CN118039757A - Semiconductor ultraviolet light-emitting diode - Google Patents
Semiconductor ultraviolet light-emitting diode Download PDFInfo
- Publication number
- CN118039757A CN118039757A CN202410217528.8A CN202410217528A CN118039757A CN 118039757 A CN118039757 A CN 118039757A CN 202410217528 A CN202410217528 A CN 202410217528A CN 118039757 A CN118039757 A CN 118039757A
- Authority
- CN
- China
- Prior art keywords
- quantum well
- peak position
- distribution
- equal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 230000010287 polarization Effects 0.000 claims abstract description 46
- 230000002269 spontaneous effect Effects 0.000 claims abstract description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 6
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910010092 LiAlO2 Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910007948 ZrB2 Inorganic materials 0.000 claims description 3
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000006798 recombination Effects 0.000 abstract description 8
- 238000005215 recombination Methods 0.000 abstract description 8
- 230000005699 Stark effect Effects 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000000670 limiting effect Effects 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 239000011777 magnesium Substances 0.000 description 19
- 230000000694 effects Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- -1 magnesium aluminate Chemical class 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001126 phototherapy Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
The invention provides a semiconductor ultraviolet light emitting diode, which comprises a substrate, an n-type semiconductor, a quantum well and a p-type semiconductor, wherein the substrate, the n-type semiconductor, the quantum well and the p-type semiconductor are sequentially arranged from bottom to top, and the quantum well has piezoelectric polarization coefficient distribution and spontaneous polarization coefficient distribution characteristics. According to the invention, through designing the distribution of piezoelectric polarization coefficient and spontaneous polarization coefficient in the quantum well in the semiconductor ultraviolet light emitting diode, the piezoelectric polarization and spontaneous polarization of the quantum well are regulated and controlled, the quantum limiting stark effect of the quantum well is reduced, the energy band inclination and electron overflow of the quantum well are reduced, the radiation recombination efficiency of the quantum well is improved, the photoelectric conversion efficiency of the ultraviolet light emitting diode is improved, and the efficiency attenuation of the ultraviolet light emitting diode under the condition of high current is improved from below 50% -70% to 20% -50%.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor ultraviolet light-emitting diode.
Background
The semiconductor element, especially the semiconductor light-emitting element, has a wide wavelength range with adjustable range, high luminous efficiency, energy saving, environmental protection, long service life exceeding 10 ten thousand hours, small size, multiple application scenes, strong designability and other factors, blue light (with the luminous wavelength of 440-460 nm) and green light (with the luminous wavelength of 520-540 nm) are matched with fluorescent powder to gradually replace incandescent lamps and fluorescent lamps, a light source for common household illumination is grown, and new scenes such as an indoor high-resolution display screen, an outdoor display screen, mini-LEDs, micro-LEDs, mobile TV backlights, backlight illumination, street lamps, automobile headlamps, daytime running lamps, in-car atmosphere lamps, flashlights and other application fields are widely used.
The UVA band of the ultraviolet light-emitting diode (with the light-emitting wavelength of 350-420 nm) can be applied to the application fields of 3D curing, nail beautifying curing, phototherapy, skin treatment, plant illumination and the like. The semiconductor ultraviolet light-emitting diode grows by using a sapphire substrate, and has large lattice mismatch and thermal mismatch, so that higher defect density and polarization effect are caused, and the light-emitting efficiency of the semiconductor light-emitting element is reduced; meanwhile, the nitride semiconductor structure has non-central symmetry, stronger spontaneous polarization can be generated along the direction of the c axis, and piezoelectric polarization effects of lattice mismatch are overlapped to form an intrinsic polarization field; the intrinsic polarization field is along the (001) direction, so that the multiple quantum well layer generates stronger quantum confinement Stark effect, the energy band inclination and the electron hole wave function spatial separation are caused, and the radiation recombination efficiency of electron holes is reduced; the hole ionization efficiency of the semiconductor ultraviolet light emitting diode is far lower than the electron ionization efficiency, so that the hole concentration is more than 2 orders of magnitude lower than the electron concentration, excessive electrons can overflow from the multiple quantum wells to the second conductive type semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, holes of the second conductive type semiconductor are difficult to effectively inject into the multiple quantum wells, the hole injection efficiency is low, and the light emitting efficiency of the multiple quantum wells is low. Unlike traditional semiconductor blue light emitting diode, semiconductor ultraviolet light emitting diode has short wavelength and low In content of quantum well, and can not form quantum limiting effect of In component fluctuation In quantum well region, resulting In weak electron hole local effect of quantum well, further aggravating electron hole mismatch.
Disclosure of Invention
In order to solve one of the technical problems, the invention provides a semiconductor ultraviolet light emitting diode.
The embodiment of the invention provides a semiconductor ultraviolet light emitting diode, which comprises a substrate, an n-type semiconductor, a quantum well and a p-type semiconductor, wherein the substrate, the n-type semiconductor, the quantum well and the p-type semiconductor are sequentially arranged from bottom to top, and the quantum well has piezoelectric polarization coefficient distribution and spontaneous polarization coefficient distribution characteristics.
Preferably, the piezoelectric polarization coefficient of the quantum well has a curved distribution of sinusoidal function y=asin (bx+c) +d.
Preferably, the spontaneous polarization coefficient of the quantum well has a curved distribution of cosine function y= Ecosn (fx+g) +h.
Preferably, the quantum well also has In element distribution, al element distribution and In/Al element proportion distribution;
the descending angle of the peak position of the In element of the quantum well towards the substrate direction is alpha;
The descending angle of the peak position of the In element of the quantum well to the p-type semiconductor direction is beta;
The descending angle of the peak position of the Al element of the quantum well towards the substrate direction is delta;
The descending angle of the peak position of the Al element of the quantum well to the p-type semiconductor direction is sigma;
the descending angle of the peak position of the In/Al element proportion of the quantum well to the substrate direction is gamma;
the descending angle of the peak position of the In/Al element proportion of the quantum well to the p-type semiconductor direction is theta;
Wherein: delta is more than or equal to 10 degrees and sigma is more than or equal to 10 degrees and theta is more than or equal to alpha and beta is more than or equal to 90 degrees.
Preferably, the quantum well is further provided with In/C element proportion distribution, in/O element proportion distribution, in/H element proportion distribution, al/C element proportion distribution, al/O element proportion distribution and Al/H element proportion distribution;
The decreasing angle of the peak position of the In/C element proportion of the quantum well to the substrate direction is
The descending angle of the peak position of the In/O element proportion of the quantum well to the substrate direction is psi;
the descending angle of the peak position of the In/H element proportion of the quantum well to the substrate direction is mu;
the descending angle of the peak position of the Al/C element proportion of the quantum well towards the substrate direction is upsilon;
the descending angle of the peak position of the Al/O element proportion of the quantum well to the substrate direction is rho;
the descending angle of the peak position of the Al/H element proportion of the quantum well to the substrate direction is omega;
wherein:
Preferably, the quantum well also has In/Mg element proportion distribution, in/Si element proportion distribution, al/Mg element proportion distribution and Al/Si element proportion distribution;
The descending angle of the peak position of the In/Mg element proportion of the quantum well to the substrate direction is epsilon;
The descending angle of the peak position of the In/Si element proportion of the quantum well to the substrate direction is eta;
the descending angle of the peak position of the Al/Mg element proportion of the quantum well to the substrate direction is kappa;
The descending angle of the peak position of the Al/Si element proportion of the quantum well to the substrate direction is zeta;
Wherein: zeta is more than or equal to 25 degrees and less than or equal to kappa is more than or equal to eta is more than or equal to epsilon and less than or equal to 90 degrees.
Preferably, the change angles of the peak positions of the In element, the In/Al element proportion, the In/C element proportion, the In/O element proportion, the In/H element proportion, the In/Mg element proportion and the In/Si element proportion of the quantum well In the substrate direction have the following relationship:
Preferably, the change angles of the peak positions of the Al element, the Al/C element proportion, the Al/O element proportion, the Al/H element proportion, the Al/Mg element proportion and the Al/Si element proportion of the quantum well towards the substrate direction have the following relationship: omega is more than or equal to 10 degrees and less than or equal to rho is more than or equal to less than or equal to zeta is more than or equal to y is less than or equal.
Preferably, the quantum well is a periodic structure formed by a well layer and a barrier layer, and the quantum well period is q is more than or equal to 1 and less than or equal to 15;
The well layer of the quantum well is any one or any combination of InGaN, alInGaN, alInN, gaN, alGaN, inN, and the thickness of the well layer is 10-100 m;
The barrier layer of the quantum well is any one or any combination of GaN, alInGaN, alGaN, alN, alInN and the thickness is 5 to 200 meter;
The luminous wavelength of the quantum well is ultraviolet light with the wavelength of 200nm to 425nm, and the half-width of the wavelength is 10nm to 50nm.
Preferably, the n-type semiconductor is any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP, and the thickness of the n-type semiconductor is 50 to 90000 a;
The p-type semiconductor comprises any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP, and the thickness of the p-type semiconductor is 10 to 8000A;
The substrate comprises any one of sapphire, silicon, ge, ga 2O3, graphene, BN, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiN x, magnesia-alumina spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
The beneficial effects of the invention are as follows: according to the invention, through designing the distribution of piezoelectric polarization coefficient and spontaneous polarization coefficient in the quantum well in the semiconductor ultraviolet light emitting diode, the piezoelectric polarization and spontaneous polarization of the quantum well are regulated and controlled, the quantum limiting stark effect of the quantum well is reduced, the energy band inclination and electron overflow of the quantum well are reduced, the radiation recombination efficiency of the quantum well is improved, the photoelectric conversion efficiency of the ultraviolet light emitting diode is improved, and the efficiency attenuation of the ultraviolet light emitting diode under the condition of high current is improved from below 50% -70% to 20% -50%.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
Fig. 1 is a schematic structural diagram of a semiconductor ultraviolet light emitting diode according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of a semiconductor ultraviolet light emitting diode according to an embodiment of the present invention;
fig. 3 is a quantum well TEM transmission electron microscope image of a semiconductor ultraviolet light emitting diode according to an embodiment of the present invention.
Reference numerals:
100. a substrate, 101, an n-type semiconductor, 102, a quantum well, 103, a p-type semiconductor.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown in fig. 1 to 3, the present embodiment proposes a semiconductor ultraviolet light emitting diode including a substrate 100, an n-type semiconductor 101, a quantum well 102, and a p-type semiconductor 103, which are disposed in this order from bottom to top. The quantum well 102 has a piezoelectric polarization coefficient distribution and a spontaneous polarization coefficient distribution characteristic inside.
Specifically, in this embodiment, the semiconductor ultraviolet light emitting diode is provided with a substrate 100, an n-type semiconductor 101, a quantum well 102, and a p-type semiconductor 103 in this order from bottom to top. The quantum well 102 has a piezoelectric polarization coefficient distribution and a spontaneous polarization coefficient distribution characteristic inside.
Piezoelectric polarization refers to the phenomenon that when some dielectrics are deformed by external force in a certain direction, polarization occurs in the dielectric, and opposite charges are generated on two opposite surfaces of the dielectric. When the external force is removed, it returns to an uncharged state, a phenomenon known as the positive piezoelectric effect. When the direction of the force changes, the polarity of the charge changes. Conversely, when an electric field is applied in the polarization direction of the dielectrics, these dielectrics are deformed, and after the electric field is removed, the deformation of the dielectrics is eliminated, and this phenomenon is called the inverse piezoelectric effect.
Spontaneous polarization refers to a polarization state not caused by an external electric field but caused by the internal structure of the crystal. Specifically, positive and negative charge centers in a unit cell are not overlapped in a certain temperature range to form dipole moment, and the dipole moment presents polarity. This polarization phenomenon that exists without the action of an external electric field is called spontaneous polarization.
Based on the characteristics of the piezoelectric polarization and the spontaneous polarization, the present embodiment designs the piezoelectric polarization coefficient distribution and the spontaneous polarization coefficient distribution in the quantum well 102, which are specifically expressed as follows:
Piezoelectric polarization coefficient:
The piezoelectric polarization coefficient of the quantum well 102 has a curved distribution of sinusoidal function y=asin (bx+c) +d;
Spontaneous polarization coefficient:
the spontaneous polarization coefficient of the quantum well 102 has a curved distribution of cosine function y= Ecosn (fx+g) +h.
In the embodiment, by designing the distribution of piezoelectric polarization coefficient and spontaneous polarization coefficient in the quantum well 102 in the semiconductor ultraviolet light emitting diode, the piezoelectric polarization and spontaneous polarization of the quantum well 102 are regulated and controlled, the quantum confinement stark effect of the quantum well 102 is reduced, the energy band inclination and electron overflow of the quantum well 102 are reduced, the radiation recombination efficiency of the quantum well 102 is improved, the photoelectric conversion efficiency of the ultraviolet light emitting diode is improved, and the efficiency attenuation of the ultraviolet light emitting diode under the condition of high current is improved.
Further, in the present embodiment, the quantum well 102 further has In element distribution, al element distribution, and In/Al element ratio distribution therein. And the In element distribution, the Al element distribution, and the In/Al element ratio distribution In the quantum well 102 layer also have a certain tendency of variation In the directions toward the substrate 100 and the p-type semiconductor 103, and are specifically expressed as:
The peak position of In element of quantum well 102 tends to decrease toward substrate 100;
the peak position of the In element of the quantum well 102 tends to decrease toward the p-type semiconductor 103;
The peak position of the Al element of the quantum well 102 tends to decrease toward the substrate 100;
the peak position of the Al element of the quantum well 102 tends to decrease toward the p-type semiconductor 103;
the peak position of the In/Al element ratio of the quantum well 102 tends to decrease toward the substrate 100;
the peak position of the In/Al element ratio of the quantum well 102 tends to decrease toward the p-type semiconductor 103;
Wherein, the angle of decrease of the peak position of In element of quantum well 102 toward substrate 100 is α, the angle of decrease of the peak position of In element of quantum well 102 toward p-type semiconductor 103 is β, the angle of decrease of the peak position of Al element of quantum well 102 toward substrate 100 is δ, the angle of decrease of the peak position of Al element of quantum well 102 toward p-type semiconductor 103 is σ, the angle of decrease of the peak position of In/Al element ratio of quantum well 102 toward substrate 100 is γ, the angle of decrease of the peak position of In/Al element ratio of quantum well 102 toward p-type semiconductor 103 is θ, the relationship between the above-mentioned angle of decrease is: delta is more than or equal to 10 degrees and sigma is more than or equal to 10 degrees and theta is more than or equal to alpha and beta is more than or equal to 90 degrees.
According to the embodiment, through designing the variation trend of In element distribution, al element distribution and In/Al element proportion distribution In the quantum well 102 In the semiconductor ultraviolet light emitting diode, the quantum confinement stark effect of the quantum well 102 is further reduced, the energy band inclination and the electron overflow of the quantum well 102 are reduced, the radiation recombination efficiency of the quantum well 102 is improved, the photoelectric conversion efficiency of the ultraviolet light emitting diode is improved, and the efficiency attenuation of the ultraviolet light emitting diode under the condition of high current is improved.
Further, in the present embodiment, the quantum well 102 further has an In/C element ratio distribution, an In/O element ratio distribution, an In/H element ratio distribution, an Al/C element ratio distribution, an Al/O element ratio distribution, and an Al/H element ratio distribution. In addition, the In/C element proportion distribution, the In/O element proportion distribution, the In/H element proportion distribution, the Al/C element proportion distribution, the Al/O element proportion distribution and the Al/H element proportion distribution In the quantum well 102 layer also have a certain trend of change In the direction towards the substrate 100, and are specifically expressed as follows:
the peak position of the In/C element ratio of the quantum well 102 tends to decrease toward the substrate 100;
the peak position of the In/O element ratio of the quantum well 102 tends to decrease toward the substrate 100;
The peak position of the In/H element ratio of the quantum well 102 tends to decrease toward the substrate 100;
the peak position of the Al/C element ratio of the quantum well 102 is in a downward trend towards the substrate 100;
the peak position of the Al/O element ratio of the quantum well 102 tends to decrease toward the substrate 100;
the peak position of the Al/H element ratio of the quantum well 102 tends to decrease toward the substrate 100;
wherein the peak position of the In/C element ratio of the quantum well 102 is lowered toward the substrate 100 by an angle of The angle of decrease In the direction of the substrate 100 of the peak position of the In/O element ratio of the quantum well 102 is ψ, the angle of decrease In the direction of the substrate 100 of the peak position of the In/H element ratio of the quantum well 102 is μ, the angle of decrease In the direction of the substrate 100 of the peak position of the Al/C element ratio of the quantum well 102 is v, the angle of decrease In the direction of the substrate 100 of the peak position of the Al/O element ratio of the quantum well 102 is ρ, the angle of decrease In the direction of the substrate 100 of the peak position of the Al/H element ratio of the quantum well 102 is ω, and the relationship between the above-mentioned angle of decrease is: /(I)
According to the embodiment, the change trend of In/C element proportion distribution, in/O element proportion distribution, in/H element proportion distribution, al/C element proportion distribution, al/O element proportion distribution and Al/H element proportion distribution In the quantum well 102 In the semiconductor ultraviolet light emitting diode is designed, so that the quantum confinement stark effect of the quantum well 102 is further reduced, the energy band inclination and electron overflow of the quantum well 102 are reduced, the radiation recombination efficiency of the quantum well 102 is improved, the photoelectric conversion efficiency of the ultraviolet light emitting diode is improved, and the efficiency attenuation of the ultraviolet light emitting diode under the condition of high current is improved.
Further, in the present embodiment, the quantum well 102 further has In/Mg element ratio distribution, in/Si element ratio distribution, al/Mg element ratio distribution, and Al/Si element ratio distribution therein. In addition, the In/Mg element proportion distribution, the In/Si element proportion distribution, the Al/Mg element proportion distribution and the Al/Si element proportion distribution In the quantum well 102 layer also have a certain variation trend In the direction towards the substrate 100, and are specifically expressed as follows:
the peak position of the In/Mg element ratio of the quantum well 102 tends to decrease toward the substrate 100;
the peak position of the In/Si element ratio of the quantum well 102 tends to decrease toward the substrate 100;
the peak position of the Al/Mg element ratio of the quantum well 102 is in a descending trend towards the substrate 100;
the peak position of the Al/Si element ratio of the quantum well 102 tends to decrease toward the substrate 100;
Wherein, the falling angle of the peak position of the In/Mg element ratio of the quantum well 102 toward the substrate 100 direction is ε, the falling angle of the peak position of the In/Si element ratio of the quantum well 102 toward the substrate 100 direction is η, the falling angle of the peak position of the Al/Mg element ratio of the quantum well 102 toward the substrate 100 direction is κ, the falling angle of the peak position of the Al/Si element ratio of the quantum well 102 toward the substrate 100 direction is ζ, and the relationship between the falling angles is: zeta is more than or equal to 25 degrees and less than or equal to kappa is more than or equal to eta is more than or equal to epsilon and less than or equal to 90 degrees.
According to the embodiment, the change trend of In/Mg element proportion distribution, in/Si element proportion distribution, al/Mg element proportion distribution and Al/Si element proportion distribution In the quantum well 102 In the semiconductor ultraviolet light emitting diode is designed, so that the quantum confinement stark effect of the quantum well 102 is further reduced, the energy band inclination and the electron overflow of the quantum well 102 are reduced, the radiation recombination efficiency of the quantum well 102 is improved, the photoelectric conversion efficiency of the ultraviolet light emitting diode is improved, and the efficiency attenuation of the ultraviolet light emitting diode under the condition of high current is improved.
In addition, in the present embodiment, the change angles of the peak positions of the In element, the In/Al element ratio, the In/C element ratio, the In/O element ratio, the In/H element ratio, the In/Mg element ratio, and the In/Si element ratio of the quantum well 102 to the substrate 100 direction have the following relationship:
The angles of change of the peak positions of the Al element, the Al/C element ratio, the Al/O element ratio, the Al/H element ratio, the Al/Mg element ratio, and the Al/Si element ratio of the quantum well 102 to the substrate 100 direction have the following relationship: omega is more than or equal to 10 degrees and less than or equal to rho is more than or equal to less than or equal to zeta is more than or equal to y is less than or equal.
Further, the quantum well 102 is a periodic structure formed by a well layer and a barrier layer, and the period of the quantum well 102 is q is more than or equal to 1 and less than or equal to 15. The well layer of the quantum well 102 is any one or any combination of InGaN, alInGaN, alInN, gaN, alGaN, inN, and the well layer thickness is 10 to 100 a. The barrier layer of the quantum well 102 is any one or any combination of GaN, alInGaN, alGaN, alN, alInN a to 200 a thick. The quantum well 102 emits ultraviolet light having a wavelength of 200nm to 425nm and a half-width of 10nm to 50nm.
The n-type semiconductor 101 is any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP, and the thickness of the n-type semiconductor 101 is 50 to 90000 a.
The p-type semiconductor 103 includes any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP, and the thickness of the p-type semiconductor 103 is 10 to 8000 a.
The substrate 100 includes any one of sapphire, silicon, ge, ga 2O3, graphene, BN, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and a LiGaO 2 composite substrate.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1.A semiconductor ultraviolet light emitting diode comprises a substrate, an n-type semiconductor, a quantum well and a p-type semiconductor which are sequentially arranged from bottom to top, and is characterized in that the quantum well has piezoelectric polarization coefficient distribution and spontaneous polarization coefficient distribution characteristics.
2. The semiconductor ultraviolet violet light emitting diode of claim 1, wherein the piezoelectric polarization coefficient of the quantum well has a curved distribution of sinusoidal function y = Asin (bx+c) +d.
3. The semiconductor ultraviolet light emitting diode of claim 1, wherein the spontaneous polarization coefficient of the quantum well has a curved distribution of cosine function y = Ecosn (fx+g) +h.
4. The semiconductor ultraviolet violet light emitting diode of claim 1, wherein the quantum well further has an In element distribution, an Al element distribution, and an In/Al element ratio distribution therein;
the descending angle of the peak position of the In element of the quantum well towards the substrate direction is alpha;
The descending angle of the peak position of the In element of the quantum well to the p-type semiconductor direction is beta;
The descending angle of the peak position of the Al element of the quantum well towards the substrate direction is delta;
The descending angle of the peak position of the Al element of the quantum well to the p-type semiconductor direction is sigma;
the descending angle of the peak position of the In/Al element proportion of the quantum well to the substrate direction is gamma;
the descending angle of the peak position of the In/Al element proportion of the quantum well to the p-type semiconductor direction is theta;
Wherein: delta is more than or equal to 10 degrees and sigma is more than or equal to 10 degrees and theta is more than or equal to alpha and beta is more than or equal to 90 degrees.
5. The semiconductor ultraviolet light emitting diode of claim 4, wherein the quantum well further has an In/C element ratio distribution, an In/O element ratio distribution, an In/H element ratio distribution, an Al/C element ratio distribution, an Al/O element ratio distribution, and an Al/H element ratio distribution therein;
The decreasing angle of the peak position of the In/C element proportion of the quantum well to the substrate direction is
The descending angle of the peak position of the In/O element proportion of the quantum well to the substrate direction is psi;
the descending angle of the peak position of the In/H element proportion of the quantum well to the substrate direction is mu;
the descending angle of the peak position of the Al/C element proportion of the quantum well towards the substrate direction is upsilon;
the descending angle of the peak position of the Al/O element proportion of the quantum well to the substrate direction is rho;
the descending angle of the peak position of the Al/H element proportion of the quantum well to the substrate direction is omega;
wherein:
6. The semiconductor ultraviolet violet light emitting diode of claim 5, wherein the quantum well further has In/Mg element ratio distribution, in/Si element ratio distribution, al/Mg element ratio distribution, and Al/Si element ratio distribution therein;
The descending angle of the peak position of the In/Mg element proportion of the quantum well to the substrate direction is epsilon;
The descending angle of the peak position of the In/Si element proportion of the quantum well to the substrate direction is eta;
the descending angle of the peak position of the Al/Mg element proportion of the quantum well to the substrate direction is kappa;
The descending angle of the peak position of the Al/Si element proportion of the quantum well to the substrate direction is zeta;
Wherein: zeta is more than or equal to 25 degrees and less than or equal to kappa is more than or equal to eta is more than or equal to epsilon and less than or equal to 90 degrees.
7. The semiconductor ultraviolet light-emitting diode according to claim 6, wherein the change angle of the peak position of the In element, the In/Al element ratio, the In/C element ratio, the In/O element ratio, the In/H element ratio, the In/Mg element ratio, and the In/Si element ratio of the quantum well to the substrate direction has the following relationship:
8. The semiconductor ultraviolet light emitting diode according to claim 6, wherein the angle of change of the peak position of the Al element, the Al/C element ratio, the Al/O element ratio, the Al/H element ratio, the Al/Mg element ratio, the Al/Si element ratio of the quantum well to the substrate direction has the following relationship: omega is more than or equal to 10 degrees and less than or equal to rho is more than or equal to less than or equal to zeta is more than or equal to y is less than or equal.
9. The semiconductor ultraviolet light-emitting diode according to claim 1, wherein the quantum well is a periodic structure consisting of a well layer and a barrier layer, and the quantum well period is q is 1-15;
The well layer of the quantum well is any one or any combination of InGaN, alInGaN, alInN, gaN, alGaN, inN, and the thickness of the well layer is 10-100 m;
The barrier layer of the quantum well is any one or any combination of GaN, alInGaN, alGaN, alN, alInN and the thickness is 5 to 200 meter;
The luminous wavelength of the quantum well is ultraviolet light with the wavelength of 200nm to 425nm, and the half-width of the wavelength is 10nm to 50nm.
10. The semiconductor ultraviolet violet light emitting diode of claim 1, wherein the n-type semiconductor is any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP, and the n-type semiconductor has a thickness of 50 to 90000 a;
The p-type semiconductor comprises any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP, and the thickness of the p-type semiconductor is 10 to 8000A;
The substrate comprises any one of sapphire, silicon, ge, ga 2O3, graphene, BN, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiN x, magnesia-alumina spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410217528.8A CN118039757A (en) | 2024-02-28 | 2024-02-28 | Semiconductor ultraviolet light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410217528.8A CN118039757A (en) | 2024-02-28 | 2024-02-28 | Semiconductor ultraviolet light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118039757A true CN118039757A (en) | 2024-05-14 |
Family
ID=90992925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410217528.8A Pending CN118039757A (en) | 2024-02-28 | 2024-02-28 | Semiconductor ultraviolet light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118039757A (en) |
-
2024
- 2024-02-28 CN CN202410217528.8A patent/CN118039757A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116230819A (en) | Semiconductor light-emitting diode | |
| CN116632128A (en) | Semiconductor light-emitting element | |
| CN116190510A (en) | Semiconductor light-emitting diode | |
| CN114497304A (en) | Semiconductor element | |
| CN219371055U (en) | Semiconductor light-emitting diode | |
| CN116526296A (en) | Semiconductor ultraviolet light-emitting diode | |
| CN117174796A (en) | Semiconductor light-emitting element | |
| CN118039757A (en) | Semiconductor ultraviolet light-emitting diode | |
| CN219677771U (en) | Semiconductor ultraviolet light-emitting diode | |
| CN118099305A (en) | Semiconductor ultraviolet luminous element | |
| CN116646434A (en) | Semiconductor ultraviolet light-emitting diode | |
| CN219917198U (en) | Semiconductor light-emitting diode | |
| CN221282142U (en) | Semiconductor ultraviolet light-emitting diode | |
| CN117995962A (en) | Semiconductor element with p-type three-dimensional hole injection layer | |
| CN117525228A (en) | Semiconductor ultraviolet, ultraviolet and deep ultraviolet light-emitting diode | |
| CN220065727U (en) | Semiconductor light-emitting element | |
| CN116130564B (en) | Semiconductor light-emitting diode | |
| CN116865099A (en) | Semiconductor light-emitting element with carrier concentration matching layer | |
| CN117976789A (en) | Gallium nitride-based semiconductor light-emitting element | |
| CN117727847A (en) | Semiconductor ultraviolet light-emitting diode | |
| CN116581218A (en) | Semiconductor light-emitting element | |
| CN116666513A (en) | Semiconductor ultraviolet light-emitting diode | |
| CN117995959A (en) | Semiconductor light-emitting element with hole expansion layer | |
| CN117954548A (en) | Semiconductor light-emitting element with hole tunneling layer | |
| CN118099308A (en) | Nitride semiconductor light-emitting element with local effect quantum well |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |