04-23 2004-08-31 Asml Holding N.V. System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control

Also Published As

Publication number Publication date
KR20030084658A (ko) 2003-11-01
SG105575A1 (en) 2004-08-27
CN1453644A (zh) 2003-11-05
US6888615B2 (en) 2005-05-03
US20030197842A1 (en) 2003-10-23
EP1357430A3 (en) 2005-09-07
TW200306466A (en) 2003-11-16
JP2003338459A (ja) 2003-11-28
TWI278725B (en) 2007-04-11
EP1357430A2 (en) 2003-10-29
KR100733547B1 (ko) 2007-06-28

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Termination date: 20190423