CN1280679C - 抗蚀剂剥离用组合物 - Google Patents

抗蚀剂剥离用组合物 Download PDF

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Publication number
CN1280679C
CN1280679C CNB028064046A CN02806404A CN1280679C CN 1280679 C CN1280679 C CN 1280679C CN B028064046 A CNB028064046 A CN B028064046A CN 02806404 A CN02806404 A CN 02806404A CN 1280679 C CN1280679 C CN 1280679C
Authority
CN
China
Prior art keywords
nitro
nitrobenzene
acid
resist
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028064046A
Other languages
English (en)
Chinese (zh)
Other versions
CN1496497A (zh
Inventor
武井瑞树
内田惠未
小谷武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nagase Chemtex Corp
Original Assignee
Nagase Chemtex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nagase Chemtex Corp filed Critical Nagase Chemtex Corp
Publication of CN1496497A publication Critical patent/CN1496497A/zh
Application granted granted Critical
Publication of CN1280679C publication Critical patent/CN1280679C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB028064046A 2001-03-13 2002-03-11 抗蚀剂剥离用组合物 Expired - Fee Related CN1280679C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP071031/01 2001-03-13
JP2001071031 2001-03-13
JP071031/2001 2001-03-13

Publications (2)

Publication Number Publication Date
CN1496497A CN1496497A (zh) 2004-05-12
CN1280679C true CN1280679C (zh) 2006-10-18

Family

ID=18928807

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028064046A Expired - Fee Related CN1280679C (zh) 2001-03-13 2002-03-11 抗蚀剂剥离用组合物

Country Status (5)

Country Link
JP (1) JP3928130B2 (ko)
KR (1) KR100831886B1 (ko)
CN (1) CN1280679C (ko)
TW (1) TWI275903B (ko)
WO (1) WO2002073319A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4566547B2 (ja) * 2003-11-13 2010-10-20 Ｈｏｙａ株式会社 マスクブランクスの製造方法及び転写マスクの製造方法
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7655608B2 (en) * 2007-08-03 2010-02-02 Dynaloy, Llc Reduced metal etch rates using stripper solutions containing a copper salt
JP4688966B2 (ja) * 2010-07-06 2011-05-25 Ｈｏｙａ株式会社 マスクブランクスの製造方法及び転写マスクの製造方法
CN102163011A (zh) * 2011-04-29 2011-08-24 西安东旺精细化学有限公司 一种光致抗蚀剂的剥离液组合物
CN104049477B (zh) * 2014-05-30 2017-12-19 江苏弘汉生物科技有限公司 抗蚀剂剥离剂
JP2017197589A (ja) * 2014-09-04 2017-11-02 横浜油脂工業株式会社 紫外線硬化型塗料用剥離剤
WO2018061065A1 (ja) * 2016-09-30 2018-04-05 パナソニックＩｐマネジメント株式会社 レジスト剥離液
JP6198095B1 (ja) * 2016-11-29 2017-09-20 パナソニックＩｐマネジメント株式会社 レジスト剥離液
CN107346095B (zh) * 2017-09-14 2020-12-22 江阴江化微电子材料股份有限公司 一种半导体制程正性光刻胶去胶液及应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE59971B1 (en) * 1986-11-10 1994-05-04 Baker J T Inc Stripping compositions and their use for stripping resists from substrates
US5988186A (en) * 1991-01-25 1999-11-23 Ashland, Inc. Aqueous stripping and cleaning compositions
JPH05259066A (ja) * 1992-03-13 1993-10-08 Texas Instr Japan Ltd ポジ型フォトレジスト用剥離液および半導体装置の製造方法
US5472830A (en) * 1994-04-18 1995-12-05 Ocg Microelectronic Materials, Inc. Non-corrosion photoresist stripping composition
JP4224651B2 (ja) * 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
JP2001022095A (ja) * 1999-07-02 2001-01-26 Nippon Zeon Co Ltd ポジ型レジスト用剥離液

Also Published As

Publication number Publication date
WO2002073319A1 (fr) 2002-09-19
KR20040030532A (ko) 2004-04-09
KR100831886B1 (ko) 2008-05-23
CN1496497A (zh) 2004-05-12
JP3928130B2 (ja) 2007-06-13
JPWO2002073319A1 (ja) 2004-07-02
TWI275903B (en) 2007-03-11

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Granted publication date: 20061018

Termination date: 20210311