CN117897814A - 信号传输装置和绝缘芯片 - Google Patents
信号传输装置和绝缘芯片 Download PDFInfo
- Publication number
- CN117897814A CN117897814A CN202280058278.7A CN202280058278A CN117897814A CN 117897814 A CN117897814 A CN 117897814A CN 202280058278 A CN202280058278 A CN 202280058278A CN 117897814 A CN117897814 A CN 117897814A
- Authority
- CN
- China
- Prior art keywords
- insulating layer
- coil
- chip
- thickness
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F19/00—Fixed transformers or mutual inductances of the signal type
- H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
- H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Coils Or Transformers For Communication (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021140076 | 2021-08-30 | ||
| JP2021-140076 | 2021-08-30 | ||
| PCT/JP2022/030341 WO2023032612A1 (ja) | 2021-08-30 | 2022-08-08 | 信号伝達装置および絶縁チップ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117897814A true CN117897814A (zh) | 2024-04-16 |
Family
ID=85412228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280058278.7A Pending CN117897814A (zh) | 2021-08-30 | 2022-08-08 | 信号传输装置和绝缘芯片 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240186310A1 (https=) |
| JP (1) | JPWO2023032612A1 (https=) |
| CN (1) | CN117897814A (https=) |
| DE (1) | DE112022004242T5 (https=) |
| WO (1) | WO2023032612A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7631157B2 (ja) * | 2021-09-17 | 2025-02-18 | 株式会社東芝 | 半導体装置 |
| WO2025094846A1 (ja) * | 2023-11-01 | 2025-05-08 | ローム株式会社 | 半導体装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3839267B2 (ja) * | 2001-03-08 | 2006-11-01 | 株式会社ルネサステクノロジ | 半導体装置及びそれを用いた通信端末装置 |
| JP3596813B2 (ja) * | 2002-08-09 | 2004-12-02 | 沖電気工業株式会社 | 半導体装置 |
| JP5617829B2 (ja) * | 2011-05-31 | 2014-11-05 | 株式会社村田製作所 | コモンモードチョークコイルおよび高周波部品 |
| JP5714455B2 (ja) | 2011-08-31 | 2015-05-07 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| KR20150096391A (ko) * | 2012-12-19 | 2015-08-24 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체장치 |
| JP6395304B2 (ja) * | 2013-11-13 | 2018-09-26 | ローム株式会社 | 半導体装置および半導体モジュール |
| JP2016127162A (ja) * | 2015-01-05 | 2016-07-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2018011173A (ja) * | 2016-07-13 | 2018-01-18 | 三菱電機株式会社 | デジタルアイソレータ |
| JP6909995B2 (ja) * | 2017-06-27 | 2021-07-28 | パナソニックIpマネジメント株式会社 | アイソレータ |
| JP7023814B2 (ja) * | 2018-08-29 | 2022-02-22 | 株式会社東芝 | アイソレータ及び通信システム |
| JP7686394B2 (ja) * | 2020-12-24 | 2025-06-02 | ローム株式会社 | ゲートドライバ |
| JP7749398B2 (ja) | 2021-09-30 | 2025-10-06 | 大和ハウス工業株式会社 | 梁接合構造及び鉄骨造建物 |
-
2022
- 2022-08-08 CN CN202280058278.7A patent/CN117897814A/zh active Pending
- 2022-08-08 JP JP2023545399A patent/JPWO2023032612A1/ja active Pending
- 2022-08-08 WO PCT/JP2022/030341 patent/WO2023032612A1/ja not_active Ceased
- 2022-08-08 DE DE112022004242.7T patent/DE112022004242T5/de active Pending
-
2024
- 2024-02-15 US US18/443,036 patent/US20240186310A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20240186310A1 (en) | 2024-06-06 |
| DE112022004242T5 (de) | 2024-07-04 |
| WO2023032612A1 (ja) | 2023-03-09 |
| JPWO2023032612A1 (https=) | 2023-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8592944B2 (en) | Semiconductor electronic device with an integrated device with an integrated galvanic isolator element and related assembly process | |
| US9589887B2 (en) | Semiconductor device | |
| US9431379B2 (en) | Signal transmission arrangement | |
| JP2013538442A (ja) | ガルバニック絶縁変圧器 | |
| CN115004364A (zh) | 具有加强隔离的多芯片封装 | |
| US20240186310A1 (en) | Signal transmission device and insulation chip | |
| US20250014799A1 (en) | Insulating chip and signal transmission device | |
| US20240313043A1 (en) | Insulation chip and signal transmission device | |
| US20240420884A1 (en) | Insulated chip and signal transmitting device | |
| US20250372506A1 (en) | Isolation circuitry on semiconductor die | |
| CN117981081A (zh) | 信号传输装置和绝缘芯片 | |
| CN117242571A (zh) | 信号传递装置及绝缘模块 | |
| US20240332259A1 (en) | Insulation chip and signal transmission device | |
| US20250070103A1 (en) | Semiconductor device | |
| US20240332171A1 (en) | Insulation chip and signal transmission device | |
| US20240332345A1 (en) | Insulating chip and signal propagating device | |
| JP2025021948A (ja) | 絶縁チップおよび半導体装置 | |
| JP2025030525A (ja) | 半導体装置 | |
| CN100539120C (zh) | 半导体器件 | |
| US20250379144A1 (en) | Insulating chip and signal transmission device | |
| US20250309178A1 (en) | Semiconductor device | |
| WO2024043105A1 (ja) | トランスチップ、信号伝達装置 | |
| CN118901137A (zh) | 绝缘芯片及信号传递装置 | |
| JP2025030874A (ja) | 絶縁チップおよび信号伝達装置 | |
| WO2025094846A1 (ja) | 半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |