CN116646434A - Semiconductor ultraviolet light-emitting diode - Google Patents

Semiconductor ultraviolet light-emitting diode Download PDF

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Publication number
CN116646434A
CN116646434A CN202310782695.2A CN202310782695A CN116646434A CN 116646434 A CN116646434 A CN 116646434A CN 202310782695 A CN202310782695 A CN 202310782695A CN 116646434 A CN116646434 A CN 116646434A
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layer
well layer
equal
quantum well
superlattice
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Inventor
李水清
王星河
张江勇
蔡鑫
陈婉君
胡志勇
请求不公布姓名
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Anhui Geen Semiconductor Co ltd
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Anhui Geen Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The application provides a semiconductor ultraviolet light emitting diode, which comprises a substrate, an n-type semiconductor, a superlattice layer, a quantum well layer and a p-type semiconductor, wherein the substrate, the n-type semiconductor, the superlattice layer, the quantum well layer and the p-type semiconductor are sequentially arranged from bottom to top, the piezoelectric polarization coefficient of the quantum well layer is smaller than or equal to that of the superlattice layer, the spontaneous polarization coefficient of the quantum well layer is larger than or equal to that of the superlattice layer, and the dielectric constant coefficient of the quantum well layer is larger than or equal to that of the superlattice layer. According to the application, through designing the relation among piezoelectric polarization coefficient, spontaneous polarization coefficient and dielectric constant coefficient between the quantum well layer and the superlattice layer, the spontaneous polarization and piezoelectric polarization effect between the quantum well layer and the superlattice layer are regulated and controlled, the quantum confinement stark effect of a thermal state and a cold state is inhibited, the electron hole concentration and the matching degree of the quantum well in the ultraviolet light emitting diode in the thermal state are improved, the non-radiative recombination and SRH recombination of the quantum well in the thermal state are reduced, and the thermal state cold state efficiency proportion of the ultraviolet light emitting diode is improved.

Description

Semiconductor ultraviolet light-emitting diode
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor ultraviolet light-emitting diode.
Background
The semiconductor element, especially the semiconductor light-emitting element, has a wide wavelength range with adjustable range, high luminous efficiency, energy saving, environmental protection, long service life exceeding 10 ten thousand hours, small size, multiple application scenes, strong designability and other factors, blue light (with the luminous wavelength of 440-460 nm) and green light (with the luminous wavelength of 520-540 nm) are matched with fluorescent powder to gradually replace incandescent lamps and fluorescent lamps, a light source for common household illumination is grown, and new scenes such as an indoor high-resolution display screen, an outdoor display screen, mini-LEDs, micro-LEDs, mobile TV backlights, backlight illumination, street lamps, automobile headlamps, daytime running lamps, in-car atmosphere lamps, flashlights and other application fields are widely used. The UVA band of the ultraviolet light-emitting diode (with the light-emitting wavelength of 350-420 nm) can be applied to the application fields of 3D curing, nail beautifying curing, phototherapy, skin treatment, plant illumination and the like.
The semiconductor ultraviolet light-emitting diode grows by using a sapphire substrate, and has large lattice mismatch and thermal mismatch, so that higher defect density and polarization effect are caused, and the light-emitting efficiency of the semiconductor light-emitting element is reduced; meanwhile, the nitride semiconductor structure has non-central symmetry, stronger spontaneous polarization can be generated along the direction of the c axis, and piezoelectric polarization effects of lattice mismatch are overlapped to form an intrinsic polarization field; the intrinsic polarization field is along the (001) direction, so that the multiple quantum well layer generates stronger quantum confinement Stark effect, the energy band inclination and the electron hole wave function spatial separation are caused, and the radiation recombination efficiency of electron holes is reduced; the hole ionization efficiency of the semiconductor ultraviolet light emitting diode is far lower than the electron ionization efficiency, so that the hole concentration is more than 2 orders of magnitude lower than the electron concentration, excessive electrons can overflow from the multiple quantum wells to the second conductive type semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, holes of the second conductive type semiconductor are difficult to effectively inject into the multiple quantum wells, the hole injection efficiency is low, and the light emitting efficiency of the multiple quantum wells is low. Unlike traditional semiconductor blue light emitting diode, semiconductor ultraviolet light emitting diode has short wavelength and low In content of quantum well, and can not form quantum limiting effect of In component fluctuation In quantum well region, resulting In weak electron hole local effect of quantum well, further aggravating electron hole mismatch.
Disclosure of Invention
In order to solve one of the technical problems, the application provides a semiconductor ultraviolet light emitting diode.
The embodiment of the application provides a semiconductor ultraviolet light emitting diode, which comprises a substrate, an n-type semiconductor, a superlattice layer, a quantum well layer and a p-type semiconductor, wherein the substrate, the n-type semiconductor, the superlattice layer, the quantum well layer and the p-type semiconductor are sequentially arranged from bottom to top, the piezoelectric polarization coefficient of the quantum well layer is smaller than or equal to that of the superlattice layer, the spontaneous polarization coefficient of the quantum well layer is larger than or equal to that of the superlattice layer, and the dielectric constant coefficient of the quantum well layer is larger than or equal to that of the superlattice layer.
Preferably, the superlattice layer is a periodic structure formed by a well layer and a barrier layer, and the period is p: p is more than or equal to 1 and less than or equal to 30; the piezoelectric polarization coefficient a of the superlattice layer well layer is smaller than or equal to the piezoelectric polarization coefficient b of the superlattice layer barrier layer, the spontaneous polarization coefficient e of the superlattice layer well layer is larger than or equal to the spontaneous polarization coefficient f of the superlattice layer barrier layer, and the dielectric constant coefficient i of the superlattice layer well layer is larger than or equal to the dielectric constant coefficient j of the superlattice layer barrier layer.
Preferably, the quantum well layer is a periodic structure consisting of a well layer and a barrier layer, and the period is q: q is more than or equal to 3 and less than or equal to 20; the piezoelectric polarization coefficient c of the quantum well layer is smaller than or equal to the piezoelectric polarization coefficient d of the quantum well layer barrier layer, the spontaneous polarization coefficient g of the quantum well layer is larger than or equal to the spontaneous polarization coefficient h of the quantum well layer barrier layer, and the dielectric constant k of the quantum well layer is larger than or equal to the dielectric constant l of the quantum well layer barrier layer.
Preferably, the relationship among the piezoelectric polarization coefficient a of the superlattice layer well layer, the piezoelectric polarization coefficient b of the superlattice layer barrier layer, the piezoelectric polarization coefficient c of the quantum well layer and the piezoelectric polarization coefficient d of the quantum well layer barrier layer is: a is more than or equal to 0.5 and less than or equal to C is more than or equal to d is more than or equal to b is more than or equal to 2 (C/m) 2 )。
Preferably, the relationship among the spontaneous polarization coefficient e of the superlattice layer well layer, the spontaneous polarization coefficient f of the superlattice layer barrier layer, the spontaneous polarization coefficient g of the quantum well layer and the spontaneous polarization coefficient h of the quantum well layer barrier layer is: -0.10.ltoreq.f.ltoreq.h.ltoreq.g.ltoreq.e.ltoreq.0.01 (C/m) 2 )。
Preferably, the relationship among the dielectric constant i of the superlattice layer well layer, the dielectric constant j of the superlattice layer barrier layer, the dielectric constant k of the quantum well layer and the dielectric constant l of the quantum well layer barrier layer is: j is more than or equal to 8 and l is more than or equal to i is more than or equal to k is more than or equal to 12.
Preferably, the well layer of the superlattice layer is any one or any combination of GaN, alInGaN, alInN, alGaN, and the thickness of the superlattice well layer is 10-150 angstroms; the barrier layer of the superlattice layer is any one or any combination of GaN, alInGaN, alInN, alGaN, alN, and the thickness of the barrier layer of the superlattice layer is 5-150 m.
Preferably, the well layer of the quantum well layer is any one or any combination of InGaN, alInGaN, gaN, alInN, alGaN, inN, and the thickness of the well layer is 5-100 angstroms; the barrier layer of the quantum well layer is any one or any combination of GaN, alInGaN, alInN, alGaN, alN, the thickness of the barrier layer is 5-200 Emeter, and the light emitted by the quantum well layer is 200-420 nm ultraviolet light or purple light.
Preferably, the n-type semiconductor and the p-type semiconductor include GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP, alGaP, inGaP, any one or any combination thereof; the thickness of the n-type semiconductor is 10 to 90000 a; the p-type semiconductor has a thickness of 10 to 8000 a.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the application are as follows: according to the application, through designing the relation among piezoelectric polarization coefficient, spontaneous polarization coefficient and dielectric constant coefficient between the quantum well layer and the superlattice layer, the spontaneous polarization and piezoelectric polarization effect between the quantum well layer and the superlattice layer are regulated and controlled, quantum confinement stark effect of hot state (85 DEG) and cold state (25 DEG) is inhibited, electron hole concentration and matching degree of the quantum well in the ultraviolet light emitting diode in the hot state are improved, non-radiative recombination and SRH recombination of the quantum well in the hot state are reduced, and the hot state cold state efficiency proportion of the ultraviolet light emitting diode is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
fig. 1 is a schematic structural diagram of a semiconductor ultraviolet light emitting diode according to an embodiment of the present application;
FIG. 2 is a SIMS secondary ion mass spectrum of a semiconductor ultraviolet light emitting diode according to an embodiment of the present application;
FIG. 3 is a TEM transmission electron microscope image of a superlattice layer of a semiconductor ultraviolet light emitting diode according to an embodiment of the present application;
fig. 4 is a TEM transmission electron microscope image of a quantum well layer of a semiconductor ultraviolet light emitting diode according to an embodiment of the present application;
fig. 5 is a p-type semiconductor TEM transmission electron microscope of a semiconductor ultraviolet light emitting diode according to an embodiment of the present application.
Reference numerals:
100. a substrate, 101, an n-type semiconductor, 102, a superlattice layer, 103, a quantum well layer, 104, a p-type semiconductor.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown in fig. 1 to 5, the present embodiment proposes a semiconductor ultraviolet light emitting diode including a substrate 100, an n-type semiconductor 101, a superlattice layer 102, a quantum well layer 103, and a p-type semiconductor 104, which are disposed in this order from bottom to top.
Specifically, in the present embodiment, the superlattice layer 102 and the quantum well layer 103 each have piezoelectric polarization, spontaneous polarization, and permittivity parameter characteristics. In addition, the spontaneous polarization and piezoelectric polarization effects of the semiconductor ultraviolet light emitting diode can be influenced by piezoelectric polarization, spontaneous polarization and dielectric constant coefficient, and the piezoelectric polarization control method has an important effect on improving the working efficiency of the semiconductor ultraviolet light emitting diode.
Piezoelectric polarization refers to the phenomenon that when some dielectrics are deformed by external force in a certain direction, polarization occurs in the dielectric, and opposite charges are generated on two opposite surfaces of the dielectric. When the external force is removed, it returns to an uncharged state, a phenomenon known as the positive piezoelectric effect. When the direction of the force changes, the polarity of the charge changes. Conversely, when an electric field is applied in the polarization direction of the dielectrics, these dielectrics are deformed, and after the electric field is removed, the deformation of the dielectrics is eliminated, and this phenomenon is called the inverse piezoelectric effect.
Spontaneous polarization refers to a polarization state not caused by an external electric field but caused by the internal structure of the crystal. Specifically, positive and negative charge centers in a unit cell are not overlapped in a certain temperature range to form dipole moment, and the dipole moment presents polarity. This polarization phenomenon that exists without the action of an external electric field is called spontaneous polarization.
The permittivity refers to the physical quantity of a substance having a lattice structure, which is a physical quantity of which a part of electric charges can be held by an electric field to generate energy in a linear relationship with the strength of the electric field, and which is a dielectric constant in which an electric potential changes when an object generates a bias current in the electric field.
The present embodiment designs the correlation among the piezoelectric polarization coefficient, the spontaneous polarization coefficient and the dielectric constant coefficient between the superlattice layer 102 and the quantum well layer 103 based on the characteristics of the piezoelectric polarization, the spontaneous polarization and the dielectric constant coefficient, thereby realizing the purpose of regulating and controlling the spontaneous polarization and the piezoelectric polarization effect between the quantum well layer 103 and the superlattice layer 102 and improving the working efficiency of the semiconductor ultraviolet light emitting diode.
Specifically, as shown in fig. 2 to 5, in this embodiment, the superlattice layer 102 is a periodic structure formed by a well layer and a barrier layer, and the period is p: p is more than or equal to 1 and less than or equal to 30. The relationship between the well layer and the barrier layer of the superlattice layer 102, which has piezoelectric polarization coefficient, spontaneous polarization coefficient and dielectric constant coefficient, is specifically as follows:
the relationship between the well layer and the barrier layer of the superlattice layer 102 with respect to the piezoelectric polarization coefficient is: the piezoelectric polarization coefficient a of the well layer of the superlattice layer 102 is smaller than or equal to the piezoelectric polarization coefficient b of the barrier layer of the superlattice layer 102, and a is more than or equal to 0.5 and less than or equal to b and less than or equal to 2 (C/m) 2 )；
The relationship between the well layer and the barrier layer of the superlattice layer 102 with respect to the spontaneous polarization coefficient is: the spontaneous polarization coefficient e of the well layer of the superlattice layer 102 is greater than or equal to the spontaneous polarization coefficient f of the barrier layer of the superlattice layer 102, and f is more than or equal to-0.10 and less than or equal to e is more than or equal to-0.01 (C/m) 2 )；
The relationship between the well layer and the barrier layer of the superlattice layer 102 with respect to the dielectric constant is: the dielectric constant i of the well layer of the superlattice layer 102 is larger than or equal to the dielectric constant j of the barrier layer of the superlattice layer 102, and j is more than or equal to 8 and less than or equal to i and less than or equal to 12.
The quantum well layer 103 is also a periodic structure composed of a well layer and a barrier layer, and the period is q: q is more than or equal to 3 and less than or equal to 20. The relationship between the quantum well layer 103 and the barrier layer among the piezoelectric polarization coefficient, the spontaneous polarization coefficient and the dielectric constant coefficient is as follows:
the relationship between the well layer and barrier layer of the quantum well layer 103 with respect to the piezoelectric polarization coefficient is: the piezoelectric polarization coefficient C of the well layer of the quantum well layer 103 is smaller than or equal to the piezoelectric polarization coefficient d of the barrier layer of the quantum well layer 103, and C is more than or equal to 0.5 and less than or equal to d is more than or equal to 2 (C/m) 2 )；
The relationship between the well layer and the barrier layer of the quantum well layer 103 with respect to the spontaneous polarization coefficient is: the spontaneous polarization coefficient g of the well layer of the quantum well layer 103 is greater than or equal to the spontaneous polarization coefficient h of the barrier layer of the quantum well layer 103, and h is more than or equal to-0.10 and g is more than or equal to-0.01 (C/m) 2 )；
The relationship between the well layer and the barrier layer of the quantum well layer 103 with respect to the dielectric constant coefficient is: the dielectric constant k of the well layer of the quantum well layer 103 is larger than or equal to the dielectric constant l of the barrier layer of the quantum well layer 103, and l is more than or equal to 8 and less than or equal to k and less than or equal to 12.
Based on the relationship among the piezoelectric polarization coefficient, the spontaneous polarization coefficient, and the dielectric constant coefficient among the superlattice layer 102 well layer, the superlattice layer 102 barrier layer, the quantum well layer 103 well layer, and the quantum well layer 103 barrier layer, the present embodiment further defines the relationship:
the relationship among the piezoelectric polarization coefficient a of the superlattice layer 102 well layer, the piezoelectric polarization coefficient b of the superlattice layer 102 barrier layer, the piezoelectric polarization coefficient c of the quantum well layer 103 well layer and the piezoelectric polarization coefficient d of the quantum well layer 103 barrier layer is: a is more than or equal to 0.5 and less than or equal to C is more than or equal to d is more than or equal to b is more than or equal to 2 (C/m) 2 )；
The relationship among the spontaneous polarization coefficient e of the superlattice layer 102 well layer, the spontaneous polarization coefficient f of the superlattice layer 102 barrier layer, the spontaneous polarization coefficient g of the quantum well layer 103 well layer, and the spontaneous polarization coefficient h of the quantum well layer 103 barrier layer is: -0.10.ltoreq.f.ltoreq.h.ltoreq.g.ltoreq.e.ltoreq.0.01 (C/m) 2 )；
The relationship among the dielectric constant i of the superlattice layer 102 well layer, the dielectric constant j of the superlattice layer 102 barrier layer, the dielectric constant k of the quantum well layer 103 well layer and the dielectric constant l of the quantum well layer 103 barrier layer is: j is more than or equal to 8 and l is more than or equal to i is more than or equal to k is more than or equal to 12.
According to the embodiment, through designing the relation among piezoelectric polarization coefficients, spontaneous polarization coefficients and dielectric constant coefficients between the quantum well layer 103 and the superlattice layer 102, the spontaneous polarization and piezoelectric polarization effects between the quantum well layer 103 and the superlattice layer 102 are regulated, quantum confinement stark effects of a hot state (85 DEG) and a cold state (25 DEG) are restrained, electron hole concentration and matching degree of a quantum well in the ultraviolet light emitting diode in the hot state are improved, non-radiative recombination and SRH recombination of the quantum well in the hot state are reduced, and the hot state and cold state efficiency proportion of the ultraviolet light emitting diode is improved.
Further, the well layer of the superlattice layer 102 is any one or any combination of GaN, alInGaN, alInN, alGaN, and the thickness of the superlattice well layer is 10-150 a/m; the barrier layer of the superlattice layer 102 is any one or any combination of GaN, alInGaN, alInN, alGaN, alN, and the thickness of the barrier layer of the superlattice is 5 to 150 a.
The well layer of the quantum well layer 103 is any one or any combination of InGaN, alInGaN, gaN, alInN, alGaN, inN, and the thickness of the well layer is 5-100 m; the barrier layer of the quantum well layer 103 is any one or any combination of GaN, alInGaN, alInN, alGaN, alN, the thickness is 5-200 a m, and the light emitted by the quantum well layer 103 is 200-420 nm ultraviolet light or ultraviolet light.
The n-type semiconductor 101 and the p-type semiconductor 104 include GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP; the thickness of the n-type semiconductor 101 is 10 to 90000 a; the thickness of the p-type semiconductor 104 is 10 to 8000 a.
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (10)

1. The semiconductor ultraviolet light-emitting diode is characterized by comprising a substrate, an n-type semiconductor, a superlattice layer, a quantum well layer and a p-type semiconductor which are sequentially arranged from bottom to top, wherein the piezoelectric polarization coefficient of the quantum well layer is smaller than or equal to that of the superlattice layer, the spontaneous polarization coefficient of the quantum well layer is larger than or equal to that of the superlattice layer, and the dielectric constant coefficient of the quantum well layer is larger than or equal to that of the superlattice layer.
2. The semiconductor ultraviolet light emitting diode of claim 1, wherein the superlattice layer is a periodic structure comprising a well layer and a barrier layer, and the period is p: p is more than or equal to 1 and less than or equal to 30; the piezoelectric polarization coefficient a of the superlattice layer well layer is smaller than or equal to the piezoelectric polarization coefficient b of the superlattice layer barrier layer, the spontaneous polarization coefficient e of the superlattice layer well layer is larger than or equal to the spontaneous polarization coefficient f of the superlattice layer barrier layer, and the dielectric constant coefficient i of the superlattice layer well layer is larger than or equal to the dielectric constant coefficient j of the superlattice layer barrier layer.
3. The semiconductor ultraviolet light emitting diode of claim 2, wherein the quantum well layer is a periodic structure comprising a well layer and a barrier layer, and the period is q: q is more than or equal to 3 and less than or equal to 20; the piezoelectric polarization coefficient c of the quantum well layer is smaller than or equal to the piezoelectric polarization coefficient d of the quantum well layer barrier layer, the spontaneous polarization coefficient g of the quantum well layer is larger than or equal to the spontaneous polarization coefficient h of the quantum well layer barrier layer, and the dielectric constant k of the quantum well layer is larger than or equal to the dielectric constant l of the quantum well layer barrier layer.
4. A semiconductor violet light according to claim 3The ultraviolet light emitting diode is characterized in that the relation among the piezoelectric polarization coefficient a of the superlattice layer well layer, the piezoelectric polarization coefficient b of the superlattice layer barrier layer, the piezoelectric polarization coefficient c of the quantum well layer and the piezoelectric polarization coefficient d of the quantum well layer barrier layer is as follows: a is more than or equal to 0.5 and less than or equal to C is more than or equal to d is more than or equal to b is more than or equal to 2 (C/m) 2 )。
5. The semiconductor ultraviolet light emitting diode according to claim 3, wherein the relationship among the spontaneous polarization coefficient e of the superlattice layer well layer, the spontaneous polarization coefficient f of the superlattice layer barrier layer, the spontaneous polarization coefficient g of the quantum well layer, and the spontaneous polarization coefficient h of the quantum well layer barrier layer is: -0.10.ltoreq.f.ltoreq.h.ltoreq.g.ltoreq.e.ltoreq.0.01 (C/m) 2 )。
6. The semiconductor ultraviolet light emitting diode according to claim 3, wherein the relationship among the dielectric constant i of the superlattice layer well layer, the dielectric constant j of the superlattice layer barrier layer, the dielectric constant k of the quantum well layer and the dielectric constant l of the quantum well layer barrier layer is: j is more than or equal to 8 and l is more than or equal to i is more than or equal to k is more than or equal to 12.
7. The semiconductor ultraviolet light emitting diode of claim 2, wherein the well layer of the superlattice layer is any one or any combination of GaN, alInGaN, alInN, alGaN, and the superlattice well layer has a thickness of 10 to 150 angstroms; the barrier layer of the superlattice layer is any one or any combination of GaN, alInGaN, alInN, alGaN, alN, and the thickness of the barrier layer of the superlattice layer is 5-150 m.
8. The semiconductor ultraviolet light emitting diode of claim 3, wherein the well layer of the quantum well layer is any one or any combination of InGaN, alInGaN, gaN, alInN, alGaN, inN, and the well layer has a thickness of 5 to 100 angstroms; the barrier layer of the quantum well layer is any one or any combination of GaN, alInGaN, alInN, alGaN, alN, the thickness of the barrier layer is 5-200 Emeter, and the light emitted by the quantum well layer is 200-420 nm ultraviolet light or purple light.
9. The semiconductor ultraviolet light emitting diode as recited in claim 1, wherein the n-type semiconductor and p-type semiconductor comprises GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP; the thickness of the n-type semiconductor is 10 to 90000 a; the p-type semiconductor has a thickness of 10 to 8000 a.
10. The semiconductor ultraviolet light emitting diode of claim 1, wherein the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
CN202310782695.2A 2023-06-29 2023-06-29 Semiconductor ultraviolet light-emitting diode Pending CN116646434A (en)

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CN202310782695.2A CN116646434A (en) 2023-06-29 2023-06-29 Semiconductor ultraviolet light-emitting diode

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