CN1217567A - 在化学敏感型光刻胶上形成图形的方法 - Google Patents

在化学敏感型光刻胶上形成图形的方法 Download PDF

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Publication number
CN1217567A
CN1217567A CN98124457A CN98124457A CN1217567A CN 1217567 A CN1217567 A CN 1217567A CN 98124457 A CN98124457 A CN 98124457A CN 98124457 A CN98124457 A CN 98124457A CN 1217567 A CN1217567 A CN 1217567A
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CN
China
Prior art keywords
photoresist
chemical
blocking group
pattern
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN98124457A
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English (en)
Chinese (zh)
Inventor
吉井刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of CN1217567A publication Critical patent/CN1217567A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN98124457A 1997-11-06 1998-11-05 在化学敏感型光刻胶上形成图形的方法 Pending CN1217567A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP09304546A JP3077648B2 (ja) 1997-11-06 1997-11-06 化学増幅系レジストのパターン形成方法
JP304546/97 1997-11-06

Publications (1)

Publication Number Publication Date
CN1217567A true CN1217567A (zh) 1999-05-26

Family

ID=17934308

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98124457A Pending CN1217567A (zh) 1997-11-06 1998-11-05 在化学敏感型光刻胶上形成图形的方法

Country Status (4)

Country Link
US (1) US6210868B1 (ja)
JP (1) JP3077648B2 (ja)
KR (1) KR100299898B1 (ja)
CN (1) CN1217567A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100385622C (zh) * 2003-03-03 2008-04-30 三星电子株式会社 精细图形的形成方法
CN103928480A (zh) * 2013-01-16 2014-07-16 佳能株式会社 固态图像拾取设备及其制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001215734A (ja) 2000-02-04 2001-08-10 Tokyo Ohka Kogyo Co Ltd レジストパターンの表面欠陥減少方法及びそれに用いる表面欠陥減少用処理液
KR100456312B1 (ko) * 2002-07-19 2004-11-10 주식회사 하이닉스반도체 반도체 소자의 초미세 콘택홀 형성방법
JP3745717B2 (ja) 2002-08-26 2006-02-15 富士通株式会社 半導体装置の製造方法
US6861209B2 (en) * 2002-12-03 2005-03-01 International Business Machines Corporation Method to enhance resolution of a chemically amplified photoresist
US6977219B2 (en) * 2003-12-30 2005-12-20 Intel Corporation Solvent vapor-assisted plasticization of photoresist films to achieve critical dimension reduction during temperature reflow
JP2006220847A (ja) * 2005-02-09 2006-08-24 Toshiba Corp レジストパターン形成方法
KR100944336B1 (ko) * 2006-01-13 2010-03-02 주식회사 하이닉스반도체 반도체 소자의 미세패턴 형성 방법
US20090214985A1 (en) * 2008-02-27 2009-08-27 Tokyo Electron Limited Method for reducing surface defects on patterned resist features
JP2014175411A (ja) * 2013-03-07 2014-09-22 Canon Inc 固体撮像装置の製造方法
US8986562B2 (en) 2013-08-07 2015-03-24 Ultratech, Inc. Methods of laser processing photoresist in a gaseous environment

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04364021A (ja) 1991-06-11 1992-12-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
EP0524759A1 (en) * 1991-07-23 1993-01-27 AT&T Corp. Device fabrication process
US5580695A (en) * 1992-02-25 1996-12-03 Japan Synthetic Rubber Co., Ltd. Chemically amplified resist
JP2745443B2 (ja) 1993-01-22 1998-04-28 株式会社ソルテック レジストパターン形成方法
EP0608983B1 (en) * 1993-01-25 1997-11-12 AT&T Corp. A process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers
JPH09160259A (ja) 1995-12-06 1997-06-20 Fujitsu Ltd レジストパターンの形成方法
JPH10246959A (ja) 1997-03-05 1998-09-14 Mitsubishi Electric Corp レジストパターン形成方法およびレジスト材料
JPH10333341A (ja) 1997-06-02 1998-12-18 Fujitsu Ltd レジストパターン形成方法及び半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100385622C (zh) * 2003-03-03 2008-04-30 三星电子株式会社 精细图形的形成方法
CN103928480A (zh) * 2013-01-16 2014-07-16 佳能株式会社 固态图像拾取设备及其制造方法
US9806124B2 (en) 2013-01-16 2017-10-31 Canon Kabushiki Kaisha Solid state image pickup apparatus and method for manufacturing the same
CN103928480B (zh) * 2013-01-16 2018-02-16 佳能株式会社 固态图像拾取设备及其制造方法

Also Published As

Publication number Publication date
JPH11145031A (ja) 1999-05-28
JP3077648B2 (ja) 2000-08-14
KR19990045048A (ko) 1999-06-25
US6210868B1 (en) 2001-04-03
KR100299898B1 (ko) 2001-10-19

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication