CN1282995C - Preparation of projective spots for laser welding - Google Patents
Preparation of projective spots for laser welding Download PDFInfo
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- CN1282995C CN1282995C CN 03111157 CN03111157A CN1282995C CN 1282995 C CN1282995 C CN 1282995C CN 03111157 CN03111157 CN 03111157 CN 03111157 A CN03111157 A CN 03111157A CN 1282995 C CN1282995 C CN 1282995C
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- inert gas
- laser
- salient point
- solder alloy
- alloy silk
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Abstract
The present invention relates to a preparation method for salient points of laser direct solder, which relates to the improvement of a preparation process for salient points of chip level encapsulation and flip-chip bonding. The existing preparation techniques for the salient points mainly comprises evaporation, electroplation, stenciling, metal jet, etc. The methods are all widely used, but, the methods all have defects and certain application limitation. The method of the present invention is realized in that firstly, an inert gas preheater is preheated with the preheating temperature of 150 to 400 DEG C; then, an inert gas source is provided with the flow rate of 1 to 30LPM, and the inert gas is filled in a workroom; simultaneously, a solder wire feeder runs to adjust the pulse duration of a laser heating source between 1 ms and 1s; the feeding speed of the solder wire feeder and the input energy of laser are controlled by a computer; the sizes and the disconnection frequency of droplets of the solder can be accurately controlled according to the sizes of the diameters of the salient points. The present invention has the advantages of high efficiency, low cost, simple manufacturing process, flexibility, high precision and wide adaptability.
Description
Technical field:
The present invention relates to the improvement of the stud bump making technology of wafer-level package, flip chip bonding.
Background technology:
The main trend of Electronic Packaging is miniaturization and low cost.Adapt to this trend, wafer-level package (CSP), flip chip bonding new technologies such as (FC) constantly are pushed out.Concerning wafer-level package, flip chip bonding etc., stud bump making is subjected to paying attention to widely as the indispensable technology in a top.How to seek the convex point production method that reliable connection can be provided and have cost advantage and become key in the packaging technology research.Existing stud bump making technology mainly contains evaporation, plating, mould printing, metal jet (MJT) etc.These methods all are widely used, but all have deficiency, and certain application limitations is arranged: evaporation process cost height, and because tin is different with plumbous amounts of pressurized gaseous, therefore can't evaporates and make eutectic tin lead salient point.Because photoresist will be arranged, increased cost in the electroplating process, because the chemical property difference of tin, lead, the Composition Control of therefore electroplating salient point is relatively more difficult.Mould printing is used now widely, is that mainly its efficient height, solder paste composition range of choice are wide.But mould printing can't be used for the thin space stud bump making, can not satisfy encapsulation technology development requirement.The advantage of metal jet technology is that the formation of drop by digital control, does not need template or mask, only forms solder bump at the needs place, reduces the postorder operation, reduces cost the flexibility height.But the metal jet technical equipment is too complicated and heavy, is having much room for improvement aspect the drop stability simultaneously.
Summary of the invention:
For solving the deficiency that prior art exists, the invention provides a kind of method of directly making salient point with laser fusion solder alloy silk, this method should have the efficient height, cost is low, technology is simple, flexible, precision is high, adaptability is extensive characteristics.Method of the present invention is achieved in that at first with the preheating of inert gas preheater, preheat temperature is 150～400 ℃, open inert gas source then, its flow velocity is 1～30L/min, and make inert gas be full of the operating room, make solder wire feed machine running simultaneously and pulse duration of laser heating source is adjusted between 1ms～1s, solder wire feeds the feeding rate of machine and laser intake by computer control.Can accurately control the size of solder drop and disconnect frequency according to the size of salient point diameter.Described laser is for producing the neodymium doped yttrium aluminium garnet laser or the semiconductor laser of pulse laser; Described inert gas is a nitrogen; Described solder wire is tin-lead solder silk or solder alloy silk.It is heating source that the present invention selects laser for use, because laser has special nature: at first, laser has excellent directivity, but vernier focusing to the diameter point of 10 μ m only, this makes its can localized heating solder wire; Secondly, laser energy is high, and firing rate is fast, can very easily melt solder wire.The solder wire fusing forms the solder drop; drop is to spray under the protection of inert gas; require inert gas can prevent that the drop oxidation from preventing the too fast and premature solidification of drop heat dissipation simultaneously; therefore inert gas must have suitable flow and flow velocity; also enough temperature to be arranged, when drop arrives substrate, still keep certain temperature.By the temperature of control solder drop, make drop that enough energy heated substrates be arranged and be attached thereto, can obtain desired solder bump.In existing test, can make the different solder bump of diameter 25 μ m～1mm.The direct solder bump manufacture craft of laser is compared with method in the past, and salient point is made not must reflow process, directly forms solder bump, and in the method, the heat that carries by solder carries out localized heating, can not burn out substrate.Simultaneously, in the method, solder is put and the connection of substrate is finished simultaneously, and this process is very simple.Therefore the present invention has the efficient height, cost is low, technology is simple, flexible, precision is high and adaptability is extensive advantage.
Description of drawings:
Fig. 1 is the system schematic that the present invention directly makes salient point with laser fusion solder alloy silk.
Embodiment:
Embodiment one: present embodiment is achieved in that at first with the preheating of inert gas preheater, preheat temperature is 150～190 ℃, open inert gas source then, its flow velocity is 1～5L/min, and make inert gas be full of the operating room, make solder wire feed machine running simultaneously and pulse duration of laser heating source is adjusted between 1ms～160ms, solder wire feeds the feeding rate and the laser intake of machine, by computer control, can accurately control the size of solder drop and disconnect frequency according to the size of salient point diameter.
Embodiment two: the preheat temperature of inert gas is 191～230 ℃ in the present embodiment, and the flow velocity of inert gas is 6～10L/min, and the pulse duration of laser heating source is 161ms～320ms.
Embodiment three: the preheat temperature of inert gas is 231～270 ℃ in the present embodiment, and the flow velocity of inert gas is 11～15L/min, and the pulse duration of laser heating source is 321ms～480ms.
Embodiment four: the preheat temperature of inert gas is 271～310 ℃ in the present embodiment, and the flow velocity of inert gas is 16～20L/min, and the pulse duration of laser heating source is 481ms～640ms.
Embodiment five: the preheat temperature of inert gas is 311～350 ℃ in the present embodiment, and the flow velocity of inert gas is 21～25L/min, and the pulse duration of laser heating source is 641ms～800ms.
Embodiment six: the preheat temperature of inert gas is 351～400 ℃ in the present embodiment, and the flow velocity of inert gas is 26～30L/min, and the pulse duration of laser heating source is 801ms～1s.
Claims (10)
1, the method for directly making salient point with laser fusion solder alloy silk, it is characterized in that at first with the preheating of inert gas preheater, preheat temperature is 150～400 ℃, open inert gas source then, its flow velocity is 1～30L/min, and make inert gas be full of the operating room, and making solder wire feed machine running simultaneously and pulse duration of laser heating source is adjusted between 1ms～1s, solder wire feeds the feeding rate of machine and laser intake by computer control.
2, method of directly making salient point according to claim 1 with laser fusion solder alloy silk, the preheat temperature that it is characterized in that inert gas is 150～190 ℃, the flow velocity of inert gas is 1～5L/min, and the pulse duration of laser heating source is 1ms～160ms.
3, method of directly making salient point according to claim 1 with laser fusion solder alloy silk, the preheat temperature that it is characterized in that inert gas is 191～230 ℃, the flow velocity of inert gas is 6～10L/min, and the pulse duration of laser heating source is 161ms～320ms.
4, method of directly making salient point according to claim 1 with laser fusion solder alloy silk, the preheat temperature that it is characterized in that inert gas is 231～270 ℃, the flow velocity of inert gas is 11～15L/min, and the pulse duration of laser heating source is 321ms～480ms.
5, method of directly making salient point according to claim 1 with laser fusion solder alloy silk, the preheat temperature that it is characterized in that inert gas is 271～310 ℃, the flow velocity of inert gas is 16～20L/min, and the pulse duration of laser heating source is 481ms～640ms.
6, method of directly making salient point according to claim 1 with laser fusion solder alloy silk, the preheat temperature that it is characterized in that inert gas is 311～350 ℃, the flow velocity of inert gas is 21～25L/min, and the pulse duration of laser heating source is 641ms～800ms.
7, method of directly making salient point according to claim 1 with laser fusion solder alloy silk, the preheat temperature that it is characterized in that inert gas is 351～400 ℃, the flow velocity of inert gas is 26～30L/min, and the pulse duration of laser heating source is 801ms～1s.
8, method of directly making salient point with laser fusion solder alloy silk according to claim 1 is characterized in that described laser is for producing the neodymium doped yttrium aluminium garnet laser or the semiconductor laser of pulse laser.
9, method of directly making salient point with laser fusion solder alloy silk according to claim 1 is characterized in that described inert gas is a nitrogen.
10, method of directly making salient point with laser fusion solder alloy silk according to claim 1 is characterized in that described solder wire is tin-lead solder silk or solder alloy silk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03111157 CN1282995C (en) | 2003-03-11 | 2003-03-11 | Preparation of projective spots for laser welding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03111157 CN1282995C (en) | 2003-03-11 | 2003-03-11 | Preparation of projective spots for laser welding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1440066A CN1440066A (en) | 2003-09-03 |
| CN1282995C true CN1282995C (en) | 2006-11-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 03111157 Expired - Fee Related CN1282995C (en) | 2003-03-11 | 2003-03-11 | Preparation of projective spots for laser welding |
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| CN (1) | CN1282995C (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1328774C (en) * | 2005-01-12 | 2007-07-25 | 哈尔滨工业大学 | Tin ball maker by double electrothermal filament smelting and cutting method |
| CN1317751C (en) * | 2005-01-12 | 2007-05-23 | 哈尔滨工业大学 | Production of direct brazing filler metal button by double electrothermal filament smelting and cutting method |
| CN103235487B (en) * | 2013-03-28 | 2015-10-28 | 华中科技大学 | A kind of droplet target production method of laser plasma extreme ultraviolet light source and device thereof |
| CN108907393B (en) * | 2018-09-25 | 2021-01-26 | 长沙理工大学 | Automobile galvanized steel sheet lap welding method |
| CN108971687B (en) * | 2018-09-25 | 2021-01-26 | 长沙理工大学 | Welding method for steel sheet corner joint |
| CN108890061B (en) * | 2018-09-25 | 2021-01-26 | 长沙理工大学 | Diamond tool welding method |
| CN108907395B (en) * | 2018-09-25 | 2021-01-26 | 长沙理工大学 | Welding method for passenger car skin reinforcing ribs |
| CN108907394B (en) * | 2018-09-25 | 2021-01-26 | 长沙理工大学 | Steel-aluminum welding method for vehicle |
| CN108890059B (en) * | 2018-09-25 | 2021-01-26 | 长沙理工大学 | Aluminum alloy sheet welding method |
| CN108890058B (en) * | 2018-09-25 | 2021-01-26 | 长沙理工大学 | Welding method for elevator car reinforcing ribs |
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2003
- 2003-03-11 CN CN 03111157 patent/CN1282995C/en not_active Expired - Fee Related
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| CN1440066A (en) | 2003-09-03 |
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