CN1250767C - 气体喷头、成膜装置及成膜方法 - Google Patents
气体喷头、成膜装置及成膜方法 Download PDFInfo
- Publication number
- CN1250767C CN1250767C CNB038006928A CN03800692A CN1250767C CN 1250767 C CN1250767 C CN 1250767C CN B038006928 A CNB038006928 A CN B038006928A CN 03800692 A CN03800692 A CN 03800692A CN 1250767 C CN1250767 C CN 1250767C
- Authority
- CN
- China
- Prior art keywords
- gas
- film
- film forming
- substrate
- gas tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP43483/2002 | 2002-02-20 | ||
JP2002043483A JP4288036B2 (ja) | 2002-02-20 | 2002-02-20 | ガスシャワーヘッド、成膜装置及び成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1533447A CN1533447A (zh) | 2004-09-29 |
CN1250767C true CN1250767C (zh) | 2006-04-12 |
Family
ID=27750527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038006928A Expired - Fee Related CN1250767C (zh) | 2002-02-20 | 2003-02-20 | 气体喷头、成膜装置及成膜方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4288036B2 (ko) |
KR (2) | KR100729874B1 (ko) |
CN (1) | CN1250767C (ko) |
WO (1) | WO2003071003A1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5044931B2 (ja) * | 2005-10-31 | 2012-10-10 | 東京エレクトロン株式会社 | ガス供給装置及び基板処理装置 |
KR100866912B1 (ko) | 2007-05-31 | 2008-11-04 | 주식회사 마이크로텍 | 화학기상증착장비 |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
US7807222B2 (en) * | 2007-09-17 | 2010-10-05 | Asm International N.V. | Semiconductor processing parts having apertures with deposited coatings and methods for forming the same |
JP2009224590A (ja) * | 2008-03-17 | 2009-10-01 | Tokyo Electron Ltd | 基板処理装置 |
JP4731580B2 (ja) * | 2008-03-27 | 2011-07-27 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
KR101412034B1 (ko) * | 2008-06-18 | 2014-06-26 | 주식회사 원익아이피에스 | 가스분사조립체 및 이를 이용한 박막증착장치 |
KR101155291B1 (ko) * | 2010-02-22 | 2012-06-12 | 주식회사 테스 | 건식식각장치 및 이를 구비한 기판처리시스템 |
JP6115244B2 (ja) * | 2013-03-28 | 2017-04-19 | 東京エレクトロン株式会社 | 成膜装置 |
WO2016154052A1 (en) * | 2015-03-25 | 2016-09-29 | Applied Materials, Inc. | Chamber components for epitaxial growth apparatus |
US10297458B2 (en) * | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3360098B2 (ja) * | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | 処理装置のシャワーヘッド構造 |
JPH10226885A (ja) * | 1997-02-17 | 1998-08-25 | Ebara Corp | ガス噴射ヘッド |
JP3125043B2 (ja) * | 1997-03-21 | 2001-01-15 | 東京大学長 | 分離可能な接合構造物及びその分離方法 |
JP2000239837A (ja) * | 1999-02-15 | 2000-09-05 | Sony Corp | 固相拡散接合されたスパッタリングターゲット組立体の分離方法 |
JP2001064777A (ja) * | 1999-08-30 | 2001-03-13 | Ebara Corp | ガス噴射ヘッド |
JP4717179B2 (ja) * | 2000-06-21 | 2011-07-06 | 日本電気株式会社 | ガス供給装置及び処理装置 |
-
2002
- 2002-02-20 JP JP2002043483A patent/JP4288036B2/ja not_active Expired - Fee Related
-
2003
- 2003-02-20 KR KR1020067012397A patent/KR100729874B1/ko not_active IP Right Cessation
- 2003-02-20 KR KR1020047012751A patent/KR100633892B1/ko not_active IP Right Cessation
- 2003-02-20 CN CNB038006928A patent/CN1250767C/zh not_active Expired - Fee Related
- 2003-02-20 WO PCT/JP2003/001890 patent/WO2003071003A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR100729874B1 (ko) | 2007-06-18 |
KR100633892B1 (ko) | 2006-10-13 |
JP4288036B2 (ja) | 2009-07-01 |
CN1533447A (zh) | 2004-09-29 |
KR20040086392A (ko) | 2004-10-08 |
WO2003071003A1 (fr) | 2003-08-28 |
JP2003247073A (ja) | 2003-09-05 |
KR20060079804A (ko) | 2006-07-06 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060412 Termination date: 20160220 |
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CF01 | Termination of patent right due to non-payment of annual fee |