KR20250159159A - 반도체 장치 - Google Patents

반도체 장치

Info

Publication number
KR20250159159A
KR20250159159A KR1020257027959A KR20257027959A KR20250159159A KR 20250159159 A KR20250159159 A KR 20250159159A KR 1020257027959 A KR1020257027959 A KR 1020257027959A KR 20257027959 A KR20257027959 A KR 20257027959A KR 20250159159 A KR20250159159 A KR 20250159159A
Authority
KR
South Korea
Prior art keywords
insulating layer
oxide
circuit
metal oxide
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257027959A
Other languages
English (en)
Korean (ko)
Inventor
고우헤이 도요타카
유토 야쿠보
마사시 후지타
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20250159159A publication Critical patent/KR20250159159A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
KR1020257027959A 2023-03-03 2024-02-26 반도체 장치 Pending KR20250159159A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023032368 2023-03-03
JPJP-P-2023-032368 2023-03-03
PCT/IB2024/051794 WO2024184718A1 (ja) 2023-03-03 2024-02-26 半導体装置

Publications (1)

Publication Number Publication Date
KR20250159159A true KR20250159159A (ko) 2025-11-10

Family

ID=92674229

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257027959A Pending KR20250159159A (ko) 2023-03-03 2024-02-26 반도체 장치

Country Status (4)

Country Link
JP (1) JPWO2024184718A1 (https=)
KR (1) KR20250159159A (https=)
CN (1) CN120693790A (https=)
WO (1) WO2024184718A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026078504A1 (ja) * 2024-10-10 2026-04-16 株式会社半導体エネルギー研究所 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016082593A (ja) 2014-10-10 2016-05-16 株式会社半導体エネルギー研究所 論理回路、処理装置、電子部品および電子機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107947763B (zh) * 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
JP2014199709A (ja) * 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 記憶装置、半導体装置
US10177142B2 (en) * 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
US10423203B2 (en) * 2016-12-28 2019-09-24 Intel Corporation Flip-flop circuit with low-leakage transistors
JP2018195366A (ja) * 2017-05-19 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 半導体回路、駆動方法、および電子機器
TWI829663B (zh) * 2018-01-19 2024-01-21 日商半導體能源研究所股份有限公司 半導體裝置以及其工作方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016082593A (ja) 2014-10-10 2016-05-16 株式会社半導体エネルギー研究所 論理回路、処理装置、電子部品および電子機器

Also Published As

Publication number Publication date
WO2024184718A1 (ja) 2024-09-12
JPWO2024184718A1 (https=) 2024-09-12
CN120693790A (zh) 2025-09-23

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Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)