CN121306894A - 等离子体处理装置和等离子体处理方法 - Google Patents

等离子体处理装置和等离子体处理方法

Info

Publication number
CN121306894A
CN121306894A CN202511470279.4A CN202511470279A CN121306894A CN 121306894 A CN121306894 A CN 121306894A CN 202511470279 A CN202511470279 A CN 202511470279A CN 121306894 A CN121306894 A CN 121306894A
Authority
CN
China
Prior art keywords
edge ring
voltage
plasma processing
power supply
delay time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202511470279.4A
Other languages
English (en)
Chinese (zh)
Inventor
鸟井夏实
永海幸一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN121306894A publication Critical patent/CN121306894A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202511470279.4A 2020-07-16 2021-07-08 等离子体处理装置和等离子体处理方法 Pending CN121306894A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-122121 2020-07-16
JP2020122121A JP7536540B2 (ja) 2020-07-16 2020-07-16 プラズマ処理装置及びプラズマ処理方法
CN202110773998.9A CN113948364B (zh) 2020-07-16 2021-07-08 等离子体处理装置和等离子体处理方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN202110773998.9A Division CN113948364B (zh) 2020-07-16 2021-07-08 等离子体处理装置和等离子体处理方法

Publications (1)

Publication Number Publication Date
CN121306894A true CN121306894A (zh) 2026-01-09

Family

ID=79293568

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202511470279.4A Pending CN121306894A (zh) 2020-07-16 2021-07-08 等离子体处理装置和等离子体处理方法
CN202110773998.9A Active CN113948364B (zh) 2020-07-16 2021-07-08 等离子体处理装置和等离子体处理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202110773998.9A Active CN113948364B (zh) 2020-07-16 2021-07-08 等离子体处理装置和等离子体处理方法

Country Status (4)

Country Link
US (2) US11646181B2 (enExample)
JP (1) JP7536540B2 (enExample)
CN (2) CN121306894A (enExample)
TW (1) TW202209934A (enExample)

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JP7536540B2 (ja) * 2020-07-16 2024-08-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7534235B2 (ja) * 2021-02-01 2024-08-14 東京エレクトロン株式会社 フィルタ回路及びプラズマ処理装置
KR20230159397A (ko) * 2021-03-23 2023-11-21 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP7719860B2 (ja) * 2021-04-23 2025-08-06 東京エレクトロン株式会社 プラズマ処理装置及び基板処理方法
TW202331780A (zh) * 2021-09-15 2023-08-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
KR20250084933A (ko) * 2022-09-30 2025-06-11 도쿄엘렉트론가부시키가이샤 기판 처리 시스템
CN120077467A (zh) * 2023-09-29 2025-05-30 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
WO2025069736A1 (ja) * 2023-09-29 2025-04-03 東京エレクトロン株式会社 プラズマ処理装置及び基板処理システム
WO2025182632A1 (ja) * 2024-02-28 2025-09-04 東京エレクトロン株式会社 プラズマ処理装置
CN120413399A (zh) * 2025-04-25 2025-08-01 北京北方华创微电子装备有限公司 聚焦环电压控制方法、装置及半导体工艺设备

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DE502006009308D1 (de) * 2006-12-14 2011-05-26 Huettinger Elektronik Gmbh Bogenentladungs-Erkennungseinrichtung, Plasma-Leistungsversorgung und Verfahren zum Erkennen von Bogenentladungen
JP4833890B2 (ja) 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
US9039871B2 (en) * 2007-11-16 2015-05-26 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current
JP5281309B2 (ja) * 2008-03-28 2013-09-04 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP5063520B2 (ja) * 2008-08-01 2012-10-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6224958B2 (ja) * 2013-02-20 2017-11-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN105122431A (zh) * 2013-03-13 2015-12-02 应用材料公司 脉冲式直流等离子体蚀刻方法以及设备
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US10047438B2 (en) * 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
KR20170024922A (ko) * 2015-08-26 2017-03-08 삼성전자주식회사 플라즈마 발생 장치
JP6441994B2 (ja) * 2017-05-16 2018-12-19 東京エレクトロン株式会社 多孔質膜をエッチングする方法
JP6826955B2 (ja) * 2017-06-14 2021-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7061922B2 (ja) * 2018-04-27 2022-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7296699B2 (ja) * 2018-07-02 2023-06-23 東京エレクトロン株式会社 ガス供給システム、プラズマ処理装置およびガス供給システムの制御方法
US10854427B2 (en) * 2018-08-30 2020-12-01 Applied Materials, Inc. Radio frequency (RF) pulsing impedance tuning with multiplier mode
JP6762410B2 (ja) * 2018-10-10 2020-09-30 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US10672589B2 (en) * 2018-10-10 2020-06-02 Tokyo Electron Limited Plasma processing apparatus and control method
JP7481823B2 (ja) * 2018-11-05 2024-05-13 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
TWI869392B (zh) * 2019-04-15 2025-01-11 美商應用材料股份有限公司 處理基板的方法
JP7462383B2 (ja) * 2019-04-15 2024-04-05 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置
US20210210355A1 (en) * 2020-01-08 2021-07-08 Tokyo Electron Limited Methods of Plasma Processing Using a Pulsed Electron Beam
JP7536540B2 (ja) * 2020-07-16 2024-08-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
KR20220009892A (ko) 2022-01-25
CN113948364A (zh) 2022-01-18
US20220020576A1 (en) 2022-01-20
JP7536540B2 (ja) 2024-08-20
US11646181B2 (en) 2023-05-09
CN113948364B (zh) 2025-10-31
TW202209934A (zh) 2022-03-01
JP2022018776A (ja) 2022-01-27
US20230260766A1 (en) 2023-08-17

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