CN121549087A - 蚀刻方法及等离子体处理装置 - Google Patents

蚀刻方法及等离子体处理装置

Info

Publication number
CN121549087A
CN121549087A CN202480047888.6A CN202480047888A CN121549087A CN 121549087 A CN121549087 A CN 121549087A CN 202480047888 A CN202480047888 A CN 202480047888A CN 121549087 A CN121549087 A CN 121549087A
Authority
CN
China
Prior art keywords
substrate
gas
etching method
plasma
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480047888.6A
Other languages
English (en)
Chinese (zh)
Inventor
胜沼隆幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN121549087A publication Critical patent/CN121549087A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
CN202480047888.6A 2023-08-02 2024-07-19 蚀刻方法及等离子体处理装置 Pending CN121549087A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023126146 2023-08-02
JP2023-126146 2023-08-02
PCT/JP2024/025935 WO2025028301A1 (ja) 2023-08-02 2024-07-19 エッチング方法及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
CN121549087A true CN121549087A (zh) 2026-02-17

Family

ID=94395213

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480047888.6A Pending CN121549087A (zh) 2023-08-02 2024-07-19 蚀刻方法及等离子体处理装置

Country Status (5)

Country Link
JP (1) JPWO2025028301A1 (https=)
KR (1) KR20260045816A (https=)
CN (1) CN121549087A (https=)
TW (1) TW202520375A (https=)
WO (1) WO2025028301A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2950785B2 (ja) * 1996-12-09 1999-09-20 セントラル硝子株式会社 酸化膜のドライエッチング方法
JPWO2021117534A1 (https=) * 2019-12-12 2021-06-17
US20220165578A1 (en) * 2020-11-25 2022-05-26 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP2022170130A (ja) * 2021-04-28 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びエッチング方法
JP7767024B2 (ja) * 2021-05-07 2025-11-11 東京エレクトロン株式会社 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
TW202520375A (zh) 2025-05-16
WO2025028301A1 (ja) 2025-02-06
KR20260045816A (ko) 2026-04-03
JPWO2025028301A1 (https=) 2025-02-06

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