CN1239342A - 具有碳掺杂接触层的光学器件 - Google Patents

具有碳掺杂接触层的光学器件 Download PDF

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CN1239342A
CN1239342A CN99108378A CN99108378A CN1239342A CN 1239342 A CN1239342 A CN 1239342A CN 99108378 A CN99108378 A CN 99108378A CN 99108378 A CN99108378 A CN 99108378A CN 1239342 A CN1239342 A CN 1239342A
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乌特帕尔·库马尔·沙克拉巴蒂
罗伯特·阿兰·哈姆
约瑟夫·布莱恩·希勒
格莱伯·E·史坦格尔
劳伦斯·埃德温·斯密斯
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Nokia of America Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

本发明涉及一种光学器件及其制造方法，其中减轻了包层(15)和波导区(14)中的Zn迁移带来的问题。接触区(16)包含碳，碳用作三元半导体材料中的p型掺杂剂。

Description

具有碳掺杂接触层的光学器件
本发明涉及半导体光学器件，包括激光器、电吸收调制器和探测器。
目前，电吸收调制激光器(EML)在高速光学系统上的应用深受关注。这类器件通常包括在一个衬底上形成的半导体激光器和调制器。这些器件通常包括半导体多量子阱(MQW)激活区、在其上形成的利于与激活层电接触的接触层、用来将电流导向激活区的电流阻挡层以及将光约束在激活区的包层。Zn是用于阻挡层、接触层和包层的常用p型掺杂剂，激光器和调制器的性能主要取决于器件各层中的Zn含量。
为了获得最佳性能，层结构中需要保持一定的Zn掺杂剂分布图。但是，在由于Zn掺杂剂从接触层迁移以造成接触层生长时，阻挡层和包层中的Zn分布图会被改变。解决这个问题的方法之一是减小包层、阻挡层和接触层中的Zn含量。然而，这种方法还会对其它器件性能如器件总电阻造成不良影响。
因此，需要提供一种可以减轻光学器件中的Zn迁移带来的问题的方法及由该方法获得的器件。
根据本发明的第一方面提供一种光器件，包括半导体波导区(可以包含激活区)、与波导区相邻接地形成的具有包含Zn的掺杂剂的包层区以及接触区。接触区选自材料InGaAs和InGaAsP，并在波导区上形成。接触区具有用来提供足够的导电性的包含碳的P型掺杂剂，以使其与波导区低电阻接触。
根据本发明的另一方面提供一种制造光学器件的方法，包括下列步骤：在衬底上外延生长形成半导体波导区，并形成与波导区相邻接的包层区，包层区具有包含Zn的掺杂剂。接触区选自材料InGaAs和InGaAsP，并在波导区上外延生长形成。接触区具有用来提供足够的导电性的包含碳的P型掺杂剂，以使其与波导区低电阻接触。
下面将详细描述本发明的这些和其它特点。
图1是根据本发明的一个实施方案的光学器件的立体图；
图2-4是图1所示器件在制造的不同阶段的视图；
图5是根据本发明的另一实施方案的器件的正视图。
应当理解，因为仅是为了说明，这些图没有必要按比例绘制。
图1示出了典型的电吸收调制激光器(EML)器件10，它包含了本发明的特征。器件10基本上包括在同一衬底13上形成的两部分：激光器部分11和调制器部分12。衬底13通常包含InP。在衬底13上形成波导区14，它包含激活层和光约束层的组合，且通常是InGaAsP。波导区14包括p-n结26。如本领域公知的，这样选择波导14的组分的性能，即，使得波导在激光器区11用作激活区，而在调制器区12波导根据向其施加的偏电压吸收一定量的发射光。(参见例如，Johnson等“High speed Intergrated Electroabsorption Modulators”，Proceedings of SPIE，Vol 3038，PP 30-38，Feb.1997)。
因此，本申请的内容中的“波导”区指把光约束在器件特定位置的区域，且可包括激活区、调制器区和探测器区(未示出)的一个或其组合。
与波导14邻接地形成阻挡层25。该层通常包括交替的n、p型和本征层的InP，并用来阻挡波导14之外的区域上的电流。
包层15也与波导14相邻接地形成，并在其上面展开。层15和14一起提供用于光波导合适动作的必要结构。层15通常是二元材料，如InP。包层通常包含以被控制的分布图分布的作为p型掺杂剂的Zn。接触层16在波导和包层区上形成。对该层进行掺杂以提供足够的导电性，从而使其与层14的部分进行低电阻接触。层16通常包含InGaAs并具有用来调整导电性的p型掺杂剂。根据优选实施方案，该杂质是碳，且杂质浓度为1×1018-5×1019cm-3。虽然碳在其它材料如InP中用作n型掺杂剂，但在三元材料中它用作p型掺杂剂。在接触层16中去除掺杂剂Zn，有效地消除了在生长和加工中与Zn迁移相关的问题，如在激光器部分波导14的内损增加等。而且，还有助于保持区域14中的p-n结的位置。
器件10还包括在接触层16的激光器部分11和调制器部分12上分别形成的电极17和18，以及在衬底13底面上形成的电极19。这些电极提供在激光器部分11发光、并在调制器部分12控制对发出光的吸收的偏电压。
图2～4示出图1所示器件的制造方法。如图2所示，首先形成通常是SiO2的掩模部分20和21并使衬底的中央部分裸露出来，然后在裸露区通过有机金属化学汽相淀积(MOCVD)或气相分子单外延生长(GSMBE)使区域14生长，从而在衬底13上形成区域14。
之后，通常将区域20和21去除，在区域14上形成另一个SiO2掩模(未示出)，然后对该区域进行蚀刻形成平台式结构。
然后，如图3所示，通过在衬底13的裸露表面上外延生长半导体层形成阻挡层25和包层15。这些通常也采用MOCVD法。层15通常包含具有所期望的分布图的掺杂剂Zn以形成p-n结，且该分布图是层厚度的函数。例如，掺杂剂Zn的浓度通常在5×1017-3×1018cm-3范围内变动。
如图4所示，通常用MOCVD法在包层15上形成接触层16。层16包含用来提供所期望的电阻值的p型掺杂剂碳。优选地，掺杂剂的浓度在2×1018-3×1019cm-3的范围内。接触层16通常是InGaAs，但如果是碳在其中用作P型掺杂剂，也可采用其它材料如InGaAsP。层16通常厚度为0.1-0.5μm。
通过分别在器件的上表面和底面上淀积电极17、18和19完成了这种结构。这些电极通常是Ti/Pt/Au或Be-Au，且用电子束蒸发进行淀积。
尽管参考EML器件对本发明进行了描述，很显然，对于其它需要p型接触层的光学器件也是有用的。例如，如图5所示的冠状平台埋入异质结构(CMBH)激光器，包括通常为InP的衬底30，在其上形成有n型内包层31、激活区与波导32、用于发光和阻挡的区域33和34、与激活区相邻接的层35。激活区通常包括MQW或InGaAsP的体层，阻挡区33和34通常包括InP。在波导和激活区上形成通常包括InP的p型包层35。然后生长作为接触层的层36。接触层36是InGaAs，包含浓度在1×1018-3×1019cm-3范围内的p型掺杂剂碳。
对该器件进行了测试，发现与具有Zn掺杂接触层的相似器件相比，这些激光器的阈值电流更低，倾斜效率更高。而且，作为没有Zn扩散进入激活区的结果，根据本发明制造的器件的激光器空腔的内损更低。

Claims (7)

1.一种光学器件(10)，包括半导体波导区(14)，以及与波导区相邻接地形成的具有包含Zn的掺杂剂的包层区(15)，其特征在于：
在波导区上形成选自InGaAs和InGaAsP的半导体接触区(16)，该接触区具有用来提供足够的导电性的包含碳的p型掺杂剂，以使其与波导区低电阻接触。
2.如权利要求1所述的器件，其中：所述掺杂剂的浓度在1×1018-3×1019cm-3范围内。
3.如权利要求1所述的器件，其中：所述器件为电吸收调制激光器。
4.如权利要求1所述的器件，其中：所述器件为冠状平台埋入异质结构激光器。
5.一种制造光学器件(10)的方法，包括下列步骤：在衬底(13)上外延生长形成半导体波导区(14)；形成与所述波导区相邻接的包层区(15)，该包层区具有包含Zn的掺杂剂，其特征在于：
在波导区上外延生长形成选自InGaAs和InGaAsP的接触区(16)，该接触层具有用来提供足够的导电性的包含碳的p型掺杂剂，以使其与波导区低电阻接触。
6.如权利要求5所述的方法，其中：所述掺杂剂的浓度在1×1018-3×1019cm-3的范围内。
7.如权利要求5所述的方法，其中：所述接触区用有机金属化学汽相淀积法形成。
CN99108378A 1998-06-12 1999-06-11 具有碳掺杂接触层的光学器件 Pending CN1239342A (zh)

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