CN118043427A - 研磨用组合物 - Google Patents

研磨用组合物 Download PDF

Info

Publication number
CN118043427A
CN118043427A CN202280065940.1A CN202280065940A CN118043427A CN 118043427 A CN118043427 A CN 118043427A CN 202280065940 A CN202280065940 A CN 202280065940A CN 118043427 A CN118043427 A CN 118043427A
Authority
CN
China
Prior art keywords
polishing
less
polishing composition
abrasive grains
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280065940.1A
Other languages
English (en)
Chinese (zh)
Inventor
森嘉男
中贝雄一郎
织田博之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of CN118043427A publication Critical patent/CN118043427A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/02—Planarisation of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
CN202280065940.1A 2021-09-30 2022-09-27 研磨用组合物 Pending CN118043427A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-162177 2021-09-30
JP2021162177 2021-09-30
PCT/JP2022/035995 WO2023054386A1 (ja) 2021-09-30 2022-09-27 研磨用組成物

Publications (1)

Publication Number Publication Date
CN118043427A true CN118043427A (zh) 2024-05-14

Family

ID=85782754

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280065940.1A Pending CN118043427A (zh) 2021-09-30 2022-09-27 研磨用组合物

Country Status (7)

Country Link
US (1) US20240400862A1 (https=)
EP (1) EP4410923A4 (https=)
JP (1) JPWO2023054386A1 (https=)
KR (1) KR20240072217A (https=)
CN (1) CN118043427A (https=)
TW (1) TW202330822A (https=)
WO (1) WO2023054386A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025205563A1 (ja) * 2024-03-28 2025-10-02 株式会社フジミインコーポレーテッド 研磨用組成物

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013054883A1 (ja) * 2011-10-13 2013-04-18 三井金属鉱業株式会社 研摩材スラリー及び研摩方法
JP6448314B2 (ja) * 2014-11-06 2019-01-09 株式会社ディスコ 研磨液及びＳｉＣ基板の研磨方法
JP6611485B2 (ja) 2014-11-07 2019-11-27 株式会社フジミインコーポレーテッド 研磨方法およびポリシング用組成物
CN110299403B (zh) * 2014-11-27 2022-03-25 住友电气工业株式会社 碳化硅基板
WO2017212971A1 (ja) * 2016-06-08 2017-12-14 三井金属鉱業株式会社 研摩液及び研摩物の製造方法
EP3604475B1 (en) * 2017-03-23 2025-06-04 Fujimi Incorporated Polishing composition
KR102337333B1 (ko) * 2017-05-25 2021-12-13 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 세라믹 재료의 화학기계적 연마를 위한 산화 유체
US11339311B2 (en) * 2018-01-11 2022-05-24 Fujimi Incorporated Polishing composition
TWI861353B (zh) * 2020-01-31 2024-11-11 美商恩特葛瑞斯股份有限公司 用於研磨硬質材料之化學機械研磨(cmp)組合物
JP7405672B2 (ja) 2020-03-30 2023-12-26 イビデン株式会社 燃焼装置用消音器
CN115380097B (zh) * 2020-03-30 2024-06-14 福吉米株式会社 研磨用组合物
WO2022168858A1 (ja) * 2021-02-04 2022-08-11 株式会社フジミインコーポレーテッド 研磨用組成物
EP4314179A4 (en) * 2021-03-29 2025-06-18 Entegris, Inc. Suspension for chemical mechanical planarization (cmp) and method employing the same
CN114410226A (zh) * 2022-01-27 2022-04-29 中国科学院上海微系统与信息技术研究所 一种抛光液及其制备方法和应用

Also Published As

Publication number Publication date
KR20240072217A (ko) 2024-05-23
WO2023054386A1 (ja) 2023-04-06
EP4410923A4 (en) 2025-10-01
JPWO2023054386A1 (https=) 2023-04-06
TW202330822A (zh) 2023-08-01
EP4410923A1 (en) 2024-08-07
US20240400862A1 (en) 2024-12-05

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