CN1248640A - 具有带永磁配置结构的阴极的溅射装置 - Google Patents
具有带永磁配置结构的阴极的溅射装置 Download PDFInfo
- Publication number
- CN1248640A CN1248640A CN99119789A CN99119789A CN1248640A CN 1248640 A CN1248640 A CN 1248640A CN 99119789 A CN99119789 A CN 99119789A CN 99119789 A CN99119789 A CN 99119789A CN 1248640 A CN1248640 A CN 1248640A
- Authority
- CN
- China
- Prior art keywords
- negative electrode
- permanent magnet
- central
- face
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Microwave Tubes (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19836125.4 | 1998-08-10 | ||
DE19836125A DE19836125C2 (de) | 1998-08-10 | 1998-08-10 | Zerstäubungsvorrichtung mit einer Kathode mit Permanentmagnetanordnung |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1248640A true CN1248640A (zh) | 2000-03-29 |
CN100383276C CN100383276C (zh) | 2008-04-23 |
Family
ID=7877040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991197895A Expired - Lifetime CN100383276C (zh) | 1998-08-10 | 1999-08-10 | 具有带永磁配置结构的阴极的溅射装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6207028B1 (zh) |
EP (1) | EP0980090B1 (zh) |
JP (1) | JP4243388B2 (zh) |
KR (1) | KR100604649B1 (zh) |
CN (1) | CN100383276C (zh) |
AT (1) | ATE361548T1 (zh) |
DE (2) | DE19836125C2 (zh) |
TW (1) | TW442823B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103474314A (zh) * | 2013-09-27 | 2013-12-25 | 西南交通大学 | 径向无箔二极管引导磁场系统 |
CN111022275A (zh) * | 2019-12-23 | 2020-04-17 | 北京航空航天大学 | 一种磁等离子体推力器的阳极结构及磁等离子体推力器 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1258616C (zh) * | 2001-02-07 | 2006-06-07 | 旭硝子株式会社 | 溅射装置及溅射成膜方法 |
CA2483260C (en) * | 2002-05-06 | 2008-12-09 | Guardian Industries Corp. | Sputter coating apparatus including ion beam source(s), and corresponding method |
DE102004007813A1 (de) * | 2004-02-18 | 2005-09-08 | Applied Films Gmbh & Co. Kg | Sputtervorrichtung mit einem Magnetron und einem Target |
US7485210B2 (en) * | 2004-10-07 | 2009-02-03 | International Business Machines Corporation | Sputtering target fixture |
JP5461264B2 (ja) * | 2010-03-25 | 2014-04-02 | キヤノンアネルバ株式会社 | マグネトロンスパッタリング装置、及び、スパッタリング方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2028377B (en) | 1978-08-21 | 1982-12-08 | Vac Tec Syst | Magnetically-enhanced sputtering device |
US4265729A (en) * | 1978-09-27 | 1981-05-05 | Vac-Tec Systems, Inc. | Magnetically enhanced sputtering device |
US4461688A (en) * | 1980-06-23 | 1984-07-24 | Vac-Tec Systems, Inc. | Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method |
JPS59200763A (ja) * | 1983-04-30 | 1984-11-14 | Fujitsu Ltd | スパツタリング装置 |
CH672319A5 (en) * | 1987-12-20 | 1989-11-15 | Bogdan Zega | Sputtering target cooling system - has metal membrane sepg. cooling liq. circuit from sputtering chamber |
DE3812379A1 (de) * | 1988-04-14 | 1989-10-26 | Leybold Ag | Zerstaeubungskathode nach dem magnetron-prinzip |
DE3912381A1 (de) * | 1988-04-15 | 1989-10-26 | Sharp Kk | Auffaengereinheit |
JPH0774439B2 (ja) * | 1989-01-30 | 1995-08-09 | 三菱化学株式会社 | マグネトロンスパッタ装置 |
DE3937558C2 (de) * | 1989-11-11 | 1997-02-13 | Leybold Ag | Katodenzerstäubungsvorrichtung |
DE4201551C2 (de) * | 1992-01-22 | 1996-04-25 | Leybold Ag | Zerstäubungskathode |
US5328585A (en) * | 1992-12-11 | 1994-07-12 | Photran Corporation | Linear planar-magnetron sputtering apparatus with reciprocating magnet-array |
DE4301516C2 (de) * | 1993-01-21 | 2003-02-13 | Applied Films Gmbh & Co Kg | Targetkühlung mit Wanne |
EP0704878A1 (en) * | 1994-09-27 | 1996-04-03 | Applied Materials, Inc. | Uniform film thickness deposition of sputtered materials |
JP3655334B2 (ja) * | 1994-12-26 | 2005-06-02 | 松下電器産業株式会社 | マグネトロンスパッタリング装置 |
CN1166811C (zh) * | 1996-01-05 | 2004-09-15 | 日本真空技术株式会社 | 离子溅射泵 |
DE19607803A1 (de) * | 1996-03-01 | 1997-09-04 | Leybold Ag | Vorrichtung zur Überwachung der Targetabnutzung von Sputterkathoden |
CN2241698Y (zh) * | 1996-03-08 | 1996-12-04 | 甘国工 | 平面磁控溅射源 |
DE19614487A1 (de) * | 1996-04-12 | 1997-10-16 | Leybold Ag | Sputterkathode |
DE19819785A1 (de) * | 1998-05-04 | 1999-11-11 | Leybold Systems Gmbh | Zerstäubungskathode nach dem Magnetron-Prinzip |
-
1998
- 1998-08-10 DE DE19836125A patent/DE19836125C2/de not_active Expired - Lifetime
-
1999
- 1999-07-30 AT AT99114913T patent/ATE361548T1/de not_active IP Right Cessation
- 1999-07-30 DE DE59914321T patent/DE59914321D1/de not_active Expired - Lifetime
- 1999-07-30 EP EP99114913A patent/EP0980090B1/de not_active Expired - Lifetime
- 1999-08-02 TW TW088113172A patent/TW442823B/zh not_active IP Right Cessation
- 1999-08-06 JP JP22408899A patent/JP4243388B2/ja not_active Expired - Lifetime
- 1999-08-09 KR KR1019990032490A patent/KR100604649B1/ko not_active IP Right Cessation
- 1999-08-10 CN CNB991197895A patent/CN100383276C/zh not_active Expired - Lifetime
- 1999-08-10 US US09/371,605 patent/US6207028B1/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103474314A (zh) * | 2013-09-27 | 2013-12-25 | 西南交通大学 | 径向无箔二极管引导磁场系统 |
CN103474314B (zh) * | 2013-09-27 | 2016-01-20 | 西南交通大学 | 径向无箔二极管引导磁场系统 |
CN111022275A (zh) * | 2019-12-23 | 2020-04-17 | 北京航空航天大学 | 一种磁等离子体推力器的阳极结构及磁等离子体推力器 |
Also Published As
Publication number | Publication date |
---|---|
DE19836125A1 (de) | 2000-02-24 |
DE19836125C2 (de) | 2001-12-06 |
KR100604649B1 (ko) | 2006-07-25 |
US6207028B1 (en) | 2001-03-27 |
KR20000017180A (ko) | 2000-03-25 |
EP0980090B1 (de) | 2007-05-02 |
EP0980090A2 (de) | 2000-02-16 |
DE59914321D1 (de) | 2007-06-14 |
JP4243388B2 (ja) | 2009-03-25 |
TW442823B (en) | 2001-06-23 |
CN100383276C (zh) | 2008-04-23 |
ATE361548T1 (de) | 2007-05-15 |
EP0980090A3 (de) | 2004-12-01 |
JP2000096225A (ja) | 2000-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4162954A (en) | Planar magnetron sputtering device | |
US4892633A (en) | Magnetron sputtering cathode | |
EP0211412B1 (en) | Planar magnetron sputtering apparatus and its magnetic source | |
US7259378B2 (en) | Closed drift ion source | |
USRE46599E1 (en) | Sputtering apparatus | |
US4239611A (en) | Magnetron sputtering devices | |
JPH05505215A (ja) | マグネトロンスパッタイオンプレーティング | |
US4412907A (en) | Ferromagnetic high speed sputtering apparatus | |
KR930023486A (ko) | 마그네트론 캐소드 어셈블리 | |
CN100383276C (zh) | 具有带永磁配置结构的阴极的溅射装置 | |
JP2899190B2 (ja) | マグネトロンプラズマ用永久磁石磁気回路 | |
US6919672B2 (en) | Closed drift ion source | |
EP0134458A1 (en) | Stator for a magnet motor | |
KR850008362A (ko) | 스퍼터코팅 장치 및 방법 | |
US20140061029A1 (en) | Sputtering apparatus | |
KR100359901B1 (ko) | 마그네트론 원리에 근거한 스퍼터링 캐소드 | |
CN113667949A (zh) | 磁控溅射设备 | |
JP2001164362A (ja) | プレーナーマグネトロンスパッタリング装置 | |
JPS6217175A (ja) | スパツタリング装置 | |
KR20050031848A (ko) | 마그네트론 스퍼터링 장치 | |
JPH0734244A (ja) | マグネトロン型スパッタカソード | |
US6139706A (en) | Sputter cathode | |
JP3037823U (ja) | 長手方向に延びた二つのマグネトロンを有するスパッタリング装置 | |
JPS6328986B2 (zh) | ||
JPH06212420A (ja) | スパッタ及びエッチング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: BALZERS UND LEYBOLD DEUTSCHLAND HOLDING AG Free format text: FORMER OWNER: LEYBOLD AG Effective date: 20020306 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20020306 Address after: Federal Republic of Germany, Kazakhstan Applicant after: Balzers Und Leybold Deutschland Holding AG Address before: Federal Republic of Germany, Kazakhstan Applicant before: Leybold Systems GmbH |
|
ASS | Succession or assignment of patent right |
Owner name: BAOERZESI PROCESS SYSTEMS CO.LTD. Free format text: FORMER OWNER: BALZERS UND LEYBOLD DEUTSCHLAND HOLDING AG Effective date: 20020320 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20020320 Address after: Federal Republic of Germany, Kazakhstan Applicant after: Bauer Ze J process systems, Limited by Share Ltd Address before: Federal Republic of Germany, Kazakhstan Applicant before: Balzers Und Leybold Deutschland Holding AG |
|
ASS | Succession or assignment of patent right |
Owner name: LEIPOLD PAINT LIMITED PARTNERSHIP Free format text: FORMER OWNER: BAOERZESI PROCESS SYSTEMS CO.LTD. Effective date: 20020724 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20020724 Address after: Federal Republic of Germany Applicant after: Laborde paint Co Ltd Address before: Federal Republic of Germany, Kazakhstan Applicant before: Bauer Ze J process systems, Limited by Share Ltd |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: APPLIED MATERIALS SHARES LIMITED PARTNERSHIP Free format text: FORMER NAME OR ADDRESS: APPLIED PHILIN GMBH + CO. KG |
|
CP03 | Change of name, title or address |
Address after: In Germany Patentee after: Applied Films GmbH & Co. KG Address before: Federal Republic of Germany Patentee before: Applied Films GmbH & Co. KG |
|
CX01 | Expiry of patent term |
Granted publication date: 20080423 |
|
CX01 | Expiry of patent term |