CN1214150A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN1214150A
CN1214150A CN97193218A CN97193218A CN1214150A CN 1214150 A CN1214150 A CN 1214150A CN 97193218 A CN97193218 A CN 97193218A CN 97193218 A CN97193218 A CN 97193218A CN 1214150 A CN1214150 A CN 1214150A
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semiconductor device
compensation layer
carrier body
stress compensation
stress
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S·格雷特施
H·－L·阿尔特豪斯
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Siemens AG
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Abstract

半导体器件(1),例如一种功率激光二极管条形块,是固定在一个载体部件(2)上的。在半导体器件(1)和载体部件(2)之间设置一应力补偿层(3),该应力补偿层由一种材料组成,这种材料的热膨胀系数αth与半导体器件的材料的热膨胀系数相匹配,并且具有一很大的弹性模数。机械应力几乎完全单独由应力补偿层(3)在弹性延伸范围内所补偿。因此,可以制造高温稳定的和温度循环稳定的连接。

Description

半导体装置
本发明涉及一种按权利要求1的前序部分的半导体装置。在此所涉及的尤其是一种功率半导体器件，例如一种固定在散热器(热沉)上的功率激光二极管条状块，或者一种功率晶体管。
例如由德国公开文献DE4315580已知一种这样的半导体装置。其中描述了一种由激光二极管和一个冷却系统组成的结构，在这种结构中一个激光二极管条状块焊接在一个用铜薄片制成的微通道热沉(MKWS)上。为降低基于激光二级管条状块(例如由GaAs和AlxGa1-xAs层组成的装置)和MKWS的不同热膨胀所产生的应力，使用所谓的软焊料例如In,InSn或PbSn作为连接剂。软焊料具有很好的塑性变形性能，并且在塑性延伸范围内补偿机械应力。
上述结构的一个缺点在于，在激光二极管条状块和MKWS之间的焊料连接只有很低的温度稳定性和低的温度循环稳定性，直到基于反复的在塑性延伸范围内承受负载，该连接出现部分地断裂或者彻底地断裂。激光二极管条状块从MKWS上部分扯断或者彻底扯断将导致热传导的恶化，由以及导致在激光二极管条状块中的一种非均匀电流分布，并且在极端情况下可能导致其彻底毁坏。
显然，这种类型的问题不只局限于激光二极管，而是出现在任何半导体器件装配在载体部件上的地方，该载体的热膨胀系数与半导体器件的热膨胀系数有很大偏离，而且在运行时经受较大的温度起伏。
因此，作为本发明的基础的任务是，开发一种半导体装置，在这种装置中，半导体器件与载体部件之间的连接具有改进的温度稳定性和高的温度循环稳定性。
这项任务通过具有权利要求1和权利要求3的特征的半导体装置得以解决。本发明优选的实施例在从属权利要求2以及4至11中给出。
根据本发明提出，在半导体器件和载体部件之间设置一种应力补偿层。该层由一种材料组成，其热膨胀系数接近半导体器件的材料的热膨胀系数，并且具有一种这样大的弹性模数，使该应力补偿层能在弹性延伸范围内补偿半导体器件与载体部件间基于不同的热膨胀产生的机械应力。该应力补偿层是借助一个第一硬焊料层与半导体器件的焊接和借助一个第二硬焊料层与载体部件的焊接连接在一起的。
应力补偿层主要优选在半导体器件和载体部件之间的整个连接区域内伸展，以此确保最大限度的应力补偿。在一个特别优选的实施结构中，第一硬焊料层在一侧与半导体器件直接邻界，和在另一侧直接与应力补偿层邻界。与此相似，第二个硬焊料层在一侧直接与应力补偿层邻界，在另一侧直接与载体部件邻界。在仅一个硬焊料层的情况下(应力补偿层是覆盖在半导体器件或者载体部件上的)，此硬焊料层在一侧与应力补偿层邻界和另一侧与半导体器件或与载体部件邻界。
本发明的半导体装置的优点是，由于载体部件和半导体器件的不同的热膨胀引起的机械应力不再如已知的当前技术所采用的方法是借助一种塑性可变形的软焊接材料来补偿，而是最大部分地由应力补偿层在弹性延伸范围内承受。因此该机械应力就是在应用很稳定的与软焊料相比很坚硬的连接层，优选硬焊料层，也不会转移到半导体器件内部。半导体器件内的机械应力，尤其是在半导体激光器元件情况下，可能导致对半导体器件功能的损害。因此，通过本发明可以在半导体器件和载体部件之间制造连接，这种连接具有高的温度牢固性(＞250℃)和极好的热循环稳定性。作为这种连接层的硬焊料适于使用例如AuSn,AuGe或AuSi。
一般硬焊料连接比已知的由可变形焊料连接具有高的多的机械的和热的稳定性。当然也可以利用具有上述特性的连接材料代替这类硬焊料。结合本发明“硬焊料”这个概念也包括这些材料。
在本发明的半导体装置的一个优选结构中，应力补偿层是一薄膜，例如一个钼引线框架(连接框架)。一个薄膜可以按有利的方式独立的，也就是说与半导体器件分开的制造，和具有机械上很稳定的结构。即在制造这种应力补偿层时没有必要放弃可能对半导体器件引入损伤的工艺步骤(例如高温处理)。
如果半导体器件装配在由应力补偿层材料制成的导体带上，对大量制造本发明的半导体装置是特别有利的。然后以简单的方式可以借助常规装配线廉价的对半导体器件进一步加工。这种实施结构的另一优点是，此应力补偿层可以与一连接片一起制造，并且从而同时作为半导体器件导通电流的电连接线。
解决该任务的另一种方法是，在半导体器件或载体部件的一个主平面上，例如借助溅射、蒸发或者借助另一种对专业人员认为适宜的已知方法覆盖一应力补偿层。该补偿层借助一种硬焊料层与载体部件或与半导体器件连接，并且该层主要由一种热膨胀系数与半导体器件材料的热膨胀系数相近的材料组成，并且该材料具有一种很大的弹性模数，使应力补偿层能够在弹性延伸范围内，基本上补偿由于半导体器件和载体部件的不同热膨胀所产生的机械应力。这种结构的优点是，在载体部件和应力补偿层之间或在半导体器件与载体部件之间仅还需要一硬焊料层。因此与上述第一种实施结构相比，可以有利的降低与形成硬焊料连接相联系的半导体器件的热负荷。在这里应力补偿层在半导体器件和载体部件之间的整个连接范围内延伸是有利的。
所有具有大弹性模数、高屈服应力和高温度稳定性的材料都适用于应力补偿层。作为GaAs或AlGaAs半导体器件的优选应力补偿层材料，可以以钼为例。同样例如钨、CuW合金和CuMo合金(Cu成分分别在10和20％之间)也具有应力补偿层材料的上述必要特性。所有这些材料即可以作为薄膜、也可以作为溅射、蒸发或电镀层制造，并且有利的是都具有良好的热导性。
本发明对于功率半导体器件，例如装配在散热器上的功率激光二极管或功率晶体管，尤其具有正面作用。在上述半导体器件以已知的方式通过工作运行迅速升温时，按条件散热器只有轻微的升温。根据这种情况，在这些构件中出现不同的热膨胀是不可避免的。由此所引起的在半导体器件与载体部件之间的机械应力，按本发明最大限度地由应力补偿层所抵消。因此，半导体器件的机械负荷，如果真有的话，也是极小的。
本发明也确实对一些经受环境温度起伏大的半导体装置有良好的影响，例如在汽车、飞机、炉体等中就是这种情况，并且其中半导体器件被固定在载体部件上，其热膨胀系数与半导体器件的热膨系数有明显的差别。作为示例这里可以提出在Cu引线框架上的Si或Ⅲ-V半导体器件。
在本发明半导体装置的一特别优选的实施结构中，半导体器件具有AlxGa1-xAs(0≤x≤1)材料，和/或载体部件主要由金属材料、由具有良好热导性的半导体材料或金刚石组成。
结合附图1至5，由下面4个实施例的说明得到本发明的其它优点、特点和目的性。
这些附图是：
图1本发明半导体装置第一实施例示意性截面图，
图2本发明半导体装置第二实施例平面示意图，
图3本发明半导体装置第三实施例示意性截面图，
图4本发明半导体装置第四实施例示意性截面图，
图5在本发明半导体装置第三实施例的一特殊实施结构上的平面示意图。
在图1所示的第一实施例中，在一个载体部件2上固定一半导体器件1。半导体器件1例如是功率激光二极管、功率激光二级管条状块、功率晶体管或者另外一种具有为确定运行所要求的电连接9、10的半导体器件。载体部件2例如是一种常规的散热器、该种散热器例如是由Cu、Si、金刚石或由一种其它的导热良好的材料组成，或者是一种电接线板，该接线板又可以是由铜或由另一种其它的导电良好的材料组成。当然一个散热器，假定这个散热器是导电的，同时可以用作半导体器件的电连接。
在半导体器件1和载体部件2之间有一个应力补偿层3，例如一个钼薄膜(例如厚度在20和300μm之间)或者一个由另一种材料制成的薄膜，该种薄膜具有上面所述的特性，特别是具有大的弹性模数和具有一种其热膨胀系数与半导体器件1的材料相近的膨胀系数。这个应力补偿层3借助连接层4、5一方面与半导体器件1和另一方面与载体部件2硬连接，并且延伸到半导体器件1和载体部件2之间的整个连接区域13内。一种硬焊料例如AuSn、AuGe或者AuSi适于作为连接层4、5的材料。
在图2中示出示意性平面图的第二实施例中，应力补偿层2具有一个接线片6。在此实施例中应力补偿层3同时用作半导体器件的电连接(引线框架)。有关应力补偿层3的材料和有关连接层4、5，本实施例与上述图1所述实施例相同。
图3的实施例与两个上述实施例相比其差别是，如图3所表明的，这里在半导体器件1和应力补偿层3之间只有一个连接层4。该连接层4又是由一种硬焊料组成的，并且应力补偿层3是直接安置在载体部件2的主平面7上。作为一种这类应力补偿层3的制造方法，适于采用例如溅射、蒸发、电镀或者另一种对专业人员已知的适当方法。但是也可以想到，将一个预先制好的应力补偿层3借助扩散熔焊或者阳极键合固定在载体部件2上，其条件是应力补偿层3和载体部件2应用了适用于这种方法的材料。
如图5所示，然后应力补偿层3也可以配置一接线片6，如果该接线片和图3所示的实施例一样是安置在载体部件2上。该具有接线片6的应力补偿层3可以例如借助在载体部件2上应力补偿层材料的结构化覆盖(溅射、蒸发或类似方法)制造。
在图4示意性示出的第四实施例中，应力补偿层3安置在半导体器件1的主平面8上。在载体部件2与应力补偿层3之间有一连接层5，该层又是优先由硬焊料组成。此应力补偿层又可以是借助溅射、蒸发或类似方法覆盖在半导体器件1的下侧。
最后还应指出，如图3中通过虚线所表示，在本发明半导体装置的另一优选实施结构中，在半导体器件1上侧的电连接9经一连接层12与连接层11连接，该连接层是用与应力补偿层3相同的材料制成的。因此基于半导体器件1和载体部件2的不同热膨胀，在半导体器件1中引起的机械应力可以得到进一步降低。显而易见本发明的这一改进结构可以配置在上述四个实施例的每一个中。

Claims (11)

1、半导体装置，其中一半导体器件固定在一个载体部件上，其特征在于，在半导体器件(1)和载体部件(2)之间设置一应力补偿层(3)，该补偿层由一种材料组成，该材料的热膨胀系数与半导体器件(1)的材料热膨胀系数相区配，并且具有很大的弹性模数，使得该应力补偿层能补偿半导体器件(1)和载体部件(2)之间的机械应力，以及应力补偿层(3)借助一第一硬焊料层(4)与半导体器件(1)连接，和借助一第二硬焊料层(5)与载体部件(2)连接。
2、按利要求1的半导体装置，其特征在于，应力补偿层(3)是一薄膜，它主要由钼组成。
3、半导体装置，其中一半导体器件固定在一个载体部件上，其特征在于，在半导体器件(1)的一个主平面(8)上，或在载体部件(2)的一个主面(7)上覆盖一应力补偿层(3)，应力补偿层(3)借助一硬焊料层(5或4)与载体部件(2)或与半导体器件(1)连接，且应力补偿层(3)是由一种材料组成的，其热膨胀系数与半导体器件(1)的材料的热膨胀系数相区配，并且具有很大的弹性模数，使得该应力补偿层(3)能补偿半导体器件(1)和载体部件(2)之间的机械应力。
4、按权利要求3的半导体装置，其特征在于，应力补偿层(3)是借助溅射或蒸发覆盖上的。
5、按权利要求1至4之一的半导体装置，其特征在于，半导体器件(1)具有AlxGa1-xAs(0≤x≤1)。
6、按权利要求5的半导体装置，其特征在于，应力补偿层(3)主要由钼组成。
7、按权利要求1至6之一的半导体装置，其特征在于，载体部件(2)由一种金属材料、由半导体材料或由金刚石组成。
8、按权利要求1至7之一的半导体装置，其特征在于，半导体器件(1)是一种功率半导体器件，和载体部件(2)是一种热沉。
9、按权利要求1至8之一的半导体装置，其特征在于，半导体器件(1)是一种功率半导体激光器条形块。
10、按权利要求1至9之一的半导体装置，其特征在于，应力补偿层(3)在半导体器件(1)和载体部件(2)之间的整个连接范围(13)内延伸。
11、按权利要求1至10之一的半导体装置，其特征在于，应力补偿层(3)具有一接线片(6)。
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