CN117795423A

CN117795423A - Exposure apparatus, device manufacturing method, and flat panel display manufacturing method

Info

Publication number: CN117795423A
Application number: CN202280043478.5A
Authority: CN
Inventors: 加藤正纪
Original assignee: Nikon Corp
Current assignee: Nikon Corp
Priority date: 2021-07-05
Filing date: 2022-07-01
Publication date: 2024-03-29
Also published as: WO2023282211A1; JPWO2023282211A1; TW202309672A; KR20240019240A

Abstract

An exposure device (1) of the present invention exposes a substrate (10) having a first exposure pattern (85) formed by splicing a part of a first exposure portion (85A) and a part of a second exposure portion (85B) by moving the substrate along a scanning direction, and simultaneously, overlaps a second exposure pattern (90) with the first exposure pattern (85), and comprises a plurality of exposure modules for dividing and exposing the second exposure pattern (90), wherein the plurality of exposure modules comprise: a spatial light modulator having a plurality of components and controlling the plurality of components according to a second exposure pattern (90); an illumination optical system that illuminates the spatial light modulator; and a projection optical system (84) for projecting an image of the spatial light modulator controlled by the second exposure pattern (90) onto the substrate (10), wherein at least one of the plurality of exposure modules exposes a splice (85C) formed by splicing a part of the first exposure section (85A) and a part of the second exposure section (85B).

Description

Exposure apparatus, device manufacturing method, and flat panel display manufacturing method

Technical Field

The invention relates to an exposure device, a component manufacturing method and a flat panel display manufacturing method.

The present case claims priority based on japanese patent application No. 2021-111777 filed on 5, 7, 2021, and the contents of which are incorporated herein by reference.

Background

Conventionally, as an exposure apparatus that irradiates illumination light to a substrate via an optical system, the following exposure apparatus is known: the light modulated by the spatial light modulator is passed through a projection optical system, and an image formed by the light is formed on a resist coated on a substrate to be exposed (for example, refer to patent document 1).

[ Prior Art literature ]

[ patent literature ]

[ patent document 1] Japanese patent laid-open No. 2005-266779

Disclosure of Invention

An aspect of the present invention is an exposure apparatus for exposing a substrate having a first exposure pattern formed by splicing a part of a first exposure portion and a part of a second exposure portion, while moving the substrate in a scanning direction, and overlapping the second exposure pattern with the first exposure pattern, the exposure apparatus including a plurality of exposure modules for dividing and exposing the second exposure pattern, the plurality of exposure modules including: a spatial light modulator having a plurality of components and controlling the plurality of components according to the second exposure pattern; an illumination optical system for illuminating the spatial light modulator; and a projection optical system for projecting an image of the spatial light modulator controlled in accordance with the second exposure pattern onto the substrate, wherein at least one of the plurality of exposure modules exposes a spliced portion formed by splicing a part of the first exposure portion and a part of the second exposure portion.

Another aspect of the present invention is an exposure apparatus for exposing a substrate exposed with a first exposure pattern while moving the substrate in a scanning direction, the exposure apparatus including: a plurality of exposure modules for dividing and exposing the second exposure pattern; a detection unit configured to detect a predetermined region having an exposure state different from that of the other region in the first exposure pattern; and an adjusting unit configured to adjust the exposure modules based on a detection result of the detecting unit, the plurality of exposure modules including: a spatial light modulator having a plurality of components and controlling the plurality of components according to the second exposure pattern; an illumination optical system for illuminating the spatial light modulator; and a projection optical system for projecting an image of the spatial light modulator controlled in accordance with the second exposure pattern onto the substrate, wherein the image is exposed on the predetermined area by at least one of the plurality of exposure modules adjusted by the adjusting unit.

Another aspect of the present invention is an exposure apparatus for exposing a first exposure pattern while moving a substrate in a scanning direction, the exposure apparatus including: an exposure module having: a spatial light modulator having a plurality of components and controlling the plurality of components according to the first exposure pattern; an illumination optical system for illuminating the spatial light modulator; and a projection optical system for projecting an image of the spatial light modulator controlled according to the first exposure pattern onto the substrate; a receiving unit configured to receive information related to another exposure apparatus that exposes the substrate with the first exposure pattern and that exposes the second exposure pattern to the first exposure pattern, before exposing the first exposure pattern to the substrate; and an adjusting unit configured to adjust the exposure module based on the information received by the receiving unit.

One aspect of the invention includes: exposing the substrate with the exposure device; and developing the exposed substrate.

One aspect of the invention includes: exposing the substrate for the flat panel display by using the exposure device; and developing the exposed substrate.

One aspect of the present invention is a device manufacturing method for performing overlay exposure of patterns of different layers of an electronic device on a substrate using a first exposure apparatus for exposing the substrate by projecting a fixed pattern on a photomask and a second exposure apparatus for exposing the substrate by projecting a variable pattern formed by a spatial light modulator, comprising: a first step of, when a size of a first projection area of the first exposure apparatus is smaller than a size of the electronic component to be formed on the substrate, performing a splice exposure of a projection image of the fixed pattern which appears in the first projection area due to movement of the substrate, thereby forming a first layer of the electronic component; and a second step of forming a second layer of the electronic component by performing a joint exposure of the projection images of the variable pattern projected onto the substrate from each of the plurality of exposure modules in a second projection region having a size smaller than the first projection region, wherein, when the second step is performed after the first step, the position of the projection image of the variable pattern from each of the plurality of exposure modules is corrected based on the joint error generated in the first step in the second step, and when the first step is performed after the second step, the position of the projection image of the variable pattern from each of the plurality of exposure modules is corrected based on the predicted joint error possibly generated in the first step in the second step.

Drawings

Fig. 1 is a perspective view showing an example of an exposure apparatus according to the present embodiment.

Fig. 2 is a diagram showing a configuration of the exposure unit.

Fig. 3 is a diagram showing a configuration of the exposure module.

Fig. 4 is a perspective view showing an on/off operation of the spatial light modulator.

Fig. 5 is a perspective view showing the operation of the components of the spatial light modulator.

Fig. 6 is a side view schematically showing the configuration of the first alignment measurement system provided on the substrate stage.

Fig. 7 is a perspective view showing a schematic configuration of an exposure apparatus for performing exposure using a photomask.

Fig. 8 is a plan view showing a scanning layout of a substrate by an exposure apparatus that performs exposure using a photomask.

Fig. 9 is a plan view showing a scanning layout of a substrate by a maskless exposure device.

Fig. 10 is an explanatory view showing a state of a spliced portion of an exposure image formed on a substrate by an exposure apparatus that performs exposure using a photomask.

Fig. 11 is an explanatory diagram showing a relationship between a first exposure pattern and a second exposure pattern of an exposure apparatus without a mask, which is caused by an exposure apparatus that performs exposure using a photomask.

Fig. 12 is an explanatory diagram showing a relationship between a first exposure pattern and an alignment mark formed on the periphery thereof, which is caused by an exposure apparatus that performs exposure using a photomask.

Fig. 13 is an explanatory view showing an alignment mark formed on the periphery of a substrate.

Fig. 14 is a front view showing an example of an exposure apparatus for performing exposure using a photomask according to modification 1.

Fig. 15 is an explanatory diagram showing a positional relationship of alignment marks in the exposure apparatus of modification 2 that uses a photomask for exposure.

Detailed Description

Hereinafter, embodiments will be described in detail with reference to the drawings.

Fig. 1 is a perspective view showing an example of an exposure apparatus 1 according to the present embodiment.

The exposure apparatus 1 is an apparatus that exposes a substrate 10 via an optical system. The exposure device 1 causes light modulated by a spatial light modulator 75 (see fig. 2) to pass through a projection optical system 7B, and forms an image formed by the light on a photosensitive material (resist) to perform exposure. At this time, the spatial light modulator 75 and the substrate 10 are disposed in an optically conjugate relationship via the projection optical system 7B. The substrate 10 is, for example, a glass substrate for a display having a photoresist coated on the surface thereof.

As shown in fig. 1, the exposure apparatus 1 includes a substrate stage 4 for supporting a substrate 10, an exposure apparatus main body 2 for performing scanning exposure of a predetermined exposure pattern on the substrate 10, a substrate replacement section 3 for transferring and placing the substrate 10 onto the substrate stage 4, and a control system 9 for controlling the same.

Here, the direction in which the substrate stage 4 is moved when scanning exposure is performed on the substrate 10 is denoted as the X direction (first direction). The direction orthogonal (intersecting) to the first direction is set as the Y direction (second direction). The direction orthogonal to the X direction and the Y direction is referred to as the Z direction (third direction).

The substrate stage 4 holds a substrate 10 having a rectangular shape in plan view. The substrate stage 4 moves in the X direction with respect to the exposure apparatus main body 2 during scanning exposure. The X-direction is also referred to as the scan direction. In order to expose a plurality of exposure regions on the substrate 10, the substrate stage 4 is moved in the Y direction. The Y direction is also referred to as the non-scanning direction.

The exposure apparatus main body 2 includes a light source unit 6, an exposure unit 20, and an optical platen 21. The exposure unit 20 includes a plurality of exposure modules 7. The exposure module 7 incorporates a space light modulator 75 (see fig. 2), and irradiates light with a preset exposure pattern by supplying light from the light source 61.

The light source unit 6 supplies light to a plurality of exposure modules 7. As the light source unit 6, a light source unit using a laser with high interference as the light source 61, a light source unit using a light source 61 such as a semiconductor laser type UV-LD, a light source unit using a lens relay type retarder, and the like can be used. The light source 61 is, for example, a lamp or a laser diode emitting light with a wavelength of 405nm or 365 nm.

The exposure unit 20 is mounted on an optical platen 21. The optical platen 21 is supported kinematically at 3 points with respect to a column 22 provided so as to extend across the bottom plate 11 on which the substrate stage 4 is mounted in the X direction. The optical platen 21 is disposed such that the center of gravity is located substantially at the center portion of the base plate 11 in the X direction.

The column 22 has a pair of cross members 221 extending in the Y direction, and leg portions 222 extending downward from both ends of the cross members 221 and connected to the bottom plate 11. Further, since the leg 222 is loaded with a load mounted on the optical platen 21, a vibration isolation table (not shown) may be disposed at a joint portion between the bottom plate 11 and the leg 222. 3V grooves are formed at appropriate positions on the upper surface of the cross frame 221. The optical platen 21 is placed in the V-grooves on the pair of cross members 221 via a 3-point ball with the upper surface 21a facing in the horizontal direction.

In addition to the exposure module 7, as shown in fig. 2 described below, an autofocus system 23 and a second alignment measurement system 5B of the measurement system 5 are mounted on the optical platen 21. In order to guide the light to be exposed to the substrate 10, the optical platen 21 is provided with a plurality of first through holes 21b penetrating in the thickness direction. The method of fixing the optical platen 21 to the column 22 is not particularly limited as long as the rigidity can be ensured.

As shown in fig. 1, the base plate 11 is provided on the ground via a plurality of vibration isolation tables 111. The bottom plate 11 is a base plate extending in the X direction, and the substrate stage 4 is mounted on the upper surface 11a thereof. A guide (not shown) for guiding the substrate stage 4 in the X direction is provided on the upper surface 11a of the bottom plate 11.

The substrate stage 4 is used to position the substrate 10 with high accuracy with respect to the exposure pattern projected via the projection optical system 7B of the exposure module 7. The substrate stage 4 is driven with 6 degrees of freedom (X, Y, Z and θx, θy, and θz directions rotating further around the respective axes of the X, Y, and Z directions).

The substrate stage 4 is formed in a flat plate shape, and holds the substrate 10 by suction on its upper surface 4a by a vacuum suction method or the like. The substrate stage 4 is guided by a guide, not shown, on the bottom plate 11, and moves in the X direction, the Y direction, or the like. As the moving mechanism of the substrate stage 4, for example, a linear motor system or the like that floats the substrate stage 4 by air and moves it by magnetic force can be used. The position of the substrate stage 4 is measured by an interferometer 53 shown in fig. 2 or an encoder not shown, and is controlled by the control system 9.

The movement path of the substrate stage 4 is set so as to pass below the exposure unit 20.

That is, the substrate stage 4 is configured to pass through the exposure position of the light that is carried to the exposure unit 20. In the process of passing the substrate stage 4 through the exposure unit 20, an exposure pattern of an image formed by the exposure unit 20 is exposed to the substrate 10.

A plurality of replacement pins (not shown) for replacing the substrate 10 are provided on the upper surface 4a of the substrate stage 4 so as to be capable of moving in the up-down direction (Z direction). The replacement pins are arranged at predetermined intervals along the X-direction and the Y-direction in the region where the substrate 10 is disposed on the upper surface 4a of the substrate stage 4.

When the replacement pins protrude upward, the lower surface of the substrate 10 is supported by the pin tips. That is, by setting the replacement pins up and down, the substrate 10 can be lifted up and down. The protruding length of the replacement pins from the upper surface 4a is set to be at least a length that allows the substrate support portion 31 of the replacement arm 3A shown in fig. 1 to move in and out with respect to the lower side of the ascending substrate 10.

The substrate replacing unit 3 carries the exposed substrate 10 on the substrate stage 4 to the outside of the substrate stage 4, and carries the substrate 10 subjected to the exposure thereafter onto the substrate stage 4 from which the exposed substrate 10 has been carried out. The substrate replacing section 3 includes a replacing arm 3A for replacing the substrate 10 on the substrate stage 4. The substrate replacing section 3 includes, as a replacing arm 3A, a carry-in arm for carrying the substrate 10 into the substrate stage 4 and a carry-out arm for carrying out the substrate 10.

The replacement arm 3A has a substrate support portion 31 at the arm tip. The replacement arm 3A is provided so as to be movable in the X direction, the Y direction, and the Z direction. The replacement arm 3A performs the following operations: the substrate support 31 is moved in the Y direction to enter the lower side of the substrate 10 and then is lifted up, thereby supporting the substrate 10 from the lower side and then is moved in the Y direction in a direction separating from the substrate stage 4, thereby taking out the substrate 10 from the substrate stage 4.

The substrate 10 is coated with a photosensitive resist and carried into the exposure apparatus 1, and is placed on a plurality of replacement pins provided on the substrate stage 4 by the replacement arm 3A. Then, the substrate 10 is sucked and held by the substrate holder on the substrate stage 4 by lowering the replacement pins.

Fig. 2 is a diagram showing the configuration of the exposure unit 20.

As shown in fig. 2, the exposure unit 20 includes a plurality of exposure modules 7, and the exposure modules 7 include an illumination optical system 7A, a projection optical system 7B, and a modulation unit 7C.

As shown in fig. 1, the exposure modules 7 are arranged at predetermined intervals along the Y direction to form module rows. The module rows of the exposure module 7 are formed in a plurality of rows (4 rows in fig. 1) at intervals along the X direction. The exposure modules 7 of the module rows are arranged offset in the Y direction.

As shown in fig. 2, the illumination optical system 7A is disposed in a one-to-one relationship with the projection optical system 7B. That is, the illumination optical system 7A and the projection optical system 7B are provided in the same number. The illumination optical system 7A makes the output light outputted from the light source 61 of the light source unit 6 shown in fig. 1 substantially uniformly incident on the spatial light modulator 75 as illumination light for exposure.

Fig. 3 is a diagram showing the configuration of the exposure module 7.

As shown in fig. 3, the illumination optical system 7A includes an optical fiber 71, a collimator lens 721, a wedge-shaped illumination 722, a fly-eye lens 723, a main condenser lens 724, and a mirror 725.

For example, quartz fiber is used as the optical fiber 71. The output light (laser light L) from the light source 61 is guided by the optical fiber 71 and enters the collimator lens 721. The collimator lens 721 converts the light emitted and diffused from the optical fiber 71 into parallel light and emits the parallel light. Wedge illumination 722 adjusts the intensity (power) of light emitted from optical fiber 71.

The light passing through the collimator lens 721 passes through the fly-eye lens 723 and the main condenser lens 724, and then is reflected by the mirror 725, and is incident on the spatial light modulator 75 at a predetermined reflection angle. Further, it is also possible to consider that the spatial light modulator 75 is illuminated by both the illumination optical system 7A and the light source unit 6, and both are combined and expressed as an illumination optical system.

In the illumination optical system 7A, a module shutter 73 is disposed between the optical fiber 71 and the collimator lens 721. The module shutter 73 can be opened (opened)/closed (shielded) at a high speed with respect to the illumination optical system 7A and the projection optical system 7B, respectively, with respect to the laser light L emitted from the optical fiber 71.

The modulator 7C modulates illumination light to create a pattern (variable pattern), and includes a spatial light modulator 75 and an OFF-state (OFF) light absorbing plate 74. The spatial light modulator 75 uses a digital mirror assembly as an example. The spatial light modulator 75 includes a plurality of components (mirror surfaces in the digital mirror component). The entire reflection surface of the spatial light modulator 75 is disposed so as to be orthogonal to the optical axis of the projection optical system 7B and so as to be parallel to the XY plane in the apparatus. Therefore, the angle formed by the optical axis of the main condenser lens 724 bent by the mirror 725 and the optical axis of the projection optical system 7B becomes an incident angle for obliquely illuminating the spatial light modulator 75. The incidence angle is set to be approximately 2 times the tilt angle when each mirror surface of the digital mirror assembly is driven.

Fig. 4 is a perspective view showing the on/off operation of the spatial light modulator 75.

As shown in fig. 4, each component of the spatial light modulator 75 is capable of rotation about the X axis and rotation about the Y axis.

Fig. 5 is a perspective view showing the operation of the components of the spatial light modulator 75.

Fig. 5 (a) shows the operation of the components in a state where the spatial light modulator 75 is not powered on. In the state shown in fig. 5 (a), the component does not rotate about either the X-axis or the Y-axis.

Fig. 5 (B) shows an on state in which the spatial light modulator 75 is turned on, and the component is rotated and tilted about the Y axis and reflects light incident from the illumination optical system 7A toward the projection optical system 7B.

Fig. 5 (C) shows a state in which the spatial light modulator 75 is turned on, and shows an off state in which the component is tilted rotationally about the X-axis, so that light from the illumination optical system 7A is reflected toward the off-state light absorbing plate 74 as indicated by symbol L2 in fig. 3, instead of the projection optical system 7B.

As described above, the spatial light modulator 75 can form a pattern (variable pattern) by controlling the on state and the off state of each component for each component based on the control data.

The spatial light modulator 75 may periodically drive the components while the pattern (variable pattern) on the spatial light modulator 75 is periodically updated. The light source 61 needs to illuminate the spatial light modulator 75 in the update period of each pattern, and thus is preferably a light source that emits pulses in a predetermined period or can emit pulses in a predetermined period. In this case, the light source 61 may be configured to emit continuous light, and the continuous light may be converted into pulse light by switching a shutter (not shown), modulating the pulse light by an audio optical modulator (not shown), or the like, thereby making the light emitted from the light source 61 substantially pulse light.

The spatial light modulator 75 is mounted on a stage (not shown) and slightly moves in the X direction and/or the Y direction in a state of being mounted on the stage (see fig. 3). As a result, the spatial light modulator 75 is movable with respect to the illumination light, and changes the position of the projected image of the pattern on the substrate 10, for example, corrects the deviation of the projected position with respect to the target value.

As shown in fig. 2, the projection optical system 7B is supported by the optical platen 21 and is disposed below the spatial light modulator 75. The projection optical system 7B projects an image of the pattern formed on the spatial light modulator 75 onto the substrate 10 and exposes the image. As shown in fig. 3, the projection optical system 7B includes a magnification adjustment unit 76 for projecting a 1-pixel adjustment magnification of the spatial light modulator 75 by a predetermined size, and a focus adjustment unit 77 for adjusting focus by driving the lens in the Z direction.

The magnification adjustment unit 76 includes a magnification adjustment lens 761 that reduces the image from the spatial light modulator 75 from, for example, 1/2 to 1/10 and projects the image onto the focus adjustment unit 77. The magnification adjustment unit 76 can make a plurality of corrections to the projection magnification by driving the magnification adjustment lens 761 in the Z direction. The projection magnification is not limited to reduction, but may be enlarged or equalized.

The focus adjustment unit 77 includes a plurality of focus lenses 771, and the plurality of focus lenses 771 condense the reflected light from the spatial light modulator 75 (the reflected light from the mirror surface in the on state) passing through the magnification adjustment unit 76 and form an optical image corresponding to the distribution of the mirror surfaces in the on state on the substrate surface 10a as the focal plane.

As shown in fig. 2, an autofocus system 23 is disposed on both sides of the optical platen 21 across the projection optical system 7B in the X direction. The autofocus system 23 can measure the Z-direction position of the substrate 10 before the exposure process, regardless of the scanning direction (X-direction) of the substrate 10. The focus adjustment unit 77 drives the focus lens 771 based on the measurement result of the autofocus system 23, and adjusts the focus of the pattern image of the spatial light modulator 75.

Fig. 6 is a side view showing a schematic configuration of the first alignment measurement system 5A provided on the substrate stage 4.

As shown in fig. 6, the measurement system 5 includes a first alignment measurement system 5A provided on the substrate stage 4, and a second alignment measurement system 5B provided on the optical platen 21 as shown in fig. 2.

As shown in fig. 6, the first alignment measurement system 5A is buried in a predetermined position of the substrate stage 4. The first alignment measurement system 5A measures the position of the substrate 10 adsorbed by a holder, not shown, with respect to the substrate stage 4. The first alignment measurement system 5A is disposed at least at four corners of the substrate stage 4. Through holes 42 penetrating in the thickness direction of the stage are provided at four corners of the substrate stage 4 where the first alignment measurement system 5A is provided.

The first alignment measurement system 5A includes a lens 511 disposed in the through hole 42 of the substrate stage 4, a light source 513 such as an LED that irradiates non-photosensitive light toward the alignment mark 12 of the substrate 10 placed at a predetermined position on the substrate stage 4 with the measurement light, which is disposed below the lens 511, and a measurement unit 512 that detects the light reflected by the alignment mark 12.

In the first alignment measurement system 5A, when the substrate 10 is mounted on the substrate stage 4, for example, the positions of four corners of the substrate 10 are measured, and 6 parameters (positional information) including the X-direction position, the Y-direction position, the rotation amount (angle in the θz direction), the reduction/magnification in the X-direction, the reduction/magnification in the Y-direction, and the orthogonality are measured.

The arrangement of the first alignment measurement system 5A on the substrate stage 4 is not limited to four corners as described above. For example, in the case where the substrate 10 is formed by a process such as a nonlinear shape, the first alignment measurement system 5A is arranged in an amount corresponding to 4×4 columns.

The first alignment measurement system 5A is an off-axis alignment measurement system. The first alignment measurement system 5A measures the alignment mark 12 of the substrate 10 with reference to pixels such as a CCD or CMOS provided in the measurement unit 512.

As shown in fig. 2, the substrate stage 4 includes a calibration measurement system 52, an interferometer 53 for measuring the position of the substrate stage 4, and an illuminance meter 54. The correction measurement system 52, the interferometer 53, and the illuminance meter 54 are obtaining units that obtain information on the light of the exposure unit 20 during or before exposure of the substrate 10.

The calibration measurement system 52 is used for measuring and calibrating the positions of various modules. The calibration measurement system 52 is also used for calibrating the second alignment measurement system 5B disposed on the optical platen 21.

As described above, in the exposure apparatus 1 according to the present embodiment, the first alignment measurement system 5A in the substrate stage 4 can measure the position of the first alignment measurement system 5A relative to the imaging system on the substrate stage 4 from the position of the interferometer 53 that measures the position of the substrate stage 4 and the image position of the second alignment measurement system 5B by measuring the imaging position of the pattern generated by the spatial light modulator 75 that performs exposure.

As shown in fig. 2, a second alignment measurement system 5B is disposed above the substrate stage 4 of the optical platen 21. The second alignment measurement system 5B measures the position of the substrate 10 adsorbed by a holder, not shown, with respect to the substrate stage 4.

The second alignment measurement system 5B includes a lens 551 disposed below the optical platen 21, a photosensor 552 disposed above the lens 551 and configured to irradiate non-photosensitive measurement light onto the alignment mark 12 of the substrate 10 placed at a predetermined position on the substrate stage 4, and a measurement unit, not shown, configured to detect light reflected by the alignment mark 12.

The second alignment measurement system 5B measures 6 parameters (positional information) of the X-direction position, the Y-direction position, the rotation amount (angle in the θz direction), the reduction/magnification in the X-direction, the reduction/magnification in the Y-direction, and the orthogonality of the substrate 10 when the substrate 10 is mounted on the substrate stage 4, similarly to the first alignment measurement system 5A.

The second alignment measurement system 5B is provided on the optical platen 21 so as to be separated from the illumination optical system 7A in the X direction. The substrate stage 4 moves the alignment mark 12 on the substrate 10 to a position where the second alignment measurement system 5B can measure. By driving the substrate stage 4, the second alignment measurement system 5B can measure the alignment mark 12 disposed on the substrate 10, and thus can measure the entire surface of the substrate 10.

A method of exposing the substrate 10 in the exposure apparatus 1 having the above-described configuration will be described.

First, when a recipe for exposure is input to the exposure apparatus 1, the control system 9 shown in fig. 1 selects mask data for exposure from the mask pattern server. Then, the control system 9 divides the mask data into the number of exposure modules 7, generates divided mask data, and stores the divided mask data in the memory.

At this time, the spatial light modulator 75 updates the 4m pixel at an update rate of, for example, approximately 10kHz, so that the memory stores a large amount of mask data at a high speed. The control system 9 transmits the mask data stored in the memory to each of the plurality of exposure modules 7. The exposure module 7 receives the mask data and performs various exposure preparations. That is, the exposure module 7 loads the received mask data to the spatial light modulator 75.

Then, the exposure apparatus 1 measures and corrects illuminance (information of light) according to the recipe.

For example, the illuminance measuring device 54 disposed on the substrate stage 4 measures illuminance of light from the illuminance measuring pattern generated on the spatial light modulator 75. The exposure device 1 uses each of the plurality of exposure modules 7, and uses the measurement result of the measured illuminance to adjust the illuminance by the wedge illumination 722 disposed in the illumination optical system 7A so that there is no illuminance difference between the exposure modules 7.

Then, as shown in fig. 2, the exposure apparatus 1 measures exposure positions of the illumination optical system 7A and the projection optical system 7B and the second alignment measurement system 5B disposed on the optical platen 21 by the correction measurement system 52. That is, the correction measurement system 52 measures the positions of the second alignment measurement system 5B (microscope) and the arrangement of the illumination optical system 7A and the projection optical system 7B, and calculates the relative positional relationship between the illumination optical system 7A and the projection optical system 7B and the second alignment measurement system 5B (microscope).

The position of the first alignment measurement system 5A provided on the substrate stage 4 is measured with reference to the pixels of the camera of the measurement unit 512 shown in fig. 6. The first alignment measurement system 5A performs measurement using an exposure pattern (for example, a pattern for test) of the spatial light modulator 75 projected by the projection optical system 7B.

Based on the measurement results, the exposure apparatus 1 calculates the relative positional relationship between the illumination optical system 7A and the projection optical system 7B and the first alignment measurement system 5A.

Then, as shown in fig. 6, the substrate replacement section 3 mounts the substrate 10 for exposure on the substrate stage 4. At this time, the first alignment measurement system 5A observes and measures the alignment mark 12 of the substrate 10, and calculates the relative position of the first alignment measurement system 5A with respect to the substrate 10 with respect to the device.

Or the substrate stage 4 moves downward of the second alignment measurement system 5B, and the second alignment measurement system 5B observes and measures the alignment mark 12 of the substrate 10, and calculates the relative position of the second alignment measurement system 5B with respect to the substrate 10 with respect to the device.

By this means, the exposure pattern, i.e., the projection position, at the position on the substrate 10 can be known based on the relative positional relationship between the illumination optical system 7A and the projection optical system 7B and the alignment measurement system, which are calculated in advance, and the relative position of the alignment measurement system with respect to the substrate 10.

By this operation, the amount of shift between the position to be exposed on the recipe and the position to be exposed on the substrate 10 according to the current arrangement relationship between the substrate 10 and the projection optical system 7B can be known. In the present embodiment, the control system 9 corrects the exposure data in order to correct the offset amount. The control system 9 may move the substrate stage 4 itself, reduce the offset, and generate correction data instead of performing correction using only the exposure data. In this case, the correction amount by which the data is corrected by the control system 9 can be reduced.

Furthermore, the control system 9 can also move the spatial light modulator 75 to change the exposure position on the substrate 10. The control system 9 corrects the offset by the data correction and the movement of the substrate stage 4, corrects the offset by the data correction and the movement of the spatial light modulator 75, and corrects the offset by a combination of the data correction, the movement of the substrate stage 4, and the movement of the spatial light modulator 75.

In the exposure apparatus 1, a correction value may be calculated for each panel of the liquid crystal television or the like with respect to the substrate 10, and the correction value of the substrate stage 4 may be obtained. In the case of locally correcting the substrate 10 in the above-described manner, most cases are that the correction values of the illumination optical system 7A and the projection optical system 7B are different, and the correction values are calculated for the illumination optical system 7A and the projection optical system 7B, respectively, to correct the digital exposure data of the exposure.

The control system 9 includes a control unit that is connected to each part of the exposure apparatus 1 (the measurement system 5, the substrate stage 4, and the optical systems (the illumination optical system 7A, the projection optical system 7B, and the modulation unit 7C)) and transmits and receives measurement values, commands for controlling each part of the exposure apparatus 1, and the like.

The control system 9 further includes a data generation unit that generates digital exposure data (control data) for driving the spatial light modulator 75.

The control unit has a function of correcting the digital exposure data based on the measurement result of the measurement system 5. Correction data of the digital exposure data is stored in the memory of the control system 9. The control system 9 is incorporated in a computer or the like, for example. The exposure apparatus 1 performs overlay exposure on the substrate 10 on the substrate stage 4 based on correction data of the digital exposure data and recipe information transmitted from the control system 9.

In addition, in the operation of correcting the data on the substrate stage 4, calibration or the like may be performed during the correction of the data. The control system 9 may use, for example, information of light such as illuminance measured by the illuminance measuring device 54 or the correction measuring system 52 provided on the substrate stage 4 during exposure as correction data, and adjust the illuminance of the exposure module 7 based on the correction data. The information of the light at this time is transmitted to the exposure module 7 before the data correction of the substrate stage 4 is started. The information of the light may be transmitted to the exposure module 7 during the data correction in the substrate stage 4.

In the exposure apparatus 1, measurement related to exposure position and data correction is performed in advance based on arrangement measurement of the plurality of illumination optical systems 7A and projection optical systems 7B, and then illuminance measurement, correction of curvature (straightness) of a not-shown movable mirror provided on the substrate stage 4, and the like are performed, whereby calculation of correction value of data and transmission of correction data are performed in the exposure operation. Thereby, data considering alignment of the substrate 10 or arrangement of the modules can be transmitted without affecting productivity.

A predetermined exposure pattern is formed on the substrate 10 exposed by the exposure apparatus 1. That is, the exposure apparatus 1 performs exposure (hereinafter referred to as 2nd exposure) 2nd after the substrate 10. In the present embodiment, the 1st exposure (hereinafter referred to as 1st exposure) is performed by the exposure apparatus 8 for performing exposure using a photomask shown in fig. 7. That is, the maskless exposure device 1 using the spatial light modulator 75 supports and moves the substrate 10 subjected to 1st exposure by the exposure device 8 on the substrate stage 4, and performs overlapping exposure to the substrate 10 to be 2nd exposure.

Fig. 7 is a perspective view showing a schematic configuration of the exposure apparatus 8.

As shown in fig. 7, the exposure device 8 exposes a pattern (fixed pattern) formed on a mask M (see fig. 8) on a substrate 10. The exposure apparatus 8 includes a substrate stage 80 that supports and moves the substrate 10, a light source unit 81 that irradiates light, an illumination optical system 82, a mask stage 83 that supports and moves the mask M, and a projection optical system 84.

Fig. 8 is a plan view showing a scanning layout of the substrate 10 by the exposure apparatus 8. As shown in fig. 8, the exposure apparatus 8 exposes the first exposure pattern 85 formed by the projection optical system 84 on the substrate 10 through the mask M. At this time, the mask M and the substrate 10 are disposed in an optically conjugate relationship with each other through the projection optical system 84. The first exposure pattern 85 has first exposure portions 85A as first rows arranged at predetermined intervals along the Y direction, and second exposure portions 85B separated from the first rows in the X direction and arranged at predetermined intervals along the Y direction as second rows.

The first exposure portion 85A and the second exposure portion 85B are each formed in an isosceles trapezoid having 2 sides parallel to the Y direction. The first exposure portion 85A and the second exposure portion 85B are formed in an orientation in which end portions (oblique side portions) adjacent to each other in the Y direction face each other in the X direction. The first exposure portion 85A and the second exposure portion 85B are arranged so that end portions (oblique side portions) adjacent to each other in the Y direction overlap each other in the Y direction.

When the substrate 10 is scanned in the X direction with respect to the first exposure portion 85A and the second exposure portion 85B and exposed (scanning exposure), a joint portion 85C (an area sandwiched by two lines in fig. 8) is formed which is repeatedly exposed (double exposure). As described above, the exposure device 8 splices the first exposure portion 85A and the second exposure portion 85B formed by the projection optical system 84 by the splice portion 85C, thereby exposing the substrate 10 without any gap.

In the exposure apparatus 8, the scanning operation of moving the substrate stage 80 and the mask stage 83 relative to the projection optical system 84 in the X direction and the stepping operation of moving the substrate stage 80 relative to the mask stage 83 in the Y direction or the X direction are repeated, and the entire surface of the substrate 10 is exposed. As shown in fig. 8, the mask M is not limited to 1/4 of the size of the substrate 10. For example, the mask M may be 1/6 times or 1/8 times larger.

Fig. 9 is a plan view showing a scanning layout of the substrate 10 by the maskless exposure device 1.

As shown in fig. 9, the maskless exposure device 1 moves the substrate 10 in the X direction in 4 exposure areas R1 of the substrate 10 exposed with the first exposure pattern 85, and superimposes and exposes the second exposure pattern 90 by the projection optical system 7B. The exposure region R2 of the substrate 10 shown in fig. 9 is a region where the first exposure pattern 85 overlaps the second exposure pattern 90 and is exposed.

In the substrate 10 shown in fig. 9, an exposure region R1 in the right half of the page represents an exposure result of 1st exposure by the exposure device 8, and an exposure region R2 in the left half of the page represents an exposure result of 2nd exposure by the exposure device 1. The exposure device 1 is free from restrictions on the size and the device of the mask M such as the exposure device 8, and can freely layout the second exposure pattern 90. The second exposure pattern 90 exposes the entire surface of the substrate 10 after the end portions of the second exposure pattern 90 adjacent in the Y direction, which is rectangular in plan view.

In the step-and-scan exposure apparatus 8, exposure is performed by moving the mask stage 83 on which the mask M is placed and the substrate stage 80 on which the substrate 10 is placed in synchronization with each other in the X direction (scanning direction). At this time, with the enlargement of the mask M and the substrate 10, it is gradually difficult to control the track of the mask M to coincide with the track of the substrate 10 with high accuracy, and as a result, the track of the mask M and the track of the substrate 10 are offset (conveying error). This conveyance error of the exposure device 8 becomes a factor of causing an offset (splice unevenness) of exposure in the splice portion 85C of the first exposure portion 85A of the first line and the second exposure portion 85B of the second line of the first exposure pattern 85.

Further, as shown in fig. 8 and 9, a slight difference in optical characteristics between the projection optical system 84 for exposing the first exposure portion 85A and the projection optical system 84 for exposing the second exposure portion 85B, mechanical drift or vibration due to a temperature change of each projection optical system 84, and the like may also cause uneven splicing.

The countermeasure will be described below, and the state of occurrence of splice unevenness will be briefly described before.

Fig. 10 is an explanatory view showing a state of a spliced portion of an exposure image formed on a substrate 10 by an exposure device 8. In fig. 10, the state of the exposure device 8 in the spliced portion of the exposure image formed on the substrate 10 by scanning exposure of the linear patterns PM1, PM2, PM3 connected to 1 line in the Y direction on the mask M is exaggerated. Fig. 10 (a) shows the arrangement of the patterns PM1 to PM3, the first exposure portion 85A, and the second exposure portion 85B of the mask M at a certain time during the scanning exposure, and fig. 10 (B) shows the state of each exposure image (resist image) PM1', PM2', PM3' of the patterns PM1 to PM3 exposed on the substrate 10 at that time in a exaggerated manner.

In fig. 10 a, if the first exposure portion 85A and the second exposure portion 85B are respectively formed as projection areas (projection images) 85A, 85B projected onto the substrate 10 via the respective projection optical systems 84, a large amount of stitching error occurs due to a slight shift in the XY direction from a predetermined state in the relative positional relationship of the projection areas 85A, 85B of the stitching exposure along the Y direction. Here, as an example, the projection area 85A is shifted from a predetermined position by Δxd in the X direction and by Δyd in the Y direction.

As described above, if the relative positional shift (Δxd, Δyd) occurs between the 2 projection areas (projection images) 85A, 85B that are spliced, as shown in fig. 10 (B), the exposure images PM1', PM2', PM3 'that are exposed on the projection area 85A side and the exposure images PM1', PM2', PM3' that are exposed on the projection area 85B side are shifted in position, and the images that are shifted in relative position are superimposed and exposed in the spliced portion 85C on the substrate 10, and therefore, a change in line width, a change in pattern center position, or a change in shape occurs. Such a splice error may occur in each of the plurality of splice portions 85C set at intervals along the Y direction.

As described above, in the entire pattern of the first layer (1 st layer) formed on the substrate 10 by the exposure device 8 of the splice exposure method, a splice error (splice unevenness) occurs, and in terms of the angle, it means that a pattern portion having a slight change in position or a pattern portion having a slight change in shape is generated in the entire pattern. When exposing a pattern for a second layer to be superimposed on a first layer by the maskless exposure device 1, pattern data is usually created based on the pattern of the mask M for the first layer.

Therefore, if there is no splice error (splice unevenness) outside the allowable range in the entire pattern of the first layer on the substrate 10, even in the overlap exposure using the maskless exposure device 1 based on the pattern data created for the second layer, if the alignment accuracy or the positional accuracy of the stage is good, a sufficient overlap accuracy can be obtained in any portion of the entire pattern on the substrate 10.

In the following description, the terms "correction of the stitching error (stitching unevenness)" and "stitching error correction" are described, but the meaning of the terms "correction of the stitching error" is also to correct the relative positional deviation error (overlay error) when the exposure of the new pattern to the pattern formed on the substrate 10 is overlapped.

Fig. 11 is an explanatory diagram showing an exaggerated relationship between the first exposure pattern 85 formed by the exposure device 8 and the second exposure pattern 90 of the maskless exposure device 1.

As shown in fig. 11 a, the first exposure pattern 85 has a splice 85C formed by splicing a first exposure portion (projection area) 85A and a second exposure portion (projection area) 85B. The circles shown in fig. 11B indicate the center positions of the projection images of the projection optical system 84 that generate each of the first exposure section (projection area) 85A and the second exposure section (projection area) 85B (i.e., the center coordinates of the exposure modules of the exposure apparatus 8). The circle shown in fig. 11B is a circle in which a splice error occurs, and the position is shifted relative to the X direction (scanning direction). For example, the position between the projection areas 85A and 85B is shifted by Δxd as illustrated in fig. 10.

As shown in fig. 11 (C), the maskless exposure device 1 superimposes and exposes the second exposure pattern 90 on the first exposure pattern 85. The circles shown in fig. 11 (C) indicate the center positions of the projected images of the spatial light modulator 75 projected by the respective projection optical systems 7B of the maskless exposure device 1 that expose the second exposure pattern 90 (i.e., the center coordinates of the respective exposure modules 7 of the maskless exposure device 1). At least one of the pattern images (divided images) of the second exposure pattern 90 exposed by the respective projection optical systems 7B is formed at a position corresponding to the spliced portion 85C of the first exposure pattern 85.

As shown in fig. 11 (C), for example, the pattern image projected by the exposure module 7 in the non-spliced portion in the projection area 85A and the pattern image projected by the exposure module 7 in the non-spliced portion in the projection area 85B are set so as to be shifted by Δxd in the X direction. In the spliced portion 85C, the pattern projected by the exposure module 7 is shifted by Δxd/2 in the X direction from the center of the pattern formed on the substrate 10 as described in fig. 10. Therefore, the position of the projection image from the module 7 exposing the interior of the splice 85C is also corrected by Δxd/2.

As shown in fig. 1, the maskless exposure device 1 includes a plurality of exposure modules 7 juxtaposed in the Y direction. That is, at least one of the plurality of exposure modules 7 is disposed to expose the splice portion 85C. The exposure width 101 in the Y direction of the projection area of the exposure module 7 that exposes the splice portion 85C is smaller than the exposure width 102 of the splice portion 85C. Specifically, the exposure module 7 that exposes the splice portion 85C sets the projection magnification of the projection optical system 7B so that the exposure width 101 is smaller than the exposure width 102 of the splice portion 85C. Thus, the exposure module 7 for exposing the joint portion 85C can expose the second exposure pattern 90 to the joint portion 85C, and correct the uneven joint of the joint portion 85C. That is, the overlay error due to the local relative positional shift caused by the stitching error (stitching unevenness) is corrected in the entire first exposure pattern 85 formed on the substrate 10. The exposure width 101 in the Y direction of each exposure module of the maskless exposure device 1 for exposing the second exposure pattern 90 is smaller than the exposure width 100 in the Y direction of the projection area of one projection optical system 84 of the exposure device 8 for exposing the first exposure pattern 85, excluding the splice portion 85C.

The first exposure pattern 85 has a plurality of splice portions 85C at first intervals P1 in a non-scanning direction (Y direction) orthogonal to the scanning direction (X direction) in the planar direction of the substrate 10. The second exposure pattern 90 has a plurality of divided images of the second exposure pattern 90 at a second interval P2 smaller than the first interval P1 in the same non-scanning direction (Y direction). That is, the plurality of exposure modules 7 are arranged in the non-scanning direction (Y direction) at a second interval P2 smaller than the first interval P1. Further, the second interval P2 is smaller than the exposure width 102 of the splice 85C. The second interval P2 in the present embodiment is 1/2 of the exposure width 102 of the splice 85C, or may be equal to or less than this interval.

The maskless exposure device 1 performs an alignment operation before exposing the second exposure pattern 90.

The alignment action is the following action: before the 2nd exposure, the exposure position of the 2nd exposure is overlapped with the exposure position of the 1st exposure by measuring the position of the 1st exposure through the alignment mark 12. The maskless exposure device 1 corrects the exposure positions of the plurality of exposure modules 7 based on the measurement results of the measurement systems 5 (for example, the first alignment measurement system 5A and the second alignment measurement system 5B).

Fig. 12 is an explanatory diagram showing a relationship between the first exposure pattern 85 formed by the exposure device 8 and the alignment mark 120 formed around the first exposure pattern. Fig. 13 is an explanatory diagram showing the alignment mark 12 formed on the periphery of the substrate 10.

As shown in fig. 6, the alignment marks 12 indicated by circles in fig. 13 are measured by the first alignment measurement system 5A provided on the substrate stage 4, and the relative position of the substrate stage 4 with respect to the substrate 10 is calculated.

As shown in fig. 12 (a), the first exposure pattern 85 has a splice 85C formed by splicing the first exposure portion 85A and the second exposure portion 85B. The alignment mark 120 shown by a circle in fig. 12 (B) is formed in a pair on both sides of each exposure portion simultaneously with the first exposure pattern 85 at the time of 1st exposure. The alignment mark 120 is measured by the second alignment measurement system 5B provided on the optical platen 21, for example.

By measuring the relative coordinates of the alignment marks 120 formed across the respective exposure portions of the first exposure pattern 85, the position in the X direction, the position in the Y direction, the angle θ in the θz direction, the projection magnification β, and the like of the first exposure pattern 85 are calculated, and thereby the correction value of the second exposure pattern 90 of the exposure module 7 can be calculated.

In the example shown in fig. 12 (B), an alignment mark 120 of 1 or more is formed in the joint 85C, so that the position of the joint 85C can be measured.

In the example shown in fig. 12 (C), the alignment mark 120 is not formed in the joint portion 85C, but the position of the joint portion 85C may be estimated from the relative coordinates of the pair of alignment marks 120 formed at each exposed portion of the first exposure pattern 85.

As described above, the maskless exposure device 1 corrects the exposure positions of the plurality of exposure modules 7 based on the measurement results of the measurement systems 5 (for example, the first alignment measurement system 5A and the second alignment measurement system 5B). As one of the correction methods, there is a method of correcting pattern data to be sent to the spatial light modulator 75 based on the measured offset. Specifically, correction for shifting the scanning direction of the pattern data to the +side or correction for shifting the scanning direction to the-side is performed for each spatial light modulator 75.

As another correction method, the following correction may be performed: based on the measured amounts of offset, the optical members in the projection optical system 7B are moved for each exposure module 7, and the (exposure start) position of the projection area on the substrate 10 is adjusted for each exposure module 7.

As still another correction method, the following measurement method is also possible: based on the measured offset amounts, the spatial light modulator 75 is moved for each exposure module 7, and the position of the projection area on the substrate 10 is adjusted for each exposure module 7. As described above, the correction method can apply mechanical, optical, and further data correction including the spatial light modulator 75, but in general, since it is difficult to convert huge data at high speed in a short time before the exposure starts after the offset is measured, mechanical and optical correction is mainly performed.

Further, by using at least one of the above-described correction methods, the exposure start can be adjusted for each exposure module 7, and the second exposure pattern 90 can be superimposed and exposed to the exposed position of the joint portion 85C.

The embodiments of the present invention have been described above, and the correspondence between the present invention and the above-described embodiments is described in addition.

(1) In the above-described embodiment, the exposure apparatus 1 is an exposure apparatus 1 for moving a substrate 10 having a first exposure pattern 85 formed by splicing a first exposure portion 85A and a second exposure portion 85B along a scanning direction and exposing a second exposure pattern 90 to the first exposure pattern 85 in a superimposed manner, the exposure apparatus 1 includes a plurality of exposure modules 7 for dividing and exposing the second exposure pattern 90, the plurality of exposure modules 7 including: a spatial light modulator 75 having a plurality of components and controlling the plurality of components according to the second exposure pattern 90; an illumination optical system 7A for illuminating the spatial light modulator 75; and a projection optical system 7B for projecting an image of the spatial light modulator 75 controlled by the second exposure pattern 90 onto the substrate 10, wherein at least one of the plurality of exposure modules 7 exposes a splice portion 85C formed by splicing the first exposure portion 85A and the second exposure portion 85B.

In the maskless exposure device 1 having such a configuration, when the substrate 10 on which the first exposure pattern 85 is exposed is moved in the scanning direction (X direction) and the second exposure pattern 90 is superimposed and exposed, a part of the second exposure pattern 90 projected from at least one of the plurality of exposure modules 7 including the spatial light modulator 75 can be precisely and finely exposed to the joint portion 85C formed by joining the first exposure portion 85A and the second exposure portion 85B in the first exposure pattern 85. Accordingly, the positional deviation due to the splice unevenness (splice error) generated in the first exposure pattern 85 can be corrected, and exposure with reduced overlay error can be performed for each partial portion of the entire second exposure pattern 90.

(2) In the above embodiment, the exposure width 101 of the exposure module 7 for exposing the splice portion 85C is smaller than the exposure width 102 of the splice portion 85C.

With this configuration, the overlapping exposure of the second exposure pattern 90 is facilitated, in which the local positional shift such as the center positional shift or the shape change of the pattern on the substrate 10 due to the uneven splice in the spliced portion 85C is corrected. Even in the non-spliced portion other than the spliced portion 85C on the substrate 10, the overlapping exposure can be performed in detail in response to the local positional deviation in the first exposure pattern 85.

(3) In the above embodiment, the exposure module 7 for exposing the splice portion 85C sets the size of the spatial light modulator 75 and the projection magnification of the projection optical system 7B so that the exposure width 101 is smaller than the exposure width 102 of the splice portion 85C.

According to this configuration, by setting the size of the spatial light modulator 75 and the projection magnification of the projection optical system 7B, the exposure width 101 of the exposure module 7 that exposes the splice portion 85C can be easily made smaller than the exposure width 102 of the splice portion 85C.

(4) In the above embodiment, the plurality of exposure modules 7 are arranged at the second intervals P2 smaller than the first intervals P1 at which the plurality of splice portions 85C are formed on the first exposure pattern 85 in the non-scanning direction orthogonal to the scanning direction.

According to this configuration, since the second interval P2 of the projection area of the spatial light modulator 75 is smaller in the exposure module 7 adjacent to the first interval P1 of the splice portion 85C in the Y direction, the inside of the splice portion 85C can be exposed by 1 or more projections of the spatial light modulator 75.

(5) In the above embodiment, the method further comprises: a measuring system 5 for measuring the position of the joint 85C before exposing the substrate 10 by the plurality of exposure modules 7; and a control unit (control system 9) for controlling the exposure position of the second exposure pattern 90 by the plurality of exposure modules 7 based on the measurement result of the measurement system 5.

According to this configuration, the exposure start can be adjusted for each exposure module 7, and the second exposure pattern 90 can be superimposed and exposed at the exposed position of the joint portion 85C.

(6) In the above embodiment, the system includes a data generation unit (control system 9) that generates control data for controlling the plurality of components based on the second exposure pattern 90, and the control unit controls at least one of the projection optical system 7B, the spatial light modulator 75, and the data generation unit based on the measurement result of the measurement system 5, and controls the exposure position of the second exposure pattern 90 using the plurality of exposure modules 7.

According to this configuration, at least one of the projection optical system 7B, the spatial light modulator 75, and the data generation unit is controlled based on the measurement result of the measurement system 5, and the exposure position is controlled for each exposure module 7, so that the pattern portions of the second exposure pattern 90 divided into a plurality of pieces are respectively exposed on the substrate 10, whereby the overlay error due to the positional shift in the first exposure pattern 85 on the substrate 10 caused by the uneven stitching can be reduced.

(7) In the above embodiment, the control unit corrects the control data of the data generation unit based on the measurement result of the measurement system 5.

According to this configuration, by correcting the control data (digital exposure data) of the spatial light modulator 75, the exposure position of the exposure module 7 can be controlled.

(8) In the above embodiment, the control unit corrects at least one of the projection position, rotation, and projection magnification of the second exposure pattern 90 by the projection optical system 7B based on the measurement result of the measurement system 5.

According to this configuration, by driving the optical member of the projection optical system 7B, at least one of the projection position, rotation, and projection magnification of the second exposure pattern 90 can be corrected, and the exposure position of the exposure module 7 can be controlled.

(9) In the above embodiment, the measurement system 5 includes: the first alignment measurement system 5A and the second alignment measurement system 5B measure the alignment marks 12 and 120 formed on the substrate 10 together with the first exposure pattern 85.

According to this configuration, the exposure position of the exposure module 7 can be corrected based on the measurement result of the alignment marks 12, 120.

(10) In the above-described embodiment, the exposure apparatus 1 moves the substrate 10 exposed with the first exposure pattern 85 in the scanning direction and superimposes and exposes the second exposure pattern 90 on the first exposure pattern 85, and the exposure apparatus 1 includes: a plurality of exposure modules 7 dividing and exposing the second exposure pattern 90; a detection unit that detects a predetermined region in the first exposure pattern 85, the predetermined region having an exposure state different from that of the other region; and an adjusting unit that adjusts the exposure modules 7 based on the detection result of the detecting unit, the plurality of exposure modules 7 including: a spatial light modulator 75 having a plurality of components and controlling the plurality of components according to the second exposure pattern 90; an illumination optical system 7A for illuminating the spatial light modulator 75; and a projection optical system 7B for projecting the image of the spatial light modulator 75 controlled by the second exposure pattern 90 onto the substrate 10, and exposing the predetermined area with at least one of the plurality of exposure modules 7 adjusted by the adjusting unit.

Here, in the present embodiment, the predetermined region is particularly the joint portion 85C in the first exposure pattern 85, but includes a region where the pattern of the first layer (underlayer) on the substrate 10 is significantly shifted or a region where the exposure state (imaging state) is different from other regions, in addition to the joint portion 85C. The detection unit for detecting a predetermined region having a different exposure state from the other regions in the first exposure pattern 85 includes the above-described measurement system 5 and the control system 9 for detecting the predetermined region based on the measurement result of the measurement system 5. The adjustment unit includes the control system 9, and can apply mechanical, optical, and further data correction under the control of the control system 9.

In the exposure apparatus 1 having such a configuration, when the substrate 10 having the first exposure pattern 85 exposed thereon is moved in the scanning direction and the second exposure pattern 90 is superimposed and exposed, a part of the second exposure pattern 90 can be positioned and exposed with high accuracy by at least one of the plurality of exposure modules 7 having the spatial light modulator 75 so as to be superimposed on the pattern in a region different from other regions in the exposure state on the substrate 10.

In the above embodiment, the exposure of 1st is performed by the exposure apparatus 8 using a mask, and the exposure of 2nd is performed by the exposure apparatus 1 without a mask, but the exposure of 1st may be performed by the exposure apparatus 1 without a mask, and the exposure of 2nd may be performed by the exposure apparatus 8 using a mask. In this case, the following configuration may be adopted.

(11) An exposure apparatus 1 for moving a substrate 10 in a scanning direction and exposing a first exposure pattern, comprising: the exposure module 7 includes: a spatial light modulator 75 having a plurality of components and controlling the plurality of components according to a first exposure pattern 85; an illumination optical system 7A for illuminating the spatial light modulator 75; and a projection optical system 7B for projecting an image of the spatial light modulator 75 controlled by the first exposure pattern 85 onto the substrate 10; a receiving unit that receives information on another exposure device 8 that exposes the substrate 10 with the first exposure pattern and that exposes the second exposure pattern to the first exposure pattern, before exposing the first exposure pattern to the substrate 10; and an adjusting unit for adjusting the exposure module 7 based on the information received by the receiving unit.

The first exposure pattern is formed by 1st exposure of the maskless exposure device 1. The second exposure pattern is formed by 2nd exposure by the exposure device 8. The receiving unit includes a control system 9 (at least a receiver) of the maskless exposure device 1 that can communicate with the exposure device 8. The adjustment unit includes the control system 9, and can apply mechanical, optical, and further data correction under the control of the control system 9.

According to this configuration, 1st exposure is performed by the maskless exposure device 1, and 2nd exposure is performed by the exposure device 8. When it is known that exposure unevenness (splice error) occurs due to exposure (2 nd exposure) by the exposure device 8, exposure is intentionally performed at the stage of 1st exposure by the maskless exposure device 1. However, in a state where the exposure unevenness due to the 2nd exposure of the exposure device 8 is predicted, the position of the projected image of the exposure pattern of the 1st exposure is corrected. For example, in the case of 2nd exposure by the exposure device 8, since the projection area 85A is shifted from the predetermined position by Δyd in the Y direction and the pattern center position in the joint portion 85C is shifted in the Y direction as shown in fig. 10 (a), the pattern center position in the area overlapping the joint portion 85C may be shifted in the Y direction when 1st exposure is performed by the exposure device 1 without a mask. That is, by 2nd exposure by the exposure device 8, the overlay error or the position error generated in the form of the exposure unevenness is generally canceled. Before starting 1st exposure, the maskless exposure device 1 receives information of 2nd exposure by the exposure device 8, position information of a splice portion when exposure is further performed by another exposure device 8, and information of expected exposure unevenness (predicted splice error information) in the splice portion. The maskless exposure device 1 includes a receiving unit that receives such a series of information. The maskless exposure device 1 generates, for example, data for controlling the spatial light modulator 75 and/or the control exposure module 7 based on information obtained by the receiving section thereof, thereby intentionally generating exposure unevenness (positional displacement of an exposure image in response to a stitching error).

(12) In the above embodiment, the receiving unit receives information on the position on the substrate 10 where a part of the first exposure portion and a part of the second exposure portion are spliced and exposed by the exposure device, and the adjusting unit adjusts the exposure module 7 based on the information.

In the maskless exposure device 1 having such a configuration, in a state where exposure unevenness caused by a splice error or the like of the first exposure portion and the second exposure portion, which is likely to occur when the exposure device 8 performing exposure using a photomask, is predicted, the position of the projection image of the first exposure pattern is corrected to perform 1st exposure, whereby it is possible to suppress a decrease in overlay accuracy caused by the exposure unevenness in the 2nd exposure. Here, the exposure unevenness is the same as in the first embodiment described above, but includes, in addition to the splice error (splice unevenness), exposure unevenness in which the exposure amount of a local area on the substrate 10 varies, focus unevenness in which the focus part of the projected image on the surface of the substrate 10 varies, and the like. The exposure amount unevenness or focus unevenness causes the line width of the pattern formed on the substrate 10 to be different from the design value (target value).

(13) The method for manufacturing a module according to the above embodiment includes: exposing the substrate 10 using the exposure apparatus 1; and developing the exposed substrate 10.

According to this configuration, by developing the substrate 10 exposed by the exposure apparatus 1, a component with reduced splice unevenness (overlay error) at the splice portion 85C can be manufactured.

(14) The method for manufacturing a flat panel display according to the above embodiment includes: exposing the substrate 10 for a flat panel display using the exposure apparatus 1; and developing the exposed substrate 10.

According to this configuration, by developing the substrate 10 exposed by the maskless exposure device 1, it is possible to manufacture a flat panel display in which the overlay error of the pattern is reduced similarly in the whole of the display pixel portion and the peripheral circuit portion, regardless of the presence or absence of the splice unevenness. The electronic component formed on the substrate 10 is not limited to a display panel such as a flat panel display, and may be a large-sized multilayer wiring substrate on which fine wiring patterns such as copper and aluminum are formed, a color filter for a liquid crystal panel, or a substrate on which a large number of sensor chips (functional components) are formed in a concentrated manner.

Although one embodiment of the present invention has been described in detail with reference to the drawings, the specific configuration is not limited to the above, and various design changes and the like may be made without departing from the gist of the present invention.

For example, the alignment system has been described as an off-axis alignment in which the optical axis of the projection optical system 7B is offset from the alignment axis, which is an example of a position provided apart from the projection optical system 7B in the X direction. The present invention is not limited to this, and it is also possible to provide an alignment in which the optical axis of the projection optical system 7B is aligned coaxially with the alignment axis, and an alignment of the TTL (through the lens) configuration measured through the projection optical system 7B.

Also, for example, the spatial light modulator 75 includes a liquid crystal device, a digital mirror device (digital micromirror device, DMD), a magneto-optical light modulator (MagnetoOpticSpatialLightModulator, MOSLM), and the like. The spatial light modulator 75 may be a reflective type that reflects the illumination light from the illumination optical system 7A, a transmissive type that transmits the illumination light, or a diffractive type that diffracts the illumination light. The spatial light modulator 75 is capable of modulating illumination light spatially and temporally.

In the above embodiment, for example, the method is to perform 1st exposure by the exposure device 8 and 2nd exposure by the exposure device 1, but not limited thereto. For example, the following methods are also possible: 1st exposure and 2nd exposure are performed by the exposure device 8, and 3rd exposure is performed by the maskless exposure machine (exposure device 1).

Further, the exposure is not limited to the exposure by the exposure device 8 as in the first embodiment, and the exposure by 1st may be performed by the exposure device 1. As described above, the exposure of 1st may be performed by the maskless exposure device 1, and the exposure of 2nd may be performed by the exposure device 8.

[ modification 1 ]

Fig. 14 is a front view showing an example of the exposure apparatus 8 for performing exposure using the mask according to modification 1. As shown in fig. 14, the exposure apparatus 8 may be a mirror projection type scanning exposure apparatus having an arc-shaped projection region SF extending in the Y direction. In this case, the substrate 10 is moved so that the left half portion of the exposure region R1 on the substrate 10 is scanned and exposed in the projection region SF along the scanning track SL 1. Thereafter, the substrate 10 is moved stepwise in the Y direction, and then the substrate 10 is moved again so that the right half portion of the exposure region R1 is scanned and exposed in the projection region SF along the scanning track SL 2.

In this configuration, a splice 85C may be formed in the central portion of the exposure region 8. Therefore, the end portion of the arc-shaped projection region SF overlapping the joint 85C is set so that the illuminance distribution in the Y direction of the illumination light directed to the mask is smoothly inclined. When such an exposure apparatus 8 is used, there is a possibility that exposure unevenness (splice error or the like) may occur. Therefore, by combining the mask-free exposure apparatus 1 of fig. 1 having a plurality of projection areas having widths in the Y direction sufficiently smaller than the projection area SF, different layers are subjected to overlapping exposure, and a display panel or the like can be manufactured with good yield.

[ modification 2 ]

Fig. 15 is an explanatory diagram showing a positional relationship of alignment marks in the exposure apparatus 8 for performing exposure using the photomask according to modification 2. As also illustrated in fig. 12, a plurality of alignment systems are provided in the exposure apparatus 8. For example, as shown in fig. 15, a plurality of alignment systems AL1, AL2, … AL5 are arranged along the Y direction orthogonal to the direction (X direction) of the scanning movement of the substrate 10. A rectangular exposure region R1 such as a display is arranged on the substrate 10, and a plurality of alignment marks M1, M2, … M8 are arranged around the exposure region. 8 marks M1 to M8 are arranged at predetermined intervals along the Y direction, for example, in the vicinity of the +X direction end and the vicinity of the-X direction end of the exposure region R1, respectively.

Of the 8 marks disposed on the +x side and the-X side of the exposure region R1, the marks M2, M3, and M7 are disposed in the splice portion 85C set in the exposure device 8 shown in fig. 7.

Therefore, when the exposure region R1 (base pattern) and the marks M1 to M8 are formed on the substrate 10 and the exposure device 8 performs the superimposed exposure on the exposure region R1, the substrate 10 is moved in the XY direction by the stage 80 shown in fig. 7, and the positions of the marks M1 to M8 are measured by the alignment systems AL1, AL2, … AL5 to perform the alignment.

If the exposure region R1 and the plurality of marks M1 to M8 in fig. 15 are simultaneously exposed on the substrate 10 by the exposure apparatus 8 in fig. 7, the relative positional relationship of the marks M1 to M8 on the substrate 10 includes a positional shift error due to a splice error (Δxd, Δyd in fig. 10). Therefore, in the case of performing the superimposed exposure of the substrate 10 with the marks M1 to M8 as shown in fig. 15 by the maskless exposure device 1 of fig. 1 to 6, the degree of the splice error can be measured by detecting the positional relationship of each of the marks M1 to M8 by the second alignment measuring system 5B shown in fig. 2 of the maskless exposure device 1.

Further, marks M2', M3', … M7' may be formed in the exposure region R1 at the same positions in the Y direction as the marks M2 to M7 provided at the positions of the splice portions 85C, respectively. When the marks M2 'to M7' exist in the exposure region R1, the second alignment meter 5B of the maskless exposure device 1 can be used to precisely measure, for example, the positional deviation error, particularly the nonlinear deformation error, of the pattern arrangement in the square region Ab surrounded by the marks M2, M4, M2', M4' in fig. 15.

[ modification 3 ]

In the exposure apparatus 8 for performing exposure using a photomask shown in fig. 7, a plurality of projection areas of a trapezoid by the projection optical system 84 are subjected to a splice exposure in the Y direction orthogonal to the scanning direction (X direction), or a method of using a splice exposure in the scanning direction, for example. In this case, for example, after the first mask pattern is transferred in about half of the X-direction area on the substrate 10 by the first scanning exposure, the second mask pattern is transferred in the remaining about half of the area by the second scanning exposure. At this time, the first mask pattern transferred onto the substrate 10 and the second mask pattern are spliced along the X direction.

In this case, since a stitching error occurs between the patterns relayed in the X direction on the substrate 10, the overlapping of the positional deviations due to the stitching error can be accurately and precisely corrected when the overlapping exposure is performed by the maskless exposure apparatus 1 in the same manner as in the above embodiments or modifications.

The following remarks are further made with respect to the embodiments described above.

[ appendix 1]

A method of manufacturing a component, comprising: exposing a first pattern on a substrate via a first projection optical system; and exposing a second pattern on the substrate exposed with the first pattern (on the substrate on which the circuit pattern is formed based on the first pattern) via a second projection optical system, and making a size of a first projection area of the first projection optical system on the substrate different from a size of a second projection area of the second projection optical system on the substrate.

[ appendix 2]

The method for manufacturing a device according to appendix 1, wherein one of the first pattern and the second pattern is exposed by light through a mask, and the other of the first pattern and the second pattern is exposed by light through a spatial light modulator.

[ appendix 3]

The method for manufacturing a module as described in appendix 2, comprising: disposing the substrate and the mask in optically conjugate relation to each other via one of the first projection optical system and the second projection optical system; and disposing the substrate and the spatial light modulator in an optically conjugate relationship via the other of the first projection optical system and the second projection optical system.

[ appendix 4]

A method of manufacturing a component, comprising: exposing a first pattern on a substrate via a first projection optical system; and exposing a second pattern on the substrate exposed with the first pattern (on the substrate on which the circuit pattern is formed based on the first pattern) via a second projection optical system, wherein one of the first pattern and the second pattern is exposed by light via a mask, and the other of the first pattern and the second pattern is exposed by light via a spatial light modulator.

Description of the reference numerals

1 Exposure apparatus

5 measuring System

5A first alignment measurement System

5B second alignment measurement System

6 light source unit

7 Exposure module

7A Lighting optical System

7B projection optical system

7C modulation unit

8 mask exposure device

9 control system

10 substrate

12 alignment mark

75 spatial light modulator

80 substrate stage

81 light source unit

82 illumination optical system

83 mask stage

84 projection optical system

85 first exposure pattern

85A first exposed portion

85B second exposed portion

85C splice portion

90 second exposure pattern

100 exposure width

101 exposure width

102 exposure width

120 alignment mark

P1:first interval

P2:second interval

R1:exposure area

R2:exposure area

Beta projection magnification

θ, angle.

Claims

1. An exposure apparatus for exposing a substrate having a first exposure pattern formed by splicing a part of a first exposure portion and a part of a second exposure portion by overlapping the second exposure pattern with the first exposure pattern while moving the substrate in a scanning direction,

comprising a plurality of exposure modules for dividing and exposing the second exposure pattern,

the plurality of exposure modules includes: a spatial light modulator having a plurality of components and controlling the plurality of components according to the second exposure pattern; an illumination optical system for illuminating the spatial light modulator; and a projection optical system for projecting an image of the spatial light modulator controlled according to the second exposure pattern onto the substrate,

At least one of the plurality of exposure modules exposes a splice portion formed by splicing a part of the first exposure portion and a part of the second exposure portion.

2. The exposure apparatus according to claim 1, wherein an exposure width of the exposure module that exposes the splice is smaller than an exposure width of the splice.

3. The exposure apparatus according to claim 2, wherein the exposure module that exposes the splice portion sets the size of the spatial light modulator and the projection magnification of the projection optical system so that an exposure width is smaller than an exposure width of the splice portion.

4. The exposure apparatus according to any one of claims 1 to 3, wherein the plurality of exposure modules are arranged in a plurality at second intervals smaller than first intervals at which the plurality of splice portions are formed on the first exposure pattern in a non-scanning direction orthogonal to the scanning direction.

5. The exposure apparatus according to any one of claims 1 to 4, comprising:

a measuring system for measuring the position of the splice before exposing the substrate by the plurality of exposing modules; and

And a control unit configured to control an exposure position of the second exposure pattern by the plurality of exposure modules based on a measurement result of the measurement system.

6. The exposure apparatus according to claim 5, comprising:

a data generating unit configured to generate control data for controlling the plurality of components based on the second exposure pattern,

the control unit controls at least one of the projection optical system, the spatial light modulator, and the data generation unit based on a measurement result of the measurement system, and controls an exposure position of the second exposure pattern using the plurality of exposure modules.

7. The exposure apparatus according to claim 6, wherein the control unit corrects the control data of the data generating unit based on the measurement result of the measurement system.

8. The exposure apparatus according to claim 6 or 7, wherein the control unit corrects at least one of a projection position, a rotation, and a projection magnification of the second exposure pattern by the projection optical system based on a measurement result of the measurement system.

9. The exposure apparatus according to any one of claims 5 to 8, wherein the measurement system includes an alignment measurement system that measures an alignment mark formed on the substrate together with the first exposure pattern.

10. An exposure apparatus for exposing a substrate exposed with a first exposure pattern while moving the substrate in a scanning direction and overlapping a second exposure pattern with the first exposure pattern, comprising:

A plurality of exposure modules for dividing and exposing the second exposure pattern;

a detection unit configured to detect a predetermined region having an exposure state different from that of the other region in the first exposure pattern; and

An adjusting unit configured to adjust the exposure module based on a detection result of the detecting unit,

at least one of the plurality of exposure modules adjusted by the adjusting unit exposes the predetermined region.

11. An exposure apparatus for exposing a first exposure pattern while moving a substrate in a scanning direction, comprising:

an exposure module having: a spatial light modulator having a plurality of components and controlling the plurality of components according to the first exposure pattern; an illumination optical system for illuminating the spatial light modulator;

and a projection optical system for projecting an image of the spatial light modulator controlled according to the first exposure pattern onto the substrate;

A receiving unit configured to receive information related to another exposure apparatus that exposes the substrate with the first exposure pattern and that exposes the second exposure pattern to the first exposure pattern, before exposing the first exposure pattern to the substrate; and

And an adjusting unit configured to adjust the exposure module based on the information received by the receiving unit.

12. The exposure apparatus according to claim 11, wherein the receiving portion receives the information on a position on the substrate at which a part of the first exposure portion and a part of the second exposure portion are spliced and exposed by the exposure apparatus,

the adjustment unit adjusts the exposure module based on the information.

13. A method of manufacturing a component, comprising:

a step of exposing the above-mentioned substrate using the exposure apparatus according to any one of claims 1 to 12; and developing the exposed substrate.

14. A method of manufacturing a flat panel display, comprising:

a step of exposing a substrate for a flat panel display using the exposure apparatus according to any one of claims 1 to 12; and developing the exposed substrate.

15. A device manufacturing method for exposing a pattern of different layers of an electronic device on a substrate by overlapping the pattern on the substrate using a first exposure device for exposing the substrate by projecting a fixed pattern on a photomask and a second exposure device for exposing the substrate by projecting a variable pattern formed by a space light modulator, the method comprising:

a first step of, when a size of a first projection area of the first exposure apparatus is smaller than a size of the electronic component to be formed on the substrate, performing a splice exposure of a projection image of the fixed pattern which appears in the first projection area due to movement of the substrate, thereby forming a first layer of the electronic component; and

A second step of forming a second layer of the electronic component by performing a joint exposure of the projection images of the variable pattern projected onto the substrate from each of the plurality of exposure modules, the second exposure device having a plurality of exposure modules for projecting the variable pattern into a second projection area smaller than the size of the first projection area,

in the case of performing the second step after the first step, in the second step, the position of the projected image of the variable pattern from each of the plurality of exposure modules is corrected based on the stitching error generated in the first step,

In the case of performing the first step after the second step, the position of the projected image of the variable pattern from each of the plurality of exposure modules is corrected in the second step based on the predicted stitching error that may occur in the first step.

16. An exposure method, which forms a first layer using a first exposure device,

a second layer is formed to overlap the first layer by using a second exposure apparatus having a projection area different in size from the projection area of the first exposure apparatus.

17. A method of manufacturing a component, comprising:

exposing a first pattern on a substrate through a first projection optical system; and

Exposing a second pattern on the substrate exposed with the first pattern via a second projection optical system,

the size of the first projection area on the substrate formed by the first projection optical system is made different from the size of the second projection area on the substrate formed by the second projection optical system.

18. The device manufacturing method according to claim 17, wherein one of the first pattern and the second pattern is exposed by light through a mask,

The other of the first pattern and the second pattern is exposed by light passing through a spatial light modulator.

19. The component manufacturing method according to claim 18, comprising:

disposing the substrate and the mask in an optically conjugate relationship with each other via one of the first projection optical system and the second projection optical system; and

And disposing the substrate and the spatial light modulator in an optically conjugate relationship via the other of the first projection optical system and the second projection optical system.

20. A method of manufacturing a component, comprising:

one of the first pattern and the second pattern is exposed by light through a mask,