CN1197212A - 分析半导体晶锭的方法 - Google Patents

分析半导体晶锭的方法 Download PDF

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Publication number
CN1197212A
CN1197212A CN98104115A CN98104115A CN1197212A CN 1197212 A CN1197212 A CN 1197212A CN 98104115 A CN98104115 A CN 98104115A CN 98104115 A CN98104115 A CN 98104115A CN 1197212 A CN1197212 A CN 1197212A
Authority
CN
China
Prior art keywords
crystal
analyzing
wafer
crystal defect
ingot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN98104115A
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English (en)
Chinese (zh)
Inventor
朴在勤
崔秀烈
李坤燮
曺圭彻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1197212A publication Critical patent/CN1197212A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
CN98104115A 1997-04-23 1998-01-23 分析半导体晶锭的方法 Pending CN1197212A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR15212/97 1997-04-23
KR1019970015212A KR100252214B1 (ko) 1997-04-23 1997-04-23 반도체장치 제조용 베어 웨이퍼 분석방법

Publications (1)

Publication Number Publication Date
CN1197212A true CN1197212A (zh) 1998-10-28

Family

ID=19503707

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98104115A Pending CN1197212A (zh) 1997-04-23 1998-01-23 分析半导体晶锭的方法

Country Status (5)

Country Link
JP (1) JPH10297995A (ja)
KR (1) KR100252214B1 (ja)
CN (1) CN1197212A (ja)
DE (1) DE19802446A1 (ja)
GB (1) GB2324652B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60335409D1 (de) 2002-10-18 2011-01-27 Sumco Corp Verfahren zur bestimmung derpunktdefektverteilung eines siliciumeinkristallstabs
JP4792903B2 (ja) * 2005-10-04 2011-10-12 信越半導体株式会社 半導体ウエーハの製造方法及び半導体インゴットの切断位置決定システム
KR101540039B1 (ko) 2010-04-23 2015-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5729098B2 (ja) * 2011-04-07 2015-06-03 信越半導体株式会社 シリコン単結晶ウェーハの評価方法
CN102721697B (zh) * 2012-05-29 2014-04-30 江西赛维Ldk太阳能高科技有限公司 一种晶体硅位错的检测方法及检测系统
JP6402703B2 (ja) 2015-11-17 2018-10-10 信越半導体株式会社 欠陥領域の判定方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2460479A1 (fr) * 1979-06-29 1981-01-23 Ibm France Procede de caracterisation de la teneur en oxygene des barreaux de silicium tires selon la methode czochralski
US4342616A (en) * 1981-02-17 1982-08-03 International Business Machines Corporation Technique for predicting oxygen precipitation in semiconductor wafers
DE3473971D1 (en) * 1984-06-20 1988-10-13 Ibm Method of standardization and stabilization of semiconductor wafers

Also Published As

Publication number Publication date
GB2324652B (en) 2002-06-26
KR19980077887A (ko) 1998-11-16
GB2324652A (en) 1998-10-28
DE19802446A1 (de) 1998-10-29
GB9801252D0 (en) 1998-03-18
KR100252214B1 (ko) 2000-04-15
JPH10297995A (ja) 1998-11-10

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