CN1235368A - 具有改进栓塞电导率的层叠电容器 - Google Patents

具有改进栓塞电导率的层叠电容器 Download PDF

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Publication number
CN1235368A
CN1235368A CN99106356A CN99106356A CN1235368A CN 1235368 A CN1235368 A CN 1235368A CN 99106356 A CN99106356 A CN 99106356A CN 99106356 A CN99106356 A CN 99106356A CN 1235368 A CN1235368 A CN 1235368A
Authority
CN
China
Prior art keywords
electrode
bombarding
stacked capacitor
plug
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN99106356A
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English (en)
Chinese (zh)
Inventor
沈华
J·赫普夫纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of CN1235368A publication Critical patent/CN1235368A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
CN99106356A 1998-05-08 1999-05-07 具有改进栓塞电导率的层叠电容器 Pending CN1235368A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/074,882 US6046059A (en) 1998-05-08 1998-05-08 Method of forming stack capacitor with improved plug conductivity
US09/074882 1998-05-08

Publications (1)

Publication Number Publication Date
CN1235368A true CN1235368A (zh) 1999-11-17

Family

ID=22122235

Family Applications (1)

Application Number Title Priority Date Filing Date
CN99106356A Pending CN1235368A (zh) 1998-05-08 1999-05-07 具有改进栓塞电导率的层叠电容器

Country Status (7)

Country Link
US (2) US6046059A (enExample)
EP (1) EP0955679B1 (enExample)
JP (1) JP2000031418A (enExample)
KR (1) KR100372404B1 (enExample)
CN (1) CN1235368A (enExample)
DE (1) DE69918219T2 (enExample)
TW (1) TW410429B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174799B1 (en) * 1999-01-05 2001-01-16 Advanced Micro Devices, Inc. Graded compound seed layers for semiconductors
US6624076B1 (en) * 2000-01-21 2003-09-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6214661B1 (en) * 2000-01-21 2001-04-10 Infineon Technologoies North America Corp. Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device
US6358855B1 (en) 2000-06-16 2002-03-19 Infineon Technologies Ag Clean method for recessed conductive barriers
US6297123B1 (en) * 2000-11-29 2001-10-02 United Microelectronics Corp. Method of preventing neck oxidation of a storage node
US6432725B1 (en) 2001-09-28 2002-08-13 Infineon Technologies Ag Methods for crystallizing metallic oxide dielectric films at low temperature
US6515325B1 (en) * 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same
US7231839B2 (en) * 2003-08-11 2007-06-19 The Board Of Trustees Of The Leland Stanford Junior University Electroosmotic micropumps with applications to fluid dispensing and field sampling
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
JP7632764B1 (ja) * 2023-06-16 2025-02-19 株式会社村田製作所 キャパシタ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381302A (en) * 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US6093615A (en) * 1994-08-15 2000-07-25 Micron Technology, Inc. Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug
JPH0945877A (ja) * 1995-07-31 1997-02-14 Matsushita Electron Corp 容量素子の製造方法
JP3388089B2 (ja) * 1996-04-25 2003-03-17 シャープ株式会社 不揮発性半導体メモリ素子の製造方法
KR100226772B1 (ko) * 1996-09-25 1999-10-15 김영환 반도체 메모리 장치 및 그 제조방법
KR100445059B1 (ko) * 1997-06-30 2004-11-16 주식회사 하이닉스반도체 반도체장치의캐패시터제조방법

Also Published As

Publication number Publication date
US6313495B1 (en) 2001-11-06
EP0955679B1 (en) 2004-06-23
DE69918219D1 (de) 2004-07-29
US6046059A (en) 2000-04-04
KR19990088068A (ko) 1999-12-27
DE69918219T2 (de) 2005-07-28
EP0955679A3 (en) 2002-01-16
JP2000031418A (ja) 2000-01-28
TW410429B (en) 2000-11-01
EP0955679A2 (en) 1999-11-10
KR100372404B1 (ko) 2003-02-17

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication