JPWO2023157531A1 - - Google Patents

Info

Publication number
JPWO2023157531A1
JPWO2023157531A1 JP2024501027A JP2024501027A JPWO2023157531A1 JP WO2023157531 A1 JPWO2023157531 A1 JP WO2023157531A1 JP 2024501027 A JP2024501027 A JP 2024501027A JP 2024501027 A JP2024501027 A JP 2024501027A JP WO2023157531 A1 JPWO2023157531 A1 JP WO2023157531A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024501027A
Other languages
Japanese (ja)
Other versions
JPWO2023157531A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023157531A1 publication Critical patent/JPWO2023157531A1/ja
Publication of JPWO2023157531A5 publication Critical patent/JPWO2023157531A5/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30Devices controlled by radiation
    • H10K39/32Organic image sensors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
JP2024501027A 2022-02-16 2023-01-17 Pending JPWO2023157531A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022022315 2022-02-16
PCT/JP2023/001179 WO2023157531A1 (ja) 2022-02-16 2023-01-17 光電変換素子および撮像装置

Publications (2)

Publication Number Publication Date
JPWO2023157531A1 true JPWO2023157531A1 (https=) 2023-08-24
JPWO2023157531A5 JPWO2023157531A5 (https=) 2024-11-13

Family

ID=87578264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024501027A Pending JPWO2023157531A1 (https=) 2022-02-16 2023-01-17

Country Status (5)

Country Link
US (1) US20240381677A1 (https=)
EP (1) EP4481835A4 (https=)
JP (1) JPWO2023157531A1 (https=)
CN (1) CN118575285A (https=)
WO (1) WO2023157531A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022249844A1 (ja) * 2021-05-24 2022-12-01 パナソニックIpマネジメント株式会社 光電変換素子、撮像装置および光電変換素子の駆動方法
WO2025120799A1 (ja) * 2023-12-07 2025-06-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2948486A1 (en) * 2014-05-09 2015-11-12 Massachusetts Institute Of Technology Energy level modification of nanocrystals through ligand exchange
US20150357534A1 (en) * 2014-06-09 2015-12-10 The Board Of Trustees Of The Leland Stanford Junior University Atomic Layer Deposition (ALD) of TiO2 using (Tetrakis(dimethylamino)titanium) TDMAT as an Encapsulation and/or Barrier Layer for ALD PbS
US9941433B2 (en) * 2014-12-11 2018-04-10 Vadient Optics, Llc Composite quantum-dot materials for photonic detectors
US9786715B2 (en) * 2015-07-23 2017-10-10 Artilux Corporation High efficiency wide spectrum sensor
JP6298223B2 (ja) * 2015-08-28 2018-03-20 京セラ株式会社 光電変換装置
US10897023B2 (en) * 2015-10-02 2021-01-19 Toyota Motor Europe All quantum dot based optoelectronic device
CN111477644B (zh) * 2020-03-31 2023-04-18 东南大学 一种近红外/可见光/紫外集成光谱成像器件及成像方法

Also Published As

Publication number Publication date
EP4481835A1 (en) 2024-12-25
US20240381677A1 (en) 2024-11-14
EP4481835A4 (en) 2025-05-14
WO2023157531A1 (ja) 2023-08-24
CN118575285A (zh) 2024-08-30

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Legal Events

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Effective date: 20240729

A621 Written request for application examination

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Effective date: 20251107