CN1257307C - 双扫描薄膜处理系统 - Google Patents

双扫描薄膜处理系统 Download PDF

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Publication number
CN1257307C
CN1257307C CN 01814155 CN01814155A CN1257307C CN 1257307 C CN1257307 C CN 1257307C CN 01814155 CN01814155 CN 01814155 CN 01814155 A CN01814155 A CN 01814155A CN 1257307 C CN1257307 C CN 1257307C
Authority
CN
China
Prior art keywords
scanning
deposition
motion
ion beam
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 01814155
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English (en)
Chinese (zh)
Other versions
CN1447865A (zh
Inventor
皮埃罗·斯弗拉佐
李中新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OPNETICS Corp
Oerlikon USA Inc
Original Assignee
OPNETICS Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/840,394 external-priority patent/US6669824B2/en
Application filed by OPNETICS Corp filed Critical OPNETICS Corp
Publication of CN1447865A publication Critical patent/CN1447865A/zh
Application granted granted Critical
Publication of CN1257307C publication Critical patent/CN1257307C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN 01814155 2000-07-10 2001-07-09 双扫描薄膜处理系统 Expired - Fee Related CN1257307C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US21704900P 2000-07-10 2000-07-10
US60/217,049 2000-07-10
US09/840,394 US6669824B2 (en) 2000-07-10 2001-04-23 Dual-scan thin film processing system
US09/840,394 2001-04-23

Publications (2)

Publication Number Publication Date
CN1447865A CN1447865A (zh) 2003-10-08
CN1257307C true CN1257307C (zh) 2006-05-24

Family

ID=26911563

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 01814155 Expired - Fee Related CN1257307C (zh) 2000-07-10 2001-07-09 双扫描薄膜处理系统

Country Status (5)

Country Link
EP (1) EP1301651A2 (fr)
JP (1) JP2004533538A (fr)
CN (1) CN1257307C (fr)
AU (1) AU2001273260A1 (fr)
WO (1) WO2002004695A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107636196A (zh) * 2015-05-14 2018-01-26 瓦里安半导体设备公司 多层沉积装置及方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104378904B (zh) * 2014-11-20 2017-01-18 大连理工大学 一种体产生负氢离子机制的等离子体腔室
CN106987817B (zh) * 2017-04-17 2019-03-29 同济大学 一种提高线型磁控溅射靶枪在凹形柱面基底镀膜质量的方法
JP2020023739A (ja) * 2018-08-08 2020-02-13 株式会社アルバック イオンビームスパッタリング装置及びイオンビームスパッタリング方法
JP2020026539A (ja) * 2018-08-09 2020-02-20 株式会社アルバック イオンビームスパッタリング装置及びイオンビームスパッタリング方法
CN114703455B (zh) * 2022-02-21 2023-11-28 松山湖材料实验室 组合薄膜制备方法及装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2959023B2 (ja) * 1990-02-23 1999-10-06 日本電気株式会社 イオンビームスパッタ装置
JP3074712B2 (ja) * 1990-08-31 2000-08-07 日本電気株式会社 銀の単結晶薄膜および金属人工格子の製造方法
US5356673A (en) * 1991-03-18 1994-10-18 Jet Process Corporation Evaporation system and method for gas jet deposition of thin film materials
JPH05170448A (ja) * 1991-12-26 1993-07-09 Matsushita Electric Ind Co Ltd セラミックス薄膜の製造方法
JP3452617B2 (ja) * 1993-12-10 2003-09-29 真空冶金株式会社 ガスデポジション装置
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
DE19513918C1 (de) * 1995-04-12 1996-11-07 Fraunhofer Ges Forschung Verfahren zur Beschichtung von sub-Mikrometerstrukturen und seine Anwendung
JPH1026698A (ja) * 1996-07-12 1998-01-27 Nikon Corp 真空薄膜形成装置及び反射鏡の製造方法
JP3861329B2 (ja) * 1996-07-17 2006-12-20 株式会社ニコン 真空薄膜形成装置及び反射鏡の製造方法
US6086727A (en) * 1998-06-05 2000-07-11 International Business Machines Corporation Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
JP3081844B2 (ja) * 1998-08-26 2000-08-28 日本電信電話株式会社 光フィルタの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107636196A (zh) * 2015-05-14 2018-01-26 瓦里安半导体设备公司 多层沉积装置及方法
CN107636196B (zh) * 2015-05-14 2020-03-06 瓦里安半导体设备公司 多层沉积处理装置

Also Published As

Publication number Publication date
WO2002004695A3 (fr) 2002-06-20
JP2004533538A (ja) 2004-11-04
WO2002004695A2 (fr) 2002-01-17
EP1301651A2 (fr) 2003-04-16
CN1447865A (zh) 2003-10-08
AU2001273260A1 (en) 2002-01-21

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Granted publication date: 20060524

Termination date: 20100709