KR100372404B1 - 개선된 플러그 도전성을 가진 적층 캐패시터 - Google Patents

개선된 플러그 도전성을 가진 적층 캐패시터 Download PDF

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Publication number
KR100372404B1
KR100372404B1 KR10-1999-0016143A KR19990016143A KR100372404B1 KR 100372404 B1 KR100372404 B1 KR 100372404B1 KR 19990016143 A KR19990016143 A KR 19990016143A KR 100372404 B1 KR100372404 B1 KR 100372404B1
Authority
KR
South Korea
Prior art keywords
electrode
plug
stacked capacitor
impinging
diffusion barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-1999-0016143A
Other languages
English (en)
Korean (ko)
Other versions
KR19990088068A (ko
Inventor
후아 션
요아힘 회프너
Original Assignee
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 지멘스 악티엔게젤샤프트 filed Critical 지멘스 악티엔게젤샤프트
Publication of KR19990088068A publication Critical patent/KR19990088068A/ko
Application granted granted Critical
Publication of KR100372404B1 publication Critical patent/KR100372404B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
KR10-1999-0016143A 1998-05-08 1999-05-06 개선된 플러그 도전성을 가진 적층 캐패시터 Expired - Fee Related KR100372404B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/074,882 US6046059A (en) 1998-05-08 1998-05-08 Method of forming stack capacitor with improved plug conductivity
US09/074,882 1998-05-08
US9/074,882 1998-05-08

Publications (2)

Publication Number Publication Date
KR19990088068A KR19990088068A (ko) 1999-12-27
KR100372404B1 true KR100372404B1 (ko) 2003-02-17

Family

ID=22122235

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1999-0016143A Expired - Fee Related KR100372404B1 (ko) 1998-05-08 1999-05-06 개선된 플러그 도전성을 가진 적층 캐패시터

Country Status (7)

Country Link
US (2) US6046059A (enExample)
EP (1) EP0955679B1 (enExample)
JP (1) JP2000031418A (enExample)
KR (1) KR100372404B1 (enExample)
CN (1) CN1235368A (enExample)
DE (1) DE69918219T2 (enExample)
TW (1) TW410429B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174799B1 (en) * 1999-01-05 2001-01-16 Advanced Micro Devices, Inc. Graded compound seed layers for semiconductors
US6624076B1 (en) * 2000-01-21 2003-09-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6214661B1 (en) * 2000-01-21 2001-04-10 Infineon Technologoies North America Corp. Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device
US6358855B1 (en) 2000-06-16 2002-03-19 Infineon Technologies Ag Clean method for recessed conductive barriers
US6297123B1 (en) * 2000-11-29 2001-10-02 United Microelectronics Corp. Method of preventing neck oxidation of a storage node
US6432725B1 (en) 2001-09-28 2002-08-13 Infineon Technologies Ag Methods for crystallizing metallic oxide dielectric films at low temperature
US6515325B1 (en) * 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same
US7231839B2 (en) * 2003-08-11 2007-06-19 The Board Of Trustees Of The Leland Stanford Junior University Electroosmotic micropumps with applications to fluid dispensing and field sampling
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
JP7632764B1 (ja) * 2023-06-16 2025-02-19 株式会社村田製作所 キャパシタ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990004900A (ko) * 1997-06-30 1999-01-25 김영환 반도체 장치의 캐패시터 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381302A (en) * 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US6093615A (en) * 1994-08-15 2000-07-25 Micron Technology, Inc. Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug
JPH0945877A (ja) * 1995-07-31 1997-02-14 Matsushita Electron Corp 容量素子の製造方法
JP3388089B2 (ja) * 1996-04-25 2003-03-17 シャープ株式会社 不揮発性半導体メモリ素子の製造方法
KR100226772B1 (ko) * 1996-09-25 1999-10-15 김영환 반도체 메모리 장치 및 그 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990004900A (ko) * 1997-06-30 1999-01-25 김영환 반도체 장치의 캐패시터 제조 방법

Also Published As

Publication number Publication date
CN1235368A (zh) 1999-11-17
US6313495B1 (en) 2001-11-06
EP0955679B1 (en) 2004-06-23
DE69918219D1 (de) 2004-07-29
US6046059A (en) 2000-04-04
KR19990088068A (ko) 1999-12-27
DE69918219T2 (de) 2005-07-28
EP0955679A3 (en) 2002-01-16
JP2000031418A (ja) 2000-01-28
TW410429B (en) 2000-11-01
EP0955679A2 (en) 1999-11-10

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