CN117795423A - 曝光装置、组件制造方法及平面显示器的制造方法 - Google Patents

曝光装置、组件制造方法及平面显示器的制造方法 Download PDF

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Publication number
CN117795423A
CN117795423A CN202280043478.5A CN202280043478A CN117795423A CN 117795423 A CN117795423 A CN 117795423A CN 202280043478 A CN202280043478 A CN 202280043478A CN 117795423 A CN117795423 A CN 117795423A
Authority
CN
China
Prior art keywords
exposure
pattern
substrate
optical system
light modulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280043478.5A
Other languages
English (en)
Chinese (zh)
Inventor
加藤正纪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN117795423A publication Critical patent/CN117795423A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
CN202280043478.5A 2021-07-05 2022-07-01 曝光装置、组件制造方法及平面显示器的制造方法 Pending CN117795423A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021111777 2021-07-05
JP2021-111777 2021-07-05
PCT/JP2022/026497 WO2023282211A1 (ja) 2021-07-05 2022-07-01 露光装置、デバイス製造方法およびフラットパネルディスプレイの製造方法

Publications (1)

Publication Number Publication Date
CN117795423A true CN117795423A (zh) 2024-03-29

Family

ID=84800651

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280043478.5A Pending CN117795423A (zh) 2021-07-05 2022-07-01 曝光装置、组件制造方法及平面显示器的制造方法

Country Status (5)

Country Link
JP (1) JP7700860B2 (https=)
KR (1) KR20240019240A (https=)
CN (1) CN117795423A (https=)
TW (1) TW202309672A (https=)
WO (1) WO2023282211A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118732416A (zh) * 2024-07-26 2024-10-01 东莞市桓灿微纳米科技有限公司 自动uv曝光拼模设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000267294A (ja) * 1999-03-12 2000-09-29 Orc Mfg Co Ltd 露光装置
JP2005266779A (ja) * 2004-02-18 2005-09-29 Fuji Photo Film Co Ltd 露光装置及び方法
JP2018060001A (ja) * 2016-10-04 2018-04-12 東京エレクトロン株式会社 補助露光装置及び露光量分布取得方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118732416A (zh) * 2024-07-26 2024-10-01 东莞市桓灿微纳米科技有限公司 自动uv曝光拼模设备

Also Published As

Publication number Publication date
JP7700860B2 (ja) 2025-07-01
TW202309672A (zh) 2023-03-01
WO2023282211A1 (ja) 2023-01-12
JPWO2023282211A1 (https=) 2023-01-12
KR20240019240A (ko) 2024-02-14

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