CN1268000C - 电路板、电气光学装置及电子设备 - Google Patents

电路板、电气光学装置及电子设备 Download PDF

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Publication number
CN1268000C
CN1268000C CNB031043534A CN03104353A CN1268000C CN 1268000 C CN1268000 C CN 1268000C CN B031043534 A CNB031043534 A CN B031043534A CN 03104353 A CN03104353 A CN 03104353A CN 1268000 C CN1268000 C CN 1268000C
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China
Prior art keywords
dielectric film
mentioned
layer
board
electric optical
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB031043534A
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English (en)
Chinese (zh)
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CN1435804A (zh
Inventor
宫泽贵士
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Seiko Epson Corp
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Seiko Epson Corp
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Publication of CN1435804A publication Critical patent/CN1435804A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CNB031043534A 2002-02-01 2003-02-08 电路板、电气光学装置及电子设备 Expired - Lifetime CN1268000C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002026132 2002-02-01
JP2002026132 2002-02-01
JP2003022022A JP2003316296A (ja) 2002-02-01 2003-01-30 回路基板、電気光学装置、電子機器
JP2003022022 2003-01-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN 200610092500 Division CN1873969A (zh) 2002-02-01 2003-02-08 电路板、电气光学装置及电子设备

Publications (2)

Publication Number Publication Date
CN1435804A CN1435804A (zh) 2003-08-13
CN1268000C true CN1268000C (zh) 2006-08-02

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CNB031043534A Expired - Lifetime CN1268000C (zh) 2002-02-01 2003-02-08 电路板、电气光学装置及电子设备

Country Status (6)

Country Link
US (2) US20030214042A1 (https=)
EP (1) EP1333497A3 (https=)
JP (1) JP2003316296A (https=)
KR (1) KR100508296B1 (https=)
CN (1) CN1268000C (https=)
TW (1) TW200401944A (https=)

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US8901268B2 (en) * 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US20080157065A1 (en) * 2004-08-03 2008-07-03 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
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JP4967116B2 (ja) * 2005-08-23 2012-07-04 国立大学法人東北大学 多層回路基板及び電子機器
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KR100703157B1 (ko) 2005-09-15 2007-04-06 삼성전자주식회사 표시 장치
JP4428345B2 (ja) * 2006-02-03 2010-03-10 セイコーエプソン株式会社 光ヘッドおよび画像形成装置
KR100746163B1 (ko) * 2006-02-06 2007-08-06 삼성전자주식회사 디스플레이장치 및 그 제조방법
JP4542051B2 (ja) * 2006-02-22 2010-09-08 エヌ・ティ・ティ・アドバンステクノロジ株式会社 多孔質膜の形成方法
JP5128085B2 (ja) * 2006-06-06 2013-01-23 三菱電機株式会社 薄膜トランジスタ装置およびその製造方法
KR101269227B1 (ko) 2006-06-29 2013-05-30 엘지디스플레이 주식회사 유기전계 발광소자와 그 제조방법
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TWI555205B (zh) * 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP6015389B2 (ja) * 2012-11-30 2016-10-26 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
US9960280B2 (en) * 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6451875B2 (ja) * 2018-01-04 2019-01-16 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP6787386B2 (ja) * 2018-12-12 2020-11-18 株式会社リコー 絶縁膜形成用塗布液
CN112071915B (zh) * 2019-06-10 2025-07-22 堺显示器制品株式会社 薄膜晶体管及其制造方法以及显示装置
US20210249310A1 (en) * 2020-02-11 2021-08-12 Nanya Technology Corporation Semiconductor device with porous dielectric structure and method for fabricating the same
US11217664B2 (en) * 2020-02-11 2022-01-04 Nanya Technology Corporation Semiconductor device with porous dielectric structure
DE102021107615A1 (de) * 2021-03-25 2022-09-29 Ottobock Se & Co. Kgaa Verfahren zum Herstellen eines dreidimensionalen Erzeugnisses
CN114203750A (zh) * 2021-12-07 2022-03-18 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法

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Also Published As

Publication number Publication date
EP1333497A2 (en) 2003-08-06
TWI338186B (https=) 2011-03-01
EP1333497A3 (en) 2005-01-05
JP2003316296A (ja) 2003-11-07
CN1435804A (zh) 2003-08-13
US20090026942A1 (en) 2009-01-29
TW200401944A (en) 2004-02-01
KR20030066417A (ko) 2003-08-09
US20030214042A1 (en) 2003-11-20
KR100508296B1 (ko) 2005-08-17

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