CN118435328A - 蚀刻方法和等离子体处理装置 - Google Patents

蚀刻方法和等离子体处理装置 Download PDF

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Publication number
CN118435328A
CN118435328A CN202280084991.9A CN202280084991A CN118435328A CN 118435328 A CN118435328 A CN 118435328A CN 202280084991 A CN202280084991 A CN 202280084991A CN 118435328 A CN118435328 A CN 118435328A
Authority
CN
China
Prior art keywords
gas
tungsten
etching method
plasma
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280084991.9A
Other languages
English (en)
Chinese (zh)
Inventor
向山广记
户村幕树
木原嘉英
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN118435328A publication Critical patent/CN118435328A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN202280084991.9A 2021-12-28 2022-12-26 蚀刻方法和等离子体处理装置 Pending CN118435328A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021213692 2021-12-28
JP2021-213692 2021-12-28
PCT/JP2022/047980 WO2023127820A1 (ja) 2021-12-28 2022-12-26 エッチング方法及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
CN118435328A true CN118435328A (zh) 2024-08-02

Family

ID=86999009

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280084991.9A Pending CN118435328A (zh) 2021-12-28 2022-12-26 蚀刻方法和等离子体处理装置

Country Status (6)

Country Link
US (1) US20240355589A1 (https=)
JP (1) JPWO2023127820A1 (https=)
KR (1) KR20240121327A (https=)
CN (1) CN118435328A (https=)
TW (1) TW202333226A (https=)
WO (1) WO2023127820A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7852163B2 (ja) * 2023-07-18 2026-04-27 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2026038483A1 (ja) * 2024-08-15 2026-02-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142411A (ja) * 1993-03-25 1995-06-02 Nippon Steel Corp 半導体装置における金属薄膜形成方法
JPH07176484A (ja) * 1993-06-28 1995-07-14 Applied Materials Inc 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法
US8394722B2 (en) 2008-11-03 2013-03-12 Lam Research Corporation Bi-layer, tri-layer mask CD control
JP7022651B2 (ja) * 2018-05-28 2022-02-18 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
WO2020096817A1 (en) * 2018-11-05 2020-05-14 Lam Research Corporation Directional deposition in etch chamber
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置

Also Published As

Publication number Publication date
JPWO2023127820A1 (https=) 2023-07-06
US20240355589A1 (en) 2024-10-24
TW202333226A (zh) 2023-08-16
KR20240121327A (ko) 2024-08-08
WO2023127820A1 (ja) 2023-07-06

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