CN120693790A - 半导体装置 - Google Patents

半导体装置

Info

Publication number
CN120693790A
CN120693790A CN202480012133.2A CN202480012133A CN120693790A CN 120693790 A CN120693790 A CN 120693790A CN 202480012133 A CN202480012133 A CN 202480012133A CN 120693790 A CN120693790 A CN 120693790A
Authority
CN
China
Prior art keywords
oxide
circuit
insulating layer
metal oxide
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480012133.2A
Other languages
English (en)
Chinese (zh)
Inventor
丰高耕平
八窪裕人
藤田雅史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN120693790A publication Critical patent/CN120693790A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
CN202480012133.2A 2023-03-03 2024-02-26 半导体装置 Pending CN120693790A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023032368 2023-03-03
JP2023-032368 2023-03-03
PCT/IB2024/051794 WO2024184718A1 (ja) 2023-03-03 2024-02-26 半導体装置

Publications (1)

Publication Number Publication Date
CN120693790A true CN120693790A (zh) 2025-09-23

Family

ID=92674229

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480012133.2A Pending CN120693790A (zh) 2023-03-03 2024-02-26 半导体装置

Country Status (4)

Country Link
JP (1) JPWO2024184718A1 (https=)
KR (1) KR20250159159A (https=)
CN (1) CN120693790A (https=)
WO (1) WO2024184718A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026078504A1 (ja) * 2024-10-10 2026-04-16 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107947763B (zh) * 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
JP2014199709A (ja) * 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 記憶装置、半導体装置
KR102341741B1 (ko) * 2014-10-10 2021-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로, 처리 유닛, 전자 부품, 및 전자 기기
US10177142B2 (en) * 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
US10423203B2 (en) * 2016-12-28 2019-09-24 Intel Corporation Flip-flop circuit with low-leakage transistors
JP2018195366A (ja) * 2017-05-19 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 半導体回路、駆動方法、および電子機器
TWI829663B (zh) * 2018-01-19 2024-01-21 日商半導體能源研究所股份有限公司 半導體裝置以及其工作方法

Also Published As

Publication number Publication date
WO2024184718A1 (ja) 2024-09-12
JPWO2024184718A1 (https=) 2024-09-12
KR20250159159A (ko) 2025-11-10

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