CN121002235A - SiC基板及SiC复合基板 - Google Patents

SiC基板及SiC复合基板

Info

Publication number
CN121002235A
CN121002235A CN202380096444.7A CN202380096444A CN121002235A CN 121002235 A CN121002235 A CN 121002235A CN 202380096444 A CN202380096444 A CN 202380096444A CN 121002235 A CN121002235 A CN 121002235A
Authority
CN
China
Prior art keywords
sic
substrate
sic substrate
layer
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380096444.7A
Other languages
English (en)
Chinese (zh)
Inventor
宫风里纱
松岛洁
吉川润
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of CN121002235A publication Critical patent/CN121002235A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Laminated Bodies (AREA)
  • Carbon And Carbon Compounds (AREA)
CN202380096444.7A 2023-04-27 2023-11-14 SiC基板及SiC复合基板 Pending CN121002235A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-073297 2023-04-27
JP2023073297 2023-04-27
PCT/JP2023/040963 WO2024224665A1 (ja) 2023-04-27 2023-11-14 ＳｉＣ基板及びＳｉＣ複合基板

Publications (1)

Publication Number Publication Date
CN121002235A true CN121002235A (zh) 2025-11-21

Family

ID=93255813

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380096444.7A Pending CN121002235A (zh) 2023-04-27 2023-11-14 SiC基板及SiC复合基板

Country Status (5)

Country Link
US (1) US20260043171A1 (https=)
EP (1) EP4703502A1 (https=)
JP (1) JPWO2024224665A1 (https=)
CN (1) CN121002235A (https=)
WO (1) WO2024224665A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108140541A (zh) * 2015-09-15 2018-06-08 信越化学工业株式会社 SiC复合基板的制造方法
CN108138359A (zh) * 2015-10-02 2018-06-08 昭和电工株式会社 SiC单晶锭
US20210301422A1 (en) * 2019-03-11 2021-09-30 Ngk Insulators, Ltd. SiC COMPOSITE SUBSTRATE AND SEMICONDUCTOR DEVICE
CN114761629A (zh) * 2020-01-24 2022-07-15 日本碍子株式会社 双轴取向SiC复合基板以及半导体器件用复合基板
WO2023062850A1 (ja) * 2021-10-12 2023-04-20 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣ複合基板

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5944873B2 (ja) * 2013-09-20 2016-07-05 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法
JP6269854B2 (ja) * 2014-10-31 2018-01-31 富士電機株式会社 炭化珪素エピタキシャル膜の成長方法
JP6668674B2 (ja) 2015-10-15 2020-03-18 住友電気工業株式会社 炭化珪素基板
JP6200018B2 (ja) 2016-03-15 2017-09-20 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶ウェハ
JP7088210B2 (ja) 2017-12-08 2022-06-21 住友電気工業株式会社 炭化珪素基板
WO2021111835A1 (ja) 2019-12-02 2021-06-10 住友電気工業株式会社 炭化珪素基板および炭化珪素基板の製造方法
SE544999C2 (en) * 2021-03-11 2023-02-21 Kiselkarbid I Stockholm Ab System and method of producing monocrystalline layers on a substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108140541A (zh) * 2015-09-15 2018-06-08 信越化学工业株式会社 SiC复合基板的制造方法
CN108138359A (zh) * 2015-10-02 2018-06-08 昭和电工株式会社 SiC单晶锭
US20210301422A1 (en) * 2019-03-11 2021-09-30 Ngk Insulators, Ltd. SiC COMPOSITE SUBSTRATE AND SEMICONDUCTOR DEVICE
CN114761629A (zh) * 2020-01-24 2022-07-15 日本碍子株式会社 双轴取向SiC复合基板以及半导体器件用复合基板
WO2023062850A1 (ja) * 2021-10-12 2023-04-20 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣ複合基板

Also Published As

Publication number Publication date
WO2024224665A1 (ja) 2024-10-31
US20260043171A1 (en) 2026-02-12
EP4703502A1 (en) 2026-03-04
JPWO2024224665A1 (https=) 2024-10-31

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