CN1203538C - 使用粘结剂制造半导体器件 - Google Patents
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Abstract
通过使用与堆栈中使用的焊料预型件分离的或是包括在粘性浆料形式的焊料中的粘结体完成了半导体组件的堆栈中各个组件的临时自粘结。粘结体可以包括相当高纯度的水,并且相邻部件的粘结是通过水的表面张力取得的。在一个最好是在保护性非氧化气氛中进行的单一的加热步骤期间,水被完全蒸发,同时焊料预型件被加热,形成希望的焊接点。
Description
本发明涉及半导体器件的制造,特别是在部件之间焊接点形成之前和期间,在器件部件堆栈(stack)内以自对准关系将器件部件临时粘结在一起。
在一种已知的半导体器件制造方法中,将包括插入的焊料片在内的多个器件部件相互堆叠地装载到一个夹具型腔中,然后加热夹具以熔化焊料片,形成焊接在一起的部件的堆栈。例如,装载的部件可以包括一个第一接线端引线,一个安放在第一引线表面上的第一焊料片,一个安放在第一焊料片上的半导体芯片(或基片(die)),一个安放在芯片上的第二焊料片,最后是一个与第二焊料片接触的第二接线端引线。
在制造过程中,夹具沿着把各个部件顺序地装载到夹具中的组装通过连续工作台(assembly past successive work stations)移动,然后装载好的夹具通过一个用于加热和回流焊料的炉子。产生的一个问题是,夹具的移动和工作台的振动可能造成部件在夹具型腔内的横向位移,导致不合格器件部件焊接。另一个问题是,夹具一般是用铝、石墨、或铜-石墨之类的耐高温材料制造的。夹具的大的热量可能对回流过程造成不良影响。例如,热量有时造成不稳定的、高度可变的结果。
一种替代方法是以粘结剂浆料的形式提供焊料,例如,一种焊料颗粒与一种具有浆状稠度的粘结剂基料的混合物。这种方法的一个优点是一般不需要夹具,因为粘结剂浆料能够保持部件对准。这种浆料的问题是,根据使用的浆料,在焊接过程完成后,可能需要附加的清理过程来除去基料。此外,这种浆料的粘结强度通常不足以在焊料回流过程中保持部件的对准。一般情况下,尽管粘结剂浆料形式的焊料被广泛地使用并且通常能够获得满意的结果,但是仍然需要有一种替代和改进的自粘结部件堆叠方法。
根据本发明,通过利用与堆栈中使用的焊料预型件分离的或是包括在粘性浆料形式的焊料中的粘结体取得了半导体组件的堆栈中各组件的临时自粘结。
根据本发明的一个实施例,粘结体包括相当高纯度的水,并且相邻部件的粘结是通过水的表面张力取得的。在一个最好在是在保护性非氧化气氛中进行的单一的加热步骤期间,水被完全蒸发,同时焊料预型件被加热形成希望的焊接点。
根据本发明的另一个实施例,粘结体是市场上可买到的,具有可被熔融焊料湿润性质的,并且在最终器件的操作温度下是化学和物理稳定的粘结剂。在一个优选实施例中,粘结体具有可与被形成的焊接点的厚度比较的,但是比焊接点包围的总横向面积小的预选固定尺寸。以这种方式,粘结体起到间隔件的作用,同时对通过焊接点和器件组件本身的电流和热的流动只有最小的阻碍。
粘结体可以用作与焊料分离的组件(例如,小水滴)或作为焊料中的组件以形成自粘结焊料浆料。在后一种情况下,粘结体永久地嵌在完成的器件中的焊接点内。
图1示出了用于形成包括多个堆叠在一起的组件的半导体器件的惯用过程;
图2示出了在焊接处理完成后图1的半导体器件;
图3示出了根据本发明的,用于形成包括多个堆叠在一起的组件的半导体器件的过程;
图4(a)示出了在焊接过程完成后,根据本发明原理形成的半导体器件;
图4(b)示出了利用可以在本发明中使用的粘结剂和金属组件的焊接点的一个示例。
如上所述,半导体器件制造中一个已知实践是把器件的多个组件垂直地堆叠在一个组装夹具的型腔内,然后加热夹具以回流放置在相邻器件组件之间的焊料体,以在相邻器件组件之间形成焊接点。图1中示出了这种现有技术实践的一个示例,图1示出了一个典型的两部分组装夹具,夹具包括一个叠放了一个石墨顶板14的石墨基板12,石墨顶板14具有一个完全通向基板的叠放表面部分18的开口16。尽管仅示出了一个单一的开口16(提供了一个夹具“型腔”),但是典型的制造夹具包含一个以行列布置的多个相同型腔的阵列,通过它可以成批地制造半导体器件。
本发明可以用于制造任意数量的不同类型的半导体器件,但是,为了举例说明,在这里结合半导体整流器的成批制造来说明本发明,其中每个半导体整流器包括一个单一的焊接在两个器件接线端之间的半导体二极管芯片。在如图1中所示的这种器件的已知制造方法中,装载到夹具型腔16中的器件组件包括一个下接线端22,一个第一焊料预型件24,一个半导体二极管芯片26,一个第二焊料预型件28,和一个上接线端30。在这个现有技术示例中,焊料预型件是相对刚性的(形状保持性),并且在最初提供时没有自粘结性。当利用已知的“取放(pitch and place)”机器人之类的组件传送机构首次将组件装载到夹具中时,可以把组件精确地横向定位在夹具型腔中,并且精确地轴向相互对准。图2示出了在处理完成后得到的半导体器件。在图1和2中,相同的参考号代表相同的元件。如图所示,产生的半导体器件包括焊接点32和34。
夹具一般是沿一个将器件组件顺序地装载到夹具中的组装线顺序通过操作台(assembly line past successive operating stations)移动。如上所述,问题是组装装置的振动可能造成组件在夹具型腔内的位移。
在另一个已知现有技术实践中,形成焊接的焊料浆料是用固体焊料颗粒和一种粘性熔剂载体混合制造的。在以较高的温度进行的最后回流加热和焊接点形成处理之前,当以适当的温度(这取决于熔剂的类型)预加热时,这种焊料浆料可以用于提供相邻组件的粘结。当使用这种类型的浆料和方法时,熔剂载体(已经成为残渣)在焊料的回流处理期间被排除到焊接点之外。然后通过清洁处理将其从表面清除,在完成的焊接点中仅留下焊料。
尽管没有示出,在一种已知实践中,在最初提供时焊料预型件或浆料中包含一种高导电材料的,例如铜的,小刚性间隔球。在预加热或最终加热的任何加热步骤期间,球体都不熔化或软化。预选直径的刚性球保留在最后焊接点中,并且保证了焊接点厚度不小于最小直径球体的直径。间隔球体没有粘性。
现在结合图3说明本发明的第一实施例。图3示出了与图1中所示的相同的半导体器件组件,但是增加了放置在每个焊料预型件24和28的两面的粘结体40,粘结体40用于把固体预型件粘结到中间放置了预型件的器件组件上。
图3中所示器件的组装方法可以与现有技术图1器件所用的相同,其差别在于四个额外“组件”,即,粘结体40,以图示顺序装载在夹具型腔中。另一个差别是不进行把焊料预型件软化到粘性状态的夹具预加热。粘结体提供了型腔内稳定堆栈中的组件的粘结。
在本发明的第一实施例中,图3所示粘结体40包括纯水滴,最好是去离子水。本发明的这个实施例一般只有有限的应用,因为水可以促使氧化,并且因为在达到特定焊料的熔点之前水可能蒸发。由于要把水滴用作粘结剂,水必须“湿润”接触表面。因此,尽管最好是以小的球形水滴的形式将水滴与图3中所示的其余组件顺序地装入夹具型腔中,但是由于水对部件的湿润性以及部件重量对水的作用,使水扩展成一个薄层。相邻组件之间的水的表面张力将使堆栈内的组件粘结。在回流处理期间,水被蒸发,从而留下焊料来焊接器件组件。
在本发明的一些实施例中可能希望在还原性气氛中进行回流处理,以防止器件组件的金属表面氧化。作为替代,可以用不是水的其它流体形成粘结体40,只要它具有高的表面张力。其它流体最好具有比水小的氧化作用。但是,这些流体的大多数是基于溶剂的,并且在它们的蒸发过程期间必须十分小心。
当如图3中所示安放好所有组件,水或其它液体的薄层40置于每个组件之间之后,将夹具通过一个炉子,并将所有组件加热到一个提高的温度。例如,对于典型的铅基焊料,温度应当提高到300℃以上,以形成焊接点。如上所述,最好是在还原性气氛中加热组件,特别是如果使用了水时。由于水在加热期间将蒸发,这个处理过程将产生与图2中所示的相同的工件,在图4(a)中也示出了这种工件。
如上所述,当使用的粘结体是水时,在最终加热和焊料回流之后,没有图3中所示的组件堆栈中使用的“粘结剂”遗留下来。但是,根据本发明的其它实施例,使用了遗留在如图4(b)中所示的完成工件中的粘结体。这些粘结体是从具有如下某种优选特性的市场上可买到的粘结剂中选出的。
具体地讲,为了仅需要少量的粘结剂,最好具有相当高的粘结强度。以这种方式,粘结剂与组件之间的界面占据了整个可用表面积的相当小的一部分。结果,最终焊接点的电和热性质仅取决于焊接点中的金属。此外,如果仅使用了少量的粘结剂,那么粘结剂本身不必是导电的。由于可以根据本发明制造各种不同尺寸的器件,因而在这里不对比热和导电性作出规定。熟悉本领域的人员应当根据希望的工件的特性选择粘结剂的性质。无论使用了何种类型的粘结剂,最终焊接点必须满足与没有使用粘结剂时相同的规定,例如,电参数和操作条件。从焊接点内使用粘结剂得到的一个额外利益是粘结剂可以起到内部结构的应力释放元件的作用。粘结剂执行这种功能的可能性取决于粘结剂的性质和制造的特定器件。
在本发明的一些实施例中,粘结剂是一种热固性材料。不幸的是,当前可用的热固性粘结剂一般不能经受高达300℃的温度,而不遭受某种程度的降解。但是,已经开发出在高达400℃温度下也是稳定的纯热塑性材料,或热塑性和热固性材料的混合物。在本发明中使用这种塑料是特别有利的。
使用的焊料可以是能够嵌入粘结剂的焊料合金或其它金属。例如,一种市场上可以买到的叫作“导电粘结剂”的产品,它是由其中嵌有金属(通常是银)颗粒的热固性环氧树脂形成的。尽管这种材料可能适合于组装某些半导体器件,但是它的热和导电性当前不能满足电力整流器的使用。可以以在室温下已经是粘性的预型件的形式提供粘结剂和焊料,从而在一开始就能把所有组件堆叠定位。作为替代,可以以能够容易地从注射器分配的粘性浆料的形式提供粘结剂和焊料。如果使用预型件,那么可以通过与用于安排组件堆栈的相同的“取放”系统将它们定位,只要适当地考虑预型件的粘性。在另一种替代中,在一个两步骤操作中施加焊料(浆料或预型件)和粘结剂。由于可以相互独立地选择焊料和粘结剂从而可以为它们每个选择更好的材料,因而这种处理过程是有利的。可以根据每种材料的不同性质来选择材料。
Claims (11)
1.一种组装包括相互堆叠在一起的多个接线端和至少一个半导体组件的半导体器件的方法,所述方法包括步骤:
提供第一接线端,第一焊料预型件,第一半导体组件,第二焊料预型件,和第二接线端;
提供第一,第二,第三和第四粘结体;
把第一接线端,第一粘结体,第一焊料预型件,第二粘结体,第一半导体组件,第三粘结体,第二焊料预型件,第四粘结体,和第二接线端顺序地相互堆叠;和
把堆栈加热到足以软化焊料预型件的温度,从而形成焊接点。
2.根据权利要求1所述的方法,其中所述第一,第二,第三和第四粘结体是流体小滴,所述流体小滴湿润其接触的表面。
3.根据权利要求1所述的方法,其中所述第一,第二,第三和第四粘结体是水滴。
4.根据权利要求3所述的方法,其中所述水滴是去离子水滴。
5.根据权利要求1所述的方法,其中加热堆栈的步骤包括在还原性气氛中加热堆栈的步骤。
6.根据权利要求1所述的方法,其中堆叠步骤是在一个夹具的型腔中执行的。
7.根据权利要求1所述的方法,其中粘结体之一和与之接触的表面之间的界面的表面积小于第一半导体组件表面的表面积。
8.根据权利要求7所述的方法,其中所述界面的所述表面积小到足以使焊接点的电和热性质改变到无实质作用的程度。
9.根据权利要求1所述的方法,其中所述粘结体是由实际上非导电材料形成的。
10.根据权利要求1所述的方法,其中所述半导体器件是整流器。
11.根据权利要求1所述的方法,其中粘结体具有足以保持形成堆栈的组件的对准的粘结强度。
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US09/564,492 US6197618B1 (en) | 2000-05-04 | 2000-05-04 | Semiconductor device fabrication using adhesives |
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EP (1) | EP1152466B1 (zh) |
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US6642078B2 (en) * | 2000-08-28 | 2003-11-04 | Transpo Electronics, Inc. | Method for manufacturing diode subassemblies used in rectifier assemblies of engine driven generators |
US20030003625A1 (en) * | 2001-06-29 | 2003-01-02 | Kotzias Barbara D. | Leadframe pedestals for uniform die attach |
US7138347B2 (en) * | 2003-08-14 | 2006-11-21 | E. I. Du Pont De Nemours And Company | Thick-film conductor paste for automotive glass |
US7091621B1 (en) * | 2004-02-02 | 2006-08-15 | Advanced Micro Devices, Inc. | Crack resistant scribe line monitor structure and method for making the same |
WO2006019099A1 (ja) * | 2004-08-17 | 2006-02-23 | Mitsubishi Materials Corporation | 絶縁基板、パワーモジュール用基板並びにそれらの製造方法およびそれらを用いたパワーモジュール |
CN105321867B (zh) * | 2015-09-23 | 2017-12-29 | 桂林电子科技大学 | 一种互联载板的制作方法 |
US12009332B2 (en) * | 2016-07-28 | 2024-06-11 | Mitsubishi Electric Corporation | Semiconductor device having high yield strength intermediate plate |
US11183479B2 (en) | 2017-03-30 | 2021-11-23 | Mitsubishi Electric Corporation | Semiconductor device, method for manufacturing the same, and power conversion device |
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US3919709A (en) * | 1974-11-13 | 1975-11-11 | Gen Electric | Metallic plate-semiconductor assembly and method for the manufacture thereof |
US4358784A (en) * | 1979-11-30 | 1982-11-09 | International Rectifier Corporation | Clad molybdenum disks for alloyed diode |
US5140404A (en) * | 1990-10-24 | 1992-08-18 | Micron Technology, Inc. | Semiconductor device manufactured by a method for attaching a semiconductor die to a leadframe using a thermoplastic covered carrier tape |
US5372295A (en) * | 1991-10-04 | 1994-12-13 | Ryoden Semiconductor System Engineering Corporation | Solder material, junctioning method, junction material, and semiconductor device |
US5352629A (en) * | 1993-01-19 | 1994-10-04 | General Electric Company | Process for self-alignment and planarization of semiconductor chips attached by solder die adhesive to multi-chip modules |
US5952725A (en) * | 1996-02-20 | 1999-09-14 | Micron Technology, Inc. | Stacked semiconductor devices |
KR100186309B1 (ko) * | 1996-05-17 | 1999-03-20 | 문정환 | 적층형 버텀 리드 패키지 |
US5943557A (en) * | 1996-09-25 | 1999-08-24 | Micron Technology, Inc. | Method and structure for attaching a semiconductor die to a lead frame |
CN1180242A (zh) * | 1996-10-15 | 1998-04-29 | 三星电子株式会社 | 带有热产生装置的芯片焊接装置 |
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US6017776A (en) * | 1997-04-29 | 2000-01-25 | Micron Technology, Inc. | Method of attaching a leadframe to singulated semiconductor dice |
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DE60132044D1 (de) | 2008-02-07 |
US6197618B1 (en) | 2001-03-06 |
EP1152466A3 (en) | 2005-11-02 |
EP1152466B1 (en) | 2007-12-26 |
CN100424843C (zh) | 2008-10-08 |
CN1722391A (zh) | 2006-01-18 |
DE60132044T2 (de) | 2008-12-11 |
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