CN110085521A - A kind of ultrasonic wave added plant column method for the encapsulation of CuCGA device - Google Patents
A kind of ultrasonic wave added plant column method for the encapsulation of CuCGA device Download PDFInfo
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- CN110085521A CN110085521A CN201910388328.8A CN201910388328A CN110085521A CN 110085521 A CN110085521 A CN 110085521A CN 201910388328 A CN201910388328 A CN 201910388328A CN 110085521 A CN110085521 A CN 110085521A
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- solder
- pad
- array
- copper post
- soldered ball
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- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000005538 encapsulation Methods 0.000 title claims abstract description 27
- 229910000679 solder Inorganic materials 0.000 claims abstract description 117
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 108
- 229910052802 copper Inorganic materials 0.000 claims abstract description 108
- 239000010949 copper Substances 0.000 claims abstract description 108
- 238000005476 soldering Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000004615 ingredient Substances 0.000 claims abstract description 19
- 230000005496 eutectics Effects 0.000 claims abstract description 18
- 238000005553 drilling Methods 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 230000006378 damage Effects 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 229910000831 Steel Inorganic materials 0.000 claims description 24
- 239000010959 steel Substances 0.000 claims description 24
- 238000002604 ultrasonography Methods 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000011135 tin Substances 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910001369 Brass Inorganic materials 0.000 claims description 6
- 229910000906 Bronze Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000010951 brass Substances 0.000 claims description 6
- 239000010974 bronze Substances 0.000 claims description 6
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 238000004886 process control Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910007637 SnAg Inorganic materials 0.000 claims description 4
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 claims description 4
- 229910008433 SnCU Inorganic materials 0.000 claims description 3
- 229910007116 SnPb Inorganic materials 0.000 claims description 3
- 229910006913 SnSb Inorganic materials 0.000 claims description 3
- 229910005728 SnZn Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000003801 milling Methods 0.000 abstract description 2
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 238000007796 conventional method Methods 0.000 abstract 1
- 238000010992 reflux Methods 0.000 description 6
- 238000005219 brazing Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 241001074085 Scophthalmus aquosus Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3447—Lead-in-hole components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8121—Applying energy for connecting using a reflow oven
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
A kind of ultrasonic wave added plant column method for the encapsulation of CuCGA device, is related to microelectronic packaging technology field.The problems such as easily appearance bad, the solder joint stomata of heat transfer and welding column scratch is influenced to solve conventional method device plant column quality by auxiliary mould.The present invention prints the solder(ing) paste of eutectic solder ingredient on the pad of chip carrier substrate and printed circuit board array arrangement, and realizes the plant ball on pad by Reflow Soldering；Miniature precision drilling machine is recycled to form the location hole of identical size in array soldered ball；After in the location hole for the soldered ball that the copper post inserting of same size to both ends base plate array is arranged, realize that the two-sided plant column of array copper post connects using the method for ultrasonic wave added solid-liquid reaction milling solder reflow weldering.Ultrasonic cavitation can promote the counterdiffusion of the destruction of copper post surface film oxide, the micro flow of solder and interface atoms, can refine solder tissue, reduce the porosity and improve strength of joint.CuCGA device of the present invention for no mold to assist plants column.
Description
Technical field
The present invention relates to microelectronic packaging technology fields, and in particular to a kind of ultrasonic wave added for the encapsulation of CuCGA device
Plant column method.
Background technique
In Area array packages, CuCGA (Ceramic Copper Column Grid Array) encapsulation is because of array brazing
Column has higher height and bigger flexibility, therefore has more preferably compared with CBGA (Ceramic Ball Grid Array) encapsulation
Heat-sinking capability and the internal stress of interconnection structure can be released effectively by the deflection deformation of copper post, therefore there is higher heat to follow
The ring service life.CuCGA encapsulation is widely used in high-frequency, high power, the large chip encapsulation of high I/O and the boat of high reliability request
Sky, space flight, the encapsulation of military project electronic device.
Copper post is by array arrangement and the process that is connected perpendicularly on the pad of array arrangement is known as planting column.But copper post draw ratio
Greatly, the feature of stability difference makes the difficulty of the plant column technique of CuCGA device much larger than the plant ball technique of CBGA device.Current
Column technique is planted, mostly overlapped by the mold with array hole or multiple layer metal steel mesh and is arranged before briquetting is welded and welding process
The fixation to relative position is neutralized of middle copper post and pad；It is realized on array copper post one end and chip carrier substrate using Reflow Soldering
After connection between array pad, need to remove on the mold with array hole or multiple layer metal steel mesh.Existing plant column method exists
Following problem:
Preset clearance needed for postwelding mold or the disassembly of metal steel mesh is (between mold or the internal diameter and copper post outer diameter in steel mesh hole
Gap) presence make the verticality of copper post, be deteriorated to moderate and fixed effect.Postwelding mold or steel mesh are also easy to scrape when dismantling
Hurt brazing column, welding column is made to bend, causes to plant column quality and the coplanarity of array welding column end face is difficult to ensure.Meanwhile it welding
The presence of mold or metal steel mesh, which also will affect heat from heat source and effectively be transmitted in each welding position and solder(ing) paste, in journey helps weldering
Agent gas distributes, and leads to the debugging difficulty increasing and the increase of the solder joint porosity of reflow soldering process.In addition, the weldering of different components
Disk spacing is different with welding column quantity, it is also necessary to make the mold or steel mesh of different size, cost of manufacture is also very high.CuCGA device
Plant column problem have become the high reliability device popularization and application bottleneck.
In addition, the plant column method is only completed the connection on array copper post one end and chip carrier substrate between array pad,
It also needs that the array pad on the other end and printed circuit board of array copper post is formed connection again by Reflow Soldering later, is anti-
Only the solder melt solder balls of first time Reflow Soldering and copper post relative position change during second of Reflow Soldering, need to flow back for the first time
The fusing point for the solder in solder(ing) paste that weldering uses is higher, welding temperature is higher.The thermal shock that this causes structure to be born is also big, and
Copper post both ends cannot use the solder of identical type and ingredient, and manufacture craft is also cumbersome.
Summary of the invention
The present invention is assisted in order to which the plant column difficulty for solving array copper post in existing CuCGA device encapsulation is big, plants column quality
Mold influences big and is easy to appear bad welding heat transfer, solder joint stomata and welding column and scratches the problems such as impaired.
A kind of ultrasonic wave added plant column method for the encapsulation of CuCGA device, comprising the following steps:
Step 1, the solder(ing) paste that eutectic solder ingredient is printed on the pad of array arrangement；
Step 2 passes through the plant ball on the pad of Reflow Soldering realization array arrangement；
Step 3 forms location hole in single soldered ball:
The steel drill bit that diameter is d is clamped in the collet of miniature high-precision drilling machine, is welded by process control column to be planted
Substrate motion where disk, make column pad to be planted be located at immediately below drill bit and with the centering of drill bit axle center, driven followed by drilling machine
Soldered ball on column pad to be planted move bit simultaneously, pushes and is pierced in soldered ball after scheduled depth S after drill bit, lifts brill
Head, in single soldered ball formed depth be S, the location hole that diameter is d；
The formation of step 4, location hole in array soldered ball:
It is repeated the above steps 3 process with identical dimensional parameters and technological parameter, in chip carrier substrate and printing electricity
The location hole of same depth and diameter is obtained on the plate of road in each soldered ball of array arrangement；
Step 5, the inserting of array copper post are into the location hole in the soldered ball on the pad of array arrangement on the substrate of both ends:
One end of the copper post of same size is inserted into one by one in the soldered ball on printed circuit board on the pad of array arrangement
Location hole in, it is ensured that it is completely embedded into location hole bottom and keeps the bared end of array copper post coplanar；Again by array copper post
The location hole in soldered ball on bared end and chip carrier substrate on the pad of array arrangement centering and applies appropriate pressure one by one
It is set to be completely embedded into location hole bottom；
Step 6, ultrasonic wave added Reflow Soldering realize the two-sided plant column connection of array copper post:
Encapsulating structure after inserting assembly is placed in Hot-blast Heating area, heats encapsulation according to the thermal reflow profile of design
Structure, after technological temperature is more than the solidus temperature of solder in soldered ball, in four special metal coating areas of printed circuit board
Apply ultrasound；Stop applying ultrasound after below the solidus temperature that Reflow Soldering later period, soldered ball temperature are down to solder.
During column is planted in Reflow Soldering, during soldered ball is in solid-liquid humidity province, the spatial position of copper post and soldered ball is closed
System will not change；Meanwhile ultrasonic vibration by the coat of metal under printed circuit board solder mask be transferred to array arrangement pad and
Thereon in the solder in solid-liquid state, ultrasonic cavitation can accelerate destruction and the solder of the oxidation film on copper post surface
Micro flow, be reliably connected the interface of copper post and solder by the counterdiffusion of atom formation.
Preferably, the pad of the array arrangement is the pad and chip carrier substrate of array arrangement on printed circuit board
The pad of upper array arrangement.
Preferably, the material of the pad of the array arrangement be copper, it is gold, silver, nickel, tin bronze, any one in brass
Kind, or the metal multilayer film pad formed by copper, gold, silver, nickel, tin bronze, brass matched combined.
Preferably, the diameter of the pad of the array arrangement is D, 0.9mm≤D≤3mm, the pad of the array arrangement
With a thickness of 35 μm~100 μm.
Preferably, the solder type in the solder(ing) paste of eutectic solder ingredient described in step 1 is SnPb system, SnCu
System, SnAg system, SnAgCu system, SnBi system, SnZn system, SnSb system, eutectic ingredient of SnIn system soft solder in it is any one
Kind, and the corresponding solidus of eutectic ingredient solder and liquidus temperature difference are more than or equal to 40 DEG C.
Preferably, it is solder(ing) paste solder liquidus curve or more that the peak temperature range of ball technique is planted in Reflow Soldering described in step 2
20 DEG C~30 DEG C, high-temperature residence time is 100 seconds.
Preferably, the ball height h that plant ball technique is formed described in step 2 is more than or equal to the 7/10 of pad diameter D.
Preferably, the diameter of steel drill bit described in step 3 is d, and the diameter of the location hole of acquisition is also d,D is the diameter of the pad of array arrangement on printed circuit board and chip carrier substrate.
Preferably, the depth of location hole described in step 3 is S,H is ball height.
Preferably, copper post described in step 5 is the oxygen-free copper copper post of the unified specification size of establishing criteria preparation.
Preferably, the diameter of copper post described in step 5 is d1,D is pad diameter, and d is steel
The diameter of drill bit.
Preferably, the length of copper post described in step 5 is l, l=6~12d1, d1For the diameter of copper post.
Preferably, the thermal reflow profile of design described in step 6 is characterized in, Reflow Soldering peak temperature range is pricker
15 DEG C below more than the solidus of material 5 DEG C~solder liquidus curve, the range of the residence time under peak temperature is 120~180 seconds.
Preferably, four special metal coating areas of application ultrasound described in step 6 are pre-designed, are located at printing electricity
On the plate of road the periphery 0.5mm distance of the pad of array arrangement, corresponding four side side length of pad array center, with it is neighbouring
Pad is connected and the identical copper coating area of thickness.
Preferably, application described in step 6 ultrasound power bracket be 400~800W, ultrasonic frequency range be 30~
40KHz, ultrasonic pressure are 0.15~0.3MPa.
The invention has the following advantages:
First, the plant column connection at the both ends of array copper post of the present invention is disposable to be realized, plants copper post under column method with tradition
Both ends need to realize that connection is different by Reflow Soldering twice, and the fusing point for not needing the solder in the substrate pads of two sides has centainly
The difference of amplitude.Solder on printed circuit board and chip carrier substrate pad can be used the solder of identical type and ingredient, and two
Grade encapsulation need not use more dystectic solder, need not also undergo the Reflow Soldering of more high peak temperature accordingly.
Second, the plant column connection at the both ends of array copper post of the present invention is disposable to be realized, is planted and is not required to borrow in column connection procedure
The relative position for helping the auxiliary devices such as mold or the metal steel mesh with array hole to carry out array copper post is fixed, therefore is returned there is no column is planted
Heat from heat source transmitting is stopped by mold or steel mesh in stream connection, welding procedure difficulty is debugged and then influences the problem of planting column quality.
Third, the plant column connection at the both ends of array copper post of the present invention is disposable to be realized, is planted and is not required to borrow in column connection procedure
The position for helping the auxiliary devices such as mold or the metal steel mesh with array hole to carry out array copper post is fixed, therefore is connected there is no column reflux is planted
Connect mold or steel mesh hinder effectively distributing for scaling powder gas in solder(ing) paste and caused by the increase of the solder joint porosity the problem of, this
The solder joint porosity after the copper post plant column of invention can be down to 0%.
4th, the plant column connection at the both ends of array copper post of the present invention is disposable to be realized, is planted and is not required to borrow in column connection procedure
Help the auxiliary devices such as mold or the metal steel mesh with array hole carry out array copper post relative position fix, therefore there is no welding column because
Auxiliary plants the postwelding disassembly of column device and leads to the problem of scratch and bending and then influence to plant column quality.
5th, the plant column connection at the both ends of array copper post of the present invention is disposable to be realized, is planted and is not required to borrow in column connection procedure
The relative position for helping the auxiliary devices such as mold or the metal steel mesh with array hole to carry out array copper post is fixed, and every kind of array is not present
The problem of manufacturing cost greatly increases caused by a set of high-precision auxiliary mould device of device customization of specification.Suitable for a variety of rule
The production of lattice device.
6th, the present invention plants the position degree of welding column after column by process control drill bit and pad and the centering of soldered ball thereon
Good, therefore planting column quality and sold joint quality can significantly improve.
7th, plant column process of the invention can be while holding copper post positional relationship orthogonal with pad, also
It can accelerate the destruction of the oxidation film on copper post surface and the micro flow of solder by the ultrasonic cavitation during Reflow Soldering, promote
It is reliably connected into the interface of copper post and soldered ball by diffuseing to form for atom.With no ultrasonic wave added, in solder solid-liquid reaction milling
The method of two-sided plant column of once flowing back is compared, and stomata, the cracking frequency at copper post and solder interface can be down to 0%, bonding strength
It can be improved 15% or more, reached the bonding strength water that 20 DEG C~40 DEG C more than solder liquidus curve of normal reflux weldering obtains
It is flat.
8th, the present invention uses the solder of eutectic ingredient, if the temperature difference of the liquidus temperature of solder and solid, liquid phase line
It is sufficiently large, it can be planted on chip carrier substrate and carry out chip after ball again fixed to the connection on chip carrier substrate, plant weldering
Ball will not be completely melt during chip is fixedly connected and fall off that chip can also plant high Reflow Soldering when ball from high-melting-point solder
The impact of temperature.
Detailed description of the invention
The structural schematic diagram that Fig. 1 interconnects for the single welding column of CuCGA device after ultrasonic wave added Reflow Soldering plant column.In Fig. 1,1
For printed circuit board；2 be chip carrier substrate；3 be the pad on printed circuit board and chip carrier substrate；4 be solder soldered ball；
5 be copper post.
Specific embodiment
Specific embodiment 1:
A kind of ultrasonic wave added plant column method for the encapsulation of CuCGA device, comprising the following steps:
Step 1, the solder(ing) paste that eutectic solder ingredient is printed on the pad of array arrangement:
It is identical as traditional BGA plant ball technique, it is borrowed on the pad of printed circuit board and the array arrangement of chip carrier substrate
The solder(ing) paste of eutectic solder ingredient of the ripe stencil print process printing sufficient amount of furtherance；
Step 2 realizes the plant ball on printed circuit board and chip carrier substrate on the pad of array arrangement by Reflow Soldering:
Solder(ing) paste on printed circuit board and chip carrier substrate on the pad of array arrangement is heated fusing, in solder(ing) paste
Scaling powder removal pad on oxidation film, the solder in solder(ing) paste soaks on pad, and shape under the action of surface tension
At the soldered ball of array arrangement；
Step 3 forms location hole in single soldered ball:
The steel drill bit that diameter is d is clamped in the collet of miniature high-precision drilling machine, is welded by process control column to be planted
Substrate motion where disk makes column pad to be planted be located at drill bit underface and the axle center centering with drill bit, followed by drilling machine band
Soldered ball while dynamic bit on column pad to be planted move, pushes and is pierced in soldered ball after scheduled depth S after drill bit, is mentioned
Rise drill bit, in single soldered ball formed depth be S, the location hole that diameter is d；
The formation of step 4, location hole in array soldered ball:
Repeated the above steps 3 process with identical dimensional parameters and technological parameter, one by one drilling chip carrier substrate and
Soldered ball on printed circuit board on the pad of array arrangement, and in each soldered ball obtain same depth and diameter location hole；
The both ends inserting of step 5, array copper post is to the location hole in the soldered ball on the pad of array arrangement on the substrate of both ends
In:
One end of the copper post of same size is inserted into one by one in the soldered ball on printed circuit board on the pad of array arrangement
Location hole in, it is ensured that it is completely embedded into location hole bottom and keeps the bared end of array copper post coplanar；Again by array copper post
The location hole in soldered ball on bared end and chip carrier substrate on the pad of array arrangement centering and applies appropriate pressure one by one
It is set to be completely embedded into location hole bottom；
Step 6, ultrasonic wave added Reflow Soldering realize the two-sided plant column connection of array copper post:
Encapsulating structure after inserting assembly is placed in Hot-blast Heating area, the 5 DEG C~liquid phase more than the solidus of soldered ball solder
Below line within the temperature range of 15 DEG C be arranged Reflow Soldering peak temperature and at the peak temperature stop 120 seconds~180 seconds into
Row reflow soldering.During column is planted in the Reflow Soldering, soldered ball is in solid-liquid temperature range, the spatial position pass of copper post and soldered ball
System will not change, it is ensured that copper post both ends are vertically connected to the array pad of two sides chip carrier substrate and printed circuit board
On.Meanwhile in the reflow process, after technological temperature is more than the solidus temperature of solder, in four spies of printed circuit board
Determine coat of metal area and applies ultrasound.Ultrasonic vibration is transferred to the weldering of array arrangement by the coat of metal under printed circuit board solder mask
In disk and the thereon solder in solid-liquid state, the oxidation film on copper post surface is destroyed under ultrasonic cavitation, solder
The interface of micro flow aggravation, copper post and solder is diffuseed to form by atom to be reliably connected.In the Reflow Soldering later period, soldered ball temperature drop
After below to the solidus temperature of solder, ultrasound, which applies, to be stopped.
The present invention can be used for realizing the Area array packages and large chip Area array packages of high reliability request
The plant column of array copper post connects.
Specific embodiment 2:
The material of the pad of array arrangement described in present embodiment is copper, gold, silver, nickel, tin bronze, any in brass
One kind, or the metal multilayer film pad formed by copper, gold, silver, nickel, tin bronze, brass matched combined, are also possible to other tinbases
Soft solder on it can good wet one of metal or alloy.
Other steps and parameter are same as the specific embodiment one.
Specific embodiment 3:
The diameter of the pad of array arrangement described in present embodiment be D, 0.9mm≤D≤3mm, the array arrangement
Pad with a thickness of 35 μm~100 μm.
Other steps and parameter are the same as one or two specific embodiments.
Specific embodiment 4:
Solder type in the solder(ing) paste of eutectic solder ingredient described in present embodiment step 1 be SnPb system,
SnCu system, SnAg system, SnAgCu system, SnBi system, SnZn system, SnSb system, eutectic ingredient of SnIn system soft solder in appoint
It anticipates one kind, and the corresponding solidus of eutectic ingredient solder and liquidus temperature difference are more than or equal to 40 DEG C, are also possible to it
One of the tin-base soft solder of his the eutectic ingredient of solidus and liquidus temperature difference more than or equal to 40 DEG C.
Other steps and parameter are identical as one of specific embodiment one to three.
Specific embodiment 5:
The range that the peak temperature of ball technique is planted in Reflow Soldering described in present embodiment step 2 is solder(ing) paste solder liquidus curve
Above 20 DEG C~30 DEG C, the residence time under peak temperature is 100 seconds.
Other steps and parameter are identical as one of specific embodiment one to four.
Specific embodiment 6:
The ball height h that plant ball technique is formed described in present embodiment step 2 is more than or equal to the 7/10 of pad diameter D.
Other steps and parameter are identical as one of specific embodiment one to five.
Specific embodiment 7:
The depth of location hole described in present embodiment step 3 is S,H is ball height.
Other steps and parameter are identical as one of specific embodiment one to six.
Specific embodiment 8:
The diameter of steel drill bit described in present embodiment step 3 is d, and the diameter of the location hole of acquisition is also d,D is the diameter of the pad of array arrangement on printed circuit board and chip carrier substrate.
Other steps and parameter are identical as one of specific embodiment one to seven.
Specific embodiment 9:
Copper post described in present embodiment step 5 is the oxygen-free copper copper post of the unified specification size of establishing criteria preparation, and
Diameter d1It is identical as the diameter d of the steel drill bit described in step 3, and length l=6~12d of copper post1, d1For copper post diameter.
Other steps and parameter are identical as one of specific embodiment one to eight.
Specific embodiment 10:
Reflow Soldering peak temperature range described in present embodiment step 6 is 5 DEG C~liquidus curve of the solidus of solder or more
15 DEG C below, the range of the residence time under peak temperature is 120~180 seconds.
Other steps and parameter are identical as one of specific embodiment one to nine.
Specific embodiment 11:
Four special metal coating areas of application ultrasound described in present embodiment step 6 are pre-designed, are located at print
On printed circuit board the periphery 0.5mm distance of the pad of array arrangement, corresponding four side side length of pad array center, with
Adjacent pads are connected and the identical copper coating area of thickness.
Other steps and parameter are identical as one of specific embodiment one to ten.
Specific embodiment 12:
The power bracket of the ultrasound of application described in present embodiment step 6 is 400~800W, ultrasonic frequency range 30
~40KHz, ultrasonic pressure are 0.15~0.3MPa.
Other steps and parameter are identical as specific embodiment one to one of 11.
Embodiment
Embodiment 1:
For the second level package interconnection process of CuCGA device, a kind of ultrasound for the encapsulation of CuCGA device of the present invention
Auxiliary plants column method, comprising the following steps:
Step 1: chip carrier substrate is identical with the oxygen-free copper pad size on printed circuit board, according to design standard, system
The copper post of the oxygen-free copper of the standby unified specification size for meeting pad diameter D, copper post diameter are d1(D is pad
Diameter), height of the copper pillar l, draw ratio 8；
Step 2: printing the solder(ing) paste of eutectic solder ingredient on the pad of array arrangement:
It is identical as traditional BGA plant ball technique, it is borrowed on the pad of printed circuit board and the array arrangement of chip carrier substrate
Stencil print process is helped to print Sn22Bi solder(ing) paste, the number to be printed of solder(ing) paste should be such that the ball height h after Reflow Soldering is more than or equal to
7/10 times of pad diameter D；
Step 3: realizing the plant ball on the pad of array arrangement by Reflow Soldering:
Solder(ing) paste is carried out using conventional equipment and setting normal reflux technological temperature curve to carry in printed circuit board and chip
Reflow soldering on the array arrangement pad of structure base board, wherein the peak temperature of reflux technique curve is solder liquidus curve or more
30 DEG C, the peak temperature residence time is 100 seconds, and solder(ing) paste soaks on pad and formed array soldered ball, plants ball technique and completes；
Step 4: forming location hole in single soldered ball:
By diameter be d (D is pad diameter, d1For copper post diameter) steel drill bit be clamped in it is micro-
In the collet of type high-precision drilling machine, by the substrate motion where process control column pad to be planted, it is located at column pad to be planted and bores
Head underface and the axle center centering with drill bit drive soldered ball of the bit simultaneously on column pad to be planted to transport followed by drilling machine
It is dynamic, scheduled depth in soldered ball is pierced to drill bit pushingAfter (h is ball height), lift drill bit, in single soldered ball
Formed depth be S, the location hole that diameter is d；
Step 5: the formation of the location hole in array soldered ball:
Repeated the above steps four process with identical dimensional parameters and technological parameter, one by one drilling chip carrier substrate and
Soldered ball on printed circuit board on the pad of array arrangement, and guarantee that the depth of the location hole obtained is identical with diameter；
Step 6: array arrangement on the both ends plugging in fitting of array copper post to both ends chip carrier substrate and printed circuit board
Soldered ball location hole in:
One end of the copper post of identical size is inserted into the location hole on printed circuit board in the soldered ball of array arrangement one by one
In, and ensure that it is completely embedded into location hole bottom so that the bared end of array copper post is coplanar；Again by the bared end of array copper post
With the location hole centering in the soldered ball of array arrangement on chip carrier substrate and applying appropriate pressure makes it be completely embedded into positioning
Hole bottom；
Step 7: the two-sided plant column connection of array copper post is realized in ultrasonic wave added Reflow Soldering:
Encapsulating structure after inserting assembly is placed in Hot-blast Heating area, the peak temperature that Reflow Soldering is arranged is Sn22Bi solder
More than the solidus of soldered ball 35 DEG C, and progress reflow soldering in 150 seconds is stopped at the peak temperature.The column phase is planted in the Reflow Soldering
Between, soldered ball is in solid-liquid temperature range, and the spatial relation of copper post and soldered ball will not change, it is ensured that copper post both ends quilt
It is vertically connected on the array pad of two sides chip carrier substrate and printed circuit board.Meanwhile in the reflow process, work as work
After skill temperature is more than the solidus temperature of solder, apply ultrasound in four special metal coating areas of printed circuit board.Apply
The power of ultrasound is 500W, supersonic frequency 30KHz, ultrasonic pressure 0.2MPa.Ultrasonic vibration is by printed circuit board solder mask
Under the coat of metal be transferred to array arrangement pad and thereon in solid-liquid state solder in, in ultrasonic cavitation
The oxidation film on lower copper post surface is destroyed, the aggravation of solder micro flow, and the interface of copper post and solder is diffuseed to form by atom can
By connection.In the Reflow Soldering later period, after soldered ball temperature is down to the solidus temperature of solder or less, ultrasound, which applies, to be stopped.Pricker in soldered ball
After expecting solidification and crystallization and being cooled to room temperature, plants column process and complete.
Linkage interface peak temperature in the present embodiment between copper post/solder is 173 DEG C, relatively conventional plant column connection method
Peak value heating temperature (260 DEG C) about reduces by 90 DEG C, and the thermal shock degree in connection procedure substantially reduces, the group caused by micro-structure
It knits deterioration and mechanical damage degree necessarily substantially reduces.Meanwhile ultrasonic application can refine the pricker in soldered ball in connection procedure
Material tissue simultaneously promotes interface atoms diffusion and the formation of interface articulamentum, the incidence for reducing stomata, can get good connection
Intensity.
Embodiment 2:
For the second level package interconnection process of CuCGA device, a kind of ultrasound for the encapsulation of CuCGA device of the present invention
Auxiliary plants column method, comprising the following steps:
Step 1: chip carrier substrate is identical with the oxygen-free copper pad size on printed circuit board, according to design standard, system
The oxygen-free copper copper post of the standby unified specification size for meeting pad diameter D, copper post diameter are d1(D is that pad is straight
Diameter), height of the copper pillar l, draw ratio 10；
Step 2: printing the solder(ing) paste of eutectic solder ingredient on the pad of array arrangement:
It is identical as traditional BGA plant ball technique, it is borrowed on the pad of printed circuit board and the array arrangement of chip carrier substrate
Stencil print process is helped to print Sn2.0Cu solder(ing) paste, the number to be printed of tin cream should make the ball height h after Reflow Soldering be more than or equal to 7/
10 times of pad diameter D；
Step 3: realizing the plant ball on the pad of array arrangement by Reflow Soldering:
Solder(ing) paste is carried out using conventional equipment and setting normal reflux technological temperature curve to carry in printed circuit board and chip
Reflow soldering on the array arrangement pad of structure base board, wherein the peak temperature of reflux technique curve is Sn2.0Cu solder liquid phase
More than line 25 DEG C, the peak temperature residence time is 100 seconds, and solder(ing) paste soaks on pad and formed array soldered ball, plants ball technique
It completes；
Step 4: forming location hole in single soldered ball:
By diameter be d (D is pad diameter, d1For copper post diameter) steel drill bit be clamped in it is micro-
In the collet of type high-precision drilling machine, by the substrate motion where process control column pad to be planted, it is located at column pad to be planted and bores
Head underface and the axle center centering with drill bit drive soldered ball of the bit simultaneously on column pad to be planted to transport followed by drilling machine
It is dynamic, scheduled depth in soldered ball is pierced to drill bit pushingAfter (h is ball height), lift drill bit, in single soldered ball
Formed depth be S, the location hole that diameter is d.
Step 5: the formation of the location hole in array soldered ball:
Repeated the above steps four process with identical dimensional parameters and technological parameter, one by one drilling chip carrier substrate and
Soldered ball on printed circuit board on the pad of array arrangement, and guarantee that the depth of the location hole obtained is identical with diameter；
Step 6: array arrangement on the both ends plugging in fitting of array copper post to both ends chip carrier substrate and printed circuit board
Soldered ball location hole in；
One end of the copper post of identical size is inserted into the positioning on chip carrier substrate in the soldered ball of array arrangement one by one
Kong Zhong, and ensure that it is completely embedded into location hole bottom so that the bared end of array copper post is coplanar；Again by the exposing of array copper post
End with printed circuit board on array arrangement soldered ball in location hole centering and applying appropriate pressure makes it be completely embedded into positioning
Hole bottom；
Step 7: the two-sided plant column connection of array copper post is realized in ultrasonic wave added Reflow Soldering:
Encapsulating structure after inserting assembly is placed in Hot-blast Heating area, the peak temperature that Reflow Soldering is arranged is Sn2.0Cu pricker
Expect 30 DEG C of the solidus of soldered ball or more, and stops progress reflow soldering in 180 seconds at the peak temperature.The column phase is planted in the Reflow Soldering
Between, soldered ball is in solid-liquid temperature range, and the spatial relation of copper post and soldered ball will not change, it is ensured that copper post both ends quilt
It is vertically connected on the array pad of two sides chip carrier substrate and printed circuit board.Meanwhile in the reflow process, work as work
After skill temperature is more than the solidus temperature of solder, apply ultrasound in four special metal coating areas of printed circuit board.Apply
The power bracket of ultrasound is 550W, ultrasonic frequency range 35KHz, ultrasonic pressure 0.25MPa.Ultrasonic vibration is by printed circuit
The coat of metal under plate solder mask is transferred to the pad of array arrangement and is in the solder of solid-liquid state thereon, in ultrasound
The oxidation film on copper post surface is destroyed under cavitation, the aggravation of solder micro flow, and the interface of copper post and solder is expanded by atom
Scattered formation is reliably connected.In the Reflow Soldering later period, after soldered ball temperature is down to the solidus temperature of solder or less, ultrasound, which applies, to be stopped.
Solder solidification and crystallization and after being cooled to room temperature in soldered ball, plants column process and completes.
Copper post both ends are all made of the Sn2.0Cu lead-free brazing of identical material in the present embodiment, with common SnAg system,
The lead-free brazings such as SnAgCu system are substantially reduced compared to brazing filler metal cost, and the linkage interface peak temperature between copper post/solder is 257
DEG C, it is very close with conventional (260 DEG C) of peak value heating temperature for planting column connection method, realize the two-sided of no mold auxiliary positioning
It is disposable to plant column connection.Ultrasonic application can refine the solder tissue in soldered ball and interface atoms is promoted to spread in connection procedure
With the formation of interface articulamentum, and the incidence of stomata can be reduced, can get good bonding strength.
Claims (10)
1. a kind of ultrasonic wave added for the encapsulation of CuCGA device plants column method, which comprises the following steps:
Step 1, the solder(ing) paste that eutectic solder ingredient is printed on the pad of array arrangement；
Step 2 passes through the plant ball on the pad of Reflow Soldering realization array arrangement；
Step 3 forms location hole in single soldered ball:
The steel drill bit that diameter is d is clamped in the collet of miniature high-precision drilling machine, process control column pad institute to be planted is passed through
Substrate motion, make column pad to be planted be located at immediately below drill bit and with the centering of drill bit axle center, drive drill bit followed by drilling machine
Soldered ball on column pad to be planted move simultaneously for rotation, pushes and is pierced in soldered ball after scheduled depth S after drill bit, lifts drill bit,
In single soldered ball formed depth be S, the location hole that diameter is d；
The formation of step 4, location hole in array soldered ball:
It is repeated the above steps 3 process with identical dimensional parameters and technological parameter, in chip carrier substrate and printed circuit board
The location hole of same depth and diameter is obtained in each soldered ball of upper array arrangement；
Step 5, the inserting of array copper post are into the location hole in the soldered ball on the pad of array arrangement on the substrate of both ends:
One end of the copper post of same size is inserted into one by one in the soldered ball on printed circuit board on the pad of array arrangement and is determined
In the hole of position, it is ensured that it is completely embedded into location hole bottom and keeps the bared end of array copper post coplanar；Again by the exposing of array copper post
End and the location hole in the soldered ball on the pad of array arrangement on chip carrier substrate centering and apply appropriate pressure and make it one by one
It is completely embedded into location hole bottom；
Step 6, ultrasonic wave added Reflow Soldering realize the two-sided plant column connection of array copper post:
Encapsulating structure after inserting assembly is placed in Hot-blast Heating area, according to the thermal reflow profile heating encapsulation knot of design
Structure is applied after technological temperature is more than the solidus temperature of solder in soldered ball in four special metal coating areas of printed circuit board
Add ultrasound；Stop applying ultrasound after below the solidus temperature that Reflow Soldering later period, soldered ball temperature are down to solder；
During column is planted in Reflow Soldering, during soldered ball is in solid-liquid humidity province, the spatial relation of copper post and soldered ball is not
It can change；Meanwhile ultrasonic vibration is transferred to the pad and thereon of array arrangement by the coat of metal under printed circuit board solder mask
In solder in solid-liquid state, ultrasonic cavitation can accelerate the oxidation film on copper post surface destruction and solder it is micro-
Flowing is seen, is reliably connected the interface of copper post and solder by diffuseing to form for atom.
2. a kind of ultrasonic wave added for the encapsulation of CuCGA device according to claim 1 plants column method, which is characterized in that
The pad of the array arrangement is the weldering of array arrangement on the pad and chip carrier substrate of array arrangement on printed circuit board
Disk, the material of the pad of the array arrangement are copper, gold, silver, nickel, tin bronze, any one in brass, or by copper, gold,
The metal multilayer film pad that silver, nickel, tin bronze, brass matched combined are formed.
3. a kind of ultrasonic wave added for the encapsulation of CuCGA device according to claim 2 plants column method, which is characterized in that
The diameter of the pad of the array arrangement is D,, the pad of the array arrangement with a thickness of 35 μm
~100μm。
4. a kind of ultrasonic wave added for the encapsulation of CuCGA device according to claim 3 plants column method, which is characterized in that
Solder type in the solder(ing) paste of eutectic solder ingredient described in step 1 is SnPb system, SnCu system, SnAg system, SnAgCu
System, SnBi system, SnZn system, SnSb system, eutectic ingredient of SnIn system soft solder in any one, and the eutectic point at
The corresponding solidus of solder and liquidus temperature difference is divided to be more than or equal to 40 DEG C.
5. a kind of ultrasonic wave added for the encapsulation of CuCGA device according to claim 4 plants column method, which is characterized in that
The peak temperature range that ball technique is planted in Reflow Soldering described in step 2 is 20 DEG C ~ 30 DEG C of solder(ing) paste solder liquidus curve or more, and high temperature stops
Staying the time is 100 seconds, and the ball height h that plant ball technique is formed described in step 2 is more than or equal to the 7/10 of pad diameter D.
6. a kind of ultrasonic wave added for the encapsulation of CuCGA device according to claim 5 plants column method, which is characterized in that
The diameter of steel drill bit described in step 3 is d, and the diameter of the location hole of acquisition is also d,, D is printing electricity
The diameter of the pad of array arrangement on road plate and chip carrier substrate；The depth of location hole described in step 3 is S,, h is ball height.
7. a kind of ultrasonic wave added for the encapsulation of CuCGA device according to claim 6 plants column method, which is characterized in that
Copper post described in step 5 is the oxygen-free copper copper post of the unified specification size of establishing criteria preparation, and the diameter of the copper post isd 1,
The length of copper post isl,,l= 6~12 d 1, D is array row on printed circuit board and chip carrier substrate
The diameter of the pad of cloth, d are the diameter of steel drill bit.
8. a kind of ultrasonic wave added for the encapsulation of CuCGA device according to claim 7 plants column method, which is characterized in that
The thermal reflow profile of design described in step 6 is characterized in that Reflow Soldering peak temperature range is the solidus of solder or more 5
DEG C ~ solder liquidus curve below 15 DEG C, the range of the residence time under peak temperature is 120 ~ 180 seconds.
9. a kind of ultrasonic wave added for the encapsulation of CuCGA device according to claim 8 plants column method, which is characterized in that
Four special metal coating areas of application ultrasound described in step 6 are pre-designed, are located at array arrangement on printed circuit board
Pad periphery 0.5mm distance, the center of corresponding four side side length of pad array, be connected with adjacent pads and thickness
Identical copper coating area.
10. a kind of ultrasonic wave added for the encapsulation of CuCGA device according to claim 9 plants column method, which is characterized in that
The power bracket of the ultrasound of application described in step 6 is 400 ~ 800W, and ultrasonic frequency range is 30 ~ 40KHz, and ultrasonic pressure is
0.15~0.3MPa。
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