TW202520375A - 蝕刻方法及電漿處理裝置 - Google Patents

蝕刻方法及電漿處理裝置 Download PDF

Info

Publication number
TW202520375A
TW202520375A TW113127299A TW113127299A TW202520375A TW 202520375 A TW202520375 A TW 202520375A TW 113127299 A TW113127299 A TW 113127299A TW 113127299 A TW113127299 A TW 113127299A TW 202520375 A TW202520375 A TW 202520375A
Authority
TW
Taiwan
Prior art keywords
substrate
gas
etching method
etching
substrate support
Prior art date
Application number
TW113127299A
Other languages
English (en)
Chinese (zh)
Inventor
勝沼隆幸
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202520375A publication Critical patent/TW202520375A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
TW113127299A 2023-08-02 2024-07-22 蝕刻方法及電漿處理裝置 TW202520375A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023126146 2023-08-02
JP2023-126146 2023-08-02

Publications (1)

Publication Number Publication Date
TW202520375A true TW202520375A (zh) 2025-05-16

Family

ID=94395213

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113127299A TW202520375A (zh) 2023-08-02 2024-07-22 蝕刻方法及電漿處理裝置

Country Status (5)

Country Link
JP (1) JPWO2025028301A1 (https=)
KR (1) KR20260045816A (https=)
CN (1) CN121549087A (https=)
TW (1) TW202520375A (https=)
WO (1) WO2025028301A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2950785B2 (ja) * 1996-12-09 1999-09-20 セントラル硝子株式会社 酸化膜のドライエッチング方法
JPWO2021117534A1 (https=) * 2019-12-12 2021-06-17
US20220165578A1 (en) * 2020-11-25 2022-05-26 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP2022170130A (ja) * 2021-04-28 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びエッチング方法
JP7767024B2 (ja) * 2021-05-07 2025-11-11 東京エレクトロン株式会社 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
WO2025028301A1 (ja) 2025-02-06
KR20260045816A (ko) 2026-04-03
CN121549087A (zh) 2026-02-17
JPWO2025028301A1 (https=) 2025-02-06

Similar Documents

Publication Publication Date Title
TW202316520A (zh) 蝕刻方法及蝕刻裝置
JP7721455B2 (ja) プラズマ処理方法及びプラズマ処理システム
TW202425121A (zh) 蝕刻方法及電漿處理裝置
KR20250021326A (ko) 에칭 방법 및 플라즈마 처리 장치
JP6063181B2 (ja) プラズマ処理方法、及びプラズマ処理装置
TW202333226A (zh) 蝕刻方法及電漿處理裝置
TW202437384A (zh) 蝕刻方法及電漿處理裝置
TW202520375A (zh) 蝕刻方法及電漿處理裝置
TW202412101A (zh) 蝕刻方法及電漿處理裝置
JP2023109497A (ja) エッチング方法及びプラズマ処理装置
TW202520374A (zh) 蝕刻方法及電漿處理裝置
WO2024203479A1 (ja) エッチング方法及びプラズマ処理装置
JP2026002318A (ja) エッチング方法及びプラズマ処理装置
CN118263120A (zh) 蚀刻方法和等离子体处理装置
TW202501616A (zh) 蝕刻方法及電漿處理裝置
WO2025173580A1 (ja) エッチング方法、及び、プラズマ処理装置
TW202449899A (zh) 蝕刻方法及電漿處理裝置
WO2025173578A1 (ja) エッチング方法、及び、プラズマ処理装置
TW202425054A (zh) 基板處理方法及電漿處理裝置
WO2026038483A1 (ja) エッチング方法及びプラズマ処理装置
TW202533314A (zh) 電漿處理方法及電漿處理裝置
JP2024035043A (ja) 基板処理方法及びプラズマ処理装置
KR20260017393A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
JP2025026361A (ja) エッチング方法及びプラズマ処理装置
WO2025204284A1 (ja) プラズマ処理装置及びプラズマ処理方法