CN1266305C - 环形溅射靶 - Google Patents

环形溅射靶 Download PDF

Info

Publication number
CN1266305C
CN1266305C CNB02811390XA CN02811390A CN1266305C CN 1266305 C CN1266305 C CN 1266305C CN B02811390X A CNB02811390X A CN B02811390XA CN 02811390 A CN02811390 A CN 02811390A CN 1266305 C CN1266305 C CN 1266305C
Authority
CN
China
Prior art keywords
middle section
negative electrode
outer ring
sputter
sputtering target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB02811390XA
Other languages
English (en)
Chinese (zh)
Other versions
CN1541281A (zh
Inventor
D·R·马克斯
R·马休
A·斯诺曼
C·R·菲舍尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Prax St Technology Co Ltd
Praxair ST Technology Inc
Original Assignee
Prax St Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Prax St Technology Co Ltd filed Critical Prax St Technology Co Ltd
Publication of CN1541281A publication Critical patent/CN1541281A/zh
Application granted granted Critical
Publication of CN1266305C publication Critical patent/CN1266305C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB02811390XA 2001-06-05 2002-05-31 环形溅射靶 Expired - Fee Related CN1266305C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/873,184 2001-06-05
US09/873,184 US6638402B2 (en) 2001-06-05 2001-06-05 Ring-type sputtering target

Publications (2)

Publication Number Publication Date
CN1541281A CN1541281A (zh) 2004-10-27
CN1266305C true CN1266305C (zh) 2006-07-26

Family

ID=25361131

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB02811390XA Expired - Fee Related CN1266305C (zh) 2001-06-05 2002-05-31 环形溅射靶

Country Status (9)

Country Link
US (1) US6638402B2 (enExample)
EP (1) EP1402081B1 (enExample)
JP (1) JP4213030B2 (enExample)
KR (1) KR100907757B1 (enExample)
CN (1) CN1266305C (enExample)
DE (1) DE60235008D1 (enExample)
IL (2) IL158994A0 (enExample)
TW (1) TW573043B (enExample)
WO (1) WO2002099158A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110010455A (zh) * 2018-01-04 2019-07-12 合肥江丰电子材料有限公司 长寿命lcd靶材组件及其形成方法

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030178301A1 (en) * 2001-12-21 2003-09-25 Lynn David Mark Planar magnetron targets having target material affixed to non-planar backing plates
US7431195B2 (en) * 2003-09-26 2008-10-07 Praxair S.T. Technology, Inc. Method for centering a sputter target onto a backing plate and the assembly thereof
US20050072668A1 (en) * 2003-10-06 2005-04-07 Heraeus, Inc. Sputter target having modified surface texture
US20050236270A1 (en) * 2004-04-23 2005-10-27 Heraeus, Inc. Controlled cooling of sputter targets
US20060032740A1 (en) * 2004-08-16 2006-02-16 Williams Advanced Materials, Inc. Slotted thin-film sputter deposition targets for ferromagnetic materials
JP4629051B2 (ja) * 2004-11-17 2011-02-09 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット−バッキングプレート組立体及び成膜装置
US8795486B2 (en) * 2005-09-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. PVD target with end of service life detection capability
US20070068796A1 (en) * 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
US7891536B2 (en) * 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability
CN100560784C (zh) * 2005-09-26 2009-11-18 台湾积体电路制造股份有限公司 侦测制程机台使用的消耗性材料厚板寿命的系统及方法
CN102245795B (zh) * 2008-10-10 2013-06-26 东曹Smd有限公司 用于溅射靶制造的圆形凹槽挤压机构和方法
JP5502442B2 (ja) * 2009-02-26 2014-05-28 キヤノンアネルバ株式会社 マグネトロンスパッタカソード、マグネトロンスパッタ装置及び磁性デバイスの製造方法
US9611537B2 (en) * 2010-02-23 2017-04-04 Evatec Ag Target shaping
JP5619666B2 (ja) * 2010-04-16 2014-11-05 ジェイディーエス ユニフェイズ コーポレーションＪＤＳ Ｕｎｉｐｈａｓｅ Ｃｏｒｐｏｒａｔｉｏｎ マグネトロン・スパッタリング・デバイスで使用するためのリング・カソード
US20140110245A1 (en) * 2012-10-18 2014-04-24 Primestar Solar, Inc. Non-bonded rotatable targets and their methods of sputtering
WO2014107558A1 (en) * 2013-01-04 2014-07-10 Tosoh Smd, Inc. Silicon sputtering target with enhanced surface profile and improved performance and methods of making the same
JP6203870B2 (ja) 2014-01-21 2017-09-27 住友化学株式会社 スパッタリングターゲット
WO2018119600A1 (zh) * 2016-12-26 2018-07-05 深圳市柔宇科技有限公司 磁控溅射阴极系统
JP6291122B1 (ja) 2017-03-29 2018-03-14 住友化学株式会社 スパッタリングターゲット
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
KR102446965B1 (ko) * 2021-01-28 2022-09-26 (주)지오엘리먼트 강성이 강화된 오링용 그루브를 갖는 스퍼터링 타겟 및 이의 제조방법
USD1104086S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1103948S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1071103S1 (en) * 2022-04-11 2025-04-15 Applied Materials, Inc. Gas distribution plate
USD1085029S1 (en) * 2022-07-19 2025-07-22 Applied Materials, Inc. Gas distribution plate

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583977A (ja) 1981-06-29 1983-01-10 Fujitsu Ltd スパツタリング装置
JPH01108378A (ja) * 1987-10-21 1989-04-25 Mitsubishi Electric Corp スパツタ装置
JPH04173965A (ja) 1990-11-05 1992-06-22 Vacuum Metallurgical Co Ltd スパッタリング用ターゲット
US5540821A (en) 1993-07-16 1996-07-30 Applied Materials, Inc. Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing
US5455197A (en) * 1993-07-16 1995-10-03 Materials Research Corporation Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer
JPH08239763A (ja) * 1995-02-27 1996-09-17 Nec Kansai Ltd スパッタ装置及びその調整方法
US6068742A (en) 1996-07-22 2000-05-30 Balzers Aktiengesellschaft Target arrangement with a circular plate, magnetron for mounting the target arrangement, and process for coating a series of circular disc-shaped workpieces by means of said magnetron source
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
US6086725A (en) * 1998-04-02 2000-07-11 Applied Materials, Inc. Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
IL138642A0 (en) 1999-09-23 2001-10-31 Praxair Technology Inc Extended life sputter targets

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110010455A (zh) * 2018-01-04 2019-07-12 合肥江丰电子材料有限公司 长寿命lcd靶材组件及其形成方法

Also Published As

Publication number Publication date
JP4213030B2 (ja) 2009-01-21
EP1402081A4 (en) 2007-10-10
KR20040030649A (ko) 2004-04-09
EP1402081A1 (en) 2004-03-31
EP1402081B1 (en) 2010-01-06
TW573043B (en) 2004-01-21
IL158994A (en) 2007-02-11
KR100907757B1 (ko) 2009-07-15
US6638402B2 (en) 2003-10-28
DE60235008D1 (de) 2010-02-25
IL158994A0 (en) 2004-05-12
WO2002099158A1 (en) 2002-12-12
CN1541281A (zh) 2004-10-27
US20030075437A1 (en) 2003-04-24
JP2004535513A (ja) 2004-11-25

Similar Documents

Publication Publication Date Title
CN1266305C (zh) 环形溅射靶
US6992876B1 (en) Electrostatic chuck and its manufacturing method
US6028762A (en) Electrostatic chuck
US7331780B2 (en) Heat treatment jig for semiconductor wafer
US7646581B2 (en) Electrostatic chuck
US20030183506A1 (en) Target and method of optimizing target profile
KR20190042523A (ko) 웨이퍼 지지 디바이스 및 그 제조 방법 그리고 반도체 가공 장치
WO2012024061A2 (en) Extended life deposition ring
JPS60152671A (ja) スパツタリング電極
US5336386A (en) Target for cathode sputtering
TWI653368B (zh) 用於保持半導體晶圓的基座、用於在半導體晶圓的正面上沉積磊晶層的方法、以及具有磊晶層的半導體晶圓
KR100900608B1 (ko) 웨이퍼 도금방법
KR20200121642A (ko) 반도체 제조용 부품의 재생 방법 및 재생된 반도체 제조용 부품
US20160126129A1 (en) Clamp assembly
EP3078762B1 (en) Susceptor, vapor deposition apparatus and vapor deposition method
US20010030124A1 (en) Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
CN101378024A (zh) 晶圆缺陷的检测方法
EP3721465A1 (en) Textured processing chamber components and methods of manufacturing same
EP1087033A1 (en) Extended life sputter targets
JP2005311290A (ja) サセプタ
US6597182B1 (en) Detector for detecting contact resistance anomaly of cathode electrode in electroplating machine
KR20230105984A (ko) 플라즈마 처리장치용 포커스링 제조방법
CN117047564B (zh) 一种用于平面工件电化学研磨/电化学机械抛光中抑制边缘杂散电流腐蚀的方法及装置
US20250129467A1 (en) Pvd target structure and method for preparing the same
CN109755101B (zh) 成膜方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060726

Termination date: 20200531

CF01 Termination of patent right due to non-payment of annual fee