CN118696617A - 半导体装置、存储装置及电子设备 - Google Patents

半导体装置、存储装置及电子设备 Download PDF

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Publication number
CN118696617A
CN118696617A CN202380021311.3A CN202380021311A CN118696617A CN 118696617 A CN118696617 A CN 118696617A CN 202380021311 A CN202380021311 A CN 202380021311A CN 118696617 A CN118696617 A CN 118696617A
Authority
CN
China
Prior art keywords
insulator
conductor
oxide
layer
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380021311.3A
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English (en)
Chinese (zh)
Inventor
木村肇
山崎舜平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN118696617A publication Critical patent/CN118696617A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs

Landscapes

  • Thin Film Transistor (AREA)
CN202380021311.3A 2022-02-25 2023-02-10 半导体装置、存储装置及电子设备 Pending CN118696617A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-028096 2022-02-25
JP2022028096 2022-02-25
PCT/IB2023/051188 WO2023161754A1 (ja) 2022-02-25 2023-02-10 半導体装置、記憶装置、及び電子機器

Publications (1)

Publication Number Publication Date
CN118696617A true CN118696617A (zh) 2024-09-24

Family

ID=87764914

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380021311.3A Pending CN118696617A (zh) 2022-02-25 2023-02-10 半导体装置、存储装置及电子设备

Country Status (5)

Country Link
US (1) US20250159869A1 (https=)
JP (1) JPWO2023161754A1 (https=)
KR (1) KR20240155858A (https=)
CN (1) CN118696617A (https=)
WO (1) WO2023161754A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101698193B1 (ko) 2009-09-15 2017-01-19 삼성전자주식회사 3차원 반도체 메모리 장치 및 그 제조 방법
US9177872B2 (en) 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
US9634097B2 (en) 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
TW201901971A (zh) * 2017-05-12 2019-01-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
WO2019021098A1 (en) * 2017-07-26 2019-01-31 Semiconductor Energy Laboratory Co., Ltd. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
US12289878B2 (en) * 2019-07-12 2025-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
KR20240155858A (ko) 2024-10-29
JPWO2023161754A1 (https=) 2023-08-31
US20250159869A1 (en) 2025-05-15
WO2023161754A1 (ja) 2023-08-31

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