JPWO2023127820A1 - - Google Patents
Info
- Publication number
- JPWO2023127820A1 JPWO2023127820A1 JP2023571025A JP2023571025A JPWO2023127820A1 JP WO2023127820 A1 JPWO2023127820 A1 JP WO2023127820A1 JP 2023571025 A JP2023571025 A JP 2023571025A JP 2023571025 A JP2023571025 A JP 2023571025A JP WO2023127820 A1 JPWO2023127820 A1 JP WO2023127820A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021213692 | 2021-12-28 | ||
| PCT/JP2022/047980 WO2023127820A1 (ja) | 2021-12-28 | 2022-12-26 | エッチング方法及びプラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023127820A1 true JPWO2023127820A1 (https=) | 2023-07-06 |
Family
ID=86999009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023571025A Pending JPWO2023127820A1 (https=) | 2021-12-28 | 2022-12-26 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240355589A1 (https=) |
| JP (1) | JPWO2023127820A1 (https=) |
| KR (1) | KR20240121327A (https=) |
| CN (1) | CN118435328A (https=) |
| TW (1) | TW202333226A (https=) |
| WO (1) | WO2023127820A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7852163B2 (ja) * | 2023-07-18 | 2026-04-27 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| WO2026038483A1 (ja) * | 2024-08-15 | 2026-02-19 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142411A (ja) * | 1993-03-25 | 1995-06-02 | Nippon Steel Corp | 半導体装置における金属薄膜形成方法 |
| JPH07176484A (ja) * | 1993-06-28 | 1995-07-14 | Applied Materials Inc | 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法 |
| US8394722B2 (en) | 2008-11-03 | 2013-03-12 | Lam Research Corporation | Bi-layer, tri-layer mask CD control |
| JP7022651B2 (ja) * | 2018-05-28 | 2022-02-18 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
| WO2020096817A1 (en) * | 2018-11-05 | 2020-05-14 | Lam Research Corporation | Directional deposition in etch chamber |
| JP7336365B2 (ja) * | 2019-11-19 | 2023-08-31 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
-
2022
- 2022-12-26 KR KR1020247024131A patent/KR20240121327A/ko active Pending
- 2022-12-26 WO PCT/JP2022/047980 patent/WO2023127820A1/ja not_active Ceased
- 2022-12-26 CN CN202280084991.9A patent/CN118435328A/zh active Pending
- 2022-12-26 JP JP2023571025A patent/JPWO2023127820A1/ja active Pending
- 2022-12-28 TW TW111150363A patent/TW202333226A/zh unknown
-
2024
- 2024-06-28 US US18/757,575 patent/US20240355589A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20240355589A1 (en) | 2024-10-24 |
| TW202333226A (zh) | 2023-08-16 |
| CN118435328A (zh) | 2024-08-02 |
| KR20240121327A (ko) | 2024-08-08 |
| WO2023127820A1 (ja) | 2023-07-06 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250926 |