GB2324652B - Method of analyzing a semiconductor ingot - Google Patents

Method of analyzing a semiconductor ingot

Info

Publication number
GB2324652B
GB2324652B GB9801252A GB9801252A GB2324652B GB 2324652 B GB2324652 B GB 2324652B GB 9801252 A GB9801252 A GB 9801252A GB 9801252 A GB9801252 A GB 9801252A GB 2324652 B GB2324652 B GB 2324652B
Authority
GB
United Kingdom
Prior art keywords
analyzing
semiconductor ingot
ingot
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9801252A
Other languages
English (en)
Other versions
GB2324652A (en
GB9801252D0 (en
Inventor
Jae-Gun Park
Soo-Yeol Choi
Gon-Sub Lee
Kyoo-Chul Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9801252D0 publication Critical patent/GB9801252D0/en
Publication of GB2324652A publication Critical patent/GB2324652A/en
Application granted granted Critical
Publication of GB2324652B publication Critical patent/GB2324652B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
GB9801252A 1997-04-23 1998-01-22 Method of analyzing a semiconductor ingot Expired - Fee Related GB2324652B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970015212A KR100252214B1 (ko) 1997-04-23 1997-04-23 반도체장치 제조용 베어 웨이퍼 분석방법

Publications (3)

Publication Number Publication Date
GB9801252D0 GB9801252D0 (en) 1998-03-18
GB2324652A GB2324652A (en) 1998-10-28
GB2324652B true GB2324652B (en) 2002-06-26

Family

ID=19503707

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9801252A Expired - Fee Related GB2324652B (en) 1997-04-23 1998-01-22 Method of analyzing a semiconductor ingot

Country Status (5)

Country Link
JP (1) JPH10297995A (ja)
KR (1) KR100252214B1 (ja)
CN (1) CN1197212A (ja)
DE (1) DE19802446A1 (ja)
GB (1) GB2324652B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9202877B2 (en) 2010-04-23 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60335409D1 (de) 2002-10-18 2011-01-27 Sumco Corp Verfahren zur bestimmung derpunktdefektverteilung eines siliciumeinkristallstabs
JP4792903B2 (ja) * 2005-10-04 2011-10-12 信越半導体株式会社 半導体ウエーハの製造方法及び半導体インゴットの切断位置決定システム
JP5729098B2 (ja) * 2011-04-07 2015-06-03 信越半導体株式会社 シリコン単結晶ウェーハの評価方法
CN102721697B (zh) * 2012-05-29 2014-04-30 江西赛维Ldk太阳能高科技有限公司 一种晶体硅位错的检测方法及检测系统
JP6402703B2 (ja) 2015-11-17 2018-10-10 信越半導体株式会社 欠陥領域の判定方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4344815A (en) * 1979-06-29 1982-08-17 International Business Machines Corporation Method for characterizing the oxygen contents of Czochralski grown silicon rods
EP0058337A2 (en) * 1981-02-17 1982-08-25 International Business Machines Corporation Process for predicting oxygen precipitation in semiconductor wafers
US4637123A (en) * 1984-06-20 1987-01-20 International Business Machines Corporation Method of standardizing and stabilizing semiconductor wafers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4344815A (en) * 1979-06-29 1982-08-17 International Business Machines Corporation Method for characterizing the oxygen contents of Czochralski grown silicon rods
EP0058337A2 (en) * 1981-02-17 1982-08-25 International Business Machines Corporation Process for predicting oxygen precipitation in semiconductor wafers
US4637123A (en) * 1984-06-20 1987-01-20 International Business Machines Corporation Method of standardizing and stabilizing semiconductor wafers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9202877B2 (en) 2010-04-23 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9812533B2 (en) 2010-04-23 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
DE19802446A1 (de) 1998-10-29
CN1197212A (zh) 1998-10-28
KR19980077887A (ko) 1998-11-16
GB2324652A (en) 1998-10-28
JPH10297995A (ja) 1998-11-10
KR100252214B1 (ko) 2000-04-15
GB9801252D0 (en) 1998-03-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020926