CN121002114A - 树脂组合物、图案形成方法、电子器件的制造方法及聚合物 - Google Patents

树脂组合物、图案形成方法、电子器件的制造方法及聚合物

Info

Publication number
CN121002114A
CN121002114A CN202480023211.9A CN202480023211A CN121002114A CN 121002114 A CN121002114 A CN 121002114A CN 202480023211 A CN202480023211 A CN 202480023211A CN 121002114 A CN121002114 A CN 121002114A
Authority
CN
China
Prior art keywords
general formula
group
polymer
resin composition
structural unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480023211.9A
Other languages
English (en)
Chinese (zh)
Inventor
早川瞬
上田祐辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Publication of CN121002114A publication Critical patent/CN121002114A/zh
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L45/00Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/36Amides or imides
    • C08F222/40Imides, e.g. cyclic imides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/02Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F232/04Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having one carbon-to-carbon double bond
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L35/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least one other carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CN202480023211.9A 2023-03-29 2024-03-22 树脂组合物、图案形成方法、电子器件的制造方法及聚合物 Pending CN121002114A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023053506 2023-03-29
JP2023-053506 2023-03-29
PCT/JP2024/011256 WO2024203829A1 (ja) 2023-03-29 2024-03-22 樹脂組成物、パターン形成方法、電子デバイスの製造方法およびポリマー

Publications (1)

Publication Number Publication Date
CN121002114A true CN121002114A (zh) 2025-11-21

Family

ID=92906340

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480023211.9A Pending CN121002114A (zh) 2023-03-29 2024-03-22 树脂组合物、图案形成方法、电子器件的制造方法及聚合物

Country Status (5)

Country Link
JP (1) JP7677548B2 (https=)
KR (1) KR20250167010A (https=)
CN (1) CN121002114A (https=)
TW (1) TW202502856A (https=)
WO (1) WO2024203829A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006301278A (ja) * 2005-04-20 2006-11-02 Fuji Photo Film Co Ltd 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP6769139B2 (ja) * 2016-06-30 2020-10-14 住友ベークライト株式会社 ポリマー、感光性樹脂組成物および電子装置
JP7043756B2 (ja) * 2017-08-31 2022-03-30 住友ベークライト株式会社 感光性樹脂組成物、パターン形成方法、電子デバイスの製造方法、ポリマーおよびポリマーの製造方法

Also Published As

Publication number Publication date
WO2024203829A1 (ja) 2024-10-03
TW202502856A (zh) 2025-01-16
KR20250167010A (ko) 2025-11-28
JP7677548B2 (ja) 2025-05-15
JPWO2024203829A1 (https=) 2024-10-03

Similar Documents

Publication Publication Date Title
CN108388079B (zh) 抗蚀剂垫层组成物和使用所述组成物形成图案的方法
US6420084B1 (en) Mask-making using resist having SIO bond-containing polymer
CN111538210B (zh) 一种正性光刻胶组合物和形成光刻胶图案的方法
KR101832321B1 (ko) 자가 가교형 고분자, 이를 포함하는 레지스트 하층막 조성물 및 이를 이용한 패턴 형성 방법
KR20140085123A (ko) 시아누릭산 유도체, 상기 시아누릭산 유도체를 포함하는 레지스트 하층막용 조성물 및 상기 레지스트 하층막용 조성물을 사용한 패턴 형성 방법
JPWO2018230671A1 (ja) パターン形成方法及びeuvリソグラフィー用ケイ素含有膜形成組成物
US12313974B2 (en) Resist underlayer composition, and method of forming patterns using the composition
KR20180123024A (ko) 레지스트패턴 피복용 수용액 및 이를 이용한 패턴 형성방법
KR20220161306A (ko) 전자선 또는 극단 자외선 리소그래피용 레지스트 하층막 형성 조성물, 전자선 또는 극단 자외선 리소그래피용 레지스트 하층막 및 반도체 기판의 제조 방법
US20250044701A1 (en) Method for producing semiconductor substrate and silicon-containing composition
CN121002114A (zh) 树脂组合物、图案形成方法、电子器件的制造方法及聚合物
KR102834145B1 (ko) 규소 함유 조성물 및 반도체 기판의 제조 방법
KR102586108B1 (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
KR102563289B1 (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
KR20230020811A (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
JP2012153874A (ja) 親水性モノマー、それを含有する親水性フォトレジスト組成物、およびレジストパターン形成方法
CN118707807B (zh) 图案化组合物、图案化薄膜、图案化基底、半导体器件及其制造方法
TW202116833A (zh) 包含具有硬化性官能基之化合物之階差基板被覆組成物
JP2024092902A (ja) 感活性光線性または感放射線性樹脂組成物、パターン形成方法および電子デバイスの製造方法
TWI900155B (zh) 抗蝕劑底層組成物及使用所述組成物形成圖案的方法
JP2026005458A (ja) 樹脂組成物、パターン形成方法、電子デバイスの製造方法およびポリマー
KR102563287B1 (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
KR102456166B1 (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
US20250348002A1 (en) Resist underlayer compositions and methods of forming patterns using the compositions
KR102563288B1 (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination