KR20240121327A - 에칭 방법 및 플라즈마 처리 장치 - Google Patents
에칭 방법 및 플라즈마 처리 장치 Download PDFInfo
- Publication number
- KR20240121327A KR20240121327A KR1020247024131A KR20247024131A KR20240121327A KR 20240121327 A KR20240121327 A KR 20240121327A KR 1020247024131 A KR1020247024131 A KR 1020247024131A KR 20247024131 A KR20247024131 A KR 20247024131A KR 20240121327 A KR20240121327 A KR 20240121327A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- etching method
- tungsten
- plasma
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H01L21/0337—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
-
- H01L21/0332—
-
- H01L21/31144—
-
- H01L21/32139—
-
- H01L21/67069—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2021-213692 | 2021-12-28 | ||
| JP2021213692 | 2021-12-28 | ||
| PCT/JP2022/047980 WO2023127820A1 (ja) | 2021-12-28 | 2022-12-26 | エッチング方法及びプラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240121327A true KR20240121327A (ko) | 2024-08-08 |
Family
ID=86999009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247024131A Pending KR20240121327A (ko) | 2021-12-28 | 2022-12-26 | 에칭 방법 및 플라즈마 처리 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240355589A1 (https=) |
| JP (1) | JPWO2023127820A1 (https=) |
| KR (1) | KR20240121327A (https=) |
| CN (1) | CN118435328A (https=) |
| TW (1) | TW202333226A (https=) |
| WO (1) | WO2023127820A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7852163B2 (ja) * | 2023-07-18 | 2026-04-27 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| WO2026038483A1 (ja) * | 2024-08-15 | 2026-02-19 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010109373A (ja) | 2008-11-03 | 2010-05-13 | Lam Res Corp | 二重層マスク、三重層マスクのcd制御 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142411A (ja) * | 1993-03-25 | 1995-06-02 | Nippon Steel Corp | 半導体装置における金属薄膜形成方法 |
| JPH07176484A (ja) * | 1993-06-28 | 1995-07-14 | Applied Materials Inc | 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法 |
| JP7022651B2 (ja) * | 2018-05-28 | 2022-02-18 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
| WO2020096817A1 (en) * | 2018-11-05 | 2020-05-14 | Lam Research Corporation | Directional deposition in etch chamber |
| JP7336365B2 (ja) * | 2019-11-19 | 2023-08-31 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
-
2022
- 2022-12-26 KR KR1020247024131A patent/KR20240121327A/ko active Pending
- 2022-12-26 WO PCT/JP2022/047980 patent/WO2023127820A1/ja not_active Ceased
- 2022-12-26 CN CN202280084991.9A patent/CN118435328A/zh active Pending
- 2022-12-26 JP JP2023571025A patent/JPWO2023127820A1/ja active Pending
- 2022-12-28 TW TW111150363A patent/TW202333226A/zh unknown
-
2024
- 2024-06-28 US US18/757,575 patent/US20240355589A1/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010109373A (ja) | 2008-11-03 | 2010-05-13 | Lam Res Corp | 二重層マスク、三重層マスクのcd制御 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023127820A1 (https=) | 2023-07-06 |
| US20240355589A1 (en) | 2024-10-24 |
| TW202333226A (zh) | 2023-08-16 |
| CN118435328A (zh) | 2024-08-02 |
| WO2023127820A1 (ja) | 2023-07-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| D13 | Search requested |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D13-SRH-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |