AU2001273260A1 - Dual-scan thin film processing system - Google Patents

Dual-scan thin film processing system

Info

Publication number
AU2001273260A1
AU2001273260A1 AU2001273260A AU7326001A AU2001273260A1 AU 2001273260 A1 AU2001273260 A1 AU 2001273260A1 AU 2001273260 A AU2001273260 A AU 2001273260A AU 7326001 A AU7326001 A AU 7326001A AU 2001273260 A1 AU2001273260 A1 AU 2001273260A1
Authority
AU
Australia
Prior art keywords
dual
thin film
processing system
film processing
scan thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001273260A
Other languages
English (en)
Inventor
Chunghsin Lee
Piero Sferlazzo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OPNETICS Corp
Original Assignee
OPNETICS CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/840,394 external-priority patent/US6669824B2/en
Application filed by OPNETICS CORP filed Critical OPNETICS CORP
Publication of AU2001273260A1 publication Critical patent/AU2001273260A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/46Sputtering by ion beam produced by an external ion source

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AU2001273260A 2000-07-10 2001-07-09 Dual-scan thin film processing system Abandoned AU2001273260A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US21704900P 2000-07-10 2000-07-10
US60217049 2000-07-10
US09/840,394 US6669824B2 (en) 2000-07-10 2001-04-23 Dual-scan thin film processing system
US09840394 2001-04-23
PCT/US2001/021517 WO2002004695A2 (fr) 2000-07-10 2001-07-09 Systeme de traitement d'une couche mince a double balayage

Publications (1)

Publication Number Publication Date
AU2001273260A1 true AU2001273260A1 (en) 2002-01-21

Family

ID=26911563

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001273260A Abandoned AU2001273260A1 (en) 2000-07-10 2001-07-09 Dual-scan thin film processing system

Country Status (5)

Country Link
EP (1) EP1301651A2 (fr)
JP (1) JP2004533538A (fr)
CN (1) CN1257307C (fr)
AU (1) AU2001273260A1 (fr)
WO (1) WO2002004695A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104378904B (zh) * 2014-11-20 2017-01-18 大连理工大学 一种体产生负氢离子机制的等离子体腔室
US9988711B2 (en) * 2015-05-14 2018-06-05 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for multilayer deposition
CN106987817B (zh) * 2017-04-17 2019-03-29 同济大学 一种提高线型磁控溅射靶枪在凹形柱面基底镀膜质量的方法
JP2020023739A (ja) * 2018-08-08 2020-02-13 株式会社アルバック イオンビームスパッタリング装置及びイオンビームスパッタリング方法
JP2020026539A (ja) * 2018-08-09 2020-02-20 株式会社アルバック イオンビームスパッタリング装置及びイオンビームスパッタリング方法
CN114703455B (zh) * 2022-02-21 2023-11-28 松山湖材料实验室 组合薄膜制备方法及装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2959023B2 (ja) * 1990-02-23 1999-10-06 日本電気株式会社 イオンビームスパッタ装置
JP3074712B2 (ja) * 1990-08-31 2000-08-07 日本電気株式会社 銀の単結晶薄膜および金属人工格子の製造方法
US5356673A (en) * 1991-03-18 1994-10-18 Jet Process Corporation Evaporation system and method for gas jet deposition of thin film materials
JPH05170448A (ja) * 1991-12-26 1993-07-09 Matsushita Electric Ind Co Ltd セラミックス薄膜の製造方法
JP3452617B2 (ja) * 1993-12-10 2003-09-29 真空冶金株式会社 ガスデポジション装置
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
DE19513918C1 (de) * 1995-04-12 1996-11-07 Fraunhofer Ges Forschung Verfahren zur Beschichtung von sub-Mikrometerstrukturen und seine Anwendung
JPH1026698A (ja) * 1996-07-12 1998-01-27 Nikon Corp 真空薄膜形成装置及び反射鏡の製造方法
JP3861329B2 (ja) * 1996-07-17 2006-12-20 株式会社ニコン 真空薄膜形成装置及び反射鏡の製造方法
US6086727A (en) * 1998-06-05 2000-07-11 International Business Machines Corporation Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
JP3081844B2 (ja) * 1998-08-26 2000-08-28 日本電信電話株式会社 光フィルタの製造方法

Also Published As

Publication number Publication date
EP1301651A2 (fr) 2003-04-16
JP2004533538A (ja) 2004-11-04
CN1447865A (zh) 2003-10-08
CN1257307C (zh) 2006-05-24
WO2002004695A3 (fr) 2002-06-20
WO2002004695A2 (fr) 2002-01-17

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