GB9801252D0 - Method of analyzing a semiconductor ingot - Google Patents

Method of analyzing a semiconductor ingot

Info

Publication number
GB9801252D0
GB9801252D0 GBGB9801252.9A GB9801252A GB9801252D0 GB 9801252 D0 GB9801252 D0 GB 9801252D0 GB 9801252 A GB9801252 A GB 9801252A GB 9801252 D0 GB9801252 D0 GB 9801252D0
Authority
GB
United Kingdom
Prior art keywords
analyzing
semiconductor ingot
ingot
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9801252.9A
Other versions
GB2324652B (en
GB2324652A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9801252D0 publication Critical patent/GB9801252D0/en
Publication of GB2324652A publication Critical patent/GB2324652A/en
Application granted granted Critical
Publication of GB2324652B publication Critical patent/GB2324652B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
GB9801252A 1997-04-23 1998-01-22 Method of analyzing a semiconductor ingot Expired - Fee Related GB2324652B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970015212A KR100252214B1 (en) 1997-04-23 1997-04-23 Analysing method of bare wafer

Publications (3)

Publication Number Publication Date
GB9801252D0 true GB9801252D0 (en) 1998-03-18
GB2324652A GB2324652A (en) 1998-10-28
GB2324652B GB2324652B (en) 2002-06-26

Family

ID=19503707

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9801252A Expired - Fee Related GB2324652B (en) 1997-04-23 1998-01-22 Method of analyzing a semiconductor ingot

Country Status (5)

Country Link
JP (1) JPH10297995A (en)
KR (1) KR100252214B1 (en)
CN (1) CN1197212A (en)
DE (1) DE19802446A1 (en)
GB (1) GB2324652B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI231357B (en) * 2002-10-18 2005-04-21 Sumitomo Mitsubishi Silicon Method for measuring defect-distribution in silicon monocrystal ingot
JP4792903B2 (en) * 2005-10-04 2011-10-12 信越半導体株式会社 Semiconductor wafer manufacturing method and semiconductor ingot cutting position determination system
KR20180054919A (en) 2010-04-23 2018-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5729098B2 (en) * 2011-04-07 2015-06-03 信越半導体株式会社 Evaluation method of silicon single crystal wafer
CN102721697B (en) * 2012-05-29 2014-04-30 江西赛维Ldk太阳能高科技有限公司 Crystal silicon dislocation detection method and system
JP6402703B2 (en) 2015-11-17 2018-10-10 信越半導体株式会社 Defect area determination method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2460479A1 (en) * 1979-06-29 1981-01-23 Ibm France PROCESS FOR CHARACTERIZING THE OXYGEN CONTENT OF SILICON BARS DRAWN ACCORDING TO THE CZOCHRALSKI METHOD
US4342616A (en) * 1981-02-17 1982-08-03 International Business Machines Corporation Technique for predicting oxygen precipitation in semiconductor wafers
EP0165364B1 (en) * 1984-06-20 1988-09-07 International Business Machines Corporation Method of standardization and stabilization of semiconductor wafers

Also Published As

Publication number Publication date
KR19980077887A (en) 1998-11-16
DE19802446A1 (en) 1998-10-29
JPH10297995A (en) 1998-11-10
GB2324652B (en) 2002-06-26
KR100252214B1 (en) 2000-04-15
GB2324652A (en) 1998-10-28
CN1197212A (en) 1998-10-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020926