CN118575285A - 光电转换元件及摄像装置 - Google Patents

光电转换元件及摄像装置 Download PDF

Info

Publication number
CN118575285A
CN118575285A CN202380017964.4A CN202380017964A CN118575285A CN 118575285 A CN118575285 A CN 118575285A CN 202380017964 A CN202380017964 A CN 202380017964A CN 118575285 A CN118575285 A CN 118575285A
Authority
CN
China
Prior art keywords
quantum dot
electrode
photoelectric conversion
layers
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380017964.4A
Other languages
English (en)
Chinese (zh)
Inventor
町田真一
宍戸三四郎
松川望
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN118575285A publication Critical patent/CN118575285A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
CN202380017964.4A 2022-02-16 2023-01-17 光电转换元件及摄像装置 Pending CN118575285A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022022315 2022-02-16
JP2022-022315 2022-02-16
PCT/JP2023/001179 WO2023157531A1 (ja) 2022-02-16 2023-01-17 光電変換素子および撮像装置

Publications (1)

Publication Number Publication Date
CN118575285A true CN118575285A (zh) 2024-08-30

Family

ID=87578264

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380017964.4A Pending CN118575285A (zh) 2022-02-16 2023-01-17 光电转换元件及摄像装置

Country Status (5)

Country Link
US (1) US20240381677A1 (https=)
EP (1) EP4481835A4 (https=)
JP (1) JPWO2023157531A1 (https=)
CN (1) CN118575285A (https=)
WO (1) WO2023157531A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022249844A1 (ja) * 2021-05-24 2022-12-01 パナソニックＩｐマネジメント株式会社 光電変換素子、撮像装置および光電変換素子の駆動方法
WO2025120799A1 (ja) * 2023-12-07 2025-06-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2948486A1 (en) * 2014-05-09 2015-11-12 Massachusetts Institute Of Technology Energy level modification of nanocrystals through ligand exchange
US20150357534A1 (en) * 2014-06-09 2015-12-10 The Board Of Trustees Of The Leland Stanford Junior University Atomic Layer Deposition (ALD) of TiO2 using (Tetrakis(dimethylamino)titanium) TDMAT as an Encapsulation and/or Barrier Layer for ALD PbS
US9941433B2 (en) * 2014-12-11 2018-04-10 Vadient Optics, Llc Composite quantum-dot materials for photonic detectors
US9786715B2 (en) * 2015-07-23 2017-10-10 Artilux Corporation High efficiency wide spectrum sensor
JP6298223B2 (ja) * 2015-08-28 2018-03-20 京セラ株式会社 光電変換装置
US10897023B2 (en) * 2015-10-02 2021-01-19 Toyota Motor Europe All quantum dot based optoelectronic device
CN111477644B (zh) * 2020-03-31 2023-04-18 东南大学 一种近红外/可见光/紫外集成光谱成像器件及成像方法

Also Published As

Publication number Publication date
EP4481835A1 (en) 2024-12-25
US20240381677A1 (en) 2024-11-14
EP4481835A4 (en) 2025-05-14
JPWO2023157531A1 (https=) 2023-08-24
WO2023157531A1 (ja) 2023-08-24

Similar Documents

Publication Publication Date Title
Lee et al. Thin-film image sensors with a pinned photodiode structure
US8742398B2 (en) Quantum dot-fullerene junction based photodetectors
JP7199039B2 (ja) 撮像装置
US9349970B2 (en) Quantum dot-fullerene junction based photodetectors
EP4343858A1 (en) Photoelectric conversion element and imaging device
US20240381677A1 (en) Photoelectric conversion element and imaging apparatus
JPWO2020170703A1 (ja) 撮像装置およびその駆動方法
US12101949B2 (en) Photoelectric conversion element, electronic device, and light-emitting device
US20220238576A1 (en) Imaging device
CN116472717A (zh) 摄像装置及驱动方法
US11777050B2 (en) Optical sensor
JP2021118254A (ja) 撮像装置
JP4832283B2 (ja) 光電変換素子の製造方法、光電変換素子、固体撮像素子
CN112673483A (zh) 摄像装置
WO2020080072A1 (ja) 光電変換素子およびイメージセンサ
US20240065013A1 (en) Photoelectric conversion element, imaging apparatus, and method for driving photoelectric conversion element
US12082427B2 (en) Imaging device, method for manufacturing imaging device, and imaging apparatus
CN121398179A (zh) 一种感光像素单元以及图像传感器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination