CN1183548C - 多值的磁阻写/读存储器以及该存储器的读写方法 - Google Patents

多值的磁阻写/读存储器以及该存储器的读写方法 Download PDF

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Publication number
CN1183548C
CN1183548C CNB008134669A CN00813466A CN1183548C CN 1183548 C CN1183548 C CN 1183548C CN B008134669 A CNB008134669 A CN B008134669A CN 00813466 A CN00813466 A CN 00813466A CN 1183548 C CN1183548 C CN 1183548C
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CN
China
Prior art keywords
magnetic layers
magnetic
memory
layers
layer
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Expired - Fee Related
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CNB008134669A
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English (en)
Chinese (zh)
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CN1376299A (zh
Inventor
R·特维斯
W·韦伯
S·施瓦兹
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Infineon Technologies AG
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Infineon Technologies AG
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Publication of CN1376299A publication Critical patent/CN1376299A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5615—Multilevel magnetic memory cell using non-magnetic non-conducting interlayer, e.g. MTJ

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CNB008134669A 1999-09-28 2000-09-21 多值的磁阻写/读存储器以及该存储器的读写方法 Expired - Fee Related CN1183548C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19946490A DE19946490A1 (de) 1999-09-28 1999-09-28 Magnetoresistiver Schreib/Lese-Speicher sowie Verfahren zum Beschreiben und Auslesen eines solchen Speichers
DE19946490.1 1999-09-28

Publications (2)

Publication Number Publication Date
CN1376299A CN1376299A (zh) 2002-10-23
CN1183548C true CN1183548C (zh) 2005-01-05

Family

ID=7923600

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008134669A Expired - Fee Related CN1183548C (zh) 1999-09-28 2000-09-21 多值的磁阻写/读存储器以及该存储器的读写方法

Country Status (8)

Country Link
US (1) US6717843B1 (enExample)
EP (1) EP1222662B1 (enExample)
JP (1) JP4338926B2 (enExample)
KR (1) KR100538972B1 (enExample)
CN (1) CN1183548C (enExample)
DE (2) DE19946490A1 (enExample)
TW (1) TW480489B (enExample)
WO (1) WO2001024190A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334971A (ja) * 2001-05-09 2002-11-22 Nec Corp 磁性メモリ及びその動作方法
US6795336B2 (en) * 2001-12-07 2004-09-21 Hynix Semiconductor Inc. Magnetic random access memory
TWI222763B (en) * 2002-03-29 2004-10-21 Toshiba Corp Magnetic logic element and magnetic logic element array
US7502248B2 (en) * 2004-05-21 2009-03-10 Samsung Electronics Co., Ltd. Multi-bit magnetic random access memory device
EP1890296B1 (en) * 2004-05-21 2010-11-17 Samsung Electronics Co., Ltd. Multi-bit magnetic random access memory device and methods of operating and sensing the same
JP4599259B2 (ja) 2005-09-20 2010-12-15 株式会社東芝 磁気素子及びこれを用いた磁気信号処理装置
TWI449040B (zh) * 2006-10-06 2014-08-11 Crocus Technology Sa 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法
US7388776B1 (en) * 2006-12-22 2008-06-17 Hitachi Global Storage Technologies Netherlands, B.V. Three-dimensional magnetic memory
JP2009080904A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 磁気記録装置
KR100982455B1 (ko) 2008-04-30 2010-09-16 노던 라이트 세미컨덕터 코포레이션 전기 에너지 저장 장치
CN101635841B (zh) * 2009-09-04 2012-02-08 杭州华三通信技术有限公司 视频业务信息读写性能的调整方法和设备
TWI393894B (zh) * 2009-11-20 2013-04-21 Inst Information Industry 識別迴路上電器用電行為的方法、系統與電腦程式產品
KR101598833B1 (ko) * 2009-12-21 2016-03-03 삼성전자주식회사 자기 메모리 소자 및 그 동작방법
KR20130015927A (ko) * 2011-08-05 2013-02-14 에스케이하이닉스 주식회사 멀티 레벨을 갖는 자기 저항 메모리 장치 및 그 구동방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5585986A (en) 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
US5734605A (en) * 1996-09-10 1998-03-31 Motorola, Inc. Multi-layer magnetic tunneling junction memory cells
US5768181A (en) * 1997-04-07 1998-06-16 Motorola, Inc. Magnetic device having multi-layer with insulating and conductive layers
US5864498A (en) 1997-10-01 1999-01-26 High Density Circuits Ferromagnetic memory using soft magnetic material and hard magnetic material
US5930164A (en) * 1998-02-26 1999-07-27 Motorola, Inc. Magnetic memory unit having four states and operating method thereof
US5953248A (en) * 1998-07-20 1999-09-14 Motorola, Inc. Low switching field magnetic tunneling junction for high density arrays

Also Published As

Publication number Publication date
EP1222662A1 (de) 2002-07-17
KR20030009301A (ko) 2003-01-29
WO2001024190A1 (de) 2001-04-05
EP1222662B1 (de) 2003-05-28
US6717843B1 (en) 2004-04-06
JP4338926B2 (ja) 2009-10-07
DE50002394D1 (de) 2003-07-03
CN1376299A (zh) 2002-10-23
TW480489B (en) 2002-03-21
JP2003510755A (ja) 2003-03-18
DE19946490A1 (de) 2001-04-19
KR100538972B1 (ko) 2005-12-26

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