CN1266305C - 环形溅射靶 - Google Patents

环形溅射靶 Download PDF

Info

Publication number
CN1266305C
CN1266305C CNB02811390XA CN02811390A CN1266305C CN 1266305 C CN1266305 C CN 1266305C CN B02811390X A CNB02811390X A CN B02811390XA CN 02811390 A CN02811390 A CN 02811390A CN 1266305 C CN1266305 C CN 1266305C
Authority
CN
China
Prior art keywords
middle section
sputtering
negative electrode
sputter
outer ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB02811390XA
Other languages
English (en)
Chinese (zh)
Other versions
CN1541281A (zh
Inventor
D·R·马克斯
R·马休
A·斯诺曼
C·R·菲舍尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Praxair ST Technology Inc
Original Assignee
Praxair ST Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair ST Technology Inc filed Critical Praxair ST Technology Inc
Publication of CN1541281A publication Critical patent/CN1541281A/zh
Application granted granted Critical
Publication of CN1266305C publication Critical patent/CN1266305C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB02811390XA 2001-06-05 2002-05-31 环形溅射靶 Expired - Fee Related CN1266305C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/873,184 US6638402B2 (en) 2001-06-05 2001-06-05 Ring-type sputtering target
US09/873,184 2001-06-05

Publications (2)

Publication Number Publication Date
CN1541281A CN1541281A (zh) 2004-10-27
CN1266305C true CN1266305C (zh) 2006-07-26

Family

ID=25361131

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB02811390XA Expired - Fee Related CN1266305C (zh) 2001-06-05 2002-05-31 环形溅射靶

Country Status (9)

Country Link
US (1) US6638402B2 (enExample)
EP (1) EP1402081B1 (enExample)
JP (1) JP4213030B2 (enExample)
KR (1) KR100907757B1 (enExample)
CN (1) CN1266305C (enExample)
DE (1) DE60235008D1 (enExample)
IL (2) IL158994A0 (enExample)
TW (1) TW573043B (enExample)
WO (1) WO2002099158A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110010455A (zh) * 2018-01-04 2019-07-12 合肥江丰电子材料有限公司 长寿命lcd靶材组件及其形成方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030178301A1 (en) * 2001-12-21 2003-09-25 Lynn David Mark Planar magnetron targets having target material affixed to non-planar backing plates
US7431195B2 (en) * 2003-09-26 2008-10-07 Praxair S.T. Technology, Inc. Method for centering a sputter target onto a backing plate and the assembly thereof
US20050072668A1 (en) * 2003-10-06 2005-04-07 Heraeus, Inc. Sputter target having modified surface texture
US20050236270A1 (en) * 2004-04-23 2005-10-27 Heraeus, Inc. Controlled cooling of sputter targets
WO2006023321A2 (en) * 2004-08-16 2006-03-02 Williams Advanced Materials, Inc. Slotted thin-film sputter deposition targets for ferromagnetic materials
DE602005021535D1 (de) * 2004-11-17 2010-07-08 Nippon Mining Co Trägerplattenanordnung für sputtertargets und filmabscheidungssystem
US7891536B2 (en) 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability
US20070068796A1 (en) * 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
US8795486B2 (en) * 2005-09-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. PVD target with end of service life detection capability
CN100529160C (zh) * 2005-09-26 2009-08-19 台湾积体电路制造股份有限公司 可消耗材料的厚板及物理气相沉积靶材料
KR20110083649A (ko) * 2008-10-10 2011-07-20 토소우 에스엠디, 인크 원형 홈 가압 기구 및 스퍼터링 타겟 제조 방법
JP5502442B2 (ja) * 2009-02-26 2014-05-28 キヤノンアネルバ株式会社 マグネトロンスパッタカソード、マグネトロンスパッタ装置及び磁性デバイスの製造方法
KR20120130333A (ko) * 2010-02-23 2012-11-30 오씨 외를리콘 발처스 악티엔게젤샤프트 타겟 성형
JP5619666B2 (ja) * 2010-04-16 2014-11-05 ジェイディーエス ユニフェイズ コーポレーションＪＤＳ Ｕｎｉｐｈａｓｅ Ｃｏｒｐｏｒａｔｉｏｎ マグネトロン・スパッタリング・デバイスで使用するためのリング・カソード
US20140110245A1 (en) * 2012-10-18 2014-04-24 Primestar Solar, Inc. Non-bonded rotatable targets and their methods of sputtering
TWI605142B (zh) * 2013-01-04 2017-11-11 塔沙Ｓｍｄ公司 具有增進的表面輪廓和改善的性能的矽濺射靶及製造其之方法
KR20160111387A (ko) * 2014-01-21 2016-09-26 스미또모 가가꾸 가부시끼가이샤 스퍼터링 타겟
WO2018119600A1 (zh) * 2016-12-26 2018-07-05 深圳市柔宇科技有限公司 磁控溅射阴极系统
JP6291122B1 (ja) 2017-03-29 2018-03-14 住友化学株式会社 スパッタリングターゲット
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
KR102446965B1 (ko) * 2021-01-28 2022-09-26 (주)지오엘리먼트 강성이 강화된 오링용 그루브를 갖는 스퍼터링 타겟 및 이의 제조방법
USD1103948S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1104086S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1071103S1 (en) * 2022-04-11 2025-04-15 Applied Materials, Inc. Gas distribution plate
USD1085029S1 (en) * 2022-07-19 2025-07-22 Applied Materials, Inc. Gas distribution plate
CN117867455A (zh) * 2023-11-24 2024-04-12 英诺赛科（珠海）科技有限公司 一种靶材及GaN HEMT器件的制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583977A (ja) 1981-06-29 1983-01-10 Fujitsu Ltd スパツタリング装置
JPH01108378A (ja) * 1987-10-21 1989-04-25 Mitsubishi Electric Corp スパツタ装置
JPH04173965A (ja) 1990-11-05 1992-06-22 Vacuum Metallurgical Co Ltd スパッタリング用ターゲット
US5540821A (en) * 1993-07-16 1996-07-30 Applied Materials, Inc. Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing
US5455197A (en) * 1993-07-16 1995-10-03 Materials Research Corporation Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer
JPH08239763A (ja) * 1995-02-27 1996-09-17 Nec Kansai Ltd スパッタ装置及びその調整方法
US6068742A (en) 1996-07-22 2000-05-30 Balzers Aktiengesellschaft Target arrangement with a circular plate, magnetron for mounting the target arrangement, and process for coating a series of circular disc-shaped workpieces by means of said magnetron source
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
US6086725A (en) * 1998-04-02 2000-07-11 Applied Materials, Inc. Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
EP1087033A1 (en) 1999-09-23 2001-03-28 Praxair Technology, Inc. Extended life sputter targets

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110010455A (zh) * 2018-01-04 2019-07-12 合肥江丰电子材料有限公司 长寿命lcd靶材组件及其形成方法

Also Published As

Publication number Publication date
US20030075437A1 (en) 2003-04-24
EP1402081A1 (en) 2004-03-31
WO2002099158A1 (en) 2002-12-12
TW573043B (en) 2004-01-21
EP1402081A4 (en) 2007-10-10
KR100907757B1 (ko) 2009-07-15
KR20040030649A (ko) 2004-04-09
DE60235008D1 (de) 2010-02-25
IL158994A (en) 2007-02-11
CN1541281A (zh) 2004-10-27
US6638402B2 (en) 2003-10-28
IL158994A0 (en) 2004-05-12
JP2004535513A (ja) 2004-11-25
EP1402081B1 (en) 2010-01-06
JP4213030B2 (ja) 2009-01-21

Similar Documents

Publication Publication Date Title
CN1541281A (zh) 环形溅射靶
US7646581B2 (en) Electrostatic chuck
JP3129452B2 (ja) 静電チャック
US6992876B1 (en) Electrostatic chuck and its manufacturing method
JPS60152671A (ja) スパツタリング電極
US10971390B2 (en) Methods of minimizing wafer backside damage in semiconductor wafer processing
JP2004535513A5 (enExample)
US6258227B1 (en) Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
KR101305760B1 (ko) 세라믹스 히터
JP3919409B2 (ja) プラズマ処理装置および半導体製造装置のフォーカスリング
CN112899632B (zh) 可实现便捷控温的真空镀膜工艺设备及方法
US10153135B2 (en) Plasma etching apparatus
US6214413B1 (en) Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
CN1548575A (zh) 溅镀装置及其使用此装置的金属层/金属化合物层的制造方法
TW202410286A (zh) 半導體設備
US6623605B2 (en) Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
CN115852478A (zh) 用于硅片的外延生长的基座及装置
JPH0360916B2 (enExample)
JP2000226670A (ja) Ｃｖｄ装置および磁気記録媒体の製造方法
US12559833B2 (en) PVD target structure and method for preparing the same
CN119571271A (zh) 溅射镀膜阻挡装置及真空溅射镀膜机
WO2026048952A1 (ja) 半導体デバイス製造用サセプタ
JP2026047246A (ja) 半導体デバイス製造用サセプタ
CN109755101B (zh) 成膜方法
CN118754615A (zh) 一种esc静电卡盘制造工艺及esc静电卡盘

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060726

Termination date: 20200531