TW202333226A - 蝕刻方法及電漿處理裝置 - Google Patents
蝕刻方法及電漿處理裝置 Download PDFInfo
- Publication number
- TW202333226A TW202333226A TW111150363A TW111150363A TW202333226A TW 202333226 A TW202333226 A TW 202333226A TW 111150363 A TW111150363 A TW 111150363A TW 111150363 A TW111150363 A TW 111150363A TW 202333226 A TW202333226 A TW 202333226A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- tungsten
- etching method
- plasma
- mask
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021213692 | 2021-12-28 | ||
| JP2021-213692 | 2021-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202333226A true TW202333226A (zh) | 2023-08-16 |
Family
ID=86999009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111150363A TW202333226A (zh) | 2021-12-28 | 2022-12-28 | 蝕刻方法及電漿處理裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240355589A1 (https=) |
| JP (1) | JPWO2023127820A1 (https=) |
| KR (1) | KR20240121327A (https=) |
| CN (1) | CN118435328A (https=) |
| TW (1) | TW202333226A (https=) |
| WO (1) | WO2023127820A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7852163B2 (ja) * | 2023-07-18 | 2026-04-27 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| WO2026038483A1 (ja) * | 2024-08-15 | 2026-02-19 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142411A (ja) * | 1993-03-25 | 1995-06-02 | Nippon Steel Corp | 半導体装置における金属薄膜形成方法 |
| JPH07176484A (ja) * | 1993-06-28 | 1995-07-14 | Applied Materials Inc | 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法 |
| US8394722B2 (en) | 2008-11-03 | 2013-03-12 | Lam Research Corporation | Bi-layer, tri-layer mask CD control |
| JP7022651B2 (ja) * | 2018-05-28 | 2022-02-18 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
| WO2020096817A1 (en) * | 2018-11-05 | 2020-05-14 | Lam Research Corporation | Directional deposition in etch chamber |
| JP7336365B2 (ja) * | 2019-11-19 | 2023-08-31 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
-
2022
- 2022-12-26 KR KR1020247024131A patent/KR20240121327A/ko active Pending
- 2022-12-26 WO PCT/JP2022/047980 patent/WO2023127820A1/ja not_active Ceased
- 2022-12-26 CN CN202280084991.9A patent/CN118435328A/zh active Pending
- 2022-12-26 JP JP2023571025A patent/JPWO2023127820A1/ja active Pending
- 2022-12-28 TW TW111150363A patent/TW202333226A/zh unknown
-
2024
- 2024-06-28 US US18/757,575 patent/US20240355589A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023127820A1 (https=) | 2023-07-06 |
| US20240355589A1 (en) | 2024-10-24 |
| CN118435328A (zh) | 2024-08-02 |
| KR20240121327A (ko) | 2024-08-08 |
| WO2023127820A1 (ja) | 2023-07-06 |
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