CN1227746C - 薄膜结构体的制造方法 - Google Patents
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Abstract
本发明涉及采用半导体加工技术形成薄膜结构体的制造方法,其目的是,提供一种能够减小热收缩时腐蚀膜与基板之间所产生的应力差的薄膜结构体的制造方法。为实现上述目的,在该薄膜结构体的制造方法中,形成于基板(1)上的腐蚀膜(51)由磷浓度设定为大于3mol%而小于4mol%的值的PSG膜形成。对于腐蚀膜(51),在其上形成薄膜层(53),在使该薄膜层(53)形成图案之后,通过腐蚀处理将其除去。
Description
技术领域
本发明涉及一种具有基板和薄膜体的薄膜结构体的制造方法,所说薄膜体在形成于该基板上的腐蚀膜上形成并通过将腐蚀膜除去而与基板相隔既定间隔配置。
背景技术
在适用本发明的这种薄膜结构体中,由于基板与腐蚀膜二者热收缩性能不同,例如在腐蚀膜成膜后进行热焙处理之后,基板与腐蚀膜之间会产生应力差,该应力差有时会导致基板或腐蚀膜或基板与腐蚀膜二者产生裂缝。
与此相关的现有的薄膜结构体的制造方法中,是在基板上形成TEOS(四乙基原硅酸盐、tetraethylorthosilicate)氧化膜作为腐蚀膜,在该TEOS氧化膜上形成薄膜体之后,将TEOS氧化膜除去的。
但是,在象现有技术那样以TEOS氧化膜形成腐蚀膜的情况下,存在着热收缩时腐蚀膜与基板之间产生应力差的问题。
发明内容
本发明的目的是,解决上述存在的问题,提供一种能够减小热收缩时腐蚀膜与基板之间所产生的应力差的薄膜结构体的制造方法。
作为本发明所涉及的薄膜结构体的制造方法的第1形式,是一种具有基板(1)以及在形成于所说基板上的腐蚀膜(51)上所形成的、通过将所说腐蚀膜除去而与所说基板相隔既定间隔配置的薄膜体(21、23、25)的薄膜结构体的制造方法,其中,所说腐蚀膜是由以大于3mol%的浓度值混入磷的氧化硅膜形成的。
根据该形式,由于腐蚀膜是由以大于3mol%的浓度值混入磷的氧化硅膜形成,因此,能够在抑制磷在氧化硅膜中发生偏析的同时,减小热收缩时腐蚀膜与基板之间所产生的应力差,并由此防止裂缝的产生。
作为本发明所涉及的薄膜结构体的制造方法的第2形式,将所说磷的所说浓度值设定为大于3mol%而小于4mol%的值。
根据该形式,由于将磷的浓度值设定为大于3mol%而小于4mol%的值,因此,能够在抑制磷在氧化硅膜中发生偏析的同时,减小热收缩时腐蚀膜与基板之间所产生的应力差。
作为本发明所涉及的薄膜结构体的制造方法的第3形式,所说腐蚀膜由PSG膜形成。
根据该形式,由于所说腐蚀膜由腐蚀速率高的PSG膜形成,因此,通过腐蚀处理能够很容易地将腐蚀膜除去。
作为本发明所涉及的薄膜结构体的制造方法的第4形式,所说腐蚀膜由BPSG膜形成。
根据该形式,由于所说腐蚀膜由腐蚀速率高的BPSG膜形成,因此,通过腐蚀处理能够很容易地将腐蚀膜除去。
此外,利用混入BPSG膜中的硼的影响可提高腐蚀膜的软溶。
作为本发明所涉及的薄膜结构体的制造方法的第5形式,所说基板构成加速度传感器所具备的传感器基板,所说薄膜体构成所说加速度传感器所具备的具有进行加速度检测功能的传感器部(3)的至少一部分。
根据该形式,能够防止在加速度传感器的传感器部的制造工序中产生裂缝。
通过下面的详细说明和附图,可进一步了解本发明的目的、特征、结构以及优点。
附图说明
图1是对应用本发明实施方式1所涉及的薄膜结构体的制造方法制造的半导体加速度传感器的主要部分的结构加以展示的俯视图。
图2是图1的A-A向剖视图。
图3和图4是对图2所示结构的制造工序加以展示的附图。
具体实施方式
1.实施方式1
如图1和图2所示,应用本发明实施方式1所涉及的薄膜结构体的制造方法制造的半导体加速度传感器具有作为传感器基板的基板1、以及形成于该基板1上的具有检测加速度的功能的传感器部3。
传感器部3如图1所示,具有作为可动电极发挥功能的质量体21、多个固定电极23、以及多个梁25。质量体21、固定电极23以及梁25相当于本发明的薄膜体,由向例如多晶硅等导电材料掺杂例如磷等杂质而成的掺杂型多晶硅形成。
质量体21与基板1相隔既定间隔配置,具有沿垂直于被检测加速度的方向B的方向C延伸的多个可动电极部21a。梁25与质量体21一体形成,具有将质量体21悬架在基板1上使质量体21具有复原力并能够向方向B移动的功能。各梁25具有:从基板1上突出的支持部25a、与该支持部25a之间的结合部25b、以及设在该结合部25b与质量体21的方向B上的端缘之间的弹簧部25c。通过该弹簧部25c发生弹性挠曲变形,使结合部25b与质量体21二者在方向B上的距离增大或减小。
各固定电极23,是在方向B上彼此相隔既定间隔沿方向C设置的。此外,固定电极23具有距基板1相隔既定间隔配置的作为悬浮的固定电极部23a、以及对该固定电极部23a进行支持的支持部23b。
如上所述的各固定电极23的固定电极部23a与质量体21的可动电极部21a在方向B上隔着间隔交替配置而构成电容器。并且,是依据该电容器的电容量随着可动电极部21a的移动而产生的变化进行加速度的检测的。
如图1和图2所示,基板1具有:由例如硅等半导体形成的基板本体31;形成于基板本体31上的作为第1绝缘膜的氧化硅膜33;在氧化硅膜33上有选择地形成的多条配线41、43、45;对配线41、43、45的表面以及氧化硅膜的表面有选择地加以覆盖的作为第2绝缘膜的氮化膜47。
配线41具有:在基板1上的与质量体21相向的相向区域以露出的状态配置在基板1上的露出部41a;配置在支持部25a的下方、与支持部25a在电气上相连接的接点部41b。配线43、45用来取出来自固定电极23的信号,经由其接点部43a、45a连接到各固定电极23上。
与此相对应,在氮化膜47上设有开窗部47a和孔部47b、47c。配线41的露出部41a通过开窗部47a从基板1上露出,并且,接点部41b与支持部25a在电气上相连接。配线43、45的接点部43a、45a通过孔部47b、47c与固定电极23在电气上相连接。
与这种半导体加速度传感器的结构相对应,在本实施方式中,以下述制造方法制造出质量体21、梁25以及固定电极23。
首先,如图3所示,在基板1上以氧化硅膜的PSG(磷硅酸盐玻璃、phosphosilicateglass)膜形成腐蚀膜51。在本实施方式中,通过将该PSG膜中磷的浓度设定为大于3mol%而小于4mol%的值,以减小热收缩时腐蚀膜51与基板1之间所产生的应力差。
在这里,作为磷浓度设定范围的基准的3mol%和4mol%的值是根据试验结果设定的。之所以设定3mol%这一下限,是由于若磷浓度低于该值,则不能够得到有效减小应力差的效果。而之所以设定4mol%这一上限,是由于若磷浓度大于该值,则磷会在PSG膜中发生偏析,进行腐蚀处理时腐蚀膜51中磷的偏析部分不能被完全除去而残留下来。
接下来,为形成支持部25a、23b而有选择地除去腐蚀膜51的一部分以形成锚孔部51a,在残留的腐蚀膜51上以及从锚孔部51a露出的基板1上,以例如掺杂型多晶硅等导电材料形成薄膜层53。以此得到图4所示的结构。
接下来,有选择地除去薄膜层53使之形成图案,以该薄膜层53的残留部分形成质量体21、梁25以及固定电极23。此时,该残留部分之中嵌入锚孔部51a内的部分成为支持部25a、23b,位于腐蚀膜51上的部分成为质量体21、弹簧部25c、结合部25b以及固定电极部23a。接下来,通过腐蚀处理将腐蚀膜51除去,得到图1和图2所示的结构。
如上所述,根据本实施方式,通过由以大于3mol%而小于4mol%的浓度值混入磷的PSG膜形成腐蚀膜51,使得能够在抑制磷在PSG膜中发生偏析的同时,减小热收缩时腐蚀膜51与基板1之间所产生的应力差,由此而能够防止在半导体加速度传感器的传感器部3的制造工序中产生裂缝。
此外,由于腐蚀膜51由腐蚀率高的PSG膜形成,因此,通过腐蚀处理能够很容易地将腐蚀膜除去。
2.实施方式2
本实施方式所涉及的薄膜结构体的制造方法也适用于图1和图2所示的半导体加速度传感器。此外,本实施方式所涉及的制造方法与前述实施方式1所涉及的制造方法之间的实质性差异在于腐蚀膜51的制造方法不同。因此,在这里,对于本实施方式所涉及的制造方法,仅就与实施方式1所涉及的制造方法之间的实质性差异进行说明。
本实施方式所涉及的制造方法中,腐蚀膜51是由磷浓度被设定在既定范围内的氧化硅膜的BPSG(硼磷酯盐玻璃borophosphosilicateglass)膜形成的。在本实施方式中,BPSG膜中磷的浓度同样设定为大于3mol%而小于4mol%的值。另外,BPSG膜中硼的浓度设定为例如2.2mol%等一般性的值。
这样,作为本实施方式,也同样能够在抑制磷在形成腐蚀膜51的BPSG膜中发生偏析的同时,减小热收缩时腐蚀膜51与基板1之间所产生的应力差,由此而能够防止在半导体加速度传感器的传感器部3的制造工序中产生裂缝。
此外,由于腐蚀膜51由腐蚀率高的BPSG膜形成,因此,通过腐蚀处理能够很容易地将腐蚀膜除去。
而且,利用混入于BPSG膜中的硼的影响可提高腐蚀膜51的软溶。
以上对本发明进行了详细说明,但在以上说明中,所有的结构均为例示,本发明并不限定于所列举的例子。在不超出本发明的范围内还能够想象出其它未作为例子加以展示的许多变型例。
Claims (4)
1.一种薄膜结构体的制造方法,所述薄膜结构体具有基板,以及在所说基板的上方与所说基板隔着间隔形成的薄膜层,其特征是,包括:
在所说基板上,由以大于3mol%而小于4mol%的浓度值混入磷的氧化硅膜形成腐蚀膜的工序;
将所说腐蚀膜有选择地除去的工序;
在所说腐蚀膜的残留部分上以及所说基板上形成所说薄膜层的工序;
将所说腐蚀膜的所说残留部分除去的工序。
2.如权利要求1所述的薄膜结构体的制造方法,其特征是,所说腐蚀膜由PSG膜形成。
3.如权利要求2所述的薄膜结构体的制造方法,其特征是,所说腐蚀膜由BPSG膜形成。
4.如权利要求1至3之一的权利要求所述的薄膜结构体的制造方法,其特征是,
所说基板构成加速度传感器所具备的传感器基板,
所说薄膜层构成所说加速度传感器所具备的具有进行加速度检测功能的传感器部的至少一部分。
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PCT/JP2001/006360 WO2003010828A1 (fr) | 2001-07-23 | 2001-07-23 | Procede de fabrication d'une structure a couche mince |
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CN1462482A CN1462482A (zh) | 2003-12-17 |
CN1227746C true CN1227746C (zh) | 2005-11-16 |
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US (1) | US6784011B2 (zh) |
JP (1) | JP4558315B2 (zh) |
KR (1) | KR100491855B1 (zh) |
CN (1) | CN1227746C (zh) |
DE (1) | DE10196643B4 (zh) |
TW (1) | TW514985B (zh) |
WO (1) | WO2003010828A1 (zh) |
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US6797534B1 (en) * | 2003-04-18 | 2004-09-28 | Macronix International Co., Ltd. | Method of integrating the fabrication process for integrated circuits and MEM devices |
JP2018179575A (ja) * | 2017-04-05 | 2018-11-15 | セイコーエプソン株式会社 | 物理量センサー、電子機器、および移動体 |
KR20200143605A (ko) | 2019-06-14 | 2020-12-24 | 삼성전자주식회사 | 열분해막을 이용한 반도체 소자의 제조 방법, 반도체 제조 장비 및 이를 이용하여 제조된 반도체 소자 |
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US555090A (en) * | 1896-02-25 | Secondary electric clock | ||
JPH0499026A (ja) | 1990-08-06 | 1992-03-31 | Kawasaki Steel Corp | 半導体装置 |
JP2780236B2 (ja) | 1993-01-21 | 1998-07-30 | キヤノン販売 株式会社 | 平担化膜の形成方法 |
JPH07142707A (ja) * | 1993-06-17 | 1995-06-02 | Kawasaki Steel Corp | Mosトランジスタの製造方法 |
US5616513A (en) * | 1995-06-01 | 1997-04-01 | International Business Machines Corporation | Shallow trench isolation with self aligned PSG layer |
US5922212A (en) * | 1995-06-08 | 1999-07-13 | Nippondenso Co., Ltd | Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body |
JPH08335706A (ja) * | 1995-06-08 | 1996-12-17 | Nippondenso Co Ltd | 半導体力学量センサの製造方法 |
US5550090A (en) * | 1995-09-05 | 1996-08-27 | Motorola Inc. | Method for fabricating a monolithic semiconductor device with integrated surface micromachined structures |
DE19600400C2 (de) | 1996-01-08 | 2002-05-16 | Infineon Technologies Ag | Mikromechanisches Bauteil mit planarisiertem Deckel auf einem Hohlraum und Herstellverfahren |
JP3163973B2 (ja) * | 1996-03-26 | 2001-05-08 | 日本電気株式会社 | 半導体ウエハ・チャック装置及び半導体ウエハの剥離方法 |
JP3893636B2 (ja) * | 1996-03-27 | 2007-03-14 | 日産自動車株式会社 | 微小機械の製造方法 |
US5882532A (en) * | 1996-05-31 | 1999-03-16 | Hewlett-Packard Company | Fabrication of single-crystal silicon structures using sacrificial-layer wafer bonding |
JP4000615B2 (ja) * | 1997-03-21 | 2007-10-31 | 日産自動車株式会社 | 微小機械の製造方法 |
US6228275B1 (en) * | 1998-12-10 | 2001-05-08 | Motorola, Inc. | Method of manufacturing a sensor |
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- 2001-07-23 KR KR10-2003-7003989A patent/KR100491855B1/ko active IP Right Grant
- 2001-07-23 WO PCT/JP2001/006360 patent/WO2003010828A1/ja active IP Right Grant
- 2001-07-23 JP JP2003516107A patent/JP4558315B2/ja not_active Expired - Lifetime
- 2001-07-23 DE DE10196643T patent/DE10196643B4/de not_active Expired - Lifetime
- 2001-07-23 CN CNB018161359A patent/CN1227746C/zh not_active Expired - Lifetime
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JPWO2003010828A1 (ja) | 2004-11-18 |
JP4558315B2 (ja) | 2010-10-06 |
DE10196643B4 (de) | 2008-12-11 |
US6784011B2 (en) | 2004-08-31 |
US20030186480A1 (en) | 2003-10-02 |
WO2003010828A1 (fr) | 2003-02-06 |
DE10196643T5 (de) | 2004-04-22 |
KR100491855B1 (ko) | 2005-05-27 |
TW514985B (en) | 2002-12-21 |
KR20030038753A (ko) | 2003-05-16 |
CN1462482A (zh) | 2003-12-17 |
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